CN109510605A - The bandpass filter inhibited with inherent Wide stop bands - Google Patents
The bandpass filter inhibited with inherent Wide stop bands Download PDFInfo
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- CN109510605A CN109510605A CN201811277498.0A CN201811277498A CN109510605A CN 109510605 A CN109510605 A CN 109510605A CN 201811277498 A CN201811277498 A CN 201811277498A CN 109510605 A CN109510605 A CN 109510605A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/12—Bandpass or bandstop filters with adjustable bandwidth and fixed centre frequency
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
Abstract
The invention discloses a kind of bandpass filters inhibited with inherent Wide stop bands.The filter includes: the first inductance, the second inductance, first capacitor and the second capacitor；First inductance two-terminal-grounding, the second inductance two-terminal-grounding, the first inductance and the second inductance carry out energy transmission by inductive coupling mode；Filter input end is connected with the first inductance coil, and filter output is connected with the second inductance coil；First capacitor one end is connected with the input terminal, and first capacitor other end ground connection, second capacitor one end is connected with the output end, second capacitor other end ground connection, and the capacitance of two capacitors is equal；First inductance and the second inductance use the metal layer TM2 of the top layer of default layer structure, first capacitor and the second capacitor are using the metal-insulator-metal type layer MIM for presetting layer structure, the filter, which realizes, is placed on two resonance poles in bandwidth, possess low insertion loss, physical size it is small, the advantages that filtering performance of the high-frequency region without harmonic wave interference and filter is good.
Description
Technical field
The present invention relates to wave filter technology fields, filter in particular to a kind of band logical inhibited with inherent Wide stop bands
Wave device.
Background technique
Coupling inductor is a kind of passive structures of classics, is widely used in the building for realizing number of modules, especially core
The device of on piece.For example, coupling inductor has been applied to the Design of Bandpass on the chip of pseudo millimeteric wave and millimeter wave
Achieve some breakthroughs.Wherein, the bandpass filter realized using standard semiconductor techniques, such as GaAs (Gallium
Arsenide, GaAs are a kind of high-speed semiconductor materials), CMOS (Complementary Metal Oxide
Semiconductor, complementary metal oxide semiconductor) and SiGe (SiGe), have low insertion loss, big fractional bandwidth,
The advantages that good bandpass flatness and the physical size of miniaturization.However, most of existing bandpass filter can only be
Suitable stopband is provided in limited frequency band to inhibit.Conventional method generates additionally usually using open circuit or short branch at stopband
Transmission zero so that bandpass filter have relatively large chip area, and then realize bandpass filter Wide stop bands inhibit.
In existing wave filter technology, (1) traditional filter based on resonator design is had the disadvantage that, only
With limited stopband rejection ability, the defect grounding structure used can improve harmonics restraint, but be only limitted to limited band
It is wide；(2) existing compact on piece bandpass filter has improved inband flatness in 0.13 μm of (Bi)-CMOS technology
And stopband attenuation, but use the design principle for being not suitable for narrowband design；(3) bandpass filtering of 30GHz or so is operated in
Device, for example, the band logical using 0.13 μm of SiGe technology for providing in the broadside coupled meander line resonator of Millimeter Wave Applications is filtered
The physical structure of wave device, the bandpass filter is not compact enough, while having higher insertion loss.Based on this, band is improved
The Wide stop bands inhibition of bandpass filter becomes especially challenging.
Summary of the invention
The present invention is directed to solve at least one of the technical problems existing in the prior art or related technologies.
For this purpose, it is an object of the invention to propose a kind of bandpass filter inhibited with inherent Wide stop bands.
