JP2015216350A5 - - Google Patents
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- Publication number
- JP2015216350A5 JP2015216350A5 JP2014256186A JP2014256186A JP2015216350A5 JP 2015216350 A5 JP2015216350 A5 JP 2015216350A5 JP 2014256186 A JP2014256186 A JP 2014256186A JP 2014256186 A JP2014256186 A JP 2014256186A JP 2015216350 A5 JP2015216350 A5 JP 2015216350A5
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- semiconductor element
- semiconductor
- bump
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 57
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 10
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical group [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 4
- 150000004767 nitrides Chemical class 0.000 claims 2
- 238000002161 passivation Methods 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 238000010587 phase diagram Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014256186A JP6424610B2 (ja) | 2014-04-23 | 2014-12-18 | 半導体装置、および製造方法 |
| CN201811352193.1A CN109637992B (zh) | 2014-04-23 | 2015-04-15 | 半导体装置及其制造方法 |
| KR1020167021519A KR102370046B1 (ko) | 2014-04-23 | 2015-04-15 | 반도체 장치 및 그 제조 방법 |
| KR1020237005687A KR102619737B1 (ko) | 2014-04-23 | 2015-04-15 | 반도체 장치 및 그 제조 방법 |
| US15/118,575 US10600838B2 (en) | 2014-04-23 | 2015-04-15 | Semiconductor device and method of manufacturing thereof |
| CN201580006909.0A CN105981160B (zh) | 2014-04-23 | 2015-04-15 | 半导体装置及其制造方法 |
| PCT/JP2015/002071 WO2015162872A1 (en) | 2014-04-23 | 2015-04-15 | Semiconductor device and method of manufacturing thereof |
| KR1020227006069A KR20220030314A (ko) | 2014-04-23 | 2015-04-15 | 반도체 장치 및 그 제조 방법 |
| TW104112256A TWI697074B (zh) | 2014-04-23 | 2015-04-16 | 半導體裝置及其製造方法 |
| US16/503,062 US11476291B2 (en) | 2014-04-23 | 2019-07-03 | Semiconductor device and method of manufacturing thereof |
| US17/939,796 US20230005979A1 (en) | 2014-04-23 | 2022-09-07 | Semiconductor device and method of manufacturing thereof |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014088804 | 2014-04-23 | ||
| JP2014088804 | 2014-04-23 | ||
| JP2014256186A JP6424610B2 (ja) | 2014-04-23 | 2014-12-18 | 半導体装置、および製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018198181A Division JP6645555B2 (ja) | 2014-04-23 | 2018-10-22 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015216350A JP2015216350A (ja) | 2015-12-03 |
| JP2015216350A5 true JP2015216350A5 (enExample) | 2017-03-23 |
| JP6424610B2 JP6424610B2 (ja) | 2018-11-21 |
Family
ID=53015851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014256186A Active JP6424610B2 (ja) | 2014-04-23 | 2014-12-18 | 半導体装置、および製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US10600838B2 (enExample) |
| JP (1) | JP6424610B2 (enExample) |
| KR (3) | KR102619737B1 (enExample) |
| CN (2) | CN105981160B (enExample) |
| TW (1) | TWI697074B (enExample) |
| WO (1) | WO2015162872A1 (enExample) |
Families Citing this family (17)
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| US9240376B2 (en) * | 2013-08-16 | 2016-01-19 | Globalfoundries Inc. | Self-aligned via fuse |
| JP6424610B2 (ja) * | 2014-04-23 | 2018-11-21 | ソニー株式会社 | 半導体装置、および製造方法 |
| US9564418B2 (en) | 2014-10-08 | 2017-02-07 | Micron Technology, Inc. | Interconnect structures with intermetallic palladium joints and associated systems and methods |
| KR102720747B1 (ko) * | 2015-03-12 | 2024-10-23 | 소니그룹주식회사 | 촬상 장치, 제조 방법 및 전자 기기 |
| US9812555B2 (en) * | 2015-05-28 | 2017-11-07 | Semiconductor Components Industries, Llc | Bottom-gate thin-body transistors for stacked wafer integrated circuits |
| WO2017061273A1 (ja) * | 2015-10-05 | 2017-04-13 | ソニー株式会社 | 撮像装置、製造方法 |
| CN106057692B (zh) * | 2016-05-26 | 2018-08-21 | 河南工业大学 | 一种三维集成电路堆栈集成方法及三维集成电路 |
| WO2018096917A1 (ja) * | 2016-11-22 | 2018-05-31 | 千住金属工業株式会社 | はんだ付け方法 |
| JP6685470B2 (ja) * | 2017-03-30 | 2020-04-22 | 三菱電機株式会社 | 半導体装置およびその製造方法、ならびに電力変換装置 |
| KR102380823B1 (ko) | 2017-08-16 | 2022-04-01 | 삼성전자주식회사 | 발열체를 포함하는 칩 구조체 |
