IN2014MN01576A - - Google Patents

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Publication number
IN2014MN01576A
IN2014MN01576A IN1576MUN2014A IN2014MN01576A IN 2014MN01576 A IN2014MN01576 A IN 2014MN01576A IN 1576MUN2014 A IN1576MUN2014 A IN 1576MUN2014A IN 2014MN01576 A IN2014MN01576 A IN 2014MN01576A
Authority
IN
India
Prior art keywords
inductor
glass substrate
capacitor
tgvs
filter circuit
Prior art date
Application number
Other languages
English (en)
Inventor
Changhan Yun
Chengjie Zuo
Chi Shun Lo
Jonghae Kim
Mario F Velez
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of IN2014MN01576A publication Critical patent/IN2014MN01576A/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/09—Filters comprising mutual inductance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1708—Comprising bridging elements, i.e. elements in a series path without own reference to ground and spanning branching nodes of another series path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1766—Parallel LC in series path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1775—Parallel LC in shunt or branch path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1783—Combined LC in series path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F17/0033—Printed inductances with the coil helically wound around a magnetic core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H01F2017/0026—Multilayer LC-filter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/004—Printed inductances with the coil helically wound around an axis without a core
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0085—Multilayer, e.g. LTCC, HTCC, green sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Filters And Equalizers (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
  • Coils Or Transformers For Communication (AREA)
IN1576MUN2014 2012-02-13 2013-02-11 IN2014MN01576A (enExample)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261597953P 2012-02-13 2012-02-13
US13/419,876 US20130207745A1 (en) 2012-02-13 2012-03-14 3d rf l-c filters using through glass vias
PCT/US2013/025620 WO2013122887A1 (en) 2012-02-13 2013-02-11 3d rf l-c filters using through glass vias

Publications (1)

Publication Number Publication Date
IN2014MN01576A true IN2014MN01576A (enExample) 2015-07-03

Family

ID=48945118

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1576MUN2014 IN2014MN01576A (enExample) 2012-02-13 2013-02-11

Country Status (7)

Country Link
US (1) US20130207745A1 (enExample)
EP (1) EP2815504A1 (enExample)
JP (1) JP2015513820A (enExample)
KR (1) KR20140127872A (enExample)
CN (1) CN104115399A (enExample)
IN (1) IN2014MN01576A (enExample)
WO (1) WO2013122887A1 (enExample)

