JP2015149513A5 - - Google Patents
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- Publication number
- JP2015149513A5 JP2015149513A5 JP2015106595A JP2015106595A JP2015149513A5 JP 2015149513 A5 JP2015149513 A5 JP 2015149513A5 JP 2015106595 A JP2015106595 A JP 2015106595A JP 2015106595 A JP2015106595 A JP 2015106595A JP 2015149513 A5 JP2015149513 A5 JP 2015149513A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- absorption traces
- traces
- absorption
- ultra
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010521 absorption reaction Methods 0.000 claims description 37
- 239000010408 film Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35076510P | 2010-06-02 | 2010-06-02 | |
| US61/350,765 | 2010-06-02 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013514223A Division JP5780682B2 (ja) | 2010-06-02 | 2011-06-02 | 低温基板上の薄膜の側方熱処理を提供する方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016157478A Division JP2016195285A (ja) | 2010-06-02 | 2016-08-10 | 低温基板上の薄膜の側方熱処理を提供する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015149513A JP2015149513A (ja) | 2015-08-20 |
| JP2015149513A5 true JP2015149513A5 (enExample) | 2018-03-22 |
| JP6359484B2 JP6359484B2 (ja) | 2018-07-18 |
Family
ID=45064782
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013514223A Active JP5780682B2 (ja) | 2010-06-02 | 2011-06-02 | 低温基板上の薄膜の側方熱処理を提供する方法 |
| JP2015106595A Active JP6359484B2 (ja) | 2010-06-02 | 2015-05-26 | 低温基板上の薄膜の側方熱処理を提供する方法 |
| JP2016157478A Withdrawn JP2016195285A (ja) | 2010-06-02 | 2016-08-10 | 低温基板上の薄膜の側方熱処理を提供する方法 |
| JP2018241034A Pending JP2019071453A (ja) | 2010-06-02 | 2018-12-25 | 低温基板上の薄膜の側方熱処理を提供する方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013514223A Active JP5780682B2 (ja) | 2010-06-02 | 2011-06-02 | 低温基板上の薄膜の側方熱処理を提供する方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016157478A Withdrawn JP2016195285A (ja) | 2010-06-02 | 2016-08-10 | 低温基板上の薄膜の側方熱処理を提供する方法 |
| JP2018241034A Pending JP2019071453A (ja) | 2010-06-02 | 2018-12-25 | 低温基板上の薄膜の側方熱処理を提供する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US8557642B2 (enExample) |
| EP (1) | EP2576860B1 (enExample) |
| JP (4) | JP5780682B2 (enExample) |
| KR (2) | KR101648101B1 (enExample) |
| CN (2) | CN104992901B (enExample) |
| CA (1) | CA2801900C (enExample) |
| WO (1) | WO2011153357A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10000411B2 (en) | 2010-01-16 | 2018-06-19 | Cardinal Cg Company | Insulating glass unit transparent conductivity and low emissivity coating technology |
| US9862640B2 (en) | 2010-01-16 | 2018-01-09 | Cardinal Cg Company | Tin oxide overcoat indium tin oxide coatings, coated glazings, and production methods |
| US10060180B2 (en) | 2010-01-16 | 2018-08-28 | Cardinal Cg Company | Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology |
| US11155493B2 (en) | 2010-01-16 | 2021-10-26 | Cardinal Cg Company | Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods |
| US10000965B2 (en) | 2010-01-16 | 2018-06-19 | Cardinal Cg Company | Insulating glass unit transparent conductive coating technology |
| US9639001B2 (en) * | 2014-02-04 | 2017-05-02 | Raytheon Company | Optically transitioned metal-insulator surface |
| US9728668B2 (en) | 2014-02-04 | 2017-08-08 | Raytheon Company | Integrated photosensitive film and thin LED display |
| US10593821B2 (en) | 2014-09-12 | 2020-03-17 | Board Of Regents, The University Of Texas System | Photonic curing of nanocrystal films for photovoltaics |
| CA3088725A1 (en) * | 2018-01-19 | 2019-07-25 | Ncc Nano, Llc | Method for curing solder paste on a thermally fragile substrate |
| US11028012B2 (en) | 2018-10-31 | 2021-06-08 | Cardinal Cg Company | Low solar heat gain coatings, laminated glass assemblies, and methods of producing same |
| JP7203417B2 (ja) | 2019-01-31 | 2023-01-13 | 株式会社ブイ・テクノロジー | レーザアニール方法、レーザアニール装置、およびｔｆｔ基板 |
| EP3928966A1 (en) | 2020-06-26 | 2021-12-29 | Carl Zeiss Vision International GmbH | Method for manufacturing a coated lens |