To achieve the goals above, technical solution of the present invention provides a kind of band logical filter inhibited with inherent Wide stop bands
Wave device, comprising: the first inductance, the second inductance, first capacitor and the second capacitor；Wherein, the both ends of first inductance connect respectively
The both ends on ground, second inductance are grounded respectively, between first inductance and the second inductance by way of inductive coupling into
Row energy transmission；The coil phase of the input terminal and first inductance of the bandpass filter that there are inherent Wide stop bands to inhibit
Even, the output end of the bandpass filter that there are inherent Wide stop bands to inhibit is connected with the coil of second inductance；Described
One end of one capacitor is connected with the input terminal, the other end ground connection of the first capacitor, one end of second capacitor and institute
It states output end to be connected, the other end ground connection of second capacitor, and the capacitor of the capacitance of the first capacitor and the second capacitor
It is worth equal；And first inductance and the second inductance are realized by presetting the metal layer TM2 of the top layer of layer structure, described the
One capacitor and the second capacitor are realized by presetting the metal-insulator-metal type layer MIM of layer structure.
Preferably, the default layer structure include: the metal layer TM2 being arranged successively, the metal layer TM1, metal layer M5,
Metal layer M4, metal layer M3, metal layer M2, metal layer M1 and the silicon substrate layer positioned at the bottom of the described first default layer structure；
Between the metal layer TM2 and metal layer TM1, between metal layer TM1 and metal layer M5, between metal layer M5 and metal layer M4,
It is between metal layer M4 and metal layer M3, between metal layer M3 and metal layer M2 and between metal layer M2 and metal layer M1
Silicon dioxide layer；And the metal-insulator-metal type layer MIM is by the metal layer TM1, metal layer M5 and between the two
Silicon dioxide layer composition.
Preferably, the metal layer TM1, the metal layer TM2, metal layer M5, metal layer M4, metal layer M3, metal layer
M2 and metal layer M1 is aluminum metal layer.
Preferably, the range of the fore-and-aft distance between first inductance and the second inductance are as follows: 2 to 6 μm；First electricity
The length range of sense and the second inductance is equal are as follows: 250 to 300 μm；The width range of first inductance and the second inductance is equal are as follows: 2
To 3 μm；The distance range of two ground terminals and the input terminal of first inductance is equal are as follows: 125 to 150 μm；And it is described
The distance range of two ground terminals and the output end of second inductance is equal are as follows: 125 to 150 μm.
Preferably, the fore-and-aft distance between first inductance and the second inductance is 2 μm；First inductance and the second electricity
The length of sense is 268 μm；The width of first inductance and the second inductance is 2 μm；Two of first inductance connect
Ground terminal is 128 μm at a distance from the input terminal；And two ground terminals of second inductance and the output end away from
From being 128 μm.
Preferably, the metal layer TM2 with a thickness of 3 μm；The metal layer TM1 with a thickness of 2 μm；The metal layer
M5, metal layer M4, metal layer M3, metal layer M2 and metal layer M1 thickness be 0.49 μm；And the thickness of the silicon substrate layer
Degree is 100 μm.
Beneficial effects of the present invention:
The bandpass filter provided by the invention that there are inherent Wide stop bands to inhibit, including the first inductance, the second inductance, first
Capacitor and the second capacitor.Specifically, by using energy is carried out between the first inductance and the second inductance by way of inductive coupling
Amount transmission forms coupled-inductor structure by the first inductance and the second inductance to realize；Further, using the first inductance and
Second inductance realizes that first capacitor and the second capacitor pass through default layer knot by the metal layer TM2 of the top layer of default layer structure
The metal-insulator-metal type layer MIM of structure has reached to realize and has used a pair of of metal-insulator-metal type layer MIM capacitor and one
The combination of a coupled-inductor structure carries out Design of Bandpass of the invention, with traditional filtering based on resonator design
Device is compared, and bandpass filter provided by the invention is inhibiting on wide bandwidth with interior, and realizes the resonance of filter
Two resonant pole points that cavity generates effectively are tuned, and two resonance poles are placed in bandwidth, so that bandwidth becomes
It is narrow, the bandwidth Design problem of filter can be efficiently solved, so that the coupled-inductor structure formed is capable of providing without spuious
Frequency response so that the bandpass filter inhibited with inherent Wide stop bands of the invention has good filtering performance.
