JP2014116473A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2014116473A JP2014116473A JP2012269822A JP2012269822A JP2014116473A JP 2014116473 A JP2014116473 A JP 2014116473A JP 2012269822 A JP2012269822 A JP 2012269822A JP 2012269822 A JP2012269822 A JP 2012269822A JP 2014116473 A JP2014116473 A JP 2014116473A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】本発明による半導体装置1は、表面と裏面を有する平板状の半導体素子2と、半導体素子2の表側の制御配線4を被覆する絶縁層6と、半導体素子2の表側に半田層を介して接合される金属ブロック8と、金属ブロック8と絶縁層6の間に形成されて金属ブロック8と同等以上の硬度を有する保護膜7aと、を含み、表側から見て、保護膜7aは金属ブロック8の縁部と制御配線4が交差する位置を少なくとも含んで形成されることを特徴とする。
【選択図】図2
Description
2 半導体素子
3 エミッタ電極(主電極)
4 Alパターン(制御配線)
5 ゲート電極パッド(制御電極パッド)
6 絶縁材パターン(絶縁層)
6a 開口部
7 Niメッキパターン
7a 保護膜
7b 半田付け用電極(接合膜)
7c パッド用接合膜
7d 開口
8 金属ブロック
8a バリ
9 表側半田層(半田層)
10 ヒートスプレッダー(表側放熱板)
11 ヒートスプレッダー(裏側放熱板)
12 裏側半田層
13 第三半田層
14 Alワイヤ
15 制御端子
16 封止樹脂
17 保護膜(Niメッキ以外)
Claims (5)
- 表面と裏面を有する平板状の半導体素子と、当該半導体素子の表側の制御配線を被覆する絶縁層と、前記半導体素子の表側に半田層を介して接合される金属ブロックと、前記金属ブロックと前記絶縁層の間に形成されて前記金属ブロックと同等以上の硬度を有する保護膜と、を含み、前記表側から見て、前記保護膜は前記金属ブロックの縁部と前記制御配線が交差する位置を少なくとも含んで形成されることを特徴とする半導体装置。
- 前記表側から見て、前記保護膜は前記金属ブロックの縁部と前記制御配線が交差する位置を含む所定範囲に形成されることを特徴とする請求項1に記載の半導体装置。
- 前記半導体素子の前記半田層が接合される主電極は複数の電極部分を含み、前記制御配線は前記複数の電極部分のうち隣接する電極部分の間に位置して、前記絶縁層は前記複数の電極部分に対応する複数の開口部を有するとともに、前記開口部には前記半田層と前記電極部分との接合膜が形成されることを特徴とする請求項2に記載の半導体装置。
- 前記接合膜と前記保護膜は一体的に形成されることを特徴とする請求項3に記載の半導体装置。
- 前記保護膜は前記接合膜と同一の材質で形成されることを特徴とする請求項4に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012269822A JP5765324B2 (ja) | 2012-12-10 | 2012-12-10 | 半導体装置 |
US14/096,172 US9224663B2 (en) | 2012-12-10 | 2013-12-04 | Semiconductor device |
CN201310654629.3A CN103871989B (zh) | 2012-12-10 | 2013-12-06 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012269822A JP5765324B2 (ja) | 2012-12-10 | 2012-12-10 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014116473A true JP2014116473A (ja) | 2014-06-26 |
JP5765324B2 JP5765324B2 (ja) | 2015-08-19 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012269822A Expired - Fee Related JP5765324B2 (ja) | 2012-12-10 | 2012-12-10 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9224663B2 (ja) |
JP (1) | JP5765324B2 (ja) |
CN (1) | CN103871989B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018082009A (ja) * | 2016-11-15 | 2018-05-24 | トヨタ自動車株式会社 | 半導体モジュール |
WO2020100219A1 (ja) * | 2018-11-13 | 2020-05-22 | 三菱電機株式会社 | 高周波増幅器および高周波増幅器モジュール |
WO2020166251A1 (ja) * | 2019-02-13 | 2020-08-20 | 株式会社デンソー | 半導体装置 |
US10896863B2 (en) | 2017-01-13 | 2021-01-19 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing the same |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106449575B (zh) * | 2015-08-07 | 2020-07-24 | 晶宏半导体股份有限公司 | 半导体装置的凸块结构 |
TWI685077B (zh) * | 2015-08-07 | 2020-02-11 | 晶宏半導體股份有限公司 | 半導體裝置之凸塊結構 |
CN108987555A (zh) * | 2017-06-01 | 2018-12-11 | 晶能光电(江西)有限公司 | 一种白光芯片制备方法 |
CN109427950A (zh) * | 2017-08-21 | 2019-03-05 | 晶能光电(江西)有限公司 | 白光芯片及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003133329A (ja) * | 2001-08-09 | 2003-05-09 | Denso Corp | 半導体装置 |
