Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
  • H03H7/01—Frequency selective two-port networks
  • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
  • H01F17/00—Fixed inductances of the signal type
  • H01F17/0006—Printed inductances
  • H01F17/0013—Printed inductances with stacked layers
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
  • H03H7/01—Frequency selective two-port networks
  • H03H7/09—Filters comprising mutual inductance
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
  • H03H7/01—Frequency selective two-port networks
  • H03H7/17—Structural details of sub-circuits of frequency selective networks
  • H03H7/1708—Comprising bridging elements, i.e. elements in a series path without own reference to ground and spanning branching nodes of another series path
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
  • H03H7/01—Frequency selective two-port networks
  • H03H7/17—Structural details of sub-circuits of frequency selective networks
  • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
  • H03H7/1766—Parallel LC in series path
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
  • H03H7/01—Frequency selective two-port networks
  • H03H7/17—Structural details of sub-circuits of frequency selective networks
  • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
  • H03H7/1775—Parallel LC in shunt or branch path
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
  • H03H7/01—Frequency selective two-port networks
  • H03H7/17—Structural details of sub-circuits of frequency selective networks
  • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
  • H03H7/1783—Combined LC in series path
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
  • H01F17/00—Fixed inductances of the signal type
  • H01F17/0006—Printed inductances
  • H01F17/0033—Printed inductances with the coil helically wound around a magnetic core
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
  • H01F17/00—Fixed inductances of the signal type
  • H01F17/0006—Printed inductances
  • H01F17/0013—Printed inductances with stacked layers
  • H01F2017/0026—Multilayer LC-filter
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
  • H01F17/00—Fixed inductances of the signal type
  • H01F17/0006—Printed inductances
  • H01F2017/004—Printed inductances with the coil helically wound around an axis without a core
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
  • H03H2001/0021—Constructional details
  • H03H2001/0085—Multilayer, e.g. LTCC, HTCC, green sheets
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T29/00—Metal working
  • Y10T29/49—Method of mechanical manufacture
  • Y10T29/49002—Electrical device making
  • Y10T29/49117—Conductor or circuit manufacturing
  • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
  • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.

Definitions

• Disclosed embodiments are related to radio frequency (RF) filters. More particularly, exemplary embodiments are directed to three-dimensional (3D) RF inductor-capacitor (LC) band pass filters comprising through- glass- vias (TGVs).
• RF radio frequency
• exemplary embodiments are directed to three-dimensional (3D) RF inductor-capacitor (LC) band pass filters comprising through- glass- vias (TGVs).
• Inductors are used extensively in analog circuits and signal processing. Inductors in conjunction with capacitors and other components can be used to form tuned circuits or L-C filters that can emphasize or filter out specific signal frequencies.
• Inductance (measured in henries H) is an effect which results from the magnetic field that forms around a current-carrying conductor. Factors such as the number of turns of the inductor, the area of each loop/turn, and the material it is wrapped around affect the inductance.
• the quality factor (or Q) of an inductor is a measure of its efficiency. The higher the Q of the inductor, the closer it approaches the behavior of an ideal, lossless, inductor.
• the Q of the inductor is directly proportional to its inductance L and inversely proportional to its internal electrical resistance R. Accordingly, the Q of the inductor may be increased by increasing L and/or by reducing R.
• planar inductors do not exhibit high Q.
• planar inductors do not lend themselves well for coupling with other inductive elements in tuned circuits, or in other words, they do not exhibit a high coefficient of coupling K.
• three dimensional inductors can be constructed as a coil of conducting material, such as copper wire or other suitable metal, wrapped around a core.
• the core may be air or may include a silicon substrate, glass, or magnetic material. Core materials with a higher permeability than air confine the magnetic field closely to the inductor, thereby increasing the inductance of the inductor.
• three dimensional inductors that are known in the art exhibit better coefficient of coupling K than planar inductors
• current technology has imposed limitations on the Q factor that is achievable for these inductors.
• inductors formed on a glass substrate, or wrapped around a core made of glass can exhibit high permeability, coefficient of coupling, and Q factor.
• known techniques to construct inductors on a glass substrate rely on vias such as through-silicon-vias (TSVs) which take away from the desirable characteristics of glass substrates.
