JP2015233035A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2015233035A JP2015233035A JP2014118492A JP2014118492A JP2015233035A JP 2015233035 A JP2015233035 A JP 2015233035A JP 2014118492 A JP2014118492 A JP 2014118492A JP 2014118492 A JP2014118492 A JP 2014118492A JP 2015233035 A JP2015233035 A JP 2015233035A
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- Prior art keywords
- insulating film
- metal film
- solder
- film
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims abstract description 67
- 229910000679 solder Inorganic materials 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000011347 resin Substances 0.000 claims abstract description 20
- 229920005989 resin Polymers 0.000 claims abstract description 20
- 238000007789 sealing Methods 0.000 claims abstract description 19
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 121
- 239000010409 thin film Substances 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000010949 copper Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
【解決手段】半導体装置1は、半導体基板10と、半導体基板10の表面に形成された電極30と、電極30の表面に形成された絶縁膜20とを備えている。半導体装置1は、絶縁膜20に覆われていない範囲の電極30の表面から絶縁膜20の表面に跨って形成された金属膜40を備えている。半導体装置1は、金属膜40の表面に形成されたはんだ80と、はんだ80を介して金属膜40に接合されたリードフレーム50と、絶縁膜20、金属膜40、およびはんだ80を封止する封止樹脂60とを備えている。絶縁膜20の表面には、凸部70が形成されている。金属膜40が、凸部70を覆っている。はんだ80が、凸部70を覆っている金属膜40を覆っている。
【選択図】図3
Description
10;半導体基板
20;絶縁膜
21;内側端部
22;外側端部
30;電極
40;金属膜
42;外側端部
50;リードフレーム
60;封止樹脂
70;凸部
71;境界面
72;凹部
80;はんだ
82;外側端部
91;薄膜
92;レジスト
94;レジスト
Claims (2)
- 半導体基板を含む基板と、
前記基板の表面に形成された絶縁膜と、
前記絶縁膜に覆われていない前記基板の表面から前記絶縁膜の表面に跨って形成された金属膜と、
前記金属膜の表面に形成されたはんだと、
前記はんだを介して前記金属膜に接合されたリードフレームと、
前記絶縁膜、前記金属膜、および前記はんだを封止する封止樹脂と、を備え、
前記絶縁膜の表面に凸部が形成され、
前記金属膜が、前記凸部を覆っており、
前記はんだが、前記凸部を覆っている前記金属膜を覆っている、半導体装置。 - 前記絶縁膜は、ポリイミドから形成されており、
前記凸部は、前記絶縁膜の角部に形成されている、請求項1に記載の半導体装置。
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JP2018014414A (ja) * | 2016-07-21 | 2018-01-25 | トヨタ自動車株式会社 | 半導体装置 |
JP2018129485A (ja) * | 2017-02-10 | 2018-08-16 | トヨタ自動車株式会社 | 半導体装置 |
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