Additional aspect and advantage of the invention will become obviously in the following description, or practice understanding through the invention
It arrives.
Detailed description of the invention
The structure that Fig. 1 a shows the bandpass filter that there are inherent Wide stop bands to inhibit of one embodiment of the present of invention is bowed
Depending on schematic diagram；
Fig. 1 b shows the structure side of the bandpass filter that there are inherent Wide stop bands to inhibit of one embodiment of the present of invention
Depending on schematic diagram；
Fig. 2 shows for designing the equivalent electricity of simplification LC of the bandpass filter that there are inherent Wide stop bands to inhibit of the invention
Road model schematic.
Fig. 3 shows the LC equivalent circuit mould for analyzing the bandpass filter that there are inherent Wide stop bands to inhibit of the invention
Type schematic diagram.
Fig. 4 shows the resonance that the bandpass filter that there are inherent Wide stop bands to inhibit of one embodiment of the present of invention generates
The position view of pole.
Fig. 5 shows the lossless LC equivalent-circuit model of the bandpass filter shown in Fig. 3 that there are inherent Wide stop bands to inhibit
Simulation curve figure；
Fig. 6 shows the bandpass filter that there are inherent Wide stop bands to inhibit of one embodiment of the present of invention in Fig. 1
Physical parameter Ga, C1 and La NI-AWR all-wave EM solver analog result curve graph；
Fig. 7 shows the analog result and filter of the NI-AWR all-wave EM solver of the lossless LC equivalent-circuit model in Fig. 3
The contrast curve chart of the actual test result of wave device.
Specific embodiment
To better understand the objects, features and advantages of the present invention, with reference to the accompanying drawing and specific real
Applying mode, the present invention is further described in detail.It should be noted that in the absence of conflict, the implementation of the application
Feature in example and embodiment can be combined with each other.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, still, the present invention may be used also
To be implemented using other than the one described here other modes, therefore, protection scope of the present invention is not limited to following public affairs
The limitation for the specific embodiment opened.
The structure that Fig. 1 a shows the bandpass filter that there are inherent Wide stop bands to inhibit of one embodiment of the present of invention is bowed
Depending on schematic diagram.As shown in Figure 1a, a kind of bandpass filter inhibited with inherent Wide stop bands, comprising: the first inductance LM, second electricity
Feel LN, first capacitor C1With the second capacitor C2；Wherein, the first inductance LMBoth ends be grounded respectively, the second inductance LN's
Both ends are grounded respectively, the first inductance LMWith the second inductance LNBetween energy transmission is carried out by way of inductive coupling；It is described
Input terminal Port1 and the first inductance L with the bandpass filter that inherent Wide stop bands inhibitMCoil be connected, the tool
The output end Port2 and the second inductance L for the bandpass filter for thering are inherent Wide stop bands to inhibitNCoil be connected；Described first
Capacitor C1One end be connected with the input terminal Port1, the first capacitor C1The other end ground connection, the second capacitor C2's
One end is connected with the output end Port2, the second capacitor C2Other end ground connection, and the first capacitor C1Capacitance
With the second capacitor C2Capacitance it is equal；The first inductance LMWith the second inductance LNBy the metal for presetting the top layer of layer structure
Layer TM2 realize, the first capacitor C1With the second capacitor C2By preset layer structure metal-insulator-metal type layer MIM come
It realizes.
