CN103260716B - 在涉及歧化操作的基本闭环方法中制备多晶硅 - Google Patents

在涉及歧化操作的基本闭环方法中制备多晶硅 Download PDF

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Publication number
CN103260716B
CN103260716B CN201180061070.2A CN201180061070A CN103260716B CN 103260716 B CN103260716 B CN 103260716B CN 201180061070 A CN201180061070 A CN 201180061070A CN 103260716 B CN103260716 B CN 103260716B
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hydrogen
trichlorosilane
reactor
disproportionation
silicon tetrachloride
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Chinese (zh)
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CN103260716A (zh
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P·古普塔
Y·黄
S·布萨拉普
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Jiangsu Zhongneng Polysilicon Technology Development Co ltd
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SunEdison Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CN201180061070.2A 2010-12-20 2011-12-16 在涉及歧化操作的基本闭环方法中制备多晶硅 Active CN103260716B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201061425069P 2010-12-20 2010-12-20
US61/425,069 2010-12-20
PCT/US2011/065399 WO2012087795A1 (en) 2010-12-20 2011-12-16 Production of polycrystalline silicon in substantially closed-loop processes that involve disproportionation operations

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Publication Number Publication Date
CN103260716A CN103260716A (zh) 2013-08-21
CN103260716B true CN103260716B (zh) 2015-10-14

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Country Link
US (3) US8956584B2 (enExample)
EP (1) EP2654912B1 (enExample)
JP (1) JP5956461B2 (enExample)
KR (1) KR101873923B1 (enExample)
CN (1) CN103260716B (enExample)
TW (1) TWI474976B (enExample)
WO (1) WO2012087795A1 (enExample)

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CN105228952B (zh) * 2013-05-04 2016-11-30 斯泰克有限责任公司 用于硅烷生产的系统和方法
DE102013215011A1 (de) * 2013-07-31 2015-02-05 Wacker Chemie Ag Verfahren zur Herstellung von Trichlorsilan
CN103449448B (zh) * 2013-08-23 2016-07-06 中国恩菲工程技术有限公司 用于纯化三氯氢硅的设备
CN103449447B (zh) * 2013-08-23 2016-06-29 中国恩菲工程技术有限公司 制备三氯氢硅的设备
CN103482630B (zh) * 2013-08-23 2015-12-02 中国恩菲工程技术有限公司 制备多晶硅的方法
CN103449440B (zh) * 2013-08-23 2015-04-01 中国恩菲工程技术有限公司 制备多晶硅的设备
DE102014007767B4 (de) * 2014-05-21 2025-08-28 Christian Bauch Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan
US10252916B2 (en) * 2014-09-04 2019-04-09 Corner Star Limited Methods for separating halosilanes
US20170297916A1 (en) * 2014-10-14 2017-10-19 Sitec Gmbh Distillation process
US11440803B2 (en) 2016-12-14 2022-09-13 Wacker Chemie Ag Process for preparing polycrystalline silicon
WO2019068336A1 (de) * 2017-10-05 2019-04-11 Wacker Chemie Ag Verfahren zur herstellung von chlorsilanen unter verwendung eines katalysators ausgewählt aus der gruppe co, mo, w
JP6884880B2 (ja) * 2018-02-08 2021-06-09 ワッカー ケミー アクチエンゲゼルシャフトＷａｃｋｅｒ Ｃｈｅｍｉｅ ＡＧ 冶金シリコンの分類方法
US12162763B2 (en) * 2019-01-22 2024-12-10 Tokuyama Corporation Method for producing purified chlorosilanes
CN112520697A (zh) * 2020-12-04 2021-03-19 新疆东方希望新能源有限公司 一种采用stc循环喷淋吸收氯化氢的方法
CN116216723A (zh) * 2023-03-16 2023-06-06 内蒙古鑫元硅材料科技有限公司 一种纳米硅和颗粒硅的联产工艺

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CN101065324A (zh) * 2004-11-19 2007-10-31 Memc电子材料有限公司 提纯三氯硅烷和四氯化硅的方法和设备
WO2009121558A2 (de) * 2008-03-31 2009-10-08 Schmid Silicon Technology Gmbh Verfahren und anlage zur herstellung von reinstsilizium

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US4092446A (en) * 1974-07-31 1978-05-30 Texas Instruments Incorporated Process of refining impure silicon to produce purified electronic grade silicon
US4676967A (en) * 1978-08-23 1987-06-30 Union Carbide Corporation High purity silane and silicon production
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WO2009121558A2 (de) * 2008-03-31 2009-10-08 Schmid Silicon Technology Gmbh Verfahren und anlage zur herstellung von reinstsilizium

Also Published As

Publication number Publication date
JP2014505649A (ja) 2014-03-06
US10407309B2 (en) 2019-09-10
CN103260716A (zh) 2013-08-21
KR101873923B1 (ko) 2018-08-02
WO2012087795A1 (en) 2012-06-28
US8715597B2 (en) 2014-05-06
US20120189501A1 (en) 2012-07-26
TW201242896A (en) 2012-11-01
EP2654912B1 (en) 2016-04-20
US20150110702A1 (en) 2015-04-23
US20120189527A1 (en) 2012-07-26
KR20140004103A (ko) 2014-01-10
JP5956461B2 (ja) 2016-07-27
TWI474976B (zh) 2015-03-01
EP2654912A1 (en) 2013-10-30
US8956584B2 (en) 2015-02-17

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Address after: American Missouri

Patentee after: SUNEDISON, Inc.

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Patentee before: MEMC Electronic Materials, Inc.

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Effective date of registration: 20181213

Address after: 17th Floor, Global Trade Plaza, 1 West Austin Road, Kowloon, China

Patentee after: SUNEDISON, Inc.

Address before: American Missouri

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Effective date of registration: 20230816

Address after: Room 205, West Zone, 2nd Floor, No. 707 Zhangyang Road, China (Shanghai) Pilot Free Trade Zone, Pudong New Area, Shanghai

Patentee after: GCL New (Shanghai) Photovoltaic Technology Co.,Ltd.

Address before: 17th Floor, Global Trade Plaza, 1 West Austin Road, Kowloon, China

Patentee before: SUNEDISON, Inc.

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Effective date of registration: 20231025

Address after: 221000 No. 66, Yangshan Road, Xuzhou Economic and Technological Development Zone, Xuzhou City, Jiangsu Province

Patentee after: JIANGSU ZHONGNENG POLYSILICON TECHNOLOGY DEVELOPMENT Co.,Ltd.

Address before: Room 205, West District, 2nd floor, no.707 Zhangyang Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai, 200120

Patentee before: GCL New (Shanghai) Photovoltaic Technology Co.,Ltd.