• TSVs through-silicon-vias
• Exemplary embodiments of the invention are directed to systems and method for radio frequency (RF) filters. More particularly, exemplary embodiments are directed to three- dimensional (3D) RF inductor-capacitor (L-C) band pass filters comprising through- glass-vias (TGVs).
• RF radio frequency
• an exemplary embodiment is directed to a method of forming an L-C filter circuit on a glass substrate comprising: forming a first portion of a first inductor on a first surface of the glass substrate; forming a second portion of the first inductor on a second surface of the glass substrate; and connecting the first and second portions of the first inductor via through glass vias (TGVs).
• TSVs glass vias
• Another exemplary embodiment is directed to an L-C filter circuit comprising: a glass substrate; a first portion of a first inductor formed on a first surface of the glass substrate; a second portion of the first inductor formed on a second surface of the glass substrate; and a first set of through-glass-vias (TGVs) configured to connect the first and second portions of the first inductor.
• TSVs through-glass-vias
• Another exemplary embodiment is directed to a method of forming an L-C filter circuit on a glass substrate comprising: step for forming a first portion of a first inductor on a first surface of the glass substrate; step for forming a second portion of the first inductor on a second surface of the glass substrate; and step for connecting the first and second portions of the first inductor via through-glass-vias (TGVs).
• TSVs through-glass-vias
• Yet another exemplary embodiment is directed to an L-C filter circuit comprising: a substrate means formed of glass; a first portion of a first inductance means formed on a first surface of the substrate means; a second portion of the first inductance means formed on a second surface of the substrate means; and a first set of through-glass-vias (TGVs) configured to connect the first and second portions of the first inductance means.
• a substrate means formed of glass
• a first portion of a first inductance means formed on a first surface of the substrate means
• a second portion of the first inductance means formed on a second surface of the substrate means
• TSVs through-glass-vias
• Yet another exemplary embodiment is directed to an L-C filter circuit comprising: a first L-C tank comprising a first inductor and a first capacitor coupled between a high voltage supply and ground; a second L-C tank comprising a second inductor and a second capacitor coupled between the high voltage supply and ground; and an L-C filter means coupling the first L-C tank and the second L-C tank, wherein the first and second inductors are three-dimensional solenoid inductors formed on a first and second surface of a glass substrate using through-glass-vias (TGVs), and wherein the first capacitor is formed as a metal-insulator-metal (MIM) capacitor between the first inductor and the second inductor on the first surface of the glass substrate, and the second capacitor is formed as a MIM capacitor between the second inductor and the L-C filter means on the first surface of the glass substrate.
• TSVs through-glass-vias
• FIG. 1A illustrates an exemplary inductor formed on a glass substrate using TGVs.
• FIG. IB illustrates an exemplary inductor formed on a glass substrate using TGVs and further including a magnetic core.
• FIG. 2 illustrates two exemplary inductors with their magnetic fields aligned.
• FIG. 3A illustrates an exemplary L-C BPF designed with inductors and capacitors using
• FIG. 3B illustrates the corresponding circuit-level schematic representation of the L-C BPF of FIG. 3A
• FIG. 3C illustrates the frequency response characteristic of the L-C BPF of FIGS. 3A-B.
• FIG. 4A illustrates another exemplary L-C BPF designed with inductors and capacitors using TGVs.
• FIG. 4B illustrates the corresponding circuit-level schematic representation of the L-C BPF of FIG. 4A.
• FIG. 4C illustrates the frequency response characteristic of the L-C BPF of FIGS. 4A-B.
• FIG. 5A illustrates yet another exemplary L-C BPF designed with inductors and capacitors using TGVs.
• FIG. 5B illustrates the corresponding circuit-level schematic representation of the L-C BPF of FIG. 5A.
• FIG. 5C illustrates the frequency response characteristic of the L-C BPF of FIGS. 5A-B.
• FIG. 6A illustrates yet another exemplary L-C BPF designed with inductors and capacitors using TGVs.
• FIG. 6B illustrates the frequency response characteristic of the L-C BPF of FIG. 6A.
• FIG. 7A illustrates yet another exemplary L-C BPF designed with inductors and capacitors using TGVs.
• FIG. 7B illustrates the frequency response characteristic of the L-C BPF of FIG. 7A.
• FIG. 8 is a flow-chart representation of a method of forming an inductor on a glass substrate using TGVs according to exemplary embodiments.
