TWI659254B - 驅動基板及顯示裝置 - Google Patents
驅動基板及顯示裝置 Download PDFInfo
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- TWI659254B TWI659254B TW106136423A TW106136423A TWI659254B TW I659254 B TWI659254 B TW I659254B TW 106136423 A TW106136423 A TW 106136423A TW 106136423 A TW106136423 A TW 106136423A TW I659254 B TWI659254 B TW I659254B
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- oxide semiconductor
- resistor
- substrate
- protective layer
- semiconductor layer
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- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 239000010410 layer Substances 0.000 claims abstract description 106
- 239000004065 semiconductor Substances 0.000 claims abstract description 69
- 239000011241 protective layer Substances 0.000 claims abstract description 62
- 239000000463 material Substances 0.000 claims description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- 239000011787 zinc oxide Substances 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- ZBFOLPMOGPIUGP-UHFFFAOYSA-N dizinc;oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Zn+2].[Zn+2] ZBFOLPMOGPIUGP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 claims description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000010408 film Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- G09G2300/00—Aspects of the constitution of display devices
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Abstract
一種驅動基板,包括一基材、至少一主動元件、一電阻、一第一保護層以及一第二保護層。其中具有一氧化物半導體層的主動元件與耦接至主動元件的電阻配置於基材上。第一保護層覆蓋主動元件,其中部分第一保護層直接接觸氧化物半導體層而使氧化物半導體層具有一第一導電率。第二保護層覆蓋第一保護層與電阻,其中部分第二保護層直接接觸電阻而使電阻具有一第二導電率。第一導電率不同於第二導電率。
Description
本發明是有關於一種基板及電子裝置,且特別是有關於一種驅動基板以及具有上述驅動基板的顯示裝置。
一般來說,非晶矽薄膜電晶體在高電壓操作環境下容易造成臨界電壓飄移與高漏電流(off current)的情形,且非晶矽的分子結構排列是沒有順序與方向性的,會使得非晶矽薄膜電晶體中通道層的電子移動受到影響,進而使載子遷移率(mobility)下降。相較之下,氧化物半導體薄膜電晶體具有較優異的耐高電壓穩定性與較好的載子遷移率。因此,氧化物半導體薄膜電晶體有潛力成為於高電壓操作環境下顯示裝置的驅動元件。
然而,氧化物半導體薄膜電晶體雖具有良好的耐高電壓特性,卻不耐高電流(高熱),造成於高電壓操作環境下,氧化物半導體薄膜電晶體因無法承受高電流而導致毀損,進而使得顯示裝置無法正常使用。因此,目前大都是將氧化物半導體薄膜電晶體的通道層長度拉大以降低電流負載,然而此種方法伴隨而來的就是寄生電容的增加,使得產生嚴重的訊號延遲與較高的功率損耗。
