JP2013098566A5 - - Google Patents
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- JP2013098566A5 JP2013098566A5 JP2012239690A JP2012239690A JP2013098566A5 JP 2013098566 A5 JP2013098566 A5 JP 2013098566A5 JP 2012239690 A JP2012239690 A JP 2012239690A JP 2012239690 A JP2012239690 A JP 2012239690A JP 2013098566 A5 JP2013098566 A5 JP 2013098566A5
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- JP
- Japan
- Prior art keywords
- circuit element
- die
- liquid
- substrate
- applying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007788 liquid Substances 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 8
- 239000000463 material Substances 0.000 claims 6
- 239000000853 adhesive Substances 0.000 claims 5
- 230000001070 adhesive Effects 0.000 claims 5
- 229910052731 fluorine Inorganic materials 0.000 claims 3
- 239000011737 fluorine Substances 0.000 claims 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 3
- 229910000679 solder Inorganic materials 0.000 claims 3
- 210000002381 Plasma Anatomy 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
Claims (9)
- 基板及び複数の回路素子を有するエレクトロニクスアセンブリを製造する方法であって、
前記基板に半田マスク材料の層を塗布することと、
フッ素を含むプラズマに前記層を曝露して、前記半田マスクをフッ素処理し、それによって、前記半田マスク材料の疎水性を高めることと、
前記基板に第1の回路素子を配置することと、
前記基板に第2の回路素子を配置することと、
前記第1の回路素子に液体を塗布することと、
を含み、
前記第1の回路素子と前記第2の回路素子との間の間隔を最小にすることができるように、前記フッ素を含むプラズマに前記層を曝露することは、前記第1の回路素子に塗布された前記液体が流れて前記第2の回路素子を汚染するのを防ぐ、基板及び複数の回路素子を有するエレクトロニクスアセンブリを製造する方法。 - 前記液体はアンダーフィル材料であり、前記第1の回路素子はダイであり、前記第1の回路素子に前記液体を塗布することは、
前記ダイのエッジに隣接する接触ゾーンにわたって、前記層上に前記アンダーフィル材料を適用することを含む、請求項1に記載の方法。 - 前記第2の回路素子はダイである、請求項2に記載の方法。
- 前記液体は接着剤であり、前記第1の回路素子はダイであり、前記第1の回路素子に前記液体を塗布することは、
前記基板上のダイアタッチパッド上に前記接着剤を適用することを含む、請求項1に記載の方法。 - 前記第2の回路素子はボンドパッドである、請求項4に記載の方法。
- 前記液体は接着剤であり、前記第1の回路素子はダイであり、前記第1の回路素子に前記液体を塗布することは、
前記基板上のダイアタッチパッド上に前記接着剤を適用することと、
前記ダイを前記ダイアタッチパッド上の前記接着剤と接触させることと、を含む、請求項1に記載の方法。 - 前記液体はアンダーフィル材料であり、前記第1の回路素子はダイであり、前記第1の回路素子に前記液体を塗布することは、
前記ダイのエッジに隣接して前記アンダーフィル材料を適用することを更に含む、請求項1に記載の方法。 - 前記第1の回路素子は第1のダイであり、前記第2の回路素子は第2のダイである、請求項1に記載の方法。
- 前記第1の回路素子は第1のダイであり、前記第2の回路素子は前記基板上のボンドパッドである、請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/285,547 US8597982B2 (en) | 2011-10-31 | 2011-10-31 | Methods of fabricating electronics assemblies |
US13/285,547 | 2011-10-31 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016212411A Division JP6290357B2 (ja) | 2011-10-31 | 2016-10-31 | エレクトロニクスアセンブリを製造する方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013098566A JP2013098566A (ja) | 2013-05-20 |
JP2013098566A5 true JP2013098566A5 (ja) | 2015-09-10 |
Family
ID=48172824
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012239690A Pending JP2013098566A (ja) | 2011-10-31 | 2012-10-31 | エレクトロニクスアセンブリを製造する方法 |
JP2016212411A Expired - Fee Related JP6290357B2 (ja) | 2011-10-31 | 2016-10-31 | エレクトロニクスアセンブリを製造する方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016212411A Expired - Fee Related JP6290357B2 (ja) | 2011-10-31 | 2016-10-31 | エレクトロニクスアセンブリを製造する方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8597982B2 (ja) |
JP (2) | JP2013098566A (ja) |
KR (1) | KR20130047661A (ja) |
CN (1) | CN103117229B (ja) |
TW (1) | TWI532108B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8796075B2 (en) | 2011-01-11 | 2014-08-05 | Nordson Corporation | Methods for vacuum assisted underfilling |
US8994155B2 (en) * | 2012-07-26 | 2015-03-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging devices, methods of manufacture thereof, and packaging methods |
US8816507B2 (en) | 2012-07-26 | 2014-08-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package-on-Package structures having buffer dams and method for forming the same |
US10192810B2 (en) * | 2013-06-28 | 2019-01-29 | Intel Corporation | Underfill material flow control for reduced die-to-die spacing in semiconductor packages |
US10204887B2 (en) * | 2013-12-18 | 2019-02-12 | Lumileds Llc | Reflective solder mask layer for LED phosphor package |
TWI544584B (zh) * | 2014-01-17 | 2016-08-01 | Copper substrate with barrier structure and manufacturing method thereof | |
US9805997B2 (en) * | 2014-01-27 | 2017-10-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging methods for semiconductor devices with encapsulant ring |
