JP2013540095A5 - - Google Patents
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- Publication number
- JP2013540095A5 JP2013540095A5 JP2013534917A JP2013534917A JP2013540095A5 JP 2013540095 A5 JP2013540095 A5 JP 2013540095A5 JP 2013534917 A JP2013534917 A JP 2013534917A JP 2013534917 A JP2013534917 A JP 2013534917A JP 2013540095 A5 JP2013540095 A5 JP 2013540095A5
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- trichlorosilane
- gas
- silicon tetrachloride
- hydrogen chloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims description 96
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 88
- 239000005052 trichlorosilane Substances 0.000 claims description 88
- 239000001257 hydrogen Substances 0.000 claims description 83
- 229910052739 hydrogen Inorganic materials 0.000 claims description 83
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 77
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 69
- 239000005049 silicon tetrachloride Substances 0.000 claims description 69
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 66
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 66
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 43
- 238000005660 chlorination reaction Methods 0.000 claims description 29
- 238000000746 purification Methods 0.000 claims description 22
- 238000005984 hydrogenation reaction Methods 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 238000000926 separation method Methods 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 150000002431 hydrogen Chemical class 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 8
- 239000000460 chlorine Substances 0.000 claims description 7
- 238000004821 distillation Methods 0.000 claims description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims 10
- 239000010703 silicon Substances 0.000 claims 10
- 239000012535 impurity Substances 0.000 claims 6
- 238000004064 recycling Methods 0.000 claims 4
- 238000000354 decomposition reaction Methods 0.000 claims 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000013589 supplement Substances 0.000 description 4
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/910,553 US8449848B2 (en) | 2010-10-22 | 2010-10-22 | Production of polycrystalline silicon in substantially closed-loop systems |
| US12/910,540 | 2010-10-22 | ||
| US12/910,540 US20120100061A1 (en) | 2010-10-22 | 2010-10-22 | Production of Polycrystalline Silicon in Substantially Closed-loop Processes |
| US12/910,553 | 2010-10-22 | ||
| PCT/US2011/052691 WO2012054170A1 (en) | 2010-10-22 | 2011-09-22 | Production of polycrystalline silicon in substantially closed-loop processes and systems |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013540095A JP2013540095A (ja) | 2013-10-31 |
| JP2013540095A5 true JP2013540095A5 (enExample) | 2014-11-06 |
| JP5946835B2 JP5946835B2 (ja) | 2016-07-06 |
Family
ID=45975555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013534917A Active JP5946835B2 (ja) | 2010-10-22 | 2011-09-22 | 実質的に閉ループの方法およびシステムにおける多結晶シリコンの製造 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP2630081B1 (enExample) |
| JP (1) | JP5946835B2 (enExample) |
| KR (1) | KR101948332B1 (enExample) |
| CN (2) | CN103153855A (enExample) |
| BR (1) | BR112013008586A2 (enExample) |
| TW (2) | TW201329280A (enExample) |
| WO (1) | WO2012054170A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101452354B1 (ko) * | 2014-01-24 | 2014-10-22 | 한화케미칼 주식회사 | 폐가스의 정제방법 및 정제장치 |
| KR101515117B1 (ko) * | 2014-01-24 | 2015-04-24 | 한화케미칼 주식회사 | 폐가스의 정제방법 및 정제장치 |
