JP2016511941A5 - - Google Patents
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- Publication number
- JP2016511941A5 JP2016511941A5 JP2015558082A JP2015558082A JP2016511941A5 JP 2016511941 A5 JP2016511941 A5 JP 2016511941A5 JP 2015558082 A JP2015558082 A JP 2015558082A JP 2015558082 A JP2015558082 A JP 2015558082A JP 2016511941 A5 JP2016511941 A5 JP 2016511941A5
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- layer
- capacitor structure
- mim
- interconnect layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims 48
- 239000002184 metal Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 4
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/770,127 US8980708B2 (en) | 2013-02-19 | 2013-02-19 | Complementary back end of line (BEOL) capacitor |
| US13/770,127 | 2013-02-19 | ||
| PCT/US2014/015855 WO2014130299A1 (en) | 2013-02-19 | 2014-02-11 | Complementary back end of line (beol) capacitor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018039621A Division JP2018093232A (ja) | 2013-02-19 | 2018-03-06 | 相補型バックエンドオブライン（ｂｅｏｌ）キャパシタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016511941A JP2016511941A (ja) | 2016-04-21 |
| JP2016511941A5 true JP2016511941A5 (enExample) | 2017-02-23 |
Family
ID=50189777
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015558082A Pending JP2016511941A (ja) | 2013-02-19 | 2014-02-11 | 相補型バックエンドオブライン（ｂｅｏｌ）キャパシタ |
| JP2018039621A Pending JP2018093232A (ja) | 2013-02-19 | 2018-03-06 | 相補型バックエンドオブライン（ｂｅｏｌ）キャパシタ |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018039621A Pending JP2018093232A (ja) | 2013-02-19 | 2018-03-06 | 相補型バックエンドオブライン（ｂｅｏｌ）キャパシタ |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8980708B2 (enExample) |
| EP (1) | EP2959507B1 (enExample) |
| JP (2) | JP2016511941A (enExample) |
| KR (1) | KR20150119232A (enExample) |
| CN (1) | CN105074915B (enExample) |
| WO (1) | WO2014130299A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8980708B2 (en) * | 2013-02-19 | 2015-03-17 | Qualcomm Incorporated | Complementary back end of line (BEOL) capacitor |
| EP3219041B1 (en) | 2014-11-11 | 2020-06-17 | NXP USA, Inc. | Acknowledgment for multiple user communication in a wlan |
| US9837485B2 (en) | 2016-04-05 | 2017-12-05 | International Business Machines Corporation | High-density MIM capacitors |
| KR102523641B1 (ko) | 2016-07-28 | 2023-04-21 | 삼성전자주식회사 | 입력 샘플링 커패시터를 포함하는 비교 회로 및 그것을 포함하는 이미지 센서 |
| US10566414B2 (en) | 2016-09-01 | 2020-02-18 | International Business Machines Corporation | BEOL capacitor through airgap metallization |
| US10643985B2 (en) * | 2017-12-15 | 2020-05-05 | Qualcomm Incorporated | Capacitor array overlapped by on-chip inductor/transformer |
| US11380755B2 (en) | 2017-12-18 | 2022-07-05 | Intel Corporation | Compound capacitor structures |
| KR102587498B1 (ko) | 2018-10-02 | 2023-10-10 | 삼성전자주식회사 | 이미지 센서 |
| US11302773B2 (en) | 2018-10-09 | 2022-04-12 | Qualcomm Incorporated | Back-end-of-line integrated metal-insulator-metal capacitor |
| US10910307B2 (en) | 2018-11-02 | 2021-02-02 | International Business Machines Corporation | Back end of line metallization structure |
| DE112021002165T5 (de) * | 2020-03-30 | 2023-03-23 | Sony Semiconductor Solutions Corporation | Halbleitervorrichtung und elektronische ausrüstung |
| US11688680B2 (en) * | 2020-11-05 | 2023-06-27 | International Business Machines Corporation | MIM capacitor structures |
| US11942467B2 (en) | 2021-06-18 | 2024-03-26 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure, electronic device, and method of manufacturing semiconductor structure |
| US11908738B2 (en) | 2021-10-18 | 2024-02-20 | International Business Machines Corporation | Interconnect including integrally formed capacitor |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63120457A (ja) | 1986-11-08 | 1988-05-24 | Mitsubishi Electric Corp | 半導体装置 |
