JP2016213238A5 - - Google Patents

Download PDF

Info

Publication number
JP2016213238A5
JP2016213238A5 JP2015093059A JP2015093059A JP2016213238A5 JP 2016213238 A5 JP2016213238 A5 JP 2016213238A5 JP 2015093059 A JP2015093059 A JP 2015093059A JP 2015093059 A JP2015093059 A JP 2015093059A JP 2016213238 A5 JP2016213238 A5 JP 2016213238A5
Authority
JP
Japan
Prior art keywords
semiconductor device
barrier layer
film
layer
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015093059A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016213238A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2015093059A priority Critical patent/JP2016213238A/ja
Priority claimed from JP2015093059A external-priority patent/JP2016213238A/ja
Priority to US15/098,138 priority patent/US9818709B2/en
Publication of JP2016213238A publication Critical patent/JP2016213238A/ja
Priority to US15/729,127 priority patent/US10008466B2/en
Publication of JP2016213238A5 publication Critical patent/JP2016213238A5/ja
Pending legal-status Critical Current

Links

JP2015093059A 2015-04-30 2015-04-30 半導体装置および半導体装置の製造方法 Pending JP2016213238A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015093059A JP2016213238A (ja) 2015-04-30 2015-04-30 半導体装置および半導体装置の製造方法
US15/098,138 US9818709B2 (en) 2015-04-30 2016-04-13 Semiconductor device and manufacturing method thereof
US15/729,127 US10008466B2 (en) 2015-04-30 2017-10-10 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015093059A JP2016213238A (ja) 2015-04-30 2015-04-30 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2016213238A JP2016213238A (ja) 2016-12-15
JP2016213238A5 true JP2016213238A5 (enExample) 2018-01-11

Family

ID=57205074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015093059A Pending JP2016213238A (ja) 2015-04-30 2015-04-30 半導体装置および半導体装置の製造方法

Country Status (2)

Country Link
US (2) US9818709B2 (enExample)
JP (1) JP2016213238A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10636759B2 (en) 2017-01-31 2020-04-28 Globalfoundries Inc. Methods of forming integrated circuit structure for joining wafers and resulting structure
US10103119B2 (en) * 2017-01-31 2018-10-16 Globalfoundries Inc. Methods of forming integrated circuit structure for joining wafers and resulting structure
US11444048B2 (en) 2017-10-05 2022-09-13 Texas Instruments Incorporated Shaped interconnect bumps in semiconductor devices
CN111384017B (zh) * 2018-12-29 2022-10-11 颀中科技（苏州）有限公司 倒装芯片组件、倒装芯片封装结构及制备方法
JP7319808B2 (ja) * 2019-03-29 2023-08-02 ローム株式会社 半導体装置および半導体パッケージ
US10943880B2 (en) * 2019-05-16 2021-03-09 Advanced Micro Devices, Inc. Semiconductor chip with reduced pitch conductive pillars
JP2021090012A (ja) * 2019-12-05 2021-06-10 新光電気工業株式会社 銅ピラーバンプ、半導体チップ、半導体装置
JP7414563B2 (ja) * 2020-02-04 2024-01-16 ラピスセミコンダクタ株式会社 半導体装置
US11694982B2 (en) * 2021-02-25 2023-07-04 Qualcomm Incorporated Sidewall wetting barrier for conductive pillars

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740577B2 (en) * 2002-05-21 2004-05-25 St Assembly Test Services Pte Ltd Method of forming a small pitch torch bump for mounting high-performance flip-flop devices
JP2006245289A (ja) * 2005-03-03 2006-09-14 Casio Micronics Co Ltd 半導体装置及び実装構造体
US8492891B2 (en) * 2010-04-22 2013-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Cu pillar bump with electrolytic metal sidewall protection
US8241963B2 (en) * 2010-07-13 2012-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Recessed pillar structure
JP2012069704A (ja) 2010-09-22 2012-04-05 Toshiba Corp 半導体装置及びその製造方法
JP2012080043A (ja) * 2010-10-06 2012-04-19 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
US8242011B2 (en) * 2011-01-11 2012-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming metal pillar
JP5798939B2 (ja) * 2012-01-25 2015-10-21 富士フイルム株式会社 エッチング方法、およびこれに用いられるエッチング液
JP2013187353A (ja) 2012-03-08 2013-09-19 Renesas Electronics Corp 電子装置および電子装置の製造方法
US9472521B2 (en) * 2012-05-30 2016-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Scheme for connector site spacing and resulting structures
JP2014116367A (ja) * 2012-12-06 2014-06-26 Fujitsu Ltd 電子部品、電子装置の製造方法及び電子装置
JP2014179364A (ja) 2013-03-13 2014-09-25 Ps4 Luxco S A R L 半導体チップ及びこれを備える半導体装置

Similar Documents

Publication Publication Date Title
JP2016213238A5 (enExample)
US10790252B2 (en) Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices
KR102591618B1 (ko) 반도체 패키지 및 반도체 패키지의 제조 방법
US9978657B2 (en) Semiconductor package device and manufacturing method thereof
JP2010238702A5 (enExample)
JP2014154800A5 (enExample)
CN103996630A (zh) 封装半导体器件和封装器件及方法
US10008466B2 (en) Semiconductor device and manufacturing method thereof
JP2015026722A5 (enExample)
US20150069605A1 (en) Semiconductor device and fabrication method thereof and semiconductor structure
US9847315B2 (en) Packages, packaging methods, and packaged semiconductor devices
JP6619294B2 (ja) 配線基板及びその製造方法と電子部品装置
CN103887276B (zh) 防止凸点侧向刻蚀的凸点结构及成型方法
CN104681451A (zh) 用于基片和裸片之间的粘合剂控制的方法
JP2017212271A5 (enExample)
CN104952735B (zh) 具有金属柱的芯片封装结构及其形成方法
JP2011249564A5 (enExample)
CN103311131B (zh) 一种微凸点制造过程中防止微凸点侧向钻蚀的方法
TWI666746B (zh) 覆晶式封裝基板、覆晶式封裝件及其製法
CN103579150A (zh) 用于球栅阵列的焊料凸块
JP2018507556A5 (enExample)
JP2017538280A5 (enExample)
CN106298719A (zh) 金属凸块结构及其形成方法
CN203288579U (zh) 圆片封装结构
US20140242793A1 (en) Pattern forming method and method of manufacturing semiconductor device