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US9431473B2 (en) 2012-11-21 2016-08-30 Qualcomm Incorporated Hybrid transformer structure on semiconductor devices
US9203373B2 (en) * 2013-01-11 2015-12-01 Qualcomm Incorporated Diplexer design using through glass via technology
US10002700B2 (en) 2013-02-27 2018-06-19 Qualcomm Incorporated Vertical-coupling transformer with an air-gap structure
US20140247269A1 (en) * 2013-03-04 2014-09-04 Qualcomm Mems Technologies, Inc. High density, low loss 3-d through-glass inductor with magnetic core
US9634645B2 (en) 2013-03-14 2017-04-25 Qualcomm Incorporated Integration of a replica circuit and a transformer above a dielectric substrate
US9935166B2 (en) 2013-03-15 2018-04-03 Qualcomm Incorporated Capacitor with a dielectric between a via and a plate of the capacitor
US9634640B2 (en) 2013-05-06 2017-04-25 Qualcomm Incorporated Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) and related components and methods
US9425761B2 (en) * 2013-05-31 2016-08-23 Qualcomm Incorporated High pass filters and low pass filters using through glass via technology
US9264013B2 (en) 2013-06-04 2016-02-16 Qualcomm Incorporated Systems for reducing magnetic coupling in integrated circuits (ICS), and related components and methods
US9449753B2 (en) 2013-08-30 2016-09-20 Qualcomm Incorporated Varying thickness inductor
US20150092314A1 (en) * 2013-09-27 2015-04-02 Qualcomm Incorporated Connector placement for a substrate integrated with a toroidal inductor
US9692386B2 (en) 2013-12-23 2017-06-27 Qualcomm Incorporated Three-dimensional wire bond inductor
US9906318B2 (en) 2014-04-18 2018-02-27 Qualcomm Incorporated Frequency multiplexer
EP3920200A1 (en) * 2014-05-05 2021-12-08 3D Glass Solutions, Inc. 2d and 3d inductors antenna and transformers fabricating photoactive substrates
US9443921B2 (en) 2015-02-10 2016-09-13 Advanced Semiconductor Engineering, Inc. Semiconductor package structure and semiconductor manufacturing process
US9634823B1 (en) 2015-10-13 2017-04-25 Kumu Networks, Inc. Systems for integrated self-interference cancellation
US10069474B2 (en) 2015-11-17 2018-09-04 Qualcomm Incorporated Encapsulation of acoustic resonator devices
EP3391459B1 (en) 2015-12-16 2022-06-15 Kumu Networks, Inc. Time delay filters
US12165809B2 (en) 2016-02-25 2024-12-10 3D Glass Solutions, Inc. 3D capacitor and capacitor array fabricating photoactive substrates
US9979374B2 (en) 2016-04-25 2018-05-22 Kumu Networks, Inc. Integrated delay modules
US10454444B2 (en) 2016-04-25 2019-10-22 Kumu Networks, Inc. Integrated delay modules
US9780048B1 (en) * 2016-08-03 2017-10-03 Qualcomm Incorporated Side-assembled passive devices
US10163771B2 (en) * 2016-08-08 2018-12-25 Qualcomm Incorporated Interposer device including at least one transistor and at least one through-substrate via
JP6838328B2 (ja) * 2016-09-15 2021-03-03 大日本印刷株式会社 インダクタおよびインダクタの製造方法
WO2018183384A1 (en) 2017-03-27 2018-10-04 Kumu Networks, Inc. Systems and methods for intelligently-tunded digital self-interference cancellation
US10582609B2 (en) 2017-10-30 2020-03-03 Qualcomm Incorporated Integration of through glass via (TGV) filter and acoustic filter
CN215871340U (zh) * 2017-11-30 2022-02-18 株式会社村田制作所 滤波器电路以及合分波器
US10854946B2 (en) 2017-12-15 2020-12-01 3D Glass Solutions, Inc. Coupled transmission line resonate RF filter
CN108198803B (zh) * 2018-01-15 2023-05-09 宁波大学 一种基于硅通孔技术的三维带通滤波器
JP7106875B2 (ja) 2018-01-30 2022-07-27 凸版印刷株式会社 ガラスコアデバイスの製造方法
JP7096346B2 (ja) 2018-02-27 2022-07-05 クム ネットワークス，インコーポレイテッド 設定可能なハイブリッド自己干渉キャンセルシステムおよび方法
JP7509035B2 (ja) * 2018-05-24 2024-07-02 Ｔｏｐｐａｎホールディングス株式会社 回路基板
CN109510605A (zh) * 2018-10-30 2019-03-22 吉林大学 具有内在宽阻带抑制的带通滤波器
WO2020116228A1 (ja) * 2018-12-04 2020-06-11 凸版印刷株式会社 回路基板
JP7188101B2 (ja) * 2019-01-15 2022-12-13 凸版印刷株式会社 高周波モジュール用電子基板
US10868661B2 (en) 2019-03-14 2020-12-15 Kumu Networks, Inc. Systems and methods for efficiently-transformed digital self-interference cancellation
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US11605620B2 (en) * 2020-06-19 2023-03-14 Qualcomm Incorporated Three-dimensional (3D) integrated circuit with passive elements formed by hybrid bonding
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Also Published As

Publication number Publication date
US20130207745A1 (en) 2013-08-15
JP2015513820A (ja) 2015-05-14
KR20140127872A (ko) 2014-11-04
CN104115399A (zh) 2014-10-22
EP2815504A1 (en) 2014-12-24
WO2013122887A1 (en) 2013-08-22

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