JP2008270664A5 - - Google Patents
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- Publication number
- JP2008270664A5 JP2008270664A5 JP2007114570A JP2007114570A JP2008270664A5 JP 2008270664 A5 JP2008270664 A5 JP 2008270664A5 JP 2007114570 A JP2007114570 A JP 2007114570A JP 2007114570 A JP2007114570 A JP 2007114570A JP 2008270664 A5 JP2008270664 A5 JP 2008270664A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- region
- openings
- opening
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 29
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007114570A JP5127288B2 (ja) | 2007-04-24 | 2007-04-24 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007114570A JP5127288B2 (ja) | 2007-04-24 | 2007-04-24 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008270664A JP2008270664A (ja) | 2008-11-06 |
| JP2008270664A5 true JP2008270664A5 (enExample) | 2010-05-20 |
| JP5127288B2 JP5127288B2 (ja) | 2013-01-23 |
Family
ID=40049745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007114570A Expired - Fee Related JP5127288B2 (ja) | 2007-04-24 | 2007-04-24 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5127288B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8603841B2 (en) * | 2010-08-27 | 2013-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of semiconductor device and light-emitting display device |
| KR101733196B1 (ko) * | 2010-09-03 | 2017-05-25 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이의 제조 방법, 및 이를 구비한 표시 장치 |
| CN109496359B (zh) * | 2018-10-08 | 2020-04-28 | 长江存储科技有限责任公司 | 利用自然氧化层形成具有沟道结构的三维存储器件的方法 |
-
2007
- 2007-04-24 JP JP2007114570A patent/JP5127288B2/ja not_active Expired - Fee Related
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