JP2016511941A - 相補型バックエンドオブライン（ｂｅｏｌ）キャパシタ - Google Patents

相補型バックエンドオブライン（ｂｅｏｌ）キャパシタ Download PDF

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Publication number
JP2016511941A
JP2016511941A JP2015558082A JP2015558082A JP2016511941A JP 2016511941 A JP2016511941 A JP 2016511941A JP 2015558082 A JP2015558082 A JP 2015558082A JP 2015558082 A JP2015558082 A JP 2015558082A JP 2016511941 A JP2016511941 A JP 2016511941A
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Japan
Prior art keywords
capacitor
mim
interconnect layer
layer
capacitor structure
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Pending
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JP2015558082A
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Japanese (ja)
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JP2016511941A5 (enExample
Inventor
ジョン・ジェイ・ジュウ
ビン・ヤン
プル・チダムバラム
リシィン・ゲ
ジホン・チェ
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クアルコム，インコーポレイテッド
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Publication of JP2016511941A publication Critical patent/JP2016511941A/ja
Publication of JP2016511941A5 publication Critical patent/JP2016511941A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2015558082A 2013-02-19 2014-02-11 相補型バックエンドオブライン（ｂｅｏｌ）キャパシタ Pending JP2016511941A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/770,127 US8980708B2 (en) 2013-02-19 2013-02-19 Complementary back end of line (BEOL) capacitor
US13/770,127 2013-02-19
PCT/US2014/015855 WO2014130299A1 (en) 2013-02-19 2014-02-11 Complementary back end of line (beol) capacitor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018039621A Division JP2018093232A (ja) 2013-02-19 2018-03-06 相補型バックエンドオブライン（ｂｅｏｌ）キャパシタ

Publications (2)

Publication Number Publication Date
JP2016511941A true JP2016511941A (ja) 2016-04-21
JP2016511941A5 JP2016511941A5 (enExample) 2017-02-23

Family

ID=50189777

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2015558082A Pending JP2016511941A (ja) 2013-02-19 2014-02-11 相補型バックエンドオブライン（ｂｅｏｌ）キャパシタ
JP2018039621A Pending JP2018093232A (ja) 2013-02-19 2018-03-06 相補型バックエンドオブライン（ｂｅｏｌ）キャパシタ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2018039621A Pending JP2018093232A (ja) 2013-02-19 2018-03-06 相補型バックエンドオブライン（ｂｅｏｌ）キャパシタ

Country Status (6)

Country Link
US (2) US8980708B2 (enExample)
EP (1) EP2959507B1 (enExample)
JP (2) JP2016511941A (enExample)
KR (1) KR20150119232A (enExample)
CN (1) CN105074915B (enExample)
WO (1) WO2014130299A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018093232A (ja) * 2013-02-19 2018-06-14 クアルコム，インコーポレイテッド 相補型バックエンドオブライン（ｂｅｏｌ）キャパシタ
JPWO2021199754A1 (enExample) * 2020-03-30 2021-10-07
JP2022075547A (ja) * 2020-11-05 2022-05-18 インターナショナル・ビジネス・マシーンズ・コーポレーション 集積回路構造体および集積回路構造体を製造する方法（ｍｉｍキャパシタ構造体）

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3219041B1 (en) 2014-11-11 2020-06-17 NXP USA, Inc. Acknowledgment for multiple user communication in a wlan
US9837485B2 (en) 2016-04-05 2017-12-05 International Business Machines Corporation High-density MIM capacitors
KR102523641B1 (ko) 2016-07-28 2023-04-21 삼성전자주식회사 입력 샘플링 커패시터를 포함하는 비교 회로 및 그것을 포함하는 이미지 센서
US10566414B2 (en) 2016-09-01 2020-02-18 International Business Machines Corporation BEOL capacitor through airgap metallization
US10643985B2 (en) * 2017-12-15 2020-05-05 Qualcomm Incorporated Capacitor array overlapped by on-chip inductor/transformer
US11380755B2 (en) 2017-12-18 2022-07-05 Intel Corporation Compound capacitor structures
KR102587498B1 (ko) 2018-10-02 2023-10-10 삼성전자주식회사 이미지 센서
US11302773B2 (en) 2018-10-09 2022-04-12 Qualcomm Incorporated Back-end-of-line integrated metal-insulator-metal capacitor
US10910307B2 (en) 2018-11-02 2021-02-02 International Business Machines Corporation Back end of line metallization structure
US11942467B2 (en) 2021-06-18 2024-03-26 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure, electronic device, and method of manufacturing semiconductor structure
US11908738B2 (en) 2021-10-18 2024-02-20 International Business Machines Corporation Interconnect including integrally formed capacitor

