CN103260716A - 在涉及歧化操作的基本闭环方法中制备多晶硅 - Google Patents
在涉及歧化操作的基本闭环方法中制备多晶硅 Download PDFInfo
- Publication number
- CN103260716A CN103260716A CN2011800610702A CN201180061070A CN103260716A CN 103260716 A CN103260716 A CN 103260716A CN 2011800610702 A CN2011800610702 A CN 2011800610702A CN 201180061070 A CN201180061070 A CN 201180061070A CN 103260716 A CN103260716 A CN 103260716A
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- China
- Prior art keywords
- hydrogen
- trichlorosilane
- reactor
- disproportionation
- silicon tetrachloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007323 disproportionation reaction Methods 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims abstract description 48
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims abstract description 95
- 239000005052 trichlorosilane Substances 0.000 claims abstract description 95
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910000077 silane Inorganic materials 0.000 claims abstract description 66
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052739 hydrogen Inorganic materials 0.000 claims description 85
- 239000001257 hydrogen Substances 0.000 claims description 83
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 82
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 76
- 239000005049 silicon tetrachloride Substances 0.000 claims description 76
- 239000007789 gas Substances 0.000 claims description 70
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 69
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 67
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 66
- 229920005591 polysilicon Polymers 0.000 claims description 39
- 238000005984 hydrogenation reaction Methods 0.000 claims description 29
- 238000005660 chlorination reaction Methods 0.000 claims description 28
- 238000012546 transfer Methods 0.000 claims description 27
- 238000002360 preparation method Methods 0.000 claims description 25
- 239000000047 product Substances 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 239000000460 chlorine Substances 0.000 claims description 19
- 150000002431 hydrogen Chemical class 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 16
- 229910052801 chlorine Inorganic materials 0.000 claims description 15
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 12
- 239000005046 Chlorosilane Substances 0.000 claims description 12
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 12
- 239000013589 supplement Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 10
- WRXVIGIHVLRVPC-UHFFFAOYSA-N silane trichlorosilane Chemical compound [SiH4].Cl[SiH](Cl)Cl WRXVIGIHVLRVPC-UHFFFAOYSA-N 0.000 claims 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 239000000463 material Substances 0.000 description 10
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000004071 soot Substances 0.000 description 6
- 229910003902 SiCl 4 Inorganic materials 0.000 description 5
- 238000005243 fluidization Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 230000002596 correlated effect Effects 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000000746 purification Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229920001429 chelating resin Polymers 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000009795 derivation Methods 0.000 description 2
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- 238000002309 gasification Methods 0.000 description 2
- 230000002650 habitual effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
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- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920002449 FKM Polymers 0.000 description 1
- 241000282326 Felis catus Species 0.000 description 1