本發明提供一種驅動基板,其具有與主動元件彼此耦接的電阻,可有效地防止主動元件的內部因負載高電流而造成主動元件燒毀,同時可改善寄生電容造成訊號延遲與高功耗的問題。
本發明提供一種顯示裝置,其包括上述的驅動基板,具有較佳地穩定性與較長的使用壽命。
本發明的驅動基板,其包括一基材、至少一主動元件、一電阻、一第一保護層以及一第二保護層。主動元件配置於基材上且包括一氧化物半導體層。電阻配置於基材上且耦接至主動元件。第一保護層覆蓋主動元件,其中部分第一保護層直接接觸氧化物半導體層而使氧化物半導體層具有一第一導電率。第二保護層覆蓋第一保護層與電阻,其中部分第二保護層直接接觸電阻而使電阻具有一第二導電率。第一導電率不同於第二導電率。
在本發明的一實施例中,上述的主動元件更包括一閘極、一閘絕緣層、一源極以及一汲極。閘絕緣層配置於閘極與氧化物半導體層之間。源極以及汲極配置於氧化物半導體層的同一側上,且氧化物半導體層的一部分暴露於源極與汲極之間。
在本發明的一實施例中,上述的氧化物半導體層位於閘極與基材之間。源極與汲極位於閘絕緣層與基材之間。
在本發明的一實施例中,上述的電阻與源極或汲極電性串聯。
在本發明的一實施例中,上述的第一保護層於基材上的正投影不重疊電阻於基材上的正投影。
在本發明的一實施例中,上述的第一保護層的材質不同於第二保護層的材質。
在本發明的一實施例中,上述的第一保護層的材質為氧化矽,而第二保護層的材質為氮化矽。
在本發明的一實施例中,上述的氧化物半導體層的材質選自銦鎵鋅氧化物、銦鋅氧化物、銦氧化物、鋅氧化物、銦鈦氧化物或鋅鈦氧化物。
在本發明的一實施例中,上述的電阻與氧化物半導體層屬於同一膜層。
本發明的顯示裝置,其包括一驅動基板以及一顯示介質。驅動基板包括一基材、至少一主動元件、一電阻、一第一保護層以及一第二保護層。主動元件配置於基材上且包括一氧化物半導體層。電阻配置於基材上且耦接至主動元件。第一保護層覆蓋主動元件,其中部分第一保護層直接接觸氧化物半導體層而使氧化物半導體層具有一第一導電率。第二保護層覆蓋第一保護層與電阻,其中部分第二保護層直接接觸電阻而使電阻具有一第二導電率。第一導電率不同於第二導電率。顯示介質配置於驅動基板上。
在本發明的一實施例中,上述的主動元件更包括一閘極、一閘絕緣層、一源極以及一汲極。閘絕緣層配置於閘極與氧化物半導體層之間。源極以及汲極配置於氧化物半導體層的同一側上,且氧化物半導體層的一部分暴露於源極與汲極之間。
在本發明的一實施例中,上述的電阻與源極或汲極電性串聯。
在本發明的一實施例中,上述的第一保護層於基材上的正投影不重疊電阻於基材上的正投影。
在本發明的一實施例中,上述的第一保護層的材質不同於第二保護層的材質。
在本發明的一實施例中,上述的氧化物半導體層的材質選自銦鎵鋅氧化物、銦鋅氧化物、銦氧化物、鋅氧化物、銦鈦氧化物或鋅鈦氧化物。
在本發明的一實施例中,上述的顯示介質包括一電泳顯示薄膜或一電濕潤顯示薄膜。
在本發明的一實施例中,上述的顯示裝置更包括一平坦層,配置於驅動基板與顯示介質之間。
基於上述,由於本發明的驅動基板的主動元件耦接於電阻,其中第一保護層直接接觸氧化物半導體層而使氧化物半導體層具有第一導電率,且第二保護層直接接觸電阻而使電阻具有第二導電率。藉此,可有效地來限制通過主動元件的電流,以避免在高電壓操作下所伴隨的高電流會燒毀主動元件的情形,且可極小化主動元件的寄生電容,進而改善訊號延遲與高功耗的問題。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
圖1A繪示為本發明的一實施例的一種顯示裝置的局部剖面示意圖。圖1B繪示為圖1A的驅動基板的俯視示意圖。請先參考圖1A,本實施例的顯示裝置10包括一驅動基板100A以及一顯示介質200,其中顯示介質200配置於驅動基板100A上。此處,顯示介質200例如是一電泳顯示薄膜或一電濕潤顯示薄膜,但並不以此為限。如圖1A所示,本實施例的顯示裝置10可更包括一平坦層300,配置於驅動基板100A與顯示介質200之間,用以平坦化驅動基板100A。
詳細來說,請同時參考圖1A與圖1B,本實施例的顯示裝置10的驅動基板100A包括一基材110、至少一主動元件120(圖1A與圖1B中僅示意地繪示一個)、一電阻130、一第一保護層140以及一第二保護層150。主動元件120配置於基材110上且包括一氧化物半導體層128。電阻130配置於基材110上且耦接至主動元件120,其中電阻130與氧化物半導體層128屬於同一膜層。第一保護層140覆蓋主動元件120,其中部分第一保護層140直接接觸氧化物半導體層128而使氧化物半導體層128具有一第一導電率。第二保護層150覆蓋第一保護層140與電阻130,其中部分第二保護層150直接接觸電阻130而使電阻130具有一第二導電率。第一保護層140的材質不同於第二保護層150的材質,且第一導電率不同於第二導電率。