| WO2019066977A1 (en) | 2017-09-29 | 2019-04-04 | Intel Corporation | FIRST-LEVEL THIN-LEVEL INTERCONNECTIONS DEFINED BY AUTOCATALYTIC METAL FOR LITHOGRAPHIC INTERCONNECTION HOLES |
| CN110660809B (zh) * | 2018-06-28 | 2023-06-16 | 西部数据技术公司 | 包含分支存储器裸芯模块的垂直互连的半导体装置 |
| US10622321B2 (en) * | 2018-05-30 | 2020-04-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structures and methods of forming the same |
| KR102830541B1 (ko) | 2020-09-23 | 2025-07-07 | 삼성전자주식회사 | 반도체 칩의 접속 구조물 및 접속 구조물을 포함하는 반도체 패키지 |
| US11824037B2 (en) * | 2020-12-31 | 2023-11-21 | International Business Machines Corporation | Assembly of a chip to a substrate |
| US20230135057A1 (en) * | 2021-10-28 | 2023-05-04 | Skyworks Solutions, Inc. | Dual sided molded package with varying interconnect pad sizes and uniform exposed solderable area |
| US20250192099A1 (en) * | 2023-12-06 | 2025-06-12 | Qualcomm Incorporated | Integrated circuit(ic) package having a substrate employing reduced area, added metal pad(s) to metal interconnect(s) to reduce die-substrate clearance |
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|---|---|---|---|---|
| US4617730A (en) * | 1984-08-13 | 1986-10-21 | International Business Machines Corporation | Method of fabricating a chip interposer |
| JPH06232209A (ja) * | 1993-02-02 | 1994-08-19 | Toshiba Corp | 半導体装置の製造方法 |
| US5903058A (en) * | 1996-07-17 | 1999-05-11 | Micron Technology, Inc. | Conductive bumps on die for flip chip application |
| US6218302B1 (en) * | 1998-07-21 | 2001-04-17 | Motorola Inc. | Method for forming a semiconductor device |
| JP3413120B2 (ja) | 1999-02-23 | 2003-06-03 | ローム株式会社 | チップ・オン・チップ構造の半導体装置 |
| US6092714A (en) * | 1999-03-16 | 2000-07-25 | Mcms, Inc. | Method of utilizing a plasma gas mixture containing argon and CF4 to clean and coat a conductor |
| JP3365495B2 (ja) * | 1999-06-30 | 2003-01-14 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US7388289B1 (en) * | 1999-09-02 | 2008-06-17 | Micron Technology, Inc. | Local multilayered metallization |
| JP4979154B2 (ja) * | 2000-06-07 | 2012-07-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US20020086520A1 (en) * | 2001-01-02 | 2002-07-04 | Advanced Semiconductor Engineering Inc. | Semiconductor device having bump electrode |
| US6815324B2 (en) * | 2001-02-15 | 2004-11-09 | Megic Corporation | Reliable metal bumps on top of I/O pads after removal of test probe marks |
| JP2003037126A (ja) * | 2001-07-24 | 2003-02-07 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2003142485A (ja) * | 2001-11-01 | 2003-05-16 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US6661098B2 (en) | 2002-01-18 | 2003-12-09 | International Business Machines Corporation | High density area array solder microjoining interconnect structure and fabrication method |
| US6878633B2 (en) * | 2002-12-23 | 2005-04-12 | Freescale Semiconductor, Inc. | Flip-chip structure and method for high quality inductors and transformers |
| US7427557B2 (en) * | 2004-03-10 | 2008-09-23 | Unitive International Limited | Methods of forming bumps using barrier layers as etch masks |
| JP4882229B2 (ja) | 2004-09-08 | 2012-02-22 | 株式会社デンソー | 半導体装置およびその製造方法 |
| US7741714B2 (en) * | 2004-11-02 | 2010-06-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bond pad structure with stress-buffering layer capping interconnection metal layer |
| JP4390206B2 (ja) | 2004-11-05 | 2009-12-24 | 熊本製粉株式会社 | 食品組成物の製造方法、及び食品組成物 |
| EP1732116B1 (en) | 2005-06-08 | 2017-02-01 | Imec | Methods for bonding and micro-electronic devices produced according to such methods |
| JP2006351766A (ja) * | 2005-06-15 | 2006-12-28 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| JP4384195B2 (ja) * | 2007-03-22 | 2009-12-16 | 株式会社東芝 | 半導体装置の製造方法 |
| US8022543B2 (en) * | 2008-03-25 | 2011-09-20 | International Business Machines Corporation | Underbump metallurgy for enhanced electromigration resistance |
