JP2015032789A - 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 258
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 235
- 239000004065 semiconductor Substances 0.000 title claims abstract description 225
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 223
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 52
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims description 41
- 230000008569 process Effects 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000005856 abnormality Effects 0.000 abstract description 9
- 230000002093 peripheral effect Effects 0.000 description 19
- 210000000746 body region Anatomy 0.000 description 17
- 238000002513 implantation Methods 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 6
- 238000005336 cracking Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 241000264877 Hippospongia communis Species 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
Description
はじめに、本発明の実施の形態の概要を列挙する。
次に、本発明の実施の形態の詳細について説明する。
図1を参照して、実施の形態1に係る炭化珪素半導体基板10について説明する。本実施の形態に係る炭化珪素半導体基板10は、ベース基板1と、ベース基板1の主面1A上に形成されたエピタキシャル層2とを備え、ベース基板1において主面1Aと反対側に位置する裏面1Bに溝9が形成されている。
Claims (6)
- 外径が100mm以上である主面を有し、単結晶炭化珪素からなるベース基板と、
前記主面上に形成されたエピタキシャル層とを備え、
前記エピタキシャル層において前記ベース基板と対向する面と反対側に位置する主面、および前記ベース基板において前記エピタキシャル層が形成された前記主面と反対側に位置する裏面の少なくともいずれかに溝が形成されている、炭化珪素半導体基板。 - 基板温度が室温であるときの反り量は−100μm以上100μm以下であり、基板温度が400℃であるときの反り量は−1.5mm以上1.5mm以下である、請求項1に記載の炭化珪素半導体基板。
- 前記溝の平面形状は、ストライプ状、格子状、同心円状、ハニカム状からなる群から選択されるいずれか1つを含む、請求項1または請求項2に記載の炭化珪素半導体基板。
- 外径が100mm以上である主面を有し、単結晶炭化珪素からなるベース基板を準備する工程と、
前記主面上にエピタキシャル層を形成する工程と、
前記エピタキシャル層において前記ベース基板と対向する面と反対側に位置する主面、および前記ベース基板において前記エピタキシャル層が形成された前記主面の反対側に位置する裏面の少なくともいずれかに溝を形成する工程とを備える、炭化珪素半導体基板の製造方法。 - 前記溝を形成する工程は、前記エピタキシャル層を形成する工程後に前記エピタキシャル層の前記主面が凹状に反るときには、前記エピタキシャル層の前記主面に前記溝を形成し、前記エピタキシャル層を形成する工程後に前記エピタキシャル層の前記主面が凸状に反るときには前記裏面に前記溝を形成する、請求項4に記載の炭化珪素半導体基板の製造方法。
- 外径が100mm以上である主面を有し、単結晶炭化珪素からなるベース基板を準備する工程と、
前記主面上にエピタキシャル層を形成する工程と、
前記エピタキシャル層において前記ベース基板と対向する面と反対側に位置する主面、および前記ベース基板において前記エピタキシャル層が形成された前記主面の反対側に位置する裏面の少なくともいずれかに溝を形成して、炭化珪素半導体基板を準備する工程と、
前記炭化珪素半導体基板に不純物イオンを注入する工程とを備える、炭化珪素半導体装置の製造方法。
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JP2013163408A JP6197461B2 (ja) | 2013-08-06 | 2013-08-06 | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 |
EP14834945.9A EP3032574A4 (en) | 2013-08-06 | 2014-06-25 | Silicon carbide semiconductor substrate, method for producing same, and method for producing silicon carbide semiconductor device |
PCT/JP2014/066822 WO2015019734A1 (ja) | 2013-08-06 | 2014-06-25 | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 |
US14/910,602 US20160189955A1 (en) | 2013-08-06 | 2014-06-25 | Silicon carbide semiconductor substrate, method for manufacturing silicon carbide semiconductor substrate, and method for manufacturing silicon carbide semiconductor device |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016044115A (ja) * | 2014-08-27 | 2016-04-04 | 三菱電機株式会社 | 炭化珪素エピタキシャルウエハ、炭化珪素半導体装置および炭化珪素エピタキシャルウエハの製造方法 |
JP2016184723A (ja) * | 2015-03-26 | 2016-10-20 | 環球晶圓股▲ふん▼有限公司 | マイクロナノ化チップおよびその製造方法 |
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EP3032574A1 (en) | 2016-06-15 |
WO2015019734A1 (ja) | 2015-02-12 |
JP6197461B2 (ja) | 2017-09-20 |
US20160189955A1 (en) | 2016-06-30 |
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