| US11981999B2 (en) | 2020-11-25 | 2024-05-14 | Applied Materials, Inc. | Supplemental energy for low temperature processes |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5302230A (en) | 1980-02-27 | 1994-04-12 | Ricoh Company, Ltd. | Heat treatment by light irradiation |
| DE3584798D1 (de) * | 1984-07-17 | 1992-01-16 | Nec Corp | Anreizverfahren und vorrichtung fuer photochemische reaktionen. |
| JPH0715881B2 (ja) * | 1984-12-20 | 1995-02-22 | ソニー株式会社 | 半導体薄膜の熱処理方法 |
| JPH0727198B2 (ja) * | 1987-02-18 | 1995-03-29 | キヤノン株式会社 | 多層膜反射型マスク |
| JPH02275641A (ja) * | 1989-04-17 | 1990-11-09 | Seiko Epson Corp | 半導体装置の製造方法 |
| US5180226A (en) * | 1991-10-30 | 1993-01-19 | Texas Instruments Incorporated | Method and apparatus for precise temperature measurement |
| CA2137632A1 (en) * | 1993-12-17 | 1995-06-18 | Douglas S. Dunn | Ablative flashlamp imaging |
| JPH09116158A (ja) * | 1995-10-17 | 1997-05-02 | Hitachi Ltd | 軽量基板薄膜半導体装置および液晶表示装置 |
| US5950078A (en) * | 1997-09-19 | 1999-09-07 | Sharp Laboratories Of America, Inc. | Rapid thermal annealing with absorptive layers for thin film transistors on transparent substrates |
| US6159832A (en) * | 1998-03-18 | 2000-12-12 | Mayer; Frederick J. | Precision laser metallization |
| JP3586558B2 (ja) * | 1998-04-17 | 2004-11-10 | 日本電気株式会社 | 薄膜の改質方法及びその実施に使用する装置 |
| TW457553B (en) | 1999-01-08 | 2001-10-01 | Sony Corp | Process for producing thin film semiconductor device and laser irradiation apparatus |
| US6962860B2 (en) | 2001-11-09 | 2005-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US7364952B2 (en) * | 2003-09-16 | 2008-04-29 | The Trustees Of Columbia University In The City Of New York | Systems and methods for processing thin films |
| JP2005150608A (ja) * | 2003-11-19 | 2005-06-09 | Seiko Epson Corp | ガラス基板の光処理方法およびデバイス |
| TW200541079A (en) | 2004-06-04 | 2005-12-16 | Adv Lcd Tech Dev Ct Co Ltd | Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device |
| JP2006066902A (ja) * | 2004-07-28 | 2006-03-09 | Advanced Lcd Technologies Development Center Co Ltd | 半導体装置の製造方法 |
| US20070037346A1 (en) * | 2005-02-22 | 2007-02-15 | Grant Robert W | Rapid thermal annealing of targeted thin film layers |
| US7943447B2 (en) * | 2007-08-08 | 2011-05-17 | Ramesh Kakkad | Methods of fabricating crystalline silicon, thin film transistors, and solar cells |
| JP5447909B2 (ja) * | 2008-04-25 | 2014-03-19 | 株式会社日本製鋼所 | 薄膜材料の結晶化方法及びその装置 |
| US8410712B2 (en) * | 2008-07-09 | 2013-04-02 | Ncc Nano, Llc | Method and apparatus for curing thin films on low-temperature substrates at high speeds |
| JP5167050B2 (ja) * | 2008-09-30 | 2013-03-21 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法およびマスクの製造方法 |
| US20100170566A1 (en) * | 2009-01-06 | 2010-07-08 | Arthur Don Harmala | Apparatus and method for manufacturing polymer solar cells |
| JP2010219207A (ja) * | 2009-03-16 | 2010-09-30 | Sony Corp | 金属−絶縁体相転移材料を用いた機能要素の形成方法及びこれによって形成された機能要素、並びに機能デバイスの製造方法及びこれによって製造された機能デバイス |
| JP7027198B2 (ja) | 2018-03-06 | 2022-03-01 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
-
2011
- 2011-06-02 KR KR1020127034243A patent/KR101648101B1/ko active Active
- 2011-06-02 CN CN201510261174.8A patent/CN104992901B/zh active Active
- 2011-06-02 EP EP11790412.8A patent/EP2576860B1/en not_active Not-in-force
- 2011-06-02 CN CN201180037944.0A patent/CN103038389B/zh active Active
- 2011-06-02 CA CA2801900A patent/CA2801900C/en active Active
- 2011-06-02 WO PCT/US2011/038937 patent/WO2011153357A1/en not_active Ceased
- 2011-06-02 US US13/152,065 patent/US8557642B2/en active Active
- 2011-06-02 JP JP2013514223A patent/JP5780682B2/ja active Active
- 2011-06-02 KR KR1020157035388A patent/KR101655879B1/ko active Active
-
2013
- 2013-09-11 US US14/024,243 patent/US9006047B2/en active Active
-
2015
- 2015-03-02 US US14/635,729 patent/US10553450B2/en active Active
- 2015-05-26 JP JP2015106595A patent/JP6359484B2/ja active Active
-
2016
- 2016-08-10 JP JP2016157478A patent/JP2016195285A/ja not_active Withdrawn
-
2018
- 2018-12-25 JP JP2018241034A patent/JP2019071453A/ja active Pending
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