KR101648101B1 - 저온 기판들 상의 박막들의 측방향 열적 프로세싱을 제공하기 위한 방법 - Google Patents

저온 기판들 상의 박막들의 측방향 열적 프로세싱을 제공하기 위한 방법 Download PDF

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KR101648101B1
KR101648101B1 KR1020127034243A KR20127034243A KR101648101B1 KR 101648101 B1 KR101648101 B1 KR 101648101B1 KR 1020127034243 A KR1020127034243 A KR 1020127034243A KR 20127034243 A KR20127034243 A KR 20127034243A KR 101648101 B1 KR101648101 B1 KR 101648101B1
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thin film
ultra thin
traces
absorption traces
substrate
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KR20130086547A (ko
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쿠르트 에이. 슈로더
로버트 피. 벤즈
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엔씨씨 나노, 엘엘씨
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H10D86/0227—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using structural arrangements to control crystal growth, e.g. placement of grain filters
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    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020127034243A 2010-06-02 2011-06-02 저온 기판들 상의 박막들의 측방향 열적 프로세싱을 제공하기 위한 방법 Active KR101648101B1 (ko)

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US35076510P 2010-06-02 2010-06-02
US61/350,765 2010-06-02
PCT/US2011/038937 WO2011153357A1 (en) 2010-06-02 2011-06-02 Method for providing lateral thermal processing of thin films on low-temperature substrates

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KR1020157035388A Division KR101655879B1 (ko) 2010-06-02 2011-06-02 저온 기판들 상의 박막들의 측방향 열적 프로세싱을 제공하기 위한 방법

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KR101648101B1 true KR101648101B1 (ko) 2016-08-16

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KR1020157035388A Active KR101655879B1 (ko) 2010-06-02 2011-06-02 저온 기판들 상의 박막들의 측방향 열적 프로세싱을 제공하기 위한 방법

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US (3) US8557642B2 (enExample)
EP (1) EP2576860B1 (enExample)
JP (4) JP5780682B2 (enExample)
KR (2) KR101648101B1 (enExample)
CN (2) CN104992901B (enExample)
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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10000411B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductivity and low emissivity coating technology
US9862640B2 (en) 2010-01-16 2018-01-09 Cardinal Cg Company Tin oxide overcoat indium tin oxide coatings, coated glazings, and production methods
US10060180B2 (en) 2010-01-16 2018-08-28 Cardinal Cg Company Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology
US11155493B2 (en) 2010-01-16 2021-10-26 Cardinal Cg Company Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods
US10000965B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductive coating technology
US9639001B2 (en) * 2014-02-04 2017-05-02 Raytheon Company Optically transitioned metal-insulator surface
US9728668B2 (en) 2014-02-04 2017-08-08 Raytheon Company Integrated photosensitive film and thin LED display
US10593821B2 (en) 2014-09-12 2020-03-17 Board Of Regents, The University Of Texas System Photonic curing of nanocrystal films for photovoltaics
CA3088725A1 (en) * 2018-01-19 2019-07-25 Ncc Nano, Llc Method for curing solder paste on a thermally fragile substrate
US11028012B2 (en) 2018-10-31 2021-06-08 Cardinal Cg Company Low solar heat gain coatings, laminated glass assemblies, and methods of producing same
JP7203417B2 (ja) 2019-01-31 2023-01-13 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置、およびｔｆｔ基板
EP3928966A1 (en) 2020-06-26 2021-12-29 Carl Zeiss Vision International GmbH Method for manufacturing a coated lens
US11981999B2 (en) 2020-11-25 2024-05-14 Applied Materials, Inc. Supplemental energy for low temperature processes

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087194A (ja) 2008-09-30 2010-04-15 Renesas Technology Corp 半導体装置の製造方法およびマスクの製造方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302230A (en) 1980-02-27 1994-04-12 Ricoh Company, Ltd. Heat treatment by light irradiation
DE3584798D1 (de) * 1984-07-17 1992-01-16 Nec Corp Anreizverfahren und vorrichtung fuer photochemische reaktionen.
JPH0715881B2 (ja) * 1984-12-20 1995-02-22 ソニー株式会社 半導体薄膜の熱処理方法
JPH0727198B2 (ja) * 1987-02-18 1995-03-29 キヤノン株式会社 多層膜反射型マスク
JPH02275641A (ja) * 1989-04-17 1990-11-09 Seiko Epson Corp 半導体装置の製造方法
US5180226A (en) * 1991-10-30 1993-01-19 Texas Instruments Incorporated Method and apparatus for precise temperature measurement
CA2137632A1 (en) * 1993-12-17 1995-06-18 Douglas S. Dunn Ablative flashlamp imaging
JPH09116158A (ja) * 1995-10-17 1997-05-02 Hitachi Ltd 軽量基板薄膜半導体装置および液晶表示装置
US5950078A (en) * 1997-09-19 1999-09-07 Sharp Laboratories Of America, Inc. Rapid thermal annealing with absorptive layers for thin film transistors on transparent substrates
US6159832A (en) * 1998-03-18 2000-12-12 Mayer; Frederick J. Precision laser metallization
JP3586558B2 (ja) * 1998-04-17 2004-11-10 日本電気株式会社 薄膜の改質方法及びその実施に使用する装置
TW457553B (en) 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
US6962860B2 (en) 2001-11-09 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
JP2005150608A (ja) * 2003-11-19 2005-06-09 Seiko Epson Corp ガラス基板の光処理方法およびデバイス
TW200541079A (en) 2004-06-04 2005-12-16 Adv Lcd Tech Dev Ct Co Ltd Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device
JP2006066902A (ja) * 2004-07-28 2006-03-09 Advanced Lcd Technologies Development Center Co Ltd 半導体装置の製造方法
US20070037346A1 (en) * 2005-02-22 2007-02-15 Grant Robert W Rapid thermal annealing of targeted thin film layers
US7943447B2 (en) * 2007-08-08 2011-05-17 Ramesh Kakkad Methods of fabricating crystalline silicon, thin film transistors, and solar cells
JP5447909B2 (ja) * 2008-04-25 2014-03-19 株式会社日本製鋼所 薄膜材料の結晶化方法及びその装置
US8410712B2 (en) * 2008-07-09 2013-04-02 Ncc Nano, Llc Method and apparatus for curing thin films on low-temperature substrates at high speeds
US20100170566A1 (en) * 2009-01-06 2010-07-08 Arthur Don Harmala Apparatus and method for manufacturing polymer solar cells
JP2010219207A (ja) * 2009-03-16 2010-09-30 Sony Corp 金属−絶縁体相転移材料を用いた機能要素の形成方法及びこれによって形成された機能要素、並びに機能デバイスの製造方法及びこれによって製造された機能デバイス
JP7027198B2 (ja) 2018-03-06 2022-03-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087194A (ja) 2008-09-30 2010-04-15 Renesas Technology Corp 半導体装置の製造方法およびマスクの製造方法

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