JP5956461B2 - 不均化操作を伴う実質的に閉ループの方法における多結晶シリコンの製造 - Google Patents

不均化操作を伴う実質的に閉ループの方法における多結晶シリコンの製造 Download PDF

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JP5956461B2
JP5956461B2 JP2013546247A JP2013546247A JP5956461B2 JP 5956461 B2 JP5956461 B2 JP 5956461B2 JP 2013546247 A JP2013546247 A JP 2013546247A JP 2013546247 A JP2013546247 A JP 2013546247A JP 5956461 B2 JP5956461 B2 JP 5956461B2
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hydrogen
reactor
trichlorosilane
disproportionation
silicon tetrachloride
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JP2014505649A (ja
JP2014505649A5 (enExample
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プニート・グプタ
ホアン・ユエ
サティシュ・ブサラプ
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SunEdison Inc
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SunEdison Inc
MEMC Electronic Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2013546247A 2010-12-20 2011-12-16 不均化操作を伴う実質的に閉ループの方法における多結晶シリコンの製造 Active JP5956461B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201061425069P 2010-12-20 2010-12-20
US61/425,069 2010-12-20
PCT/US2011/065399 WO2012087795A1 (en) 2010-12-20 2011-12-16 Production of polycrystalline silicon in substantially closed-loop processes that involve disproportionation operations

Publications (3)

Publication Number Publication Date
JP2014505649A JP2014505649A (ja) 2014-03-06
JP2014505649A5 JP2014505649A5 (enExample) 2015-01-29
JP5956461B2 true JP5956461B2 (ja) 2016-07-27

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JP2013546247A Active JP5956461B2 (ja) 2010-12-20 2011-12-16 不均化操作を伴う実質的に閉ループの方法における多結晶シリコンの製造

Country Status (7)

Country Link
US (3) US8956584B2 (enExample)
EP (1) EP2654912B1 (enExample)
JP (1) JP5956461B2 (enExample)
KR (1) KR101873923B1 (enExample)
CN (1) CN103260716B (enExample)
TW (1) TWI474976B (enExample)
WO (1) WO2012087795A1 (enExample)

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CN105228952B (zh) * 2013-05-04 2016-11-30 斯泰克有限责任公司 用于硅烷生产的系统和方法
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CN103449448B (zh) * 2013-08-23 2016-07-06 中国恩菲工程技术有限公司 用于纯化三氯氢硅的设备
CN103449447B (zh) * 2013-08-23 2016-06-29 中国恩菲工程技术有限公司 制备三氯氢硅的设备
CN103482630B (zh) * 2013-08-23 2015-12-02 中国恩菲工程技术有限公司 制备多晶硅的方法
CN103449440B (zh) * 2013-08-23 2015-04-01 中国恩菲工程技术有限公司 制备多晶硅的设备
DE102014007767B4 (de) * 2014-05-21 2025-08-28 Christian Bauch Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan
US10252916B2 (en) * 2014-09-04 2019-04-09 Corner Star Limited Methods for separating halosilanes
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JP6884880B2 (ja) * 2018-02-08 2021-06-09 ワッカー ケミー アクチエンゲゼルシャフトＷａｃｋｅｒ Ｃｈｅｍｉｅ ＡＧ 冶金シリコンの分類方法
US12162763B2 (en) * 2019-01-22 2024-12-10 Tokuyama Corporation Method for producing purified chlorosilanes
CN112520697A (zh) * 2020-12-04 2021-03-19 新疆东方希望新能源有限公司 一种采用stc循环喷淋吸收氯化氢的方法
CN116216723A (zh) * 2023-03-16 2023-06-06 内蒙古鑫元硅材料科技有限公司 一种纳米硅和颗粒硅的联产工艺

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Publication number Publication date
JP2014505649A (ja) 2014-03-06
US10407309B2 (en) 2019-09-10
CN103260716A (zh) 2013-08-21
KR101873923B1 (ko) 2018-08-02
WO2012087795A1 (en) 2012-06-28
US8715597B2 (en) 2014-05-06
US20120189501A1 (en) 2012-07-26
CN103260716B (zh) 2015-10-14
TW201242896A (en) 2012-11-01
EP2654912B1 (en) 2016-04-20
US20150110702A1 (en) 2015-04-23
US20120189527A1 (en) 2012-07-26
KR20140004103A (ko) 2014-01-10
TWI474976B (zh) 2015-03-01
EP2654912A1 (en) 2013-10-30
US8956584B2 (en) 2015-02-17

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