如圖1A與圖1B所示,本實施例的主動元件120包括一閘極122、一閘絕緣層124、一源極126A以及一汲極126B。閘絕緣層124配置於閘極122與氧化物半導體層128之間。源極126A以及汲極126B配置於氧化物半導體層128的同一側上,且氧化物半導體層128的一部分暴露於源極126A與汲極126B之間。具體來說,閘極122以及閘絕緣層124依序地配置於基材110上,且閘絕緣層124完全覆蓋閘極122與基材110。氧化物半導體層128與電阻130為同一膜層且配置於閘絕緣層124上。換句話說,氧化物半導體層128於基材110上的正投影不會重疊於電阻130於基板110上的正投影。此處,氧化物半導體層128與電阻130的材質可選自銦鎵鋅氧化物、銦鋅氧化物、銦氧化物、鋅氧化物、銦鈦氧化物或鋅鈦氧化物等,但不以此為限。
再者,主動元件120的源極126A與汲極126B分別部分覆蓋部分氧化物通道層128且相對地延伸覆蓋至閘絕緣層124上,其中源極126A與汲極126B在氧化物半導體層128上方具有一間距,使得氧化物半導體層128部分暴露於源極126A與汲極126B之間。此處,汲極126B延伸至電阻130,且汲極126B與電阻130電性串聯,但不以此為限。於其他未繪示的實施例中,亦可以是電阻與源極電性串聯,此仍屬於本發明所保護的範圍。由本實施例的閘極122、閘絕緣層124、源極126A以及汲極126B的配置方式可得知,本實施例的主動元件120具體化為底閘極薄膜電晶體,但並不以此為限。
此外,驅動基板100A的第一保護層140覆蓋主動元件120的源極126A、汲極126B以及源極126A與汲極126B所暴露出的氧化物半導體層128,其中部分第一保護層140直接接觸氧化物半導體層128而使氧化物半導體層128具有第一導電率。第二保護層150覆蓋第一保護層140與電阻130,其中部分第二保護層150直接接觸電阻130而使電阻130具有第二導電率。特別是,第一保護層140的材質不同於第二保護層150的材質,且第一導電率不同於第二導電率。此處,第一保護層140的材質例如是氧化矽,而第二保護層150的材質例如是氮化矽,但不以此為限。
在此需說明的是,儘管主動元件120的氧化物半導體層128與電阻130屬於同一膜層,但依據覆蓋於氧化物半導體層128與電阻130上方的保護層具有不同材質,使得氧化物半導體層128與電阻130呈現出不同的電氣特性。舉例來說,由於氧化物半導體層128與第一保護層140(如氧化矽)直接接觸,使得氧化物半導體層128具有第一導電率,其中主動元件120的電阻值例如是10
6~10
13Ω。另外,電阻130與第二保護層150(如氮化矽)直接接觸,使得電阻130具有第二導電率,其中電阻130的電阻值例如1.6×10
5Ω。一般皆知,電阻值與導電率成反比,因此本實施例的第二導電率大於第一導電率,因此可將電阻130視為是一種限流電阻。
由於在高電壓操作環境下勢必伴隨著具有高電流,然而本實施例藉由將主動元件120與電阻130電性串接而使電路中的總電阻增加,進而降低通過主動元件120的電流,可避免主動元件120因負載高電流而導致燒毀的情形。此外,本實施例是透過電阻130來降低通過主動元件120的電流,相較於習知將氧化物半導體薄膜電晶體的通道層長度拉大以降低電流負載而言,本實施例則可避免為了降低高電流流通而以大面積設置通道層的主動元件所產生的寄生電容。
值得一提的是,本實施例並不限定主動元件120的結構型態,雖然於上述的實施例中,主動元件120具體化為底閘極薄膜電晶體。但於其他實施例中,請參考圖2,驅動基板100B的氧化物半導體層128’位於閘極122’與基材110之間,而源極126A’與汲極126B’位於閘絕緣層124’與基材110之間。也就是說,由閘極122’、閘絕緣層124’、源極126A’以及汲極126B’的配置方式可得知,本實施例的主動元件120’具體化為頂閘極薄膜電晶體,此仍屬於本發明所欲保護的範圍。
此外,請再同時參考圖1A與1B,本實施例的驅動基板更包括多條掃描線160、多條資料線170以及多個畫素電極180。每一畫素電極180透過主動元件120分別與其所對應的掃描線160以及資料線170電性連接。也就是說,畫素電極180與主動元件120電性連接,而主動元件120分別與其所對應的掃描線160以及資料線170電性連接。在本發明實施例中,掃描線160耦接於主動元件120的閘極122,資料線170耦接於主動元件120的源極126A,以及畫素電極180耦接於主動元件的汲極126B,但不以此為限。在其他未繪示的實施例中,亦可以是資料線耦接於主動元件的汲極,畫素電極耦接於主動元件的源極。
