JP2015043070A - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP2015043070A JP2015043070A JP2014103390A JP2014103390A JP2015043070A JP 2015043070 A JP2015043070 A JP 2015043070A JP 2014103390 A JP2014103390 A JP 2014103390A JP 2014103390 A JP2014103390 A JP 2014103390A JP 2015043070 A JP2015043070 A JP 2015043070A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134381—Hybrid switching mode, i.e. for applying an electric field with components parallel and orthogonal to the substrates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/13712—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering the liquid crystal having negative dielectric anisotropy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
Abstract
Description
本実施の形態においては、本発明の一態様の液晶表示装置の画素の構成例について、図1を用いて説明を行う。
図1(A)に、本発明の一態様に係る液晶表示装置の、画素の構成例を示す。図1(A)に示す画素100は、液晶素子111と、液晶素子111への画像信号の供給を制御するトランジスタ112と、容量素子113と、を有する。
次いで、液晶表示装置の一形態に相当する、パネルの構成例について説明する。
次いで、本発明の一態様に係る液晶表示装置の構成例について説明する。
次いで、図1(A)に示す画素100の上面図の一例を図5に示す。なお、図5では、画素100の上面図を明確にするために、ゲート絶縁膜などの構成要素の一部を省略して図示している。また、図5に示す一点鎖線A1−A2間、及び一点鎖線A3−A4間の切断面に相当する断面図を図6に示す。
次いで、図6に示す画素の作製方法の一例について、図7及び図8を用いて説明を行う。
本実施の形態においては、本発明の一態様の液晶表示装置に用いることのできる酸化物半導体膜について説明を行う。
本実施の形態においては、本発明の一態様の液晶表示装置の画素の構成例について、実施の形態1の図5及び図6に示す画素100の上面図及び断面図と異なる一例について、図10及び図11を用いて説明を行う。
導電膜310は、配線SLとしての機能と、トランジスタ112のソースまたはドレインとしての機能とを有する。導電膜312は、トランジスタ112のソースまたはドレインとしての機能を有する。導電膜313は、容量線としての機能を有する。
本実施の形態においては、本発明の一態様における液晶表示装置を用いた電子機器の一例について、図14を用いて説明を行う。
基板630としては、ガラス基板を用いた。次に、基板630に接して所望の領域に遮光膜632を形成した。遮光膜632としては、スピンコート法により、厚さ600nmの黒色顔料を含んだ有機樹脂膜を用いた。
基板630としては、ガラス基板を用いた。次に、基板630に接して所望の領域に遮光膜632を形成した。遮光膜632としては、スピンコート法により、厚さ600nmの黒色顔料を含んだ有機樹脂膜を用いた。
102 トランジスタ
111 液晶素子
111a 液晶素子
111b 液晶素子
111c 液晶素子
112 トランジスタ
113 容量素子
120 基板
122 共通電極
124 絶縁層
126 画素電極
130 基板
132 共通電極
134 液晶層
230 パネル
231 画素部
232 駆動回路
233 駆動回路
240 液晶表示装置
241 コントローラ
242 入力装置
243 CPU
244 画像処理回路
245 画像メモリ
246 データ
247 電源回路
302 基板
304 導電膜
306 絶縁膜
307 酸化物半導体膜
308 酸化物半導体膜
309 酸化物半導体膜
310 導電膜
312 導電膜
313 導電膜
314 絶縁膜
316 絶縁膜
318 共通電極
320 絶縁膜
321 絶縁膜
322 画素電極
324 配向膜
330 基板
332 遮光膜
334 有色膜
336 絶縁膜
338 共通電極
340 配向膜
350 液晶層
352 酸化物半導体膜
354 電極
360 開口部
362 開口部
364 開口部
366 開口部
602 基板
604 導電膜
606 絶縁膜
608 酸化物半導体膜
610 導電膜
612 導電膜
614 絶縁膜
616 絶縁膜
618 共通電極
620 絶縁膜
622 画素電極
624 配向膜
630 基板
632 遮光膜
634 有色膜
636 絶縁膜
638 共通電極
640 配向膜
642 電極
650 液晶層
712 トランジスタ
720 液晶表示装置
730 液晶表示装置
802 基板
804a 電極
804b 電極
814 絶縁膜
821 絶縁膜
822a 画素電極
822b 画素電極
830 基板
838 電極
850 液晶層
854a 電極
854b 電極
856 絶縁膜
5001 筐体
5002 筐体
5003 表示部
5004 表示部
5005 マイクロホン
5006 スピーカー
5007 操作キー
5008 スタイラス
5201 筐体
5202 表示部
5203 支持台
5401 筐体
5402 表示部
5403 キーボード
5404 ポインティングデバイス
5601 筐体
5602 筐体
5603 表示部
5604 表示部
5605 接続部
5606 操作キー
5801 筐体
5802 筐体
5803 表示部
5804 操作キー
5805 レンズ
5806 接続部
5901 筐体
5902 表示部
5903 カメラ
5904 スピーカー
5905 ボタン
5906 外部接続部
5907 マイク
Claims (4)
- 酸化物半導体膜をチャネル形成領域に含むトランジスタと、
前記トランジスタと電気的に接続される画素電極と、
前記画素電極と接する絶縁層と、
前記絶縁層と接する第1の共通電極と、を有する第1の基板と、
前記第1の基板と対峙するように配置され、第2の共通電極を有する第2の基板と、
前記第1の基板と前記第2の基板に挟持される液晶層と、を有し、
前記液晶層が、ネガ型の液晶材料を用い、
前記液晶材料の固有抵抗率が1.0×1013Ω・cm以上1.0×1016Ω・cm以下である
ことを特徴とする液晶表示装置。 - 酸化物半導体膜をチャネル形成領域に含むトランジスタと、
