KR101948332B1 - 실질적인 폐쇄 루프 공정 및 시스템에 의한 다결정질 실리콘의 제조 - Google Patents

실질적인 폐쇄 루프 공정 및 시스템에 의한 다결정질 실리콘의 제조 Download PDF

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KR101948332B1
KR101948332B1 KR1020137010094A KR20137010094A KR101948332B1 KR 101948332 B1 KR101948332 B1 KR 101948332B1 KR 1020137010094 A KR1020137010094 A KR 1020137010094A KR 20137010094 A KR20137010094 A KR 20137010094A KR 101948332 B1 KR101948332 B1 KR 101948332B1
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hydrogen
trichlorosilane
silicon
delete delete
gas
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KR20130138357A (ko
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사티시 부사라푸
유에 후앙
푸니트 굽타
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코너 스타 리미티드
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Priority claimed from US12/910,553 external-priority patent/US8449848B2/en
Priority claimed from US12/910,540 external-priority patent/US20120100061A1/en
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C01B33/039—Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020137010094A 2010-10-22 2011-09-22 실질적인 폐쇄 루프 공정 및 시스템에 의한 다결정질 실리콘의 제조 Active KR101948332B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/910,553 US8449848B2 (en) 2010-10-22 2010-10-22 Production of polycrystalline silicon in substantially closed-loop systems
US12/910,540 2010-10-22
US12/910,553 2010-10-22
US12/910,540 US20120100061A1 (en) 2010-10-22 2010-10-22 Production of Polycrystalline Silicon in Substantially Closed-loop Processes
PCT/US2011/052691 WO2012054170A1 (en) 2010-10-22 2011-09-22 Production of polycrystalline silicon in substantially closed-loop processes and systems

Publications (2)

Publication Number Publication Date
KR20130138357A KR20130138357A (ko) 2013-12-18
KR101948332B1 true KR101948332B1 (ko) 2019-02-14

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KR1020137010094A Active KR101948332B1 (ko) 2010-10-22 2011-09-22 실질적인 폐쇄 루프 공정 및 시스템에 의한 다결정질 실리콘의 제조

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EP (1) EP2630081B1 (enExample)
JP (1) JP5946835B2 (enExample)
KR (1) KR101948332B1 (enExample)
CN (2) CN107555438A (enExample)
BR (1) BR112013008586A2 (enExample)
TW (2) TW201329280A (enExample)
WO (1) WO2012054170A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101515117B1 (ko) * 2014-01-24 2015-04-24 한화케미칼 주식회사 폐가스의 정제방법 및 정제장치
KR101452354B1 (ko) * 2014-01-24 2014-10-22 한화케미칼 주식회사 폐가스의 정제방법 및 정제장치
WO2015111886A1 (ko) * 2014-01-24 2015-07-30 한화케미칼 주식회사 폐가스의 정제방법 및 정제장치
CN104003402B (zh) * 2014-05-30 2016-08-24 中国恩菲工程技术有限公司 三氯氢硅的提纯方法
KR102009929B1 (ko) * 2015-09-15 2019-08-12 주식회사 엘지화학 트리클로로실란 제조방법
US10953469B2 (en) * 2016-04-21 2021-03-23 Tokuyama Corporation Method of producing metal powder
DE102017125232A1 (de) * 2017-10-27 2019-05-02 Nexwafe Gmbh Verfahren und Vorrichtung zur kontinuierlichen Gasphasenabscheidung von Silizium auf Substraten

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4092446A (en) * 1974-07-31 1978-05-30 Texas Instruments Incorporated Process of refining impure silicon to produce purified electronic grade silicon
GB2028289B (en) * 1978-08-18 1982-09-02 Schumacher Co J C Producing silicon
US4676967A (en) 1978-08-23 1987-06-30 Union Carbide Corporation High purity silane and silicon production
DE3024319C2 (de) * 1980-06-27 1983-07-21 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Kontinuierliches Verfahren zur Herstellung von Trichlorsilan
US4526769A (en) 1983-07-18 1985-07-02 Motorola, Inc. Trichlorosilane production process
US5871705A (en) 1996-09-19 1999-02-16 Tokuyama Corporation Process for producing trichlorosilane
JPH1149508A (ja) * 1997-06-03 1999-02-23 Tokuyama Corp 多結晶シリコンの廃棄物の少ない製造方法
US6277194B1 (en) * 1999-10-21 2001-08-21 Applied Materials, Inc. Method for in-situ cleaning of surfaces in a substrate processing chamber
NO20033207D0 (no) * 2002-07-31 2003-07-15 Per Kristian Egeberg Fremgangsmåte og reaktor for fremstilling av höyrent silisium, samt anvendelse av fremgangsmåten og reaktoren ved fremstilling av höyrentsilisium fra uraffinert silisium
CN101460398B (zh) * 2006-04-13 2012-08-29 卡伯特公司 通过闭合环路方法生产硅
US7935327B2 (en) * 2006-08-30 2011-05-03 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor integrated into a siemens-type process
JP5435188B2 (ja) * 2006-11-14 2014-03-05 三菱マテリアル株式会社 多結晶シリコンの製造方法および多結晶シリコン製造設備
CN101497442B (zh) * 2008-01-31 2012-07-04 桑中生 一种多晶硅的制备方法
SG192438A1 (en) * 2008-06-30 2013-08-30 Memc Electronic Materials Fluidized bed reactor systems and methods for reducing the deposition of silicon on reactor walls
US8187361B2 (en) * 2009-07-02 2012-05-29 America Air Liquide, Inc. Effluent gas recovery system in polysilicon and silane plants
CN102030329B (zh) * 2009-09-29 2012-10-03 重庆大全新能源有限公司 一种多晶硅生产装置及工艺
DE102010000981A1 (de) * 2010-01-18 2011-07-21 Evonik Degussa GmbH, 45128 Closed loop-Verfahren zur Herstellung von Trichlorsilan aus metallurgischem Silicium
CN102180467B (zh) * 2010-12-24 2012-12-26 江苏中能硅业科技发展有限公司 Gcl法多晶硅生产方法

Also Published As

Publication number Publication date
KR20130138357A (ko) 2013-12-18
JP5946835B2 (ja) 2016-07-06
JP2013540095A (ja) 2013-10-31
CN107555438A (zh) 2018-01-09
TWI403610B (zh) 2013-08-01
TW201329280A (zh) 2013-07-16
BR112013008586A2 (pt) 2017-07-25
TW201221685A (en) 2012-06-01
WO2012054170A1 (en) 2012-04-26
CN103153855A (zh) 2013-06-12
EP2630081B1 (en) 2016-04-20
EP2630081A1 (en) 2013-08-28

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