JP5780682B2 - 低温基板上の薄膜の側方熱処理を提供する方法 - Google Patents

低温基板上の薄膜の側方熱処理を提供する方法 Download PDF

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JP5780682B2
JP5780682B2 JP2013514223A JP2013514223A JP5780682B2 JP 5780682 B2 JP5780682 B2 JP 5780682B2 JP 2013514223 A JP2013514223 A JP 2013514223A JP 2013514223 A JP2013514223 A JP 2013514223A JP 5780682 B2 JP5780682 B2 JP 5780682B2
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thin film
substrate
film
traces
absorption
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JP2014505348A (ja
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カート エー． シュローダー，
カート エー． シュローダー，
ロバート ピー． ウェンツ，
ロバート ピー． ウェンツ，
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エヌシーシー ナノ， エルエルシー
エヌシーシー ナノ， エルエルシー
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0227—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using structural arrangements to control crystal growth, e.g. placement of grain filters
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    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
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  • Engineering & Computer Science (AREA)
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  • Manufacturing & Machinery (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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  • Materials Engineering (AREA)
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  • High Energy & Nuclear Physics (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2013514223A 2010-06-02 2011-06-02 低温基板上の薄膜の側方熱処理を提供する方法 Active JP5780682B2 (ja)

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US35076510P 2010-06-02 2010-06-02
US61/350,765 2010-06-02
PCT/US2011/038937 WO2011153357A1 (en) 2010-06-02 2011-06-02 Method for providing lateral thermal processing of thin films on low-temperature substrates

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JP2015106595A Active JP6359484B2 (ja) 2010-06-02 2015-05-26 低温基板上の薄膜の側方熱処理を提供する方法
JP2016157478A Withdrawn JP2016195285A (ja) 2010-06-02 2016-08-10 低温基板上の薄膜の側方熱処理を提供する方法
JP2018241034A Pending JP2019071453A (ja) 2010-06-02 2018-12-25 低温基板上の薄膜の側方熱処理を提供する方法

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JP2016157478A Withdrawn JP2016195285A (ja) 2010-06-02 2016-08-10 低温基板上の薄膜の側方熱処理を提供する方法
JP2018241034A Pending JP2019071453A (ja) 2010-06-02 2018-12-25 低温基板上の薄膜の側方熱処理を提供する方法

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US (3) US8557642B2 (enExample)
EP (1) EP2576860B1 (enExample)
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CN (2) CN104992901B (enExample)
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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10000411B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductivity and low emissivity coating technology
US9862640B2 (en) 2010-01-16 2018-01-09 Cardinal Cg Company Tin oxide overcoat indium tin oxide coatings, coated glazings, and production methods
US10060180B2 (en) 2010-01-16 2018-08-28 Cardinal Cg Company Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology
US11155493B2 (en) 2010-01-16 2021-10-26 Cardinal Cg Company Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods
US10000965B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductive coating technology
US9639001B2 (en) * 2014-02-04 2017-05-02 Raytheon Company Optically transitioned metal-insulator surface
US9728668B2 (en) 2014-02-04 2017-08-08 Raytheon Company Integrated photosensitive film and thin LED display
US10593821B2 (en) 2014-09-12 2020-03-17 Board Of Regents, The University Of Texas System Photonic curing of nanocrystal films for photovoltaics
CA3088725A1 (en) * 2018-01-19 2019-07-25 Ncc Nano, Llc Method for curing solder paste on a thermally fragile substrate
US11028012B2 (en) 2018-10-31 2021-06-08 Cardinal Cg Company Low solar heat gain coatings, laminated glass assemblies, and methods of producing same
JP7203417B2 (ja) 2019-01-31 2023-01-13 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置、およびｔｆｔ基板
EP3928966A1 (en) 2020-06-26 2021-12-29 Carl Zeiss Vision International GmbH Method for manufacturing a coated lens
US11981999B2 (en) 2020-11-25 2024-05-14 Applied Materials, Inc. Supplemental energy for low temperature processes