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004179419A (ja) * 2002-11-27 2004-06-24 Toshiba Corp 半導体装置及びその製造方法
US6777777B1 (en) * 2003-05-28 2004-08-17 Newport Fab, Llc High density composite MIM capacitor with flexible routing in semiconductor dies
JP2006049486A (ja) * 2004-08-03 2006-02-16 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2006522464A (ja) * 2003-04-09 2006-09-28 ニューポート・ファブ・リミテッド・ライアビリティ・カンパニー・ドゥーイング・ビジネス・アズ・ジャズ・セミコンダクター 半導体ダイにおける、電圧依存性が低減した高密度複合ｍｉｍキャパシタ
US7230434B1 (en) * 2006-05-30 2007-06-12 Oki Electric Industry Co., Ltd. Multi-layered capacitor
JP2008235498A (ja) * 2007-03-20 2008-10-02 Renesas Technology Corp 半導体装置
US20090014832A1 (en) * 2007-07-09 2009-01-15 Peter Baumgartner Semiconductor Device with Reduced Capacitance Tolerance Value
JP2009537972A (ja) * 2006-05-18 2009-10-29 インターナショナル・ビジネス・マシーンズ・コーポレーション 高収率の高密度オンチップ・キャパシタ設計
JP2010040775A (ja) * 2008-08-05 2010-02-18 Sony Corp 半導体装置及びその製造方法
JP2010258130A (ja) * 2009-04-23 2010-11-11 Renesas Electronics Corp 半導体装置及びそのレイアウト方法
US20110140288A1 (en) * 2009-12-15 2011-06-16 Qualcomm Incorporated Systems and Methods Employing a Physically Asymmetric Semiconductor Device Having Symmetrical Electrical Behavior
JP2012044178A (ja) * 2010-08-19 2012-03-01 Samsung Electronics Co Ltd キャパシタ装置及びその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63120457A (ja) 1986-11-08 1988-05-24 Mitsubishi Electric Corp 半導体装置
US6723600B2 (en) * 2001-04-18 2004-04-20 International Business Machines Corporation Method for making a metal-insulator-metal capacitor using plate-through mask techniques
DE10217567A1 (de) 2002-04-19 2003-11-13 Infineon Technologies Ag Halbleiterbauelement mit integrierter Kapazitätsstruktur und Verfahren zu dessen Herstellung
US6830971B2 (en) * 2002-11-02 2004-12-14 Chartered Semiconductor Manufacturing Ltd High K artificial lattices for capacitor applications to use in CU or AL BEOL
US7317221B2 (en) 2003-12-04 2008-01-08 Taiwan Semiconductor Manufacturing Co., Ltd. High density MIM capacitor structure and fabrication process
US6919244B1 (en) * 2004-03-10 2005-07-19 Motorola, Inc. Method of making a semiconductor device, and semiconductor device made thereby
US7335956B2 (en) 2005-02-11 2008-02-26 Taiwan Semiconductor Manufacturing Co., Ltd. Capacitor device with vertically arranged capacitor regions of various kinds
US20070102745A1 (en) 2005-11-04 2007-05-10 Tsun-Lai Hsu Capacitor structure
US8169014B2 (en) 2006-01-09 2012-05-01 Taiwan Semiconductor Manufacturing Co., Ltd. Interdigitated capacitive structure for an integrated circuit
US8053865B2 (en) * 2008-03-10 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. MOM capacitors integrated with air-gaps
US8759947B2 (en) 2012-03-27 2014-06-24 Globalfoundries Singapore Pte. Ltd. Back-side MOM/MIM devices
US8980708B2 (en) * 2013-02-19 2015-03-17 Qualcomm Incorporated Complementary back end of line (BEOL) capacitor