The bandpass filter provided by the invention that there are inherent Wide stop bands to inhibit, including the first inductance LM, the second inductance LN、
First capacitor C1With the second capacitor C2.Specifically, by using the first inductance LMWith the second inductance LNBetween by inductive coupling
Mode carries out energy transmission, passes through the first inductance L to realizeMWith the second inductance LNForm coupled-inductor structure；Further,
Using the first inductance LMWith the second inductance LNIt is realized by the metal layer TM2 of the top layer of default layer structure, first capacitor C1With
Two capacitor C2It is realized, has been reached using a pair of of metal-insulator by presetting the metal-insulator-metal type layer MIM of layer structure
The combination of body-metal layer MIM capacitor and a coupled-inductor structure carries out Design of Bandpass of the invention, with tradition
The filter based on resonator design compare, bandpass filter provided by the invention have on wide bandwidth it is interior inhibiting, and
And realize and effectively tuned two resonant pole points of the resonant cavity generation of filter, two resonance poles are put
It sets in bandwidth, so that bandwidth narrows, the bandwidth Design problem of filter can be efficiently solved, so that the coupling inductance formed
Device structure is capable of providing without spuious frequency response, so that the bandpass filter that there are inherent Wide stop bands to inhibit of the invention
With good filtering performance；In actual production technique, the first inductance and the second inductance are exactly in the metal for presetting layer structure
It carves to come above layer TM2, plays the role of inductance, and the metal-insulator-metal type layer MIM of default layer structure is divided into the
One capacitor and the second capacitor, play the role of first capacitor and the second capacitor and first capacitor and the second capacitor is embedded in
It is outputting and inputting below feed line, is not needing additional region.
Fig. 1 b shows the structure side of the bandpass filter that there are inherent Wide stop bands to inhibit of one embodiment of the present of invention
Depending on schematic diagram.As shown in Figure 1 b, the default layer structure includes: the metal layer TM2 being arranged successively, the metal layer TM1, metal
Layer M5, metal layer M4, metal layer M3, metal layer M2, metal layer M1 and the silicon substrate positioned at the bottom of the described first default layer structure
Plate layer；Between the metal layer TM2 and metal layer TM1, between metal layer TM1 and metal layer M5, metal layer M5 and metal layer M4
Between, between metal layer M4 and metal layer M3, between metal layer M3 and metal layer M2 and between metal layer M2 and metal layer M1
It is silicon dioxide layer；The metal-insulator-metal type layer MIM is by the metal layer TM1, metal layer M5 and between the two
Silicon dioxide layer composition.The metal layer TM2, metal layer TM1, metal layer M5 and metal layer M2 are aluminum metal layer.
In the present embodiment, default layer structure of the invention be designed with 0.13- μm of (Bi)-CMOS technology of standard and
Implement.Specifically, presetting layer structure includes: the metal layer TM2 being arranged successively from top layer to bottom, metal layer TM1, metal layer
M5, metal layer M4, metal layer M3, metal layer M2, metal layer M1 and the silicon substrate layer positioned at the bottom of default layer structure；Metal layer
Between TM2 and metal layer TM1, between metal layer TM1 and metal layer M5, between metal layer M5 and metal layer M4, metal layer M4 and
Between metal layer M3, between metal layer M3 and metal layer M2 and between metal layer M2 and metal layer M1 be silicon dioxide layer；
Silicon dioxide layer of the metal-insulator-metal type layer MIM by metal layer TM1, metal layer M5 and between the two forms, so that this hair
The transmission pole that the bright bandpass filter that there are inherent Wide stop bands to inhibit generates can be efficiently controlled and be placed on passband
It is interior.
In one embodiment of the invention, the range of the fore-and-aft distance between first inductance and the second inductance are as follows: 2
To 6 μm；The length range of first inductance and the second inductance is equal are as follows: 250 to 300 μm；First inductance and the second inductance
Width range it is equal are as follows: 2 to 3 μm；The distance range of two ground terminals and the input terminal of first inductance is equal are as follows: 125
To 150 μm；And the distance range of two ground terminals and the output end of second inductance is equal are as follows: 125 to 150 μm.