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302230A (en) 1980-02-27 1994-04-12 Ricoh Company, Ltd. Heat treatment by light irradiation
DE3584798D1 (de) * 1984-07-17 1992-01-16 Nec Corp Anreizverfahren und vorrichtung fuer photochemische reaktionen.
JPH0715881B2 (ja) * 1984-12-20 1995-02-22 ソニー株式会社 半導体薄膜の熱処理方法
JPH0727198B2 (ja) * 1987-02-18 1995-03-29 キヤノン株式会社 多層膜反射型マスク
JPH02275641A (ja) * 1989-04-17 1990-11-09 Seiko Epson Corp 半導体装置の製造方法
US5180226A (en) * 1991-10-30 1993-01-19 Texas Instruments Incorporated Method and apparatus for precise temperature measurement
CA2137632A1 (en) * 1993-12-17 1995-06-18 Douglas S. Dunn Ablative flashlamp imaging
JPH09116158A (ja) * 1995-10-17 1997-05-02 Hitachi Ltd 軽量基板薄膜半導体装置および液晶表示装置
US5950078A (en) * 1997-09-19 1999-09-07 Sharp Laboratories Of America, Inc. Rapid thermal annealing with absorptive layers for thin film transistors on transparent substrates
US6159832A (en) * 1998-03-18 2000-12-12 Mayer; Frederick J. Precision laser metallization
JP3586558B2 (ja) * 1998-04-17 2004-11-10 日本電気株式会社 薄膜の改質方法及びその実施に使用する装置
TW457553B (en) 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
US6962860B2 (en) 2001-11-09 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
JP2005150608A (ja) * 2003-11-19 2005-06-09 Seiko Epson Corp ガラス基板の光処理方法およびデバイス
TW200541079A (en) 2004-06-04 2005-12-16 Adv Lcd Tech Dev Ct Co Ltd Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device
JP2006066902A (ja) * 2004-07-28 2006-03-09 Advanced Lcd Technologies Development Center Co Ltd 半導体装置の製造方法
US20070037346A1 (en) * 2005-02-22 2007-02-15 Grant Robert W Rapid thermal annealing of targeted thin film layers
US7943447B2 (en) * 2007-08-08 2011-05-17 Ramesh Kakkad Methods of fabricating crystalline silicon, thin film transistors, and solar cells
JP5447909B2 (ja) * 2008-04-25 2014-03-19 株式会社日本製鋼所 薄膜材料の結晶化方法及びその装置
US8410712B2 (en) * 2008-07-09 2013-04-02 Ncc Nano, Llc Method and apparatus for curing thin films on low-temperature substrates at high speeds
JP5167050B2 (ja) * 2008-09-30 2013-03-21 ルネサスエレクトロニクス株式会社 半導体装置の製造方法およびマスクの製造方法
US20100170566A1 (en) * 2009-01-06 2010-07-08 Arthur Don Harmala Apparatus and method for manufacturing polymer solar cells
JP2010219207A (ja) * 2009-03-16 2010-09-30 Sony Corp 金属−絶縁体相転移材料を用いた機能要素の形成方法及びこれによって形成された機能要素、並びに機能デバイスの製造方法及びこれによって製造された機能デバイス
JP7027198B2 (ja) 2018-03-06 2022-03-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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WO2011153357A1 (en) 2011-12-08
US10553450B2 (en) 2020-02-04
JP2016195285A (ja) 2016-11-17
EP2576860A4 (en) 2015-04-08
CA2801900C (en) 2018-03-13
JP6359484B2 (ja) 2018-07-18
CN103038389B (zh) 2015-06-17
US20140017857A1 (en) 2014-01-16
KR20130086547A (ko) 2013-08-02
KR101655879B1 (ko) 2016-09-08
US8557642B2 (en) 2013-10-15
US20110300676A1 (en) 2011-12-08
CN103038389A (zh) 2013-04-10
CN104992901A (zh) 2015-10-21
CN104992901B (zh) 2017-03-15
JP2019071453A (ja) 2019-05-09
JP2015149513A (ja) 2015-08-20
CA2801900A1 (en) 2011-12-08
KR20160003297A (ko) 2016-01-08
JP2014505348A (ja) 2014-02-27
EP2576860A1 (en) 2013-04-10
US9006047B2 (en) 2015-04-14
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US20150311092A1 (en) 2015-10-29

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