前記トランジスタと電気的に接続される画素電極と、
前記画素電極と接する絶縁層と、
前記絶縁層と接する第1の共通電極と、を有する第1の基板と、
前記第1の基板と対峙するように配置され、第2の共通電極を有する第2の基板と、
前記第1の基板と前記第2の基板に挟持される液晶層と、を有し、
前記第1の共通電極と前記第2の共通電極が、各々独立した電源線に接続され、
前記液晶層が、ネガ型の液晶材料を用い、
前記液晶材料の固有抵抗率が1.0×1013Ω・cm以上1.0×1016Ω・cm以下である
ことを特徴とする液晶表示装置。 - 請求項1または請求項2において、
前記酸化物半導体膜は、In、Ga、及びZnを含む
ことを特徴とする液晶表示装置。 - 請求項1または請求項2において、
前記第1の共通電極と前記画素電極との電位差より、前記第1の共通電極と前記第2の共通電極との電位差が小さい
ことを特徴とする液晶表示装置。
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JP2014103390A JP2015043070A (ja) | 2013-05-21 | 2014-05-19 | 液晶表示装置 |
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JP2013106681 | 2013-05-21 | ||
JP2013106681 | 2013-05-21 | ||
JP2013126895 | 2013-06-17 | ||
JP2013126895 | 2013-06-17 | ||
JP2013153362 | 2013-07-24 | ||
JP2013153362 | 2013-07-24 | ||
JP2014103390A JP2015043070A (ja) | 2013-05-21 | 2014-05-19 | 液晶表示装置 |
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JP2018186806A Division JP2019012285A (ja) | 2013-05-21 | 2018-10-01 | 液晶表示装置 |
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JP2014103390A Withdrawn JP2015043070A (ja) | 2013-05-21 | 2014-05-19 | 液晶表示装置 |
JP2018186806A Withdrawn JP2019012285A (ja) | 2013-05-21 | 2018-10-01 | 液晶表示装置 |
JP2020080910A Active JP7072601B2 (ja) | 2013-05-21 | 2020-05-01 | 液晶表示装置 |
JP2022077619A Active JP7402269B2 (ja) | 2013-05-21 | 2022-05-10 | 半導体装置、電子機器 |
JP2023207718A Pending JP2024037827A (ja) | 2013-05-21 | 2023-12-08 | 表示装置、電子機器 |
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JP2022077619A Active JP7402269B2 (ja) | 2013-05-21 | 2022-05-10 | 半導体装置、電子機器 |
JP2023207718A Pending JP2024037827A (ja) | 2013-05-21 | 2023-12-08 | 表示装置、電子機器 |
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Cited By (4)
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WO2016017483A1 (ja) * | 2014-07-29 | 2016-02-04 | シャープ株式会社 | 液晶表示装置 |
JP2017116819A (ja) * | 2015-12-25 | 2017-06-29 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
US10558092B2 (en) | 2016-03-15 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device, module, and electronic device |
JP2020518868A (ja) * | 2017-08-02 | 2020-06-25 | 江門億都半導体有限公司Jiangmen Yeebo Semiconductor Co.,Ltd. | 低消費電力の自動感光式サングラス |
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US10008167B2 (en) | 2015-03-03 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for driving semiconductor device, and program |
KR102619052B1 (ko) | 2015-06-15 | 2023-12-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
JP2018013765A (ja) | 2016-04-28 | 2018-01-25 | 株式会社半導体エネルギー研究所 | 電子デバイス |
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Also Published As
Publication number | Publication date |
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JP7402269B2 (ja) | 2023-12-20 |
JP2019012285A (ja) | 2019-01-24 |
US20140347588A1 (en) | 2014-11-27 |
JP2022122874A (ja) | 2022-08-23 |
US10416504B2 (en) | 2019-09-17 |
JP2020126269A (ja) | 2020-08-20 |
US20190339577A1 (en) | 2019-11-07 |
JP2024037827A (ja) | 2024-03-19 |
JP7072601B2 (ja) | 2022-05-20 |
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