- 229910000792 Monel Inorganic materials 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229920006172 Tetrafluoroethylene propylene Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- YCNZFPXXIWEFCF-UHFFFAOYSA-N alumane;sodium Chemical compound [Na].[AlH3] YCNZFPXXIWEFCF-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000011234 economic evaluation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003863 metallic catalyst Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000066 reactive distillation Methods 0.000 description 1
- 229940102127 rubidium chloride Drugs 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000007226 seed germination Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006884 silylation reaction Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000010977 unit operation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
Claims (25)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201061425069P | 2010-12-20 | 2010-12-20 | |
US61/425,069 | 2010-12-20 | ||
PCT/US2011/065399 WO2012087795A1 (en) | 2010-12-20 | 2011-12-16 | Production of polycrystalline silicon in substantially closed-loop processes that involve disproportionation operations |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103260716A true CN103260716A (zh) | 2013-08-21 |
CN103260716B CN103260716B (zh) | 2015-10-14 |
Family
ID=45478533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180061070.2A Active CN103260716B (zh) | 2010-12-20 | 2011-12-16 | 在涉及歧化操作的基本闭环方法中制备多晶硅 |
Country Status (7)
Country | Link |
---|---|
US (3) | US8715597B2 (zh) |
EP (1) | EP2654912B1 (zh) |
JP (1) | JP5956461B2 (zh) |
KR (1) | KR101873923B1 (zh) |
CN (1) | CN103260716B (zh) |
TW (1) | TWI474976B (zh) |
WO (1) | WO2012087795A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103449440A (zh) * | 2013-08-23 | 2013-12-18 | 中国恩菲工程技术有限公司 | 制备多晶硅的设备 |
CN103449448A (zh) * | 2013-08-23 | 2013-12-18 | 中国恩菲工程技术有限公司 | 用于纯化三氯氢硅的设备 |
CN103449447A (zh) * | 2013-08-23 | 2013-12-18 | 中国恩菲工程技术有限公司 | 制备三氯氢硅的设备 |
CN103482630A (zh) * | 2013-08-23 | 2014-01-01 | 中国恩菲工程技术有限公司 | 制备多晶硅的方法 |
CN107001053A (zh) * | 2014-09-04 | 2017-08-01 | 爱迪生太阳能公司 | 分离卤代硅烷的方法 |
CN113302153A (zh) * | 2019-01-22 | 2021-08-24 | 株式会社德山 | 纯化氯硅烷类的制造方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2654912B1 (en) | 2010-12-20 | 2016-04-20 | MEMC Electronic Materials, Inc. | Production of polycrystalline silicon in substantially closed-loop processes that involve disproportionation operations |
EP2991930A4 (en) * | 2013-05-04 | 2016-12-21 | Sitec Gmbh | SYSTEM AND METHOD FOR PRODUCING SILANE |
DE102013215011A1 (de) * | 2013-07-31 | 2015-02-05 | Wacker Chemie Ag | Verfahren zur Herstellung von Trichlorsilan |
DE102014007767A1 (de) * | 2014-05-21 | 2015-11-26 | Psc Polysilane Chemicals Gmbh | Verfahren und Vorrichtung zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan |
US20170297916A1 (en) * | 2014-10-14 | 2017-10-19 | Sitec Gmbh | Distillation process |
EP3649078A1 (de) | 2016-12-14 | 2020-05-13 | Wacker Chemie AG | Verfahren zur herstellung von polykristallinem silicium |
CN111278771B (zh) * | 2017-10-05 | 2023-10-13 | 瓦克化学股份公司 | 使用选自Co、Mo、W、Zn、Cr和Ni的催化剂制造氯硅烷的方法 |
JP6884880B2 (ja) * | 2018-02-08 | 2021-06-09 | ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG | 冶金シリコンの分類方法 |
CN112520697A (zh) * | 2020-12-04 | 2021-03-19 | 新疆东方希望新能源有限公司 | 一种采用stc循环喷淋吸收氯化氢的方法 |
CN116216723A (zh) * | 2023-03-16 | 2023-06-06 | 内蒙古鑫元硅材料科技有限公司 | 一种纳米硅和颗粒硅的联产工艺 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4092446A (en) * | 1974-07-31 | 1978-05-30 | Texas Instruments Incorporated | Process of refining impure silicon to produce purified electronic grade silicon |