In the present embodiment, due to damaging silicon substrate and kelvin effect caused by limited metal thickness to insertion loss
The main reason for having an adverse effect, and leading to the high insertion loss of silicon substrate design is the ohmic loss of metallic conductor.Especially
Its ground, the design under pseudo millimeteric wave region (such as 20 to 40GHz) is due to biggish physical size, it is extremely difficult to realize filter
Low insertion loss.However the physical size of filter minimizes, the bandpass filter run at 60GHz and frequencies above has
Better insertion loss.It therefore, is the insertion loss for reducing bandpass filter, the present embodiment is small by carrying out to bandpass filter
Typeization design, so that bandpass filter provided by the invention possesses low insertion loss, while there is good stopband to inhibit, physics
Size is substantially reduced, and further optimizes the filter of bandpass filter of the invention without harmonic wave interference in high-frequency region
Wave performance.
As shown in Figure 1 b, the metal layer TM2 with a thickness of 3 μm；The metal layer TM1 with a thickness of 2 μm；The metal
Layer M5, metal layer M4, metal layer M3, metal layer M2 and metal layer M1 thickness be 0.49 μm；The thickness of the silicon substrate layer
It is 100 μm；And the upper surface of the metal layer TM1 is 4 μm at a distance from the lower surface of the metal layer M2.
In the present embodiment, by setting the thickness of the thickness of each metal layer of default layer structure and silicon substrate layer to
Fixed value may be implemented that bandpass filter of the invention is preferably carried out Miniaturization Design, with traditional " compact on piece
The bandpass filter of 60GHz H-shaped resonator " is compared, and bandpass filter of the invention possesses preferably low insertion loss, is realized
Better stopband inhibits, while significantly reducing physical size.
As shown in Figure 1a, the first inductance LMWith the second inductance LNBetween fore-and-aft distance be Ga=2 μm；Described first
Inductance LMWith the second inductance LNLength be La=268 μm；The second inductance LNWidth be Wa=2 μm；First electricity
Feel LMTwo ground terminals at a distance from the input terminal be Lb=128 μm, the setting of above-mentioned parameter is realized band of the invention
Bandpass filter carries out Miniaturization Design, so that bandpass filter of the invention possesses preferably low insertion loss, while having more
Good stopband inhibits.In specific embodiment, the first inductance LMWidth may be Wa=2 μm, the second inductance LN's
Two ground terminals may be L at a distance from the output endb=128 μm.
Fig. 2 shows for designing the equivalent electricity of simplification LC of the bandpass filter that there are inherent Wide stop bands to inhibit of the invention
Road model schematic.The simplification LC equivalent circuit of the bandpass filter that there are inherent Wide stop bands to inhibit of the invention based on Fig. 2
The design of model, Fig. 3 show the equivalent electricity of LC for analyzing the bandpass filter that there are inherent Wide stop bands to inhibit of the invention
Road model schematic.The simplification LC equivalent-circuit model for establishing bandpass filter of the invention shown in Fig. 3 carries out theory analysis,
And result will be analyzed as design guidelines, it is correctly, from reason to go the mentality of designing for proving bandpass filter of the invention
It goes to instruct simulation analysis and actual design by analysis, and then removes to optimize the filtering performance of bandpass filter of the invention.
As shown in figure 3, L1 indicates the first inductance LMWith the second inductance LNInductance value, Lm indicate the first inductance LMWith second
Inductance LNBetween the inductance that intercouples value, first capacitor and the second capacitor are C1=C2=0.45PF, L1=65PH, Lm
=13PH.By using on the metal-insulator-metal type layer MIM of default layer structure first capacitor and the second capacitor can get
Relatively large capacitor, and the first inductance and the second inductance on the metal layer TM2 for presetting the top layer of layer structure is used to can get
Relatively small inductance, therefore set using the miniaturization that bandpass filter of the invention may be implemented in the combination of bulky capacitor and small inductor
Meter.
The present invention also provides it is a kind of with inherent Wide stop bands inhibit bandpass filter design method, the first inductance and
The inductance value of second inductance is L1, the inductance value that intercouples between the first inductance and the second inductance is Lm, the electricity of first capacitor
Capacitance is C1, the capacitance of the second capacitor is C2, and C1=C2, the design method includes: fixed Lm, C1And C2Value, adjustment
L1Value, with change two resonance poles position；Fixed L1, C1 and C2Value, the value of Lm is adjusted, to verify the value of Lm and the
The coupling factor for the coupled-inductor structure that one inductance and the second inductance are formed is related；And fixed Lm and L1Value, adjust C1With
C2Value, to verify the physical size for reducing in the case where not increasing bandwidth the bandpass filter.