| MY195545A (en) | 2014-01-24 | 2023-01-31 | Hanwha Chemical Corp | Purification Method And Purification Apparatus For Off-Gas |
| CN104003402B (zh) * | 2014-05-30 | 2016-08-24 | 中国恩菲工程技术有限公司 | 三氯氢硅的提纯方法 |
| KR102009929B1 (ko) * | 2015-09-15 | 2019-08-12 | 주식회사 엘지화학 | 트리클로로실란 제조방법 |
| KR20180136941A (ko) * | 2016-04-21 | 2018-12-26 | 가부시끼가이샤 도꾸야마 | 금속 분말의 제조 방법 |
| DE102017125232A1 (de) * | 2017-10-27 | 2019-05-02 | Nexwafe Gmbh | Verfahren und Vorrichtung zur kontinuierlichen Gasphasenabscheidung von Silizium auf Substraten |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4092446A (en) * | 1974-07-31 | 1978-05-30 | Texas Instruments Incorporated | Process of refining impure silicon to produce purified electronic grade silicon |
| GB2028289B (en) * | 1978-08-18 | 1982-09-02 | Schumacher Co J C | Producing silicon |
| US4676967A (en) | 1978-08-23 | 1987-06-30 | Union Carbide Corporation | High purity silane and silicon production |
| DE3024319C2 (de) * | 1980-06-27 | 1983-07-21 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Kontinuierliches Verfahren zur Herstellung von Trichlorsilan |
| US4526769A (en) | 1983-07-18 | 1985-07-02 | Motorola, Inc. | Trichlorosilane production process |
| US5871705A (en) | 1996-09-19 | 1999-02-16 | Tokuyama Corporation | Process for producing trichlorosilane |
| JPH1149508A (ja) * | 1997-06-03 | 1999-02-23 | Tokuyama Corp | 多結晶シリコンの廃棄物の少ない製造方法 |
| US6277194B1 (en) * | 1999-10-21 | 2001-08-21 | Applied Materials, Inc. | Method for in-situ cleaning of surfaces in a substrate processing chamber |
| NO20033207D0 (no) * | 2002-07-31 | 2003-07-15 | Per Kristian Egeberg | Fremgangsmåte og reaktor for fremstilling av höyrent silisium, samt anvendelse av fremgangsmåten og reaktoren ved fremstilling av höyrentsilisium fra uraffinert silisium |
| WO2007120871A2 (en) * | 2006-04-13 | 2007-10-25 | Cabot Corporation | Production of silicon through a closed-loop process |
| US7935327B2 (en) * | 2006-08-30 | 2011-05-03 | Hemlock Semiconductor Corporation | Silicon production with a fluidized bed reactor integrated into a siemens-type process |
| JP5435188B2 (ja) * | 2006-11-14 | 2014-03-05 | 三菱マテリアル株式会社 | 多結晶シリコンの製造方法および多結晶シリコン製造設備 |
| CN101497442B (zh) * | 2008-01-31 | 2012-07-04 | 桑中生 | 一种多晶硅的制备方法 |
| CN102083522B (zh) * | 2008-06-30 | 2014-03-26 | Memc电子材料有限公司 | 流化床反应器系统及减少硅沉积在反应器壁上的方法 |
| US8187361B2 (en) * | 2009-07-02 | 2012-05-29 | America Air Liquide, Inc. | Effluent gas recovery system in polysilicon and silane plants |
| CN102030329B (zh) * | 2009-09-29 | 2012-10-03 | 重庆大全新能源有限公司 | 一种多晶硅生产装置及工艺 |
| DE102010000981A1 (de) * | 2010-01-18 | 2011-07-21 | Evonik Degussa GmbH, 45128 | Closed loop-Verfahren zur Herstellung von Trichlorsilan aus metallurgischem Silicium |
| CN102180467B (zh) * | 2010-12-24 | 2012-12-26 | 江苏中能硅业科技发展有限公司 | Gcl法多晶硅生产方法 |
-
2011
- 2011-09-22 CN CN201180049322XA patent/CN103153855A/zh active Pending
- 2011-09-22 JP JP2013534917A patent/JP5946835B2/ja active Active
- 2011-09-22 WO PCT/US2011/052691 patent/WO2012054170A1/en not_active Ceased
- 2011-09-22 BR BR112013008586A patent/BR112013008586A2/pt not_active IP Right Cessation
- 2011-09-22 EP EP11761811.6A patent/EP2630081B1/en active Active
- 2011-09-22 KR KR1020137010094A patent/KR101948332B1/ko active Active
- 2011-09-22 CN CN201710761183.2A patent/CN107555438A/zh active Pending
- 2011-10-04 TW TW102107553A patent/TW201329280A/zh unknown
- 2011-10-04 TW TW100135943A patent/TWI403610B/zh active
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