KR101873923B1 - 불균화 작업을 포함하는 실질적으로 폐쇄-루프형 방법에서의 다결정 실리콘의 제조 - Google Patents

불균화 작업을 포함하는 실질적으로 폐쇄-루프형 방법에서의 다결정 실리콘의 제조 Download PDF

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KR101873923B1
KR101873923B1 KR1020137015835A KR20137015835A KR101873923B1 KR 101873923 B1 KR101873923 B1 KR 101873923B1 KR 1020137015835 A KR1020137015835 A KR 1020137015835A KR 20137015835 A KR20137015835 A KR 20137015835A KR 101873923 B1 KR101873923 B1 KR 101873923B1
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trichlorosilane
hydrogen
reactor
disproportionation
silane
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KR20140004103A (ko
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푸닛 굽타
유에 후앙
사티쉬 부사라푸
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썬에디슨, 인크.
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020137015835A 2010-12-20 2011-12-16 불균화 작업을 포함하는 실질적으로 폐쇄-루프형 방법에서의 다결정 실리콘의 제조 Active KR101873923B1 (ko)

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Application Number Priority Date Filing Date Title
US201061425069P 2010-12-20 2010-12-20
US61/425,069 2010-12-20
PCT/US2011/065399 WO2012087795A1 (en) 2010-12-20 2011-12-16 Production of polycrystalline silicon in substantially closed-loop processes that involve disproportionation operations

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KR20140004103A KR20140004103A (ko) 2014-01-10
KR101873923B1 true KR101873923B1 (ko) 2018-08-02

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US (3) US8956584B2 (enExample)
EP (1) EP2654912B1 (enExample)
JP (1) JP5956461B2 (enExample)
KR (1) KR101873923B1 (enExample)
CN (1) CN103260716B (enExample)
TW (1) TWI474976B (enExample)
WO (1) WO2012087795A1 (enExample)

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CN105228952B (zh) * 2013-05-04 2016-11-30 斯泰克有限责任公司 用于硅烷生产的系统和方法
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CN103449448B (zh) * 2013-08-23 2016-07-06 中国恩菲工程技术有限公司 用于纯化三氯氢硅的设备
CN103449447B (zh) * 2013-08-23 2016-06-29 中国恩菲工程技术有限公司 制备三氯氢硅的设备
CN103482630B (zh) * 2013-08-23 2015-12-02 中国恩菲工程技术有限公司 制备多晶硅的方法
CN103449440B (zh) * 2013-08-23 2015-04-01 中国恩菲工程技术有限公司 制备多晶硅的设备
DE102014007767B4 (de) * 2014-05-21 2025-08-28 Christian Bauch Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan
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CN112520697A (zh) * 2020-12-04 2021-03-19 新疆东方希望新能源有限公司 一种采用stc循环喷淋吸收氯化氢的方法
CN116216723A (zh) * 2023-03-16 2023-06-06 内蒙古鑫元硅材料科技有限公司 一种纳米硅和颗粒硅的联产工艺

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JP2014505649A (ja) 2014-03-06
US10407309B2 (en) 2019-09-10
CN103260716A (zh) 2013-08-21
WO2012087795A1 (en) 2012-06-28
US8715597B2 (en) 2014-05-06
US20120189501A1 (en) 2012-07-26
CN103260716B (zh) 2015-10-14
TW201242896A (en) 2012-11-01
EP2654912B1 (en) 2016-04-20
US20150110702A1 (en) 2015-04-23
US20120189527A1 (en) 2012-07-26
KR20140004103A (ko) 2014-01-10
JP5956461B2 (ja) 2016-07-27
TWI474976B (zh) 2015-03-01
EP2654912A1 (en) 2013-10-30
US8956584B2 (en) 2015-02-17

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