In specific embodiment, as shown in figure 4, increasing L1, C in Fig. 31Or C2Value, the resonant cavity of filter is generated
Two resonance poles be all moved to lower frequency, the filtering performance of bandpass filter of the invention is able to freely carry out excellent
Change design.
Further, based on the formula expression of resonance frequency:It can be with
Learn: the frequency distance between resonance pole is bigger, and the bandwidth of filter is wider.Therefore, in order to adjust the position of resonance pole,
The bandwidth of bandpass filter of the invention is correspondingly controlled, all over the filtering for preferably optimizing bandpass filter of the invention
Energy；
Specifically, as shown in the figure (a) in Fig. 4, L1Value be variation, and Lm, C1And C2Value be fixed to
13pH, 0.45pF and 0.45pF, as Lm, C1And C2When fixed, by adjusting the value of L1, effectively change two resonance poles
Position；As shown in the figure (b) in Fig. 4, the value of Lm is variation, and L1, C1 and C2Value be fixed to 65pH, 0.45pF and
0.45pF, as L1, C1 and C2When fixed, the coupling for the coupled-inductor structure that the value of Lm and the first inductance and the second inductance are formed
It is factor-related；As shown in the figure (c) in Fig. 4, change C1And C2Value, and the value of Lm and L1 is fixed to 13pH and 65pH, when
When Lm and L1 is fixed, the position of resonance pole is only by applying relatively large capacitor by edge effect, so not increasing
It can the significant physical size for reducing bandpass filter of the invention in the case where bandwidth.
Using NI-AWR, (wherein, NI, full name National Instruments, refers to National Instruments to the present invention；
AWR refers to AWR group company, the U.S.) all-wave EM solver, actual emulation is done, to design and optimize band logical of the invention
The specific structure parameter of filter.By the structure of the available emulation of all-wave EM solver, for actual bandpass filtering
Parameter adjusting and optimizing in the design process of device plays the role of practical application.Certainly, all-wave EM solver is not uniquely may be used
To do this simulation work, the product of other companies production also has similar function.
In one embodiment of the invention, the fore-and-aft distance between first inductance and the second inductance is Ga, described
The length of first inductance and the second inductance is La, the design method further include: fixed La, C1And C2Value, adjust the value of Ga
Change between 2 to 6 μm, the bandwidth of filter can be efficiently controlled without influencing centre frequency to verify the value of change Ga；Gu
Determine the value of Ga and La, adjusts C1And C2Value change 0.36 between 0.54pF, with the lesser C of verification setting1Or La value, in
Frequency of heart can be displaced to higher frequency；Fixed Ga and C1Value, the value for adjusting La changes between 188 to 268 μm, to test
Lesser C is arranged in card1Or La value, centre frequency can be displaced to higher frequency.
In specific embodiment, Fig. 5 shows the band logical filter that there are inherent Wide stop bands to inhibit of one embodiment of the present of invention
Curve graph of the wave device for the analog result of the NI-AWR all-wave EM solver of physical parameter Ga, C1 and La in Fig. 1.Such as Fig. 5
(a) shown in, the value of Ga changes between 2 to 6 μm, by being respectively set Ga=2 μm, Ga=4 μm and Ga=6 μm, and La, C1With
C2Value be fixed to 268 μm, 0.45pF and 0.45pF, from the simulation curve of Fig. 5 (a) it follows that by changing Ga's
Value can efficiently control the bandwidth of filter without influencing centre frequency；As shown in Fig. 5 (b), C1And C2Value 0.36 to
Change between 0.54pF, by the way that C is respectively set1=C2=0.36pF, C1=C2=0.45pF and C1=C2=0.54pF, and Ga and
The value of La is fixed to 2 μm and 268 μm；As shown in Fig. 5 (c), the value of La changes between 188 to 268 μm, by setting respectively
Set La=188 μm, La=228 μm and La=268 μm, and Ga and C1Value be fixed to 2 μm and 0.45pF；From Fig. 6 (b) and
6 (c) simulation curve is it follows that if select lesser C1Or La value, then centre frequency can be displaced to higher frequency.