| US6723600B2 (en) * | 2001-04-18 | 2004-04-20 | International Business Machines Corporation | Method for making a metal-insulator-metal capacitor using plate-through mask techniques |
| DE10217567A1 (de) | 2002-04-19 | 2003-11-13 | Infineon Technologies Ag | Halbleiterbauelement mit integrierter Kapazitätsstruktur und Verfahren zu dessen Herstellung |
| US6830971B2 (en) * | 2002-11-02 | 2004-12-14 | Chartered Semiconductor Manufacturing Ltd | High K artificial lattices for capacitor applications to use in CU or AL BEOL |
| JP2004179419A (ja) * | 2002-11-27 | 2004-06-24 | Toshiba Corp | 半導体装置及びその製造方法 |
| US6680521B1 (en) * | 2003-04-09 | 2004-01-20 | Newport Fab, Llc | High density composite MIM capacitor with reduced voltage dependence in semiconductor dies |
| US6777777B1 (en) * | 2003-05-28 | 2004-08-17 | Newport Fab, Llc | High density composite MIM capacitor with flexible routing in semiconductor dies |
| US7317221B2 (en) | 2003-12-04 | 2008-01-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | High density MIM capacitor structure and fabrication process |
| US6919244B1 (en) * | 2004-03-10 | 2005-07-19 | Motorola, Inc. | Method of making a semiconductor device, and semiconductor device made thereby |
| JP2006049486A (ja) * | 2004-08-03 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US7335956B2 (en) | 2005-02-11 | 2008-02-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Capacitor device with vertically arranged capacitor regions of various kinds |
| US20070102745A1 (en) | 2005-11-04 | 2007-05-10 | Tsun-Lai Hsu | Capacitor structure |
| US8169014B2 (en) | 2006-01-09 | 2012-05-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interdigitated capacitive structure for an integrated circuit |
| US7518850B2 (en) * | 2006-05-18 | 2009-04-14 | International Business Machines Corporation | High yield, high density on-chip capacitor design |
| US7230434B1 (en) | 2006-05-30 | 2007-06-12 | Oki Electric Industry Co., Ltd. | Multi-layered capacitor |
| JP2008235498A (ja) * | 2007-03-20 | 2008-10-02 | Renesas Technology Corp | 半導体装置 |
| US20090014832A1 (en) * | 2007-07-09 | 2009-01-15 | Peter Baumgartner | Semiconductor Device with Reduced Capacitance Tolerance Value |
| US8053865B2 (en) * | 2008-03-10 | 2011-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOM capacitors integrated with air-gaps |
| JP2010040775A (ja) * | 2008-08-05 | 2010-02-18 | Sony Corp | 半導体装置及びその製造方法 |
| JP2010258130A (ja) * | 2009-04-23 | 2010-11-11 | Renesas Electronics Corp | 半導体装置及びそのレイアウト方法 |
| US8558320B2 (en) * | 2009-12-15 | 2013-10-15 | Qualcomm Incorporated | Systems and methods employing a physically asymmetric semiconductor device having symmetrical electrical behavior |
| KR101635828B1 (ko) * | 2010-08-19 | 2016-07-04 | 삼성전자주식회사 | 커패시터 장치 및 그 제조 방법 |
| US8759947B2 (en) | 2012-03-27 | 2014-06-24 | Globalfoundries Singapore Pte. Ltd. | Back-side MOM/MIM devices |
| US8980708B2 (en) * | 2013-02-19 | 2015-03-17 | Qualcomm Incorporated | Complementary back end of line (BEOL) capacitor |
-
2013
- 2013-02-19 US US13/770,127 patent/US8980708B2/en active Active
-
2014
- 2014-02-11 EP EP14707282.1A patent/EP2959507B1/en active Active
- 2014-02-11 JP JP2015558082A patent/JP2016511941A/ja active Pending
- 2014-02-11 WO PCT/US2014/015855 patent/WO2014130299A1/en not_active Ceased
- 2014-02-11 CN CN201480008965.3A patent/CN105074915B/zh not_active Expired - Fee Related
- 2014-02-11 KR KR1020157024981A patent/KR20150119232A/ko not_active Withdrawn
- 2014-10-10 US US14/512,191 patent/US9252104B2/en not_active Expired - Fee Related
-
2018
- 2018-03-06 JP JP2018039621A patent/JP2018093232A/ja active Pending
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