綜上所述,由於本發明的驅動基板的主動元件電性串接於電阻,且電阻與主動元件的氧化物半導體層屬於同一膜層,其中第一保護層直接接觸氧化物半導體層而使氧化物半導體層具有第一導電率,且第二保護層直接接觸電阻而使電阻具有第二導電率。藉此,可有效地來限制通過主動元件的電流,以避免在高電壓操作下所伴隨的高電流會燒毀主動元件的情形,且可極小化主動元件的寄生電容,進而改善訊號延遲與高功耗的問題。此外,採用本發明的驅動基板的顯示裝置則可具有較佳地穩定性與較長的使用壽命。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
10:顯示裝置 100A、100B:驅動基板 110:基材 120、120’:主動元件 122、122’:閘極 124、124’:閘絕緣層 126A、126A’:源極 126B、126B’:汲極 128、128’:氧化物半導體層 130:電阻 140:第一保護層 150:第二保護層 160:掃描線 170:資料線
180‧‧‧畫素電極
200‧‧‧顯示介質
300‧‧‧平坦層
圖1A繪示為本發明的一實施例的一種顯示裝置的局部剖面示意圖。 圖1B繪示為圖1A的驅動基板的俯視示意圖。 圖2繪示為本發明的另一實施例的一種驅動基板的局部剖面示意圖。
Claims (17)
- 一種驅動基板,包括:一基材;至少一主動元件,配置於該基材上且包括一氧化物半導體層;一電阻,配置於該基材上且耦接至該主動元件;一第一保護層,覆蓋該主動元件,其中部分該第一保護層直接接觸該氧化物半導體層致使該氧化物半導體層具有一第一導電率;以及一第二保護層,覆蓋該第一保護層與該電阻,其中部分該第二保護層直接接觸該電阻致使該電阻具有一第二導電率,該第一導電率不同於該第二導電率。
- 如申請專利範圍第1項所述的驅動基板,其中該主動元件更包括:一閘極;一閘絕緣層,配置於該閘極與該氧化物半導體層之間;以及一源極以及一汲極,配置於該氧化物半導體層的同一側上,且該氧化物半導體層的一部分暴露於該源極與該汲極之間。
- 如申請專利範圍第2項所述的驅動基板,其中該氧化物半導體層位於該閘極與該基材之間,而該源極與該汲極位於該閘絕緣層與該基材之間。
- 如申請專利範圍第2項所述的驅動基板,其中該電阻與該源極或該汲極電性串聯。
- 如申請專利範圍第1項所述的驅動基板,其中該第一保護層於該基材上的正投影不重疊該電阻於該基材上的正投影。
- 如申請專利範圍第1項所述的驅動基板,其中該第一保護層的材質不同於該第二保護層的材質。
- 如申請專利範圍第1項所述的驅動基板,其中該第一保護層的材質為氧化矽,而該第二保護層的材質為氮化矽。
- 如申請專利範圍第1項所述的驅動基板,其中該氧化物半導體層的材質選自銦鎵鋅氧化物、銦鋅氧化物、銦氧化物、鋅氧化物、銦鈦氧化物或鋅鈦氧化物。
- 如申請專利範圍第1項所述的驅動基板,其中該電阻與該氧化物半導體層屬於同一膜層。
- 一種顯示裝置,包括:一驅動基板,包括:一基材;至少一主動元件,配置於該基材上且包括一氧化物半導體層;一電阻,配置於該基材上且耦接至該主動元件;一第一保護層,覆蓋該主動元件,其中部分該第一保護層直接接觸該氧化物半導體層致使該氧化物半導體層具有一第一導電率;以及一第二保護層,覆蓋該第一保護層與該電阻,其中部分該第二保護層直接接觸該電阻致使該電阻具有一第二導電率,該第一導電率不同於該第二導電率;以及一顯示介質,配置於該驅動基板上。
- 如申請專利範圍第10項所述的顯示裝置,其中該主動元件更包括:一閘極;一閘絕緣層,配置於該閘極與該氧化物半導體層之間;以及一源極以及一汲極,配置於該氧化物半導體層的同一側上,且該氧化物半導體層的一部分暴露於該源極與該汲極之間。
- 如申請專利範圍第11項所述的顯示裝置,其中該電阻與該源極或該汲極電性串聯。
- 如申請專利範圍第10項所述的顯示裝置,其中該第一保護層於該基材上的正投影不重疊該電阻於該基材上的正投影。
- 如申請專利範圍第10項所述的顯示裝置,其中該第一保護層的材質不同於該第二保護層的材質。
- 如申請專利範圍第10項所述的顯示裝置,其中該氧化物半導體層的材質選自銦鎵鋅氧化物、銦鋅氧化物、銦氧化物、鋅氧化物、銦鈦氧化物或鋅鈦氧化物。
- 如申請專利範圍第10項所述的顯示裝置,其中該顯示介質包括一電泳顯示薄膜或一電濕潤顯示薄膜。
- 如申請專利範圍第10項所述的顯示裝置,更包括:一平坦層,配置於該驅動基板與該顯示介質之間。
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