In one embodiment of the invention, the design side of the bandpass filter that there are inherent Wide stop bands to inhibit
Method, which is characterized in that further include: the value of fixed L1, C1 and C2, the value for adjusting Lm change from 11pH to 15pH, can to verify Lm
To control the bandwidth of bandpass filter in the case where not changing centre frequency；The value of fixed L1 and Lm, adjusts C1Value from
0.4pF to 0.5pF variation, to verify C1And C2It can be used for tuning centre frequency；And the value of fixed Lm, C1 and C2, adjust L1's
Value changes from 11pH to 15pH, can be used for tuning centre frequency to verify L1.
In specific embodiment, Fig. 6 shows the LC for adjusting the bandpass filter shown in Fig. 3 that there are inherent Wide stop bands to inhibit
Circuit parameter Lm, L of equivalent-circuit model1And C1NI-AWR all-wave EM solver simulation curve figure.Such as the figure (a) in Fig. 6
Shown, Lm is scanned from 11pH to 15pH, is divided into 2pH, and L1=65pH and C1=0.45pF；As shown in the figure (b) in Fig. 6, C1
=C2With the step-length of 0.05pF from 0.4 scanning to 0.5pF, and Lm=13pH, L1=65pH；As shown in the figure (c) in Fig. 6, L1
It is scanned from 60pH to 70pH, while Lm=13pH, C with the step-length of 5pH1=C2=0.45pF.From Fig. 6 (a), Fig. 6 (b) and Fig. 6
(c) simulation curve is it follows that C1、C2It can be used for tuning centre frequency with L1, and Lm can be in the feelings for not changing centre frequency
The bandwidth of bandpass filter is controlled under condition.
According to the simulation analysis of Fig. 5 and Fig. 6, we are available it is anticipated that the circuit parameter and filter wanted
Physical size, to carry out actual processing.Process the object of obtained band pass filter circuit parameter and filter of the invention
Manage size specifically: Lm=13pH, C1=C2=0.45pF, L1=65pH, La=268 μm and Ga=2 μm.Wherein, first is default
Layer structure and the second default layer structure are manufactured using 0.13- μm of standard (Bi)-CMOS technology, do not include pad and circuit
Chip size, the bandpass filter are only 0.06 × 0.284mm2.Use the vector network analyzer (VNA) of Anritsu
ME7838A is detected by the G-S-G on wafer, and measurement is up to the S parameter of the bandpass filter of 67GHz.By reference planes from setting
Standby connector is moved to the tip of RF probe, is carried out by using calibrating on traditional short load-open circuit (SLOT) chip
Measurement.
It is tested by the bandpass filter of the invention obtained to processing, by the result of test result and simulation analysis
It compares, the S21 and S11 for drawing Fig. 7 are used to compare, the NI-AWR all-wave of the lossless LC equivalent-circuit model in simulation drawing 3
The analog result of EM solver and the actual test result of filter.As shown in fig. 7, the S11 of the actual measured results of filter
Stopband of the curve within the scope of 25GHz to 31GHz inhibits to be better than -10dB, while the actual test result of filter can measure
The up to S parameter of the bandpass filter of 67GHz, and S21 has only arrived 120GH, actual test result has reached our expection
Filter design requirement, it is almost the same with simulation result.
