JP2014505649A5 - - Google Patents
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- Publication number
- JP2014505649A5 JP2014505649A5 JP2013546247A JP2013546247A JP2014505649A5 JP 2014505649 A5 JP2014505649 A5 JP 2014505649A5 JP 2013546247 A JP2013546247 A JP 2013546247A JP 2013546247 A JP2013546247 A JP 2013546247A JP 2014505649 A5 JP2014505649 A5 JP 2014505649A5
- Authority
- JP
- Japan
- Prior art keywords
- trichlorosilane
- reactor
- hydrogen
- disproportionation
- silicon tetrachloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007323 disproportionation reaction Methods 0.000 claims description 62
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 61
- 239000005052 trichlorosilane Substances 0.000 claims description 61
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 47
- 239000001257 hydrogen Substances 0.000 claims description 47
- 229910052739 hydrogen Inorganic materials 0.000 claims description 47
- 239000005049 silicon tetrachloride Substances 0.000 claims description 47
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 36
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 34
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 34
- 238000004821 distillation Methods 0.000 claims description 34
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 34
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 34
- 229910000077 silane Inorganic materials 0.000 claims description 34
- 239000007789 gas Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 31
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 26
- 238000005984 hydrogenation reaction Methods 0.000 claims description 26
- 238000005660 chlorination reaction Methods 0.000 claims description 20
- 238000000926 separation method Methods 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 150000002431 hydrogen Chemical class 0.000 claims description 13
- 239000005046 Chlorosilane Substances 0.000 claims description 8
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000000047 product Substances 0.000 claims 8
- 239000013589 supplement Substances 0.000 claims 2
- 239000007788 liquid Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201061425069P | 2010-12-20 | 2010-12-20 | |
| US61/425,069 | 2010-12-20 | ||
| PCT/US2011/065399 WO2012087795A1 (en) | 2010-12-20 | 2011-12-16 | Production of polycrystalline silicon in substantially closed-loop processes that involve disproportionation operations |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014505649A JP2014505649A (ja) | 2014-03-06 |
| JP2014505649A5 true JP2014505649A5 (enExample) | 2015-01-29 |
| JP5956461B2 JP5956461B2 (ja) | 2016-07-27 |
Family
ID=45478533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013546247A Active JP5956461B2 (ja) | 2010-12-20 | 2011-12-16 | 不均化操作を伴う実質的に閉ループの方法における多結晶シリコンの製造 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US8956584B2 (enExample) |
| EP (1) | EP2654912B1 (enExample) |
| JP (1) | JP5956461B2 (enExample) |
| KR (1) | KR101873923B1 (enExample) |
| CN (1) | CN103260716B (enExample) |
| TW (1) | TWI474976B (enExample) |
| WO (1) | WO2012087795A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101873923B1 (ko) | 2010-12-20 | 2018-08-02 | 썬에디슨, 인크. | 불균화 작업을 포함하는 실질적으로 폐쇄-루프형 방법에서의 다결정 실리콘의 제조 |
| CN105228952B (zh) * | 2013-05-04 | 2016-11-30 | 斯泰克有限责任公司 | 用于硅烷生产的系统和方法 |
| DE102013215011A1 (de) * | 2013-07-31 | 2015-02-05 | Wacker Chemie Ag | Verfahren zur Herstellung von Trichlorsilan |
| CN103449448B (zh) * | 2013-08-23 | 2016-07-06 | 中国恩菲工程技术有限公司 | 用于纯化三氯氢硅的设备 |
| CN103449447B (zh) * | 2013-08-23 | 2016-06-29 | 中国恩菲工程技术有限公司 | 制备三氯氢硅的设备 |
| CN103482630B (zh) * | 2013-08-23 | 2015-12-02 | 中国恩菲工程技术有限公司 | 制备多晶硅的方法 |
| CN103449440B (zh) * | 2013-08-23 | 2015-04-01 | 中国恩菲工程技术有限公司 | 制备多晶硅的设备 |
| DE102014007767B4 (de) * | 2014-05-21 | 2025-08-28 | Christian Bauch | Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan |
| US10252916B2 (en) * | 2014-09-04 | 2019-04-09 | Corner Star Limited | Methods for separating halosilanes |
| US20170297916A1 (en) * | 2014-10-14 | 2017-10-19 | Sitec Gmbh | Distillation process |
| US11440803B2 (en) | 2016-12-14 | 2022-09-13 | Wacker Chemie Ag | Process for preparing polycrystalline silicon |
| WO2019068336A1 (de) * | 2017-10-05 | 2019-04-11 | Wacker Chemie Ag | Verfahren zur herstellung von chlorsilanen unter verwendung eines katalysators ausgewählt aus der gruppe co, mo, w |
| JP6884880B2 (ja) * | 2018-02-08 | 2021-06-09 | ワッカー ケミー アクチエンゲゼルシャフトＷａｃｋｅｒ Ｃｈｅｍｉｅ ＡＧ | 冶金シリコンの分類方法 |
| US12162763B2 (en) * | 2019-01-22 | 2024-12-10 | Tokuyama Corporation | Method for producing purified chlorosilanes |
| CN112520697A (zh) * | 2020-12-04 | 2021-03-19 | 新疆东方希望新能源有限公司 | 一种采用stc循环喷淋吸收氯化氢的方法 |
| CN116216723A (zh) * | 2023-03-16 | 2023-06-06 | 内蒙古鑫元硅材料科技有限公司 | 一种纳米硅和颗粒硅的联产工艺 |
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| US4092446A (en) * | 1974-07-31 | 1978-05-30 | Texas Instruments Incorporated | Process of refining impure silicon to produce purified electronic grade silicon |
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| FR2532293A1 (fr) * | 1982-08-31 | 1984-03-02 | Rhone Poulenc Spec Chim | Procede continu de preparation de silane |
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| DE10017168A1 (de) | 2000-04-07 | 2001-10-11 | Bayer Ag | Verfahren und Anlage zur Herstellung von Silan |
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| KR101538168B1 (ko) * | 2007-11-30 | 2015-07-20 | 미쓰비시 마테리알 가부시키가이샤 | 전환 반응 가스의 분리 회수 방법 |
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| JP5375394B2 (ja) * | 2009-07-16 | 2013-12-25 | ヤマハ株式会社 | 磁気データ処理装置、磁気データ処理方法および磁気データ処理プログラム |
| WO2011090689A1 (en) | 2009-12-29 | 2011-07-28 | Memc Electronic Materials, Inc. | Methods for reducing the deposition of silicon on reactor walls using peripheral silicon tetrachloride |
| KR101873923B1 (ko) * | 2010-12-20 | 2018-08-02 | 썬에디슨, 인크. | 불균화 작업을 포함하는 실질적으로 폐쇄-루프형 방법에서의 다결정 실리콘의 제조 |
-
2011
- 2011-12-16 KR KR1020137015835A patent/KR101873923B1/ko active Active
- 2011-12-16 JP JP2013546247A patent/JP5956461B2/ja active Active
- 2011-12-16 US US13/328,029 patent/US8956584B2/en active Active
- 2011-12-16 WO PCT/US2011/065399 patent/WO2012087795A1/en not_active Ceased
- 2011-12-16 EP EP11808477.1A patent/EP2654912B1/en active Active
- 2011-12-16 US US13/328,030 patent/US8715597B2/en active Active
- 2011-12-16 CN CN201180061070.2A patent/CN103260716B/zh active Active
- 2011-12-20 TW TW100147559A patent/TWI474976B/zh active
-
2014
- 2014-12-24 US US14/582,256 patent/US10407309B2/en active Active
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