• FIG. 9 illustrates an exemplary wireless communication system 900 in which an embodiment of the disclosure may be advantageously employed.
• Exemplary embodiments are directed to tuned circuits such as L-C band pass filters (BPFs) using inductive and capacitive elements which may be formed on glass substrate.
• embodiments may include through-glass-vias (TGVs) to form connections between a first surface and a second surface of the glass substrates in order to form 3D BPFs.
• TGVs through-glass-vias
• embodiments may be configured to confine magnetic fields of the 3D BPFs to the glass substrates, thus enhancing their performance and reducing fluctuations in their corresponding frequency response characteristics.
• Embodiments using aforementioned TGVs may also be directed to particular circuit topologies for 3D L-C BPFs comprising inductor-coupling between L-C tanks in order to remove undesirable spurious fluctuations in the pass band of the frequency response.
• Inductor 100 may be formed on substrate 108 which may be a glass substrate. Glass substrates may facilitate low dielectric loss and substantially eliminate eddy current loss.
• a first portion 102 is illustrated in the shaded portions. First portion 102 may be formed of a conductive material such as a metal and disposed on a first surface such as a top surface of substrate 108. Second portion 106 illustrated by ghost lines may be similarly formed of a conductive material and disposed on a second surface such as a bottom surface of substrate 108.
• First portion 102 and second portion 106 may be connected by TGVs 104 (illustrated by dark shading) which pass through substrate 108. As shown, second portion 106 may be formed at an angle relative to first portion 102 in order to allow for overlapping connection points of TGVs 104.
• TGVs In comparison to vias formed according to previously known technologies, the use of TGVs in exemplary embodiments to connect first portion 102 and second portion 106 through substrate 108 (which may be formed of glass) will lead to lower losses in inductance L of inductor 100. Further, thicker metal lines may be used for forming first portion 102 and second portion 106 over a glass substrate. Moreover, TGVs may be formed of greater thickness than previously known technologies for vias. Accordingly, thicker metal lines and vias will lead to lower resistance R through the turns of inductor 100. As will be seen, a higher inductance L along with a lower resistance R will contribute to a higher Q factor for inductor 100. Further, skilled persons will recognize that the 3D configuration of inductor 100 on glass substrate 108 will also confine the magnetic fields to the glass substrate, and thus further improve quality and reduce losses.
• a core such as a magnetic core may be provided to further improve the inductance of exemplary inductors.
• core 110 is illustrated.
• Core 110 may be made of a magnetic material and provided within substrate 108, thereby increasing permeability of the core.
• Known magnetic materials such as CoFe, CoFeB, NiFe, etc. may be used for forming core 110 within substrate 108. It will be understood that including core 110 is optional, and without a magnetic core, the permeability of substrate 108 formed of glass may be similar to that of an air core.
• FIG. 2 another embodiment is shown, wherein a second 3D solenoid inductor 200 is provided.
• Inductor 200 is positioned in close proximity to inductor 100 described above, in such a manner as to align their respective magnetic fields. Aligning the magnetic fields in this manner may enable a positive mutual inductance coupling between inductor 100 and 200, thereby enhancing the inductance and Q factor of each of the inductor 100 and 200.
• inductor 200 is illustrated as formed on a second substrate 208, different from substrate 108 of inductor 100, in some embodiments, substrate 208 and substrate 108 may be merged to be a single substrate.
• inductor 200 comprises third portion 202 formed on a first surface such as a top surface of substrate 208; fourth portion 206 formed on a second surface such as a bottom surface of substrate 208; and TGVs 204 to connect third portion 202 and fourth portion 206.
• Substrate 208 may also be formed of glass.
• inductor 100 is shown to comprise four turns while inductor 200 is shown to comprise three turns.
• any suitable number of turns may be chosen for either inductor, while keeping in mind that inductance of an inductor is directly proportional to the square of the number of turns of that inductor.
• one or both of inductors 100 and 200 may have a magnetic core such as core 110 of FIG. IB provided to further improve their inductance values.
• the coefficient of coupling K between inductors 100 and 200 may be higher than that which may be achievable with planar inductors.
• FIG. 3A a first 3D L-C BPF topology designated as 300, and formed according to exemplary embodiments is illustrated.
