IN2014MN01576A - - Google Patents

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Publication number
IN2014MN01576A
IN2014MN01576A IN1576MUN2014A IN2014MN01576A IN 2014MN01576 A IN2014MN01576 A IN 2014MN01576A IN 1576MUN2014 A IN1576MUN2014 A IN 1576MUN2014A IN 2014MN01576 A IN2014MN01576 A IN 2014MN01576A
Authority
IN
India
Prior art keywords
inductor
glass substrate
capacitor
tgvs
filter circuit
Prior art date
Application number
Inventor
Changhan Yun
Chengjie Zuo
Chi Shun Lo
Jonghae Kim
Mario F Velez
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of IN2014MN01576A publication Critical patent/IN2014MN01576A/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01Frequency selective two-port networks
    • H03H7/0115Frequency selective two-port networks comprising only inductors and capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • H01F17/0013Printed inductances with stacked layers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01Frequency selective two-port networks
    • H03H7/09Filters comprising mutual inductance
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01Frequency selective two-port networks
    • H03H7/17Structural details of sub-circuits of frequency selective networks
    • H03H7/1708Comprising bridging elements, i.e. elements in a series path without own reference to ground and spanning branching nodes of another series path
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01Frequency selective two-port networks
    • H03H7/17Structural details of sub-circuits of frequency selective networks
    • H03H7/1741Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1766Parallel LC in series path
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01Frequency selective two-port networks
    • H03H7/17Structural details of sub-circuits of frequency selective networks
    • H03H7/1741Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1775Parallel LC in shunt or branch path
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01Frequency selective two-port networks
    • H03H7/17Structural details of sub-circuits of frequency selective networks
    • H03H7/1741Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1783Combined LC in series path
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • H01F17/0033Printed inductances with the coil helically wound around a magnetic core
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • H01F17/0013Printed inductances with stacked layers
    • H01F2017/0026Multilayer LC-filter
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • H01F2017/004Printed inductances with the coil helically wound around an axis without a core
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021Constructional details
    • H03H2001/0085Multilayer, e.g. LTCC, HTCC, green sheets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Filters And Equalizers (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
  • Coils Or Transformers For Communication (AREA)

Abstract

Three dimensional (3D) Radio Frequency (RF) inductor capacitor (LC) band pass filters having through glass vias (TGVs). One such L C filter circuit includes a glass substrate a first portion of a first inductor formed on a first surface of the glass substrate a second portion of the first inductor formed on a second surface of the glass substrate and a first set of TGVs configured to connect the first and second portions of the first inductor. Additionally the L C filter circuit can include a second inductor similar to the first inductor and a metal insulator metal (MIM) capacitor formed between the first and second inductor such that the first and second inductor are coupled through the MIM capacitor.
IN1576MUN2014 2012-02-13 2013-02-11 IN2014MN01576A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261597953P 2012-02-13 2012-02-13
US13/419,876 US20130207745A1 (en) 2012-02-13 2012-03-14 3d rf l-c filters using through glass vias
PCT/US2013/025620 WO2013122887A1 (en) 2012-02-13 2013-02-11 3d rf l-c filters using through glass vias

Publications (1)

Publication Number Publication Date
IN2014MN01576A true IN2014MN01576A (en) 2015-07-03

Family

ID=48945118

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1576MUN2014 IN2014MN01576A (en) 2012-02-13 2013-02-11

Country Status (7)

Country Link
US (1) US20130207745A1 (en)
EP (1) EP2815504A1 (en)
JP (1) JP2015513820A (en)
KR (1) KR20140127872A (en)
CN (1) CN104115399A (en)
IN (1) IN2014MN01576A (en)
WO (1) WO2013122887A1 (en)

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US9203373B2 (en) * 2013-01-11 2015-12-01 Qualcomm Incorporated Diplexer design using through glass via technology
US10002700B2 (en) 2013-02-27 2018-06-19 Qualcomm Incorporated Vertical-coupling transformer with an air-gap structure
US20140247269A1 (en) * 2013-03-04 2014-09-04 Qualcomm Mems Technologies, Inc. High density, low loss 3-d through-glass inductor with magnetic core
US9634645B2 (en) 2013-03-14 2017-04-25 Qualcomm Incorporated Integration of a replica circuit and a transformer above a dielectric substrate
US9935166B2 (en) 2013-03-15 2018-04-03 Qualcomm Incorporated Capacitor with a dielectric between a via and a plate of the capacitor
US9634640B2 (en) 2013-05-06 2017-04-25 Qualcomm Incorporated Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) and related components and methods
US9425761B2 (en) * 2013-05-31 2016-08-23 Qualcomm Incorporated High pass filters and low pass filters using through glass via technology
US9264013B2 (en) 2013-06-04 2016-02-16 Qualcomm Incorporated Systems for reducing magnetic coupling in integrated circuits (ICS), and related components and methods
US9449753B2 (en) 2013-08-30 2016-09-20 Qualcomm Incorporated Varying thickness inductor
US20150092314A1 (en) * 2013-09-27 2015-04-02 Qualcomm Incorporated Connector placement for a substrate integrated with a toroidal inductor
US9692386B2 (en) 2013-12-23 2017-06-27 Qualcomm Incorporated Three-dimensional wire bond inductor
US9906318B2 (en) 2014-04-18 2018-02-27 Qualcomm Incorporated Frequency multiplexer
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US9780048B1 (en) * 2016-08-03 2017-10-03 Qualcomm Incorporated Side-assembled passive devices
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CN108198803B (en) * 2018-01-15 2023-05-09 宁波大学 A 3D Bandpass Filter Based on Through-Silicon Via Technology
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CN111771345B (en) 2018-02-27 2021-08-31 库姆网络公司 System and method for configurable hybrid self-interference cancellation
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Also Published As

Publication number Publication date
WO2013122887A1 (en) 2013-08-22
JP2015513820A (en) 2015-05-14
KR20140127872A (en) 2014-11-04
CN104115399A (en) 2014-10-22
EP2815504A1 (en) 2014-12-24
US20130207745A1 (en) 2013-08-15

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