JP2015012112A - 配線基板 - Google Patents
配線基板 Download PDFInfo
- Publication number
- JP2015012112A JP2015012112A JP2013135844A JP2013135844A JP2015012112A JP 2015012112 A JP2015012112 A JP 2015012112A JP 2013135844 A JP2013135844 A JP 2013135844A JP 2013135844 A JP2013135844 A JP 2013135844A JP 2015012112 A JP2015012112 A JP 2015012112A
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- JP
- Japan
- Prior art keywords
- layer
- thin film
- semiconductor element
- wiring board
- film resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010410 layer Substances 0.000 claims abstract description 126
- 239000004020 conductor Substances 0.000 claims abstract description 68
- 229910000679 solder Inorganic materials 0.000 claims abstract description 42
- 239000010409 thin film Substances 0.000 claims abstract description 36
- 239000011247 coating layer Substances 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 abstract description 61
- 238000009413 insulation Methods 0.000 abstract 1
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- 238000013016 damping Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 229920001187 thermosetting polymer Polymers 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000003365 glass fiber Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920003192 poly(bis maleimide) Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Abstract
Description
主導体層13aと電気的に直列に接続された抵抗体層13bによりダンピング抵抗が形成され、このダンピング抵抗により、配線導体の特性インピーダンスと半導体素子の特性インピーダンスとの相違に起因して発生するノイズが減衰されて半導体素子を正常に作動させることが可能になる。
その結果、主導体層に電気的に直列に接続された薄膜抵抗体層により形成されるダンピング抵抗を有効に作用させることで配線導体の特性インピーダンスと半導体素子の特性インピーダンスとの相違に起因して発生するノイズを減衰し、半導体素子を正常に作動させることができる配線基板を提供することができる。
このような低抵抗材料としては、例えば銅や銀、金、ニッケル、アルミニウム等が例示できるが、加工性や経済性等の観点から銅が好ましい。なお、主導体層3aを形成するには、主導体層3aが例えば銅から成る場合、配線導体2の形成と同じセミアディティブ法を採用することができる。
その結果、主導体層3aに電気的に直列に接続された薄膜抵抗体層3bにより形成されるダンピング抵抗を有効に作用させることで、配線導体2の特性インピーダンスと半導体素子Sの特性インピーダンスとの相違に起因して発生するノイズを減衰し、半導体素子Sを正常に作動させることができる配線基板10を提供することができる。
なお、被覆層3cから露出する薄膜抵抗体層3bの外周部の幅は、10μm以上あることが好ましい。10μm未満であると、被覆層3c上に溶着された半田バンプが被覆層3c以外へ流れ出ることを抑制する効果が小さくなる。
あるいは、上層側の絶縁層1bに形成された配線導体2に接続される下層側の絶縁層1bやコア用絶縁層1a上に形成された接続パッドに、上述の半導体素子接続パッド3と同様の層構成によるダンピング抵抗を設けてもよい。
また、例えば上述した一例では、表層の絶縁層1b上にソルダーレジスト層を形成していない例を示したが、表層の絶縁層1b上にソルダーレジスト層を形成してもよい。
3 接続パッド
3a 主導体層
3b 薄膜抵抗体層
3c 被覆層
10 配線基板
Claims (2)
- 絶縁層の表面に、体積抵抗率が100μΩ・cm以下の低抵抗材料から成り半田濡れ性に優れる主導体層と、体積抵抗率が10Ω・cm以上の高抵抗材料から成り半田濡れ性に劣る薄膜抵抗体層と、半田濡れ性に優れる被覆層とが電気的に直列に接続されるように順次積層された接続パッドを具備して成る配線基板であって、前記薄膜抵抗体層は、前記主導体層の露出する主面を覆っているとともに、該主面の外周部を覆う部分が前記被覆層から露出していることを特徴とする配線基板。
- 前記主導体層が銅から成り、前記薄膜抵抗体層がゲルマニウムから成ることを特徴とする請求項1記載の配線基板。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013135844A JP2015012112A (ja) | 2013-06-28 | 2013-06-28 | 配線基板 |
KR20140077879A KR20150002492A (ko) | 2013-06-28 | 2014-06-25 | 배선 기판 |
CN201410294997.6A CN104254198A (zh) | 2013-06-28 | 2014-06-26 | 布线基板 |
US14/317,657 US9295154B2 (en) | 2013-06-28 | 2014-06-27 | Wiring board |
TW103122225A TW201519715A (zh) | 2013-06-28 | 2014-06-27 | 配線基板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013135844A JP2015012112A (ja) | 2013-06-28 | 2013-06-28 | 配線基板 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2015012112A true JP2015012112A (ja) | 2015-01-19 |
Family
ID=52305033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013135844A Pending JP2015012112A (ja) | 2013-06-28 | 2013-06-28 | 配線基板 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2015012112A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6163671B1 (ja) * | 2016-05-24 | 2017-07-19 | 株式会社野田スクリーン | 中間接続体、中間接続体を備えた半導体装置、および中間接続体の製造方法 |
JP7368696B2 (ja) | 2019-07-31 | 2023-10-25 | 日亜化学工業株式会社 | 発光装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07297540A (ja) * | 1994-04-01 | 1995-11-10 | At & T Corp | バンプicパッケージ用薄膜回路金属システム |
JP2001168484A (ja) * | 1999-12-06 | 2001-06-22 | Nippon Telegr & Teleph Corp <Ntt> | 配線構体及びその形成法 |
JP2013045938A (ja) * | 2011-08-25 | 2013-03-04 | Kyocer Slc Technologies Corp | 配線基板 |
-
2013
- 2013-06-28 JP JP2013135844A patent/JP2015012112A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07297540A (ja) * | 1994-04-01 | 1995-11-10 | At & T Corp | バンプicパッケージ用薄膜回路金属システム |
JP2001168484A (ja) * | 1999-12-06 | 2001-06-22 | Nippon Telegr & Teleph Corp <Ntt> | 配線構体及びその形成法 |
JP2013045938A (ja) * | 2011-08-25 | 2013-03-04 | Kyocer Slc Technologies Corp | 配線基板 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6163671B1 (ja) * | 2016-05-24 | 2017-07-19 | 株式会社野田スクリーン | 中間接続体、中間接続体を備えた半導体装置、および中間接続体の製造方法 |
WO2017203607A1 (ja) * | 2016-05-24 | 2017-11-30 | 株式会社野田スクリーン | 中間接続体、中間接続体を備えた半導体装置、および中間接続体の製造方法 |
CN109075130A (zh) * | 2016-05-24 | 2018-12-21 | 野田士克林股份有限公司 | 中间连接器、包括中间连接器的半导体装置和制造中间连接器的方法 |
US10483182B2 (en) | 2016-05-24 | 2019-11-19 | Noda Screen Co., Ltd. | Intermediate connector, semiconductor device including intermediate connector, and method of manufacturing intermediate connector |
CN109075130B (zh) * | 2016-05-24 | 2019-11-22 | 野田士克林股份有限公司 | 中间连接器、包括中间连接器的半导体装置和制造中间连接器的方法 |
JP7368696B2 (ja) | 2019-07-31 | 2023-10-25 | 日亜化学工業株式会社 | 発光装置 |
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