JP2013532377A5 - - Google Patents

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Publication number
JP2013532377A5
JP2013532377A5 JP2013513277A JP2013513277A JP2013532377A5 JP 2013532377 A5 JP2013532377 A5 JP 2013532377A5 JP 2013513277 A JP2013513277 A JP 2013513277A JP 2013513277 A JP2013513277 A JP 2013513277A JP 2013532377 A5 JP2013532377 A5 JP 2013532377A5
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JP
Japan
Prior art keywords
inductor
signal
inductors
circuit
passing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013513277A
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English (en)
Japanese (ja)
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JP2013532377A (ja
JP5512885B2 (ja
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Publication date
Priority claimed from US12/791,023 external-priority patent/US8384507B2/en
Application filed filed Critical
Publication of JP2013532377A publication Critical patent/JP2013532377A/ja
Publication of JP2013532377A5 publication Critical patent/JP2013532377A5/ja
Application granted granted Critical
Publication of JP5512885B2 publication Critical patent/JP5512885B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013513277A 2010-06-01 2011-05-31 プログラマビリティを伴う高抵抗基板での貫通ビアのインダクタまたはトランス Expired - Fee Related JP5512885B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/791,023 2010-06-01
US12/791,023 US8384507B2 (en) 2010-06-01 2010-06-01 Through via inductor or transformer in a high-resistance substrate with programmability
PCT/US2011/038604 WO2011153162A1 (en) 2010-06-01 2011-05-31 Through via inductor or transformer in a high-resistance substrate with programmability

Publications (3)

Publication Number Publication Date
JP2013532377A JP2013532377A (ja) 2013-08-15
JP2013532377A5 true JP2013532377A5 (enExample) 2014-03-20
JP5512885B2 JP5512885B2 (ja) 2014-06-04

Family

ID=44584721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013513277A Expired - Fee Related JP5512885B2 (ja) 2010-06-01 2011-05-31 プログラマビリティを伴う高抵抗基板での貫通ビアのインダクタまたはトランス

Country Status (7)

Country Link
US (2) US8384507B2 (enExample)
EP (2) EP2577688B1 (enExample)
JP (1) JP5512885B2 (enExample)
KR (1) KR101433267B1 (enExample)
CN (1) CN102918608B (enExample)
TW (1) TW201214474A (enExample)
WO (1) WO2011153162A1 (enExample)

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US10008316B2 (en) * 2014-03-28 2018-06-26 Qualcomm Incorporated Inductor embedded in a package substrate
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US9906318B2 (en) 2014-04-18 2018-02-27 Qualcomm Incorporated Frequency multiplexer
US9478348B2 (en) * 2014-06-24 2016-10-25 Qualcomm Incorporated Vertical spiral inductor
US10050528B2 (en) * 2015-06-29 2018-08-14 Infineon Technologies Austria Ag Current distribution in DC-DC converters
US9911723B2 (en) * 2015-12-18 2018-03-06 Intel Corporation Magnetic small footprint inductor array module for on-package voltage regulator
KR20180052384A (ko) * 2016-11-10 2018-05-18 삼성전기주식회사 인덕터 및 그 제조방법
CN109755224B (zh) * 2018-11-27 2020-08-21 西安电子科技大学 一种基于硅通孔的紧凑嵌套电感结构及其制备方法
JP7351113B2 (ja) * 2019-06-28 2023-09-27 凸版印刷株式会社 ガラスコア多層配線基板
CN110556351A (zh) * 2019-09-16 2019-12-10 西安电子科技大学昆山创新研究院 一种基于硅通孔的分支耦合器
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