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004179419A (ja) * 2002-11-27 2004-06-24 Toshiba Corp 半導体装置及びその製造方法
JP2006522464A (ja) * 2003-04-09 2006-09-28 ニューポート・ファブ・リミテッド・ライアビリティ・カンパニー・ドゥーイング・ビジネス・アズ・ジャズ・セミコンダクター 半導体ダイにおける、電圧依存性が低減した高密度複合ｍｉｍキャパシタ
US6777777B1 (en) * 2003-05-28 2004-08-17 Newport Fab, Llc High density composite MIM capacitor with flexible routing in semiconductor dies
JP2006049486A (ja) * 2004-08-03 2006-02-16 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2009537972A (ja) * 2006-05-18 2009-10-29 インターナショナル・ビジネス・マシーンズ・コーポレーション 高収率の高密度オンチップ・キャパシタ設計
US7230434B1 (en) * 2006-05-30 2007-06-12 Oki Electric Industry Co., Ltd. Multi-layered capacitor
JP2008235498A (ja) * 2007-03-20 2008-10-02 Renesas Technology Corp 半導体装置
US20090014832A1 (en) * 2007-07-09 2009-01-15 Peter Baumgartner Semiconductor Device with Reduced Capacitance Tolerance Value
JP2010040775A (ja) * 2008-08-05 2010-02-18 Sony Corp 半導体装置及びその製造方法
JP2010258130A (ja) * 2009-04-23 2010-11-11 Renesas Electronics Corp 半導体装置及びそのレイアウト方法
US20110140288A1 (en) * 2009-12-15 2011-06-16 Qualcomm Incorporated Systems and Methods Employing a Physically Asymmetric Semiconductor Device Having Symmetrical Electrical Behavior
JP2012044178A (ja) * 2010-08-19 2012-03-01 Samsung Electronics Co Ltd キャパシタ装置及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018093232A (ja) * 2013-02-19 2018-06-14 クアルコム，インコーポレイテッド 相補型バックエンドオブライン（ｂｅｏｌ）キャパシタ
JPWO2021199754A1 (enExample) * 2020-03-30 2021-10-07
WO2021199754A1 (ja) * 2020-03-30 2021-10-07 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び電子機器
US12170303B2 (en) 2020-03-30 2024-12-17 Sony Semiconductor Solutions Corporation Semiconductor device and electronic equipment
JP7645240B2 (ja) 2020-03-30 2025-03-13 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び電子機器
JP2022075547A (ja) * 2020-11-05 2022-05-18 インターナショナル・ビジネス・マシーンズ・コーポレーション 集積回路構造体および集積回路構造体を製造する方法（ｍｉｍキャパシタ構造体）
JP7643807B2 (ja) 2020-11-05 2025-03-11 インターナショナル・ビジネス・マシーンズ・コーポレーション 集積回路構造体および集積回路構造体を製造する方法（ｍｉｍキャパシタ構造体）

Also Published As

Publication number Publication date
US20150028452A1 (en) 2015-01-29
KR20150119232A (ko) 2015-10-23
US9252104B2 (en) 2016-02-02
CN105074915A (zh) 2015-11-18
CN105074915B (zh) 2018-03-30
EP2959507A1 (en) 2015-12-30
US8980708B2 (en) 2015-03-17
US20140231957A1 (en) 2014-08-21
WO2014130299A1 (en) 2014-08-28
JP2018093232A (ja) 2018-06-14
EP2959507B1 (en) 2019-07-03

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