JP2015513820A5 - - Google Patents
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- Publication number
- JP2015513820A5 JP2015513820A5 JP2014556789A JP2014556789A JP2015513820A5 JP 2015513820 A5 JP2015513820 A5 JP 2015513820A5 JP 2014556789 A JP2014556789 A JP 2014556789A JP 2014556789 A JP2014556789 A JP 2014556789A JP 2015513820 A5 JP2015513820 A5 JP 2015513820A5
- Authority
- JP
- Japan
- Prior art keywords
- inductor
- substrate
- tank
- filter circuit
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 18
- 239000011521 glass Substances 0.000 claims 8
- 239000003990 capacitor Substances 0.000 claims 5
- 230000008878 coupling Effects 0.000 claims 5
- 238000010168 coupling process Methods 0.000 claims 5
- 238000005859 coupling reaction Methods 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 239000000696 magnetic material Substances 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 2
- 208000014903 transposition of the great arteries Diseases 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261597953P | 2012-02-13 | 2012-02-13 | |
| US61/597,953 | 2012-02-13 | ||
| US13/419,876 US20130207745A1 (en) | 2012-02-13 | 2012-03-14 | 3d rf l-c filters using through glass vias |
| US13/419,876 | 2012-03-14 | ||
| PCT/US2013/025620 WO2013122887A1 (en) | 2012-02-13 | 2013-02-11 | 3d rf l-c filters using through glass vias |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015513820A JP2015513820A (ja) | 2015-05-14 |
| JP2015513820A5 true JP2015513820A5 (enExample) | 2016-03-03 |
Family
ID=48945118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014556789A Pending JP2015513820A (ja) | 2012-02-13 | 2013-02-11 | スルーガラスビアを使用する3drfl−cフィルタ |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20130207745A1 (enExample) |
| EP (1) | EP2815504A1 (enExample) |
| JP (1) | JP2015513820A (enExample) |
| KR (1) | KR20140127872A (enExample) |
| CN (1) | CN104115399A (enExample) |
| IN (1) | IN2014MN01576A (enExample) |
| WO (1) | WO2013122887A1 (enExample) |
Families Citing this family (41)
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| US8803648B2 (en) | 2012-05-03 | 2014-08-12 | Qualcomm Mems Technologies, Inc. | Three-dimensional multilayer solenoid transformer |
| US9431473B2 (en) | 2012-11-21 | 2016-08-30 | Qualcomm Incorporated | Hybrid transformer structure on semiconductor devices |
| US9203373B2 (en) * | 2013-01-11 | 2015-12-01 | Qualcomm Incorporated | Diplexer design using through glass via technology |
| US10002700B2 (en) | 2013-02-27 | 2018-06-19 | Qualcomm Incorporated | Vertical-coupling transformer with an air-gap structure |
| US20140247269A1 (en) * | 2013-03-04 | 2014-09-04 | Qualcomm Mems Technologies, Inc. | High density, low loss 3-d through-glass inductor with magnetic core |
| US9634645B2 (en) | 2013-03-14 | 2017-04-25 | Qualcomm Incorporated | Integration of a replica circuit and a transformer above a dielectric substrate |
| US9935166B2 (en) | 2013-03-15 | 2018-04-03 | Qualcomm Incorporated | Capacitor with a dielectric between a via and a plate of the capacitor |
| US9634640B2 (en) | 2013-05-06 | 2017-04-25 | Qualcomm Incorporated | Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) and related components and methods |
| US9425761B2 (en) * | 2013-05-31 | 2016-08-23 | Qualcomm Incorporated | High pass filters and low pass filters using through glass via technology |
| US9264013B2 (en) | 2013-06-04 | 2016-02-16 | Qualcomm Incorporated | Systems for reducing magnetic coupling in integrated circuits (ICS), and related components and methods |