• FIG. 3A illustrates four inductors LI, L2, L3, and L4 formed on substrate 308.
• Inductor LI is illustrated as having a single turn and formed similar to inductor 100, with first portion 302 on a first surface and second portion 306 on a second surface of substrate 308, wherein first portion 302 and second portion 306 may be connected by TGV 304.
• the remaining inductors L2- L4 may be formed similarly and all four inductors L1-L4 may be coupled as shown in order to align their respective magnetic fields and provide a positive mutual inductance coupling.
• FIG. 3A also illustrates four capacitors C1-C4 coupled to inductors L1-L4.
• Each of the four capacitors C1-C4 may be formed as a metal- insulator- metal (MIM) capacitor.
• MIM metal- insulator- metal
• portions 312 may be metal electrodes and the capacitive junction may be formed by insulator 314.
• the capacitors may be coupled to the inductors at junctions formed by the TGVs as shown.
• two ports/terminals 316 and 318 which may be input/output pads for L-C BPF 300, and ground connections "GND.”
• FIG. 3B a corresponding circuit-level schematic representation of L-C BPF 300 is illustrated.
• the various couplings amongst inductors L1-L4 and capacitors C1-C4 is made efficient and lossless by using TGVs.
• the performance of the inductors in terms of Q factor and inductances enhanced by the higher coefficients of coupling is correspondingly improved, thereby improving the frequency characteristics of L-C BPF 300.
• FIG. 3C the frequency response of an L-C BPF formed according to FIGS. 3A-B is illustrated. As shown in FIG.
• the inductor- capacitor (L-C) pair formed by Ll-Cl as well as that formed by L4-C4 is shown to be shunted to the ground, while the L-C pairs (or tanks) L2-C2 and L3-C3 are shown to be in series between the two ports/terminals 316 and 318.
• the L-C tanks Ll-Cl and L4- C4 forming the shunts contribute to the pass band in the frequency response of FIG. 3C, while the series L-C pairs, L2-C2 and L3-C3 contribute to the zeroes.
• Suitable modifications to the L-C connections may provide for a smoother pass band in the frequency response of L-C BPFs in exemplary embodiments.
• L-C BPF 400 is similar to L-C BPF 300 in many aspects, and for ease of understanding, the reference numerals have been substantially retained from FIG. 3A.
• L-C BPF 400 is notably different from L-C BPF 300 in that capacitors C2 and C3 have been eliminated in L-C BPF 400.
• the L-C filter means, inductors L2 and L3 of L-C BPF 300 appear in series and are combined to represent a larger inductor L2-3 in L-C BPF 400.
• FIG. 4B illustrates the corresponding circuit-level schematic representation of L-C BPF 400.
• the L-C tanks Ll-Cl and L4-C4 appear as shunts, which are coupled by the combined inductor L2-3. It is observed that the circuit topology of L-C BPF 400 yields an improved frequency response characteristic in the pass band, which is free from spurious fluctuations.
• the frequency response of L-C BPF 400 is illustrated. It can be seen from FIG. 4C that in comparison with FIG. 3C, the poles are removed and a wider and smoother pass band is observed.
• the inductor-coupled 3D topology of L-C BPF 400 formed using TGVs and comprising inductor L2-3 coupling L-C tanks Ll-Cl and L4-C4 may provide a wide frequency range in the pass band. In one example, frequency ranges of up to 10 GHz with a minimum -39dB rejection and free from spurious fluctuations, may be realized by higher coupling inductors in L-C BPF 400.
• improved frequency response characteristics may be realized in conventional L-C BPF topologies by configuring these conventional L-C BPFs using exemplary 3D inductors and capacitors on glass substrates using TGVs.
• FIGS. 5A-C yet another 3D L-C BPF topology generally designated as 500 is illustrated.
• FIG. 5A illustrates an L-C circuit topology which may be conventional, although configured using 3D inductors and capacitors on glass substrates using TGVs according to exemplary embodiments.
• the corresponding circuit-level schematic representation is presented in FIG. 5B. Compared to FIG. 4B, it can be seen that the L-C filter means, capacitor C5 in FIG. 5B replaces inductor L2-3 of FIG. 4B.