| JP5324121B2 (ja) * | 2008-04-07 | 2013-10-23 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP5033192B2 (ja) * | 2008-09-30 | 2012-09-26 | イビデン株式会社 | 多層プリント配線板、及び、多層プリント配線板の製造方法 |
| US8227295B2 (en) * | 2008-10-16 | 2012-07-24 | Texas Instruments Incorporated | IC die having TSV and wafer level underfill and stacked IC devices comprising a workpiece solder connected to the TSV |
| JP5120342B2 (ja) * | 2009-06-18 | 2013-01-16 | ソニー株式会社 | 半導体パッケージの製造方法 |
| US8183765B2 (en) * | 2009-08-24 | 2012-05-22 | Global Oled Technology Llc | Controlling an electronic device using chiplets |
| KR101652386B1 (ko) * | 2009-10-01 | 2016-09-12 | 삼성전자주식회사 | 집적회로 칩 및 이의 제조방법과 집적회로 칩을 구비하는 플립 칩 패키지 및 이의 제조방법 |
| TWI395279B (zh) * | 2009-12-30 | 2013-05-01 | 財團法人工業技術研究院 | 微凸塊結構 |
| US9018758B2 (en) * | 2010-06-02 | 2015-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with non-metal sidewall spacer and metal top cap |
| US8581418B2 (en) * | 2010-07-21 | 2013-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-die stacking using bumps with different sizes |
| CN101969063B (zh) * | 2010-08-27 | 2012-07-25 | 友达光电股份有限公司 | 像素阵列基板、导电结构以及显示面板 |
| JP2012059738A (ja) | 2010-09-03 | 2012-03-22 | Toshiba Corp | 半導体装置 |
| US8698269B2 (en) * | 2011-02-28 | 2014-04-15 | Ibiden Co., Ltd. | Wiring board with built-in imaging device and method for manufacturing same |
| US8710612B2 (en) | 2011-05-20 | 2014-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having a bonding pad and shield structure of different thickness |
| US8531035B2 (en) * | 2011-07-01 | 2013-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect barrier structure and method |
| US8963334B2 (en) * | 2011-08-30 | 2015-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Die-to-die gap control for semiconductor structure and method |
| US8779539B2 (en) * | 2011-09-21 | 2014-07-15 | United Microelectronics Corporation | Image sensor and method for fabricating the same |
| JP2013110338A (ja) * | 2011-11-24 | 2013-06-06 | Renesas Electronics Corp | 半導体集積回路装置 |
| US8642384B2 (en) * | 2012-03-09 | 2014-02-04 | Stats Chippac, Ltd. | Semiconductor device and method of forming non-linear interconnect layer with extended length for joint reliability |
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| US8629524B2 (en) * | 2012-04-27 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for vertically integrated backside illuminated image sensors |
| US9082776B2 (en) * | 2012-08-24 | 2015-07-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package having protective layer with curved surface and method of manufacturing same |
| JPWO2014033977A1 (ja) * | 2012-08-29 | 2016-08-08 | パナソニックIpマネジメント株式会社 | 半導体装置 |
| US8796805B2 (en) * | 2012-09-05 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple metal film stack in BSI chips |
| US9425221B2 (en) * | 2014-01-31 | 2016-08-23 | Sharp Laboratories Of America, Inc. | Circuit-on-wire |
| JP6424610B2 (ja) * | 2014-04-23 | 2018-11-21 | ソニー株式会社 | 半導体装置、および製造方法 |
| JP6639188B2 (ja) * | 2015-10-21 | 2020-02-05 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、および製造方法 |
-
2014
- 2014-12-18 JP JP2014256186A patent/JP6424610B2/ja active Active
-
2015
- 2015-04-15 KR KR1020237005687A patent/KR102619737B1/ko active Active
- 2015-04-15 KR KR1020227006069A patent/KR20220030314A/ko not_active Ceased
- 2015-04-15 CN CN201580006909.0A patent/CN105981160B/zh not_active Expired - Fee Related
- 2015-04-15 CN CN201811352193.1A patent/CN109637992B/zh active Active
- 2015-04-15 WO PCT/JP2015/002071 patent/WO2015162872A1/en not_active Ceased
- 2015-04-15 US US15/118,575 patent/US10600838B2/en active Active
- 2015-04-15 KR KR1020167021519A patent/KR102370046B1/ko active Active
- 2015-04-16 TW TW104112256A patent/TWI697074B/zh not_active IP Right Cessation
-
2019
- 2019-07-03 US US16/503,062 patent/US11476291B2/en active Active
-
2022
- 2022-09-07 US US17/939,796 patent/US20230005979A1/en not_active Abandoned
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