| US9449753B2 (en) | 2013-08-30 | 2016-09-20 | Qualcomm Incorporated | Varying thickness inductor |
| US20150092314A1 (en) * | 2013-09-27 | 2015-04-02 | Qualcomm Incorporated | Connector placement for a substrate integrated with a toroidal inductor |
| US9692386B2 (en) | 2013-12-23 | 2017-06-27 | Qualcomm Incorporated | Three-dimensional wire bond inductor |
| US9906318B2 (en) | 2014-04-18 | 2018-02-27 | Qualcomm Incorporated | Frequency multiplexer |
| EP3920200A1 (en) * | 2014-05-05 | 2021-12-08 | 3D Glass Solutions, Inc. | 2d and 3d inductors antenna and transformers fabricating photoactive substrates |
| US9443921B2 (en) | 2015-02-10 | 2016-09-13 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structure and semiconductor manufacturing process |
| US9634823B1 (en) | 2015-10-13 | 2017-04-25 | Kumu Networks, Inc. | Systems for integrated self-interference cancellation |
| US10069474B2 (en) | 2015-11-17 | 2018-09-04 | Qualcomm Incorporated | Encapsulation of acoustic resonator devices |
| EP3391459B1 (en) | 2015-12-16 | 2022-06-15 | Kumu Networks, Inc. | Time delay filters |
| US12165809B2 (en) | 2016-02-25 | 2024-12-10 | 3D Glass Solutions, Inc. | 3D capacitor and capacitor array fabricating photoactive substrates |
| US9979374B2 (en) | 2016-04-25 | 2018-05-22 | Kumu Networks, Inc. | Integrated delay modules |
| US10454444B2 (en) | 2016-04-25 | 2019-10-22 | Kumu Networks, Inc. | Integrated delay modules |
| US9780048B1 (en) * | 2016-08-03 | 2017-10-03 | Qualcomm Incorporated | Side-assembled passive devices |
| US10163771B2 (en) * | 2016-08-08 | 2018-12-25 | Qualcomm Incorporated | Interposer device including at least one transistor and at least one through-substrate via |
| JP6838328B2 (ja) * | 2016-09-15 | 2021-03-03 | 大日本印刷株式会社 | インダクタおよびインダクタの製造方法 |
| WO2018183384A1 (en) | 2017-03-27 | 2018-10-04 | Kumu Networks, Inc. | Systems and methods for intelligently-tunded digital self-interference cancellation |
| US10582609B2 (en) | 2017-10-30 | 2020-03-03 | Qualcomm Incorporated | Integration of through glass via (TGV) filter and acoustic filter |
| CN215871340U (zh) * | 2017-11-30 | 2022-02-18 | 株式会社村田制作所 | 滤波器电路以及合分波器 |
| US10854946B2 (en) | 2017-12-15 | 2020-12-01 | 3D Glass Solutions, Inc. | Coupled transmission line resonate RF filter |
| CN108198803B (zh) * | 2018-01-15 | 2023-05-09 | 宁波大学 | 一种基于硅通孔技术的三维带通滤波器 |
| JP7106875B2 (ja) | 2018-01-30 | 2022-07-27 | 凸版印刷株式会社 | ガラスコアデバイスの製造方法 |
| JP7096346B2 (ja) | 2018-02-27 | 2022-07-05 | クム ネットワークス,インコーポレイテッド | 設定可能なハイブリッド自己干渉キャンセルシステムおよび方法 |
| JP7509035B2 (ja) * | 2018-05-24 | 2024-07-02 | Toppanホールディングス株式会社 | 回路基板 |
| CN109510605A (zh) * | 2018-10-30 | 2019-03-22 | 吉林大学 | 具有内在宽阻带抑制的带通滤波器 |
| WO2020116228A1 (ja) * | 2018-12-04 | 2020-06-11 | 凸版印刷株式会社 | 回路基板 |
| JP7188101B2 (ja) * | 2019-01-15 | 2022-12-13 | 凸版印刷株式会社 | 高周波モジュール用電子基板 |
| US10868661B2 (en) | 2019-03-14 | 2020-12-15 | Kumu Networks, Inc. | Systems and methods for efficiently-transformed digital self-interference cancellation |
| EP4121988A4 (en) | 2020-04-17 | 2023-08-30 | 3D Glass Solutions, Inc. | BROADBAND INDUCTOR |
| US11605620B2 (en) * | 2020-06-19 | 2023-03-14 | Qualcomm Incorporated | Three-dimensional (3D) integrated circuit with passive elements formed by hybrid bonding |
| US12255004B2 (en) * | 2021-03-12 | 2025-03-18 | Virginia Tech Intellectual Properties, Inc. | Multi-phase integrated coupled inductor structure |
