JP2015188214A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2015188214A JP2015188214A JP2015045745A JP2015045745A JP2015188214A JP 2015188214 A JP2015188214 A JP 2015188214A JP 2015045745 A JP2015045745 A JP 2015045745A JP 2015045745 A JP2015045745 A JP 2015045745A JP 2015188214 A JP2015188214 A JP 2015188214A
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- transistor
- film
- oxide semiconductor
- voltage
- circuit
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
- G11C5/146—Substrate bias generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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Abstract
Description
図1に本発明の一態様に係る半導体装置のブロック図を示す。本発明の一態様に係る半導体装置は可変バイアス回路101、しきい値電圧モニター用トランジスタ102、電流源103、差動増幅器104、基準電圧源105、酸化物半導体を用いた機能回路106、酸化物半導体トランジスタ107からなる。ここで、機能回路106はバックゲートが制御された酸化物半導体トランジスタ107を含む回路で、一般にはメモリ、演算回路、増幅回路などであるがこれには限定されない。
図3は可変バイアス回路101をさらに具体化したブロック図である。図3に示す可変バイアス回路はPWM波発生回路301、定電圧回路302、インバータ303、レベルシフタ304、305、スイッチトランジスタ306、307、抵抗308、容量309より構成されている。PWM波発生回路301は入力される電圧によってデューティ比を制御可能な信号発生回路である。
図6に酸化物半導体トランジスタをメモリ回路に使用した例を示す。メモリセル200は書き込みトランジスタ201、読み出しトランジスタ202、保持容量203から構成される。ここで書き込みトランジスタ201は酸化物半導体トランジスタであり、読み出しトランジスタ202はp型Siトランジスタとして説明をおこなう。読み出しトランジスタ202はn型Siトランジスタまたは酸化物半導体トランジスタを用いてもよい。なお、本実施の形態に示すメモリ回路が先の実施の形態に示す機能回路106に対応し、書き込みトランジスタ201が先の実施の形態に示す酸化物半導体トランジスタ107に対応する。
本実施の形態では、上記実施の形態で説明した、オフ電流の低い、書き込みトランジスタ(以下、第1のトランジスタと呼ぶ場合がある。)の半導体層に用いることのできる酸化物半導体層について説明する。書き込み用の第1のトランジスタ以外のトランジスタ、例えば、読み出しトランジスタ(以下、第2のトランジスタと呼ぶ場合がある。)、図1、図3、図6及び図7に示す各種回路で用いられるトランジスタ等にも、以下で説明する酸化物半導体層をチャネル層として用いることは可能である。
本実施の形態では、開示する発明の一態様に係る半導体装置に用いられるトランジスタの断面構造の一例について、図面を参照して説明する。
上記実施の形態で開示された、導電膜や半導体膜はスパッタ法により形成することができるが、他の方法、例えば、熱CVD法により形成してもよい。熱CVD法の例としてMOCVD(Metal Organic Chemical Vapor Deposition)法やALD(Atomic Layer Deposition)法を使っても良い。
本実施の形態では、上述の実施の形態で説明した半導体装置を電子部品に適用する例、及び該電子部品を具備する電子機器に適用する例について、図13、図14を用いて説明する。
15 トランジスタ
70 電子銃室
72 光学系
74 試料室
76 光学系
78 カメラ
80 観察室
82 フィルム室
84 電子
88 物質
92 蛍光板
101 可変バイアス回路
102 トランジスタ
103 電流源
104 差動増幅器
105 基準電圧源
106 機能回路
107 トランジスタ
200 メモリセル
201 トランジスタ
202 トランジスタ
203 保持容量
204 ワード線
205 容量ワード線
206 ソース線
207 ビット線
208 バックゲートバイアス線
209 駆動回路
210 駆動回路
301 PWM波発生回路
302 定電圧回路
303 インバータ
304 レベルシフタ
305 レベルシフタ
306 スイッチトランジスタ
307 スイッチトランジスタ
308 抵抗
309 容量
400 基板
401 素子分離領域
402 不純物領域
403 不純物領域
404 チャネル形成領域
405 絶縁膜
406 ゲート電極
411 絶縁膜
412 導電膜
413 導電膜
414 導電膜
416 導電膜
417 導電膜
418 導電膜
420 絶縁膜
421 絶縁膜
422 絶縁膜
424 ゲート電極
430 半導体膜
430a 酸化物半導体膜
430b 酸化物半導体膜
430c 酸化物半導体膜
431 ゲート絶縁膜
432 導電膜
433 導電膜
434 ゲート電極
501 三角波発生回路
502 コンパレータ
503 インバータバッファ
504 インバータバッファ
601 インバータ
602 スイッチ
603 NAND
604 クロックインバータ
605 スイッチ
606 インバータ
607 クロックNAND
608 マルチプレクサ
609 インバータ
610 酸化物半導体トランジスタ
611 トランジスタ
612 トランジスタ
613 トランジスタ
614 容量
615 容量
616 配線
700 電子部品
701 リード
702 プリント基板
703 回路部
704 回路基板
901 筐体
902 筐体
903a 表示部
903b 表示部
904 選択ボタン
905 キーボード
910 電子書籍
911 筐体
912 筐体
913 表示部
914 表示部
915 軸部
916 電源
917 操作キー
918 スピーカー
920 テレビジョン装置
921 筐体
922 表示部
923 スタンド
924 リモコン操作機
930 本体
931 表示部
932 スピーカー
933 マイク
934 操作ボタン
941 本体
942 表示部
943 操作スイッチ
Claims (4)
- 可変バイアス回路と、バックゲートを有する第1のトランジスタと、電流源と、差動増幅器と、基準電圧源と、機能回路を有し、
前記機能回路は、バックゲートを有する第2のトランジスタを有し、
前記第1のトランジスタ及び前記第2のトランジスタは、酸化物半導体を有し、
前記電流源は、第1のトランジスタのドレイン・ソース間に電流を流し、当該電流に応じたゲート・ソース間電圧を発生させ、
前記差動増幅器は、前記第1のトランジスタのゲート・ソース間電圧と前記基準電圧源の電圧とを比較し、差分を増幅して出力し、
前記可変バイアス回路は、前記差動増幅器の出力電圧または出力電流によって制御され、前記第1のトランジスタのバックゲートおよび、前記第2のトランジスタのバックゲートに電圧を供給することを特徴とする半導体装置。 - 請求項1において、
前記可変バイアス回路はPWM波発生回路を有することを特徴とする半導体装置。 - 請求項1または請求項2において、
前記機能回路はメモリ回路であることを特徴とする半導体装置。 - 請求項1または請求項2において、
前記機能回路はレジスタ回路であることを特徴とする半導体装置。
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Also Published As
Publication number | Publication date |
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TW201539978A (zh) | 2015-10-16 |
WO2015136413A1 (en) | 2015-09-17 |
US20150263175A1 (en) | 2015-09-17 |
TWI661673B (zh) | 2019-06-01 |
KR20160132405A (ko) | 2016-11-18 |
US20160307607A1 (en) | 2016-10-20 |
US9378777B2 (en) | 2016-06-28 |
JP6533397B2 (ja) | 2019-06-19 |
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