JP6316508B2 - 半導体モジュールおよびその製造方法 - Google Patents
半導体モジュールおよびその製造方法 Download PDFInfo
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- JP6316508B2 JP6316508B2 JP2017533978A JP2017533978A JP6316508B2 JP 6316508 B2 JP6316508 B2 JP 6316508B2 JP 2017533978 A JP2017533978 A JP 2017533978A JP 2017533978 A JP2017533978 A JP 2017533978A JP 6316508 B2 JP6316508 B2 JP 6316508B2
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- semiconductor module
- sealing member
- surface electrode
- module according
- recess
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- 238000009751 slip forming Methods 0.000 description 1
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- 229920001187 thermosetting polymer Polymers 0.000 description 1
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Description
以下に、第1の実施形態に係る半導体モジュールの構造について説明する。
第1の実施形態に係る半導体モジュールの製造工程は、接合工程S1と、第1封止工程S2と、第2封止工程S3とを有している。
表面電極22とボンディングワイヤ3との接合部31には、ボンディングワイヤ3と半導体素子2の熱膨張係数の差により、繰り返し熱応力が発生する。接合部31の外周32においては、ボンディングワイヤ3と表面電極22により、切欠き形状が形成される場合がある。このような切欠き形状は、応力が集中する箇所となりやすい。そのため、この熱応力は、接合部31の外周32に集中しやすい。
以下に、第2の実施形態に係る半導体モジュールの構造について説明する。なお、ここでは、第1の実施形態と異なる点について主に説明する。
第2の実施形態に係る半導体モジュールの製造方法は、第1の実施形態に係る半導体モジュールの製造方法と同様に、接合工程S1と、第1封止工程S2と、第2封止工程S3とを有している。これらに加え、第2の実施形態に係る半導体モジュールの製造方法は、くぼみ形成工程S4をさらに有している。
上記のとおり、表面電極22とボンディングワイヤ3との接合部31には、ボンディングワイヤ3と半導体素子2の熱膨張係数の差により、繰り返し熱応力が発生する。この熱応力は、接合部31の外周32に応力集中しやすい。そのため、このような繰り返し熱応力により、第1の封止部材4の端部から接合部31の外周32に向かって、第1の封止部材4と表面電極22の界面に沿って、剥がれが進展する場合がある。
以下に、第3の実施形態に係る半導体モジュールの構造について説明する。なお、ここでは、第2の実施形態と異なる点について主に説明する。
第3の実施形態に係る半導体モジュールの製造工程は、第2の実施形態に係る半導体モジュールの製造工程と同様に、接合工程S1と、第1封止工程S2と、第2封止工程S3と、くぼみ形成工程S4とを有している。しかし、第4の実施形態に係る半導体モジュールの製造工程は、くぼみ形成工程S4が第3の実施形態に係る半導体モジュールの製造工程と異なっているため、以下この点について説明する。
上記のとおり、表面電極22とボンディングワイヤ3との接合部31に発生した繰り返し熱応力により、第1の封止部材4の端部から接合部31の外周32に向かって、第1の封止部材4と表面電極22の界面に沿って、剥がれが進展する場合がある。
Claims (11)
- 表面電極を有する半導体素子と、
前記表面電極に接合されている接合部を有するボンディングワイヤと、
前記接合部の外周で前記ボンディングワイヤと前記表面電極との間に充填され、第1の弾性率を有する第1の封止部材と、
前記第1の封止部材を覆い、前記表面電極と接し、第2の弾性率を有する第2の封止部材とを備え、
前記第1の弾性率は、前記第2の弾性率よりも高く、
前記表面電極は、前記接合部の周囲にくぼみを有しており、
前記くぼみは、前記接合部から離間して形成されており、
前記くぼみには、前記第1の封止部材が充填されている、半導体モジュール。 - 前記くぼみは、平面視において前記接合部を取り囲むように形成されている、請求項1記載の半導体モジュール。
- 前記くぼみは、連続的に形成されている、請求項2記載の半導体モジュール。
- 前記くぼみは、開口と側面と底とを有しており、平面視において、前記底または前記側面の少なくとも一部は、前記開口よりも前記接合部から離れた位置にある、請求項1記載の半導体モジュール。
- 前記第1の封止部材の電気伝導率は前記第2の封止部材の電気伝導率よりも高い、請求項1記載の半導体モジュール。
- 前記第1の封止部材の絶縁破壊強さは前記第2の封止部材の絶縁破壊強さよりも低い、請求項1記載の半導体モジュール。
- 前記第1の弾性率は、70GPa以上である、請求項1記載の半導体モジュール。
- 前記第2の弾性率は、30GPa以下である、請求項1記載の半導体モジュール。
- 半導体素子の表面電極にボンディングワイヤを接合し、接合部を形成する工程と、
前記接合部の外周で前記ボンディングワイヤと前記表面電極との間に、第1の弾性率を有する第1の封止部材を充填する工程と、
前記第1の封止部材を、前記表面電極と接するように、第2の弾性率を有する第2の封止部材により覆う工程と、
前記接合部の周囲にくぼみを形成する工程とを備え、
前記くぼみは、前記接合部から離間して形成されており、
前記第1の弾性率は、前記第2の弾性率よりも高い、半導体モジュールの製造方法。 - 前記くぼみは、前記表面電極に対してレーザ光を照射することにより形成されている、請求項9記載の半導体モジュールの製造方法。
- 前記くぼみは、開口部と底部を有しており、
前記底部は、平面視において、前記開口部よりも前記接合部から離れた位置にあり、
前記レーザ光は、前記表面電極に対して傾けて照射される、請求項9記載の半導体モジュールの製造方法。
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US20220336402A1 (en) * | 2019-12-04 | 2022-10-20 | Mitsubishi Electric Corporation | Semiconductor device, power conversion device, and method for manufacturing semiconductor device |
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