| WO2023089967A1 (ja) * | 2021-11-18 | 2023-05-25 | 株式会社村田製作所 | インダクタ部品 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS539229Y2 (enExample) * | 1972-01-27 | 1978-03-10 | ||
| JP3031957B2 (ja) * | 1990-05-24 | 2000-04-10 | 毅 池田 | ノイズ・フイルタ |
| US5461353A (en) * | 1994-08-30 | 1995-10-24 | Motorola, Inc. | Printed circuit board inductor |
| EP0725407A1 (en) * | 1995-02-03 | 1996-08-07 | International Business Machines Corporation | Three-dimensional integrated circuit inductor |
| US6191666B1 (en) * | 1999-03-25 | 2001-02-20 | Industrial Technology Research Institute | Miniaturized multi-layer ceramic lowpass filter |
| US6493861B1 (en) * | 1999-12-28 | 2002-12-10 | Intel Corporation | Interconnected series of plated through hole vias and method of fabrication therefor |
| TW523920B (en) * | 2000-11-18 | 2003-03-11 | Lenghways Technology Co Ltd | Integrated multi-channel communication passive device manufactured by using micro-electromechanical technique |
| US6664606B2 (en) * | 2002-04-23 | 2003-12-16 | Motorola, Inc. | Multi-layer integrated circuit structure with reduced magnetic coupling |
| JP2005347781A (ja) * | 2002-05-29 | 2005-12-15 | Ajinomoto Co Inc | Lc並列共振回路、lc並列共振回路内蔵多層基板、及びそれらの製造方法 |
| JP2004200227A (ja) * | 2002-12-16 | 2004-07-15 | Alps Electric Co Ltd | プリントインダクタ |
| US7088215B1 (en) * | 2005-02-07 | 2006-08-08 | Northrop Grumman Corporation | Embedded duo-planar printed inductor |
| JP2006229173A (ja) * | 2005-02-21 | 2006-08-31 | Tokyo Electron Ltd | インダクタンス素子 |
| JP4591689B2 (ja) * | 2005-04-28 | 2010-12-01 | Tdk株式会社 | Lc複合部品の製造方法 |
| US7262674B2 (en) * | 2005-06-15 | 2007-08-28 | Intel Corporation | Bandpass filter having first and second serially coupled collection of filter components for providing upper and lower rejection notches |
| JP4893631B2 (ja) * | 2006-08-09 | 2012-03-07 | 株式会社村田製作所 | アンテナ装置 |
| US7869784B2 (en) * | 2007-02-27 | 2011-01-11 | Freescale Semiconductor, Inc. | Radio frequency circuit with integrated on-chip radio frequency inductive signal coupler |
| US9269485B2 (en) * | 2007-11-29 | 2016-02-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of creating spiral inductor having high Q value |
| US8576026B2 (en) * | 2007-12-28 | 2013-11-05 | Stats Chippac, Ltd. | Semiconductor device having balanced band-pass filter implemented with LC resonator |
| WO2009128047A1 (en) * | 2008-04-18 | 2009-10-22 | Nxp B.V. | High density inductor, having a high quality factor |
| US8159314B1 (en) * | 2008-08-04 | 2012-04-17 | Rockwell Collins, Inc. | Actively tuned filter |
| JP2010220139A (ja) * | 2009-03-19 | 2010-09-30 | Fujitsu Ltd | フィルタ、フィルタリング方法、および通信装置 |
| US20110248405A1 (en) * | 2010-04-09 | 2011-10-13 | Qualcomm Incorporated | Selective Patterning for Low Cost through Vias |
| US8384507B2 (en) * | 2010-06-01 | 2013-02-26 | Qualcomm Incorporated | Through via inductor or transformer in a high-resistance substrate with programmability |
-
2012
- 2012-03-14 US US13/419,876 patent/US20130207745A1/en not_active Abandoned
-
2013
- 2013-02-11 WO PCT/US2013/025620 patent/WO2013122887A1/en not_active Ceased
- 2013-02-11 IN IN1576MUN2014 patent/IN2014MN01576A/en unknown
- 2013-02-11 JP JP2014556789A patent/JP2015513820A/ja active Pending
- 2013-02-11 KR KR1020147025426A patent/KR20140127872A/ko not_active Withdrawn
- 2013-02-11 EP EP13709600.4A patent/EP2815504A1/en not_active Withdrawn
- 2013-02-11 CN CN201380008977.1A patent/CN104115399A/zh active Pending
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