JP2007048889A (ja) * | 2005-08-09 | 2007-02-22 | Fuji Electric Holdings Co Ltd | 半導体装置 |
JP2007109880A (ja) * | 2005-10-13 | 2007-04-26 | Fuji Electric Holdings Co Ltd | 半導体装置 |
JP2011066371A (ja) * | 2009-08-18 | 2011-03-31 | Denso Corp | 半導体装置およびその製造方法 |
JP2012195500A (ja) * | 2011-03-17 | 2012-10-11 | Toshiba Corp | 半導体装置及びその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5895972A (en) * | 1996-12-31 | 1999-04-20 | Intel Corporation | Method and apparatus for cooling the backside of a semiconductor device using an infrared transparent heat slug |
US6803667B2 (en) * | 2001-08-09 | 2004-10-12 | Denso Corporation | Semiconductor device having a protective film |
JP3812549B2 (ja) | 2003-06-27 | 2006-08-23 | 株式会社デンソー | 半導体装置 |
JP2005136018A (ja) * | 2003-10-29 | 2005-05-26 | Denso Corp | 半導体装置 |
JP4073876B2 (ja) | 2004-01-14 | 2008-04-09 | 三菱電機株式会社 | 半導体装置 |
JP3829860B2 (ja) | 2004-01-30 | 2006-10-04 | 株式会社デンソー | 半導体チップの製造方法 |
US7615469B2 (en) * | 2007-05-25 | 2009-11-10 | Semiconductor Components Industries, L.L.C. | Edge seal for a semiconductor device and method therefor |
DE102010038933A1 (de) * | 2009-08-18 | 2011-02-24 | Denso Corporation, Kariya-City | Halbleitervorrichtung mit Halbleiterchip und Metallplatte und Verfahren zu deren Fertigung |
JP5708124B2 (ja) * | 2011-03-25 | 2015-04-30 | 三菱電機株式会社 | 半導体装置 |
-
2012
- 2012-12-10 JP JP2012269822A patent/JP5765324B2/ja not_active Expired - Fee Related
-
2013
- 2013-12-04 US US14/096,172 patent/US9224663B2/en active Active
- 2013-12-06 CN CN201310654629.3A patent/CN103871989B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003133329A (ja) * | 2001-08-09 | 2003-05-09 | Denso Corp | 半導体装置 |
JP2007048889A (ja) * | 2005-08-09 | 2007-02-22 | Fuji Electric Holdings Co Ltd | 半導体装置 |
JP2007109880A (ja) * | 2005-10-13 | 2007-04-26 | Fuji Electric Holdings Co Ltd | 半導体装置 |
JP2011066371A (ja) * | 2009-08-18 | 2011-03-31 | Denso Corp | 半導体装置およびその製造方法 |
JP2011066377A (ja) * | 2009-08-18 | 2011-03-31 | Denso Corp | 半導体装置およびその製造方法 |
JP2012195500A (ja) * | 2011-03-17 | 2012-10-11 | Toshiba Corp | 半導体装置及びその製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018082009A (ja) * | 2016-11-15 | 2018-05-24 | トヨタ自動車株式会社 | 半導体モジュール |
US10896863B2 (en) | 2017-01-13 | 2021-01-19 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing the same |
WO2020100219A1 (ja) * | 2018-11-13 | 2020-05-22 | 三菱電機株式会社 | 高周波増幅器および高周波増幅器モジュール |
WO2020166251A1 (ja) * | 2019-02-13 | 2020-08-20 | 株式会社デンソー | 半導体装置 |
JP2020136315A (ja) * | 2019-02-13 | 2020-08-31 | 株式会社デンソー | 半導体装置 |
JP7103256B2 (ja) | 2019-02-13 | 2022-07-20 | 株式会社デンソー | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US9224663B2 (en) | 2015-12-29 |
JP5765324B2 (ja) | 2015-08-19 |
CN103871989B (zh) | 2017-04-19 |
CN103871989A (zh) | 2014-06-18 |
US20140159230A1 (en) | 2014-06-12 |
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