CN104992901B - 用于提供在低温衬底上的薄膜的横向热处理方法 - Google Patents

用于提供在低温衬底上的薄膜的横向热处理方法 Download PDF

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CN104992901B
CN104992901B CN201510261174.8A CN201510261174A CN104992901B CN 104992901 B CN104992901 B CN 104992901B CN 201510261174 A CN201510261174 A CN 201510261174A CN 104992901 B CN104992901 B CN 104992901B
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thin film
extremely thin
absorption
substrate
traces
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CN104992901A (zh
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K·A·施罗德
R·P·文茨
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NCC Nano LLC
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NCC Nano LLC
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02656—Special treatments
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    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
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    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0227—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using structural arrangements to control crystal growth, e.g. placement of grain filters
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    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
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  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
CN201510261174.8A 2010-06-02 2011-06-02 用于提供在低温衬底上的薄膜的横向热处理方法 Active CN104992901B (zh)

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US35076510P 2010-06-02 2010-06-02
US61/350,765 2010-06-02
CN201180037944.0A CN103038389B (zh) 2010-06-02 2011-06-02 用于提供在低温衬底上的薄膜的横向热处理方法

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CA2801900C (en) 2018-03-13
KR101648101B1 (ko) 2016-08-16
US9006047B2 (en) 2015-04-14
EP2576860B1 (en) 2017-08-09
KR20160003297A (ko) 2016-01-08
JP6359484B2 (ja) 2018-07-18
JP2019071453A (ja) 2019-05-09
WO2011153357A1 (en) 2011-12-08
US20110300676A1 (en) 2011-12-08
JP5780682B2 (ja) 2015-09-16
KR20130086547A (ko) 2013-08-02
CA2801900A1 (en) 2011-12-08
KR101655879B1 (ko) 2016-09-08
US8557642B2 (en) 2013-10-15
US20150311092A1 (en) 2015-10-29
CN104992901A (zh) 2015-10-21
CN103038389A (zh) 2013-04-10
CN103038389B (zh) 2015-06-17
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