US9798088B2 (en) * | 2015-11-05 | 2017-10-24 | Globalfoundries Inc. | Barrier structures for underfill blockout regions |
US9978674B2 (en) * | 2016-04-05 | 2018-05-22 | Samsung Electronics Co., Ltd. | Chip-on-film semiconductor packages and display apparatus including the same |
KR102111722B1 (ko) * | 2017-03-17 | 2020-05-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판의 진공 프로세싱을 위한 장치, 기판의 진공 프로세싱을 위한 시스템, 및 진공 챔버 내에서의 기판 캐리어 및 마스크 캐리어의 이송을 위한 방법 |
US10879195B2 (en) * | 2018-02-15 | 2020-12-29 | Micron Technology, Inc. | Method for substrate moisture NCF voiding elimination |
US20210233867A1 (en) * | 2020-01-24 | 2021-07-29 | Intel Corporation | Keep out zone with hydrophobic surface for integrated circuit (ic) package |
US11476707B2 (en) * | 2020-10-06 | 2022-10-18 | Apple Inc. | Wireless power system housing |
US20230010770A1 (en) * | 2021-07-09 | 2023-01-12 | Cree, Inc. | High Performance Semiconductor Device |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2700316B2 (ja) * | 1987-06-10 | 1998-01-21 | 三菱電機株式会社 | 有機物質表面の改質方法 |
US5910341A (en) * | 1996-10-31 | 1999-06-08 | International Business Machines Corporation | Method of controlling the spread of an adhesive on a circuitized organic substrate |
US6103457A (en) * | 1998-05-28 | 2000-08-15 | Philips Electronics North America Corp. | Method for reducing faceting on a photoresist layer during an etch process |
US6413576B1 (en) | 1998-10-05 | 2002-07-02 | Kulicke & Soffa Investments, Inc. | Semiconductor copper bond pad surface protection |
US6692834B1 (en) | 1999-06-28 | 2004-02-17 | Medtronic, Inc. | Method for coating implantable devices |
US6794225B2 (en) * | 2002-12-20 | 2004-09-21 | Intel Corporation | Surface treatment for microelectronic device substrate |
MY134318A (en) | 2003-04-02 | 2007-12-31 | Freescale Semiconductor Inc | Integrated circuit die having a copper contact and method therefor |
US20050121310A1 (en) * | 2003-12-03 | 2005-06-09 | Intel Corporation | Method and substrate to control flow of underfill |
JP4823656B2 (ja) * | 2005-11-22 | 2011-11-24 | パナソニック株式会社 | パッケージ部品の製造方法 |
US20080142996A1 (en) * | 2006-12-19 | 2008-06-19 | Gopalakrishnan Subramanian | Controlling flow of underfill using polymer coating and resulting devices |
US8262920B2 (en) * | 2007-06-18 | 2012-09-11 | Lam Research Corporation | Minimization of mask undercut on deep silicon etch |
JP2009099597A (ja) * | 2007-10-12 | 2009-05-07 | Nec Electronics Corp | 半導体装置およびその製造方法 |
US8231568B2 (en) | 2007-10-16 | 2012-07-31 | Nordson Corporation | Syringes with a reduced susceptibility to freeze-thaw void formation and methods of manufacturing such syringes |
US8217514B2 (en) * | 2008-04-07 | 2012-07-10 | Stats Chippac Ltd. | Integrated circuit packaging system with warpage control system and method of manufacture thereof |
US8372238B2 (en) | 2008-05-20 | 2013-02-12 | Nordson Corporation | Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes |
KR101481577B1 (ko) * | 2008-09-29 | 2015-01-13 | 삼성전자주식회사 | 잉크 젯 방식의 댐을 구비하는 반도체 패키지 및 그 제조방법 |
US7994629B2 (en) * | 2008-12-05 | 2011-08-09 | Stats Chippac Ltd. | Leadless integrated circuit packaging system and method of manufacture thereof |
US8226795B2 (en) | 2009-02-03 | 2012-07-24 | Nordson Corporation | Magnetic clips and substrate holders for use in a plasma processing system |
US8399305B2 (en) * | 2010-09-20 | 2013-03-19 | Stats Chippac, Ltd. | Semiconductor device and method of forming dam material with openings around semiconductor die for mold underfill using dispenser and vacuum assist |
-
2011
- 2011-10-31 US US13/285,547 patent/US8597982B2/en not_active Expired - Fee Related
-
2012
- 2012-10-25 TW TW101139548A patent/TWI532108B/zh not_active IP Right Cessation
- 2012-10-30 KR KR20120121054A patent/KR20130047661A/ko not_active Application Discontinuation
- 2012-10-31 JP JP2012239690A patent/JP2013098566A/ja active Pending
- 2012-10-31 CN CN201210427823.3A patent/CN103117229B/zh not_active Expired - Fee Related
-
2016
- 2016-10-31 JP JP2016212411A patent/JP6290357B2/ja not_active Expired - Fee Related
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