• L-C BPF 500 With reference to the frequency response of L-C BPF 500, which is illustrated in FIG. 5C, it is observed that the capacitor-coupled configuration of L-C BPF 500 with capacitor C5 connecting the L-C tanks LI -CI and L4-C4 yields a smoother and wider pass band when the component inductors and capacitors are configured according to exemplary embodiments on glass substrates using TGVs than the frequency response characteristics that is achievable with conventional implementations of these L-C components.
• L-C BPF 600 yet another L-C BPF configuration, wherein the circuit topology may be conventional, but the L-C components therein may be formed according to exemplary embodiments, is illustrated.
• the L-C filter means comprising yet another L-C tank coupled by series capacitors may be added between L-C tanks Ll-Cl and L4- C4 of L-C BPF 500 of FIG. 5A.
• L-C BPF 600 further includes L-C tank C6-L6 coupled to L-C tanks Ll-Cl and C4-L4 through capacitors C7 and C8.
• the enhanced coupling derived from the additional components, capacitors C6, C7, C8 and inductor L6 provides the frequency response illustrated in FIG. 6B, when compared to the frequency response illustrated in FIG. 5B.
• FIG. 7A Yet another L-C BPF configuration, wherein the circuit topology may be conventional, but the L-C components therein may be formed according to exemplary embodiments, is illustrated in FIG. 7A.
• L-C BPF 700 of FIG. 7A may be reached by eliminating capacitor C5 from L-C BPF 500 and adding the L-C filter means, capacitors C9, CIO, and Cl l, as shown.
• the altered coupling between L-C capacitor tanks LI -CI and L4-C4 may result in changes to the frequency response characteristics, as are depicted by FIG. 7B.
• L-C BPF circuits may be improved by configuring the L-C BPFs with component L-C filter means such as inductors and capacitors on glass substrates using TGVs according to exemplary embodiments.
• an embodiment can include a method of forming an L-C filter circuit on a glass substrate (e.g. 108 of FIG. 1) comprising: forming a first portion (e.g. 102 of FIG. 1) of a first inductor (e.g. 100 of FIG. 1) on a first surface of the glass substrate - Block 802; forming a second portion (106) of the first inductor on a second surface of the glass substrate - Block 804; and connecting the first and second portions of the first inductor via through-glass-vias (TGVs) (e.g. 104 of Fig. 1) - Block 806.
• TSVs through-glass-vias
• a software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.
• An exemplary storage medium is coupled to the processor such that the processor can read information from, and write information to, the storage medium. In the alternative, the storage medium may be integral to the processor.
• an embodiment of the invention can include a computer readable media embodying a method for L-C circuits on a glass substrate using TGVs. Accordingly, the invention is not limited to illustrated examples and any means for performing the functionality described herein are included in embodiments of the invention. Additional aspects are disclosed in the attached Appendix A, which forms part of this disclosure and is expressly incorporated herein in its entirety.
• FIG. 9 illustrates an exemplary wireless communication system 900 in which an embodiment of the disclosure may be advantageously employed.
• FIG. 9 shows three remote units 920, 930, and 950 and two base stations 940.
• remote unit 920 is shown as a mobile telephone
• remote unit 930 is shown as a portable computer
• remote unit 950 is shown as a fixed location remote unit in a wireless local loop system.
• the remote units may be mobile phones, hand-held personal communication systems (PCS) units, portable data units such as personal data assistants, GPS enabled devices, navigation devices, set top boxes, music players, video players, entertainment units, fixed location data units such as meter reading equipment, or any other device that stores or retrieves data or computer instructions, or any combination thereof.
• FIG. 9 illustrates remote units according to the teachings of the disclosure, the disclosure is not limited to these exemplary illustrated units. Embodiments of the disclosure may be suitably employed in any device which includes active integrated circuitry including memory and on-chip circuitry for test and characterization
• the foregoing disclosed devices and methods are typically designed and are configured into GDSII and GERBER computer files, stored on a computer readable media. These files are in turn provided to fabrication handlers who fabricate devices based on these files. The resulting products are semiconductor wafers that are then cut into semiconductor die and packaged into a semiconductor chip. The chips are then employed in devices described above

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• 2012
  • 2012-03-14 US US13/419,876 patent/US20130207745A1/en not_active Abandoned
• 2013
  • 2013-02-11 WO PCT/US2013/025620 patent/WO2013122887A1/en not_active Ceased
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