US4340574A (en) * | 1980-08-28 | 1982-07-20 | Union Carbide Corporation | Process for the production of ultrahigh purity silane with recycle from separation columns |
US4676967A (en) * | 1978-08-23 | 1987-06-30 | Union Carbide Corporation | High purity silane and silicon production |
EP0921098A1 (en) * | 1997-11-10 | 1999-06-09 | MEMC Electronic Materials, Inc. | Closed loop process for producing polycrystalline silicon and fumed silica |
US20040047797A1 (en) * | 2000-12-11 | 2004-03-11 | Hans-Dieter Block | Method for production of high purity silicon |
CN1774397A (zh) * | 2004-09-17 | 2006-05-17 | 德古萨公司 | 制备硅烷的装置和方法 |
CN101065324A (zh) * | 2004-11-19 | 2007-10-31 | Memc电子材料有限公司 | 提纯三氯硅烷和四氯化硅的方法和设备 |
WO2009121558A2 (de) * | 2008-03-31 | 2009-10-08 | Schmid Silicon Technology Gmbh | Verfahren und anlage zur herstellung von reinstsilizium |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3565590A (en) | 1968-07-11 | 1971-02-23 | Texas Instruments Inc | Method and apparatus for producing trichlorosilane |
US4117094A (en) | 1977-06-13 | 1978-09-26 | Texas Instruments Incorporated | Process for silicon and trichlorosilane production |
US4318942A (en) | 1978-08-18 | 1982-03-09 | J. C. Schumacher Company | Process for producing polycrystalline silicon |
US4444811A (en) | 1980-03-03 | 1984-04-24 | California Institute Of Technology | Fluidized bed silicon deposition from silane |
FR2532293A1 (fr) | 1982-08-31 | 1984-03-02 | Rhone Poulenc Spec Chim | Procede continu de preparation de silane |
US4818495A (en) | 1982-11-05 | 1989-04-04 | Union Carbide Corporation | Reactor for fluidized bed silane decomposition |
US4632816A (en) | 1982-12-13 | 1986-12-30 | Ethyl Corporation | Process for production of silane |
US4784840A (en) | 1986-08-25 | 1988-11-15 | Ethyl Corporation | Polysilicon fluid bed process and product |
US4868013A (en) | 1987-08-21 | 1989-09-19 | Ethyl Corporation | Fluidized bed process |
US5871705A (en) | 1996-09-19 | 1999-02-16 | Tokuyama Corporation | Process for producing trichlorosilane |
DE10017168A1 (de) | 2000-04-07 | 2001-10-11 | Bayer Ag | Verfahren und Anlage zur Herstellung von Silan |
DE10044796A1 (de) | 2000-09-11 | 2002-04-04 | Bayer Ag | Verfahren zur Herstellung von Chlorsilanen |
DE10044794A1 (de) | 2000-09-11 | 2002-04-04 | Bayer Ag | Verfahren zur Herstellung von Trichlorsilan |
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CN103449447A (zh) * | 2013-08-23 | 2013-12-18 | 中国恩菲工程技术有限公司 | 制备三氯氢硅的设备 |
CN103482630A (zh) * | 2013-08-23 | 2014-01-01 | 中国恩菲工程技术有限公司 | 制备多晶硅的方法 |
CN103449440B (zh) * | 2013-08-23 | 2015-04-01 | 中国恩菲工程技术有限公司 | 制备多晶硅的设备 |
CN103482630B (zh) * | 2013-08-23 | 2015-12-02 | 中国恩菲工程技术有限公司 | 制备多晶硅的方法 |
CN103449447B (zh) * | 2013-08-23 | 2016-06-29 | 中国恩菲工程技术有限公司 | 制备三氯氢硅的设备 |
CN103449448B (zh) * | 2013-08-23 | 2016-07-06 | 中国恩菲工程技术有限公司 | 用于纯化三氯氢硅的设备 |
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CN110589837A (zh) * | 2014-09-04 | 2019-12-20 | 各星有限公司 | 分离卤代硅烷的方法 |
CN113302153A (zh) * | 2019-01-22 | 2021-08-24 | 株式会社德山 | 纯化氯硅烷类的制造方法 |
CN113302153B (zh) * | 2019-01-22 | 2023-12-26 | 株式会社德山 | 纯化氯硅烷类的制造方法 |
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KR101873923B1 (ko) | 2018-08-02 |
TW201242896A (en) | 2012-11-01 |
US8715597B2 (en) | 2014-05-06 |
CN103260716B (zh) | 2015-10-14 |
US20120189501A1 (en) | 2012-07-26 |
KR20140004103A (ko) | 2014-01-10 |
EP2654912A1 (en) | 2013-10-30 |
WO2012087795A1 (en) | 2012-06-28 |
JP2014505649A (ja) | 2014-03-06 |
TWI474976B (zh) | 2015-03-01 |
US10407309B2 (en) | 2019-09-10 |
US20150110702A1 (en) | 2015-04-23 |
US8956584B2 (en) | 2015-02-17 |
US20120189527A1 (en) | 2012-07-26 |
JP5956461B2 (ja) | 2016-07-27 |
EP2654912B1 (en) | 2016-04-20 |
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