JP2008270664A5 - - Google Patents

Claims (6)

An insulating film is formed on the substrate,
Forming a first semiconductor layer on the insulating film;
Forming an opening reaching the insulating film in the first semiconductor layer ;
By applying a laser beam to the opening and the first semiconductor layer, wherein the melting the end portion of the first semiconductor layer in the opening, the molten first semiconductor layer said insulating layer part of the opening of the and filling the opening to flow upward as a second semiconductor layer, a second semiconductor layer of said an opening area smaller than the second semiconductor layer around said was open area,
In the second semiconductor layer ,
A channel formation region in the region that was the opening ,
A method for manufacturing a semiconductor device, wherein a source region and a drain region are formed around a region which is the opening . An insulating film is formed on the substrate,
Forming a first semiconductor layer on the insulating film;
Forming a plurality of slit-shaped openings reaching the insulating film in the first semiconductor layer ;
By irradiating a laser beam to said plurality of openings and the first semiconductor layer, and melting the first semiconductor layer between said plurality of slit-like openings in the plurality of openings, the first semiconductor to which the molten A layer is flowed over the insulating film having a plurality of openings to fill the plurality of openings to form a second semiconductor layer, and the second semiconductor layer in the region that is the plurality of openings is the plurality of openings. Thinner than the second semiconductor layer around the region,
In the second semiconductor layer ,
A channel formation region in the region that was the plurality of openings ,
A method for manufacturing a semiconductor device, wherein a source region and a drain region are formed around a region which is the plurality of openings . Oite to claim 1, wherein the laser light has an energy intensity distribution with respect to the irradiation region, and wherein the laser beam energy to be irradiated to the opening periphery of the first semiconductor layer is the largest A method for manufacturing a semiconductor device. 3. The laser beam according to claim 2 , wherein the laser beam has an energy intensity distribution with respect to an irradiation region, and the energy of the laser beam irradiated around the plurality of slit-like openings in the first semiconductor layer is the largest. A method for manufacturing a semiconductor device. In any one of claims 1 to 4, the method for manufacturing a semiconductor device, which comprises irradiating a laser beam to the second semiconductor layer. 6. The method for manufacturing a semiconductor device according to claim 5 , wherein the first semiconductor layer is an amorphous semiconductor layer.