In conclusion obtaining the reasonable consistency between EM emulation and bandpass filter measurement.And the lossless equivalent electricity of LC
Difference between road model and EM simulation result mainly due to damage silicon substrate to coupled-inductor structure have limited Q because
Son.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (6)
1. a kind of bandpass filter inhibited with inherent Wide stop bands characterized by comprising the first inductance, the second inductance, the
One capacitor and the second capacitor；
Wherein, the both ends of first inductance are grounded respectively, and the both ends of second inductance are grounded respectively, first inductance and
Energy transmission is carried out between second inductance by way of inductive coupling；
The input terminal of the bandpass filter that there are inherent Wide stop bands to inhibit is connected with the coil of first inductance, the tool
The output end for the bandpass filter for having inherent Wide stop bands to inhibit is connected with the coil of second inductance；
One end of the first capacitor is connected with the input terminal, the other end ground connection of the first capacitor, second capacitor
One end be connected with the output end, the other end of second capacitor ground connection, and the capacitance of the first capacitor and second
The capacitance of capacitor is equal；And
First inductance and the second inductance realized by presetting the metal layer TM2 of the top layer of layer structure, the first capacitor
It is realized with the second capacitor by presetting the metal-insulator-metal type layer MIM of layer structure.
2. the bandpass filter according to claim 1 that there are inherent Wide stop bands to inhibit, which is characterized in that
The default layer structure includes: the metal layer TM2 being arranged successively, the metal layer TM1, metal layer M5, metal layer M4, gold
Belong to layer M3, metal layer M2, metal layer M1 and the silicon substrate layer positioned at the bottom of the described first default layer structure；
Between the metal layer TM2 and metal layer TM1, between metal layer TM1 and metal layer M5, metal layer M5 and metal layer M4 it
Between, between metal layer M4 and metal layer M3, between metal layer M3 and metal layer M2 and between metal layer M2 and metal layer M1
For silicon dioxide layer；And
Silicon dioxide layer group of the metal-insulator-metal type layer MIM by the metal layer TM1, metal layer M5 and between the two
At.
3. the bandpass filter according to claim 2 that there are inherent Wide stop bands to inhibit, which is characterized in that the metal layer
TM1, the metal layer TM2, metal layer M5, metal layer M4, metal layer M3, metal layer M2 and metal layer M1 are aluminum metal layer.
4. the bandpass filter according to claim 1 that there are inherent Wide stop bands to inhibit, which is characterized in that
The range of fore-and-aft distance between first inductance and the second inductance are as follows: 2 to 6 μm；
The length range of first inductance and the second inductance is equal are as follows: 250 to 300 μm；
The width range of first inductance and the second inductance is equal are as follows: 2 to 3 μm；
The distance range of two ground terminals and the input terminal of first inductance is equal are as follows: 125 to 150 μm；And
The distance range of two ground terminals and the output end of second inductance is equal are as follows: 125 to 150 μm.
5. the bandpass filter according to claim 4 that there are inherent Wide stop bands to inhibit, which is characterized in that
Fore-and-aft distance between first inductance and the second inductance is 2 μm；
The length of first inductance and the second inductance is 268 μm；
The width of first inductance and the second inductance is 2 μm；
Two ground terminals of first inductance are 128 μm at a distance from the input terminal；And
Two ground terminals of second inductance are 128 μm at a distance from the output end.
6. the bandpass filter according to claim 2 that there are inherent Wide stop bands to inhibit, which is characterized in that
The metal layer TM2 with a thickness of 3 μm；
The metal layer TM1 with a thickness of 2 μm；
The metal layer M5, metal layer M4, metal layer M3, metal layer M2 and metal layer M1 thickness be 0.49 μm；And
The silicon substrate layer with a thickness of 100 μm.
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| CN112072221A (en) * | 2020-08-13 | 2020-12-11 | 吉林大学 | On-chip millimeter wave band-pass filter with MPG element based on coupled line structure |
| CN112087211A (en) * | 2020-08-13 | 2020-12-15 | 国网浙江省电力有限公司信息通信分公司 | MPG element-based millimeter wave band-pass filter loaded with resonator on chip |
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