JP2014096559A5 - - Google Patents

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Publication number
JP2014096559A5
JP2014096559A5 JP2013082669A JP2013082669A JP2014096559A5 JP 2014096559 A5 JP2014096559 A5 JP 2014096559A5 JP 2013082669 A JP2013082669 A JP 2013082669A JP 2013082669 A JP2013082669 A JP 2013082669A JP 2014096559 A5 JP2014096559 A5 JP 2014096559A5
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JP
Japan
Prior art keywords
semiconductor layer
gate electrode
region
power semiconductor
layer
Prior art date
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Application number
JP2013082669A
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English (en)
Japanese (ja)
Other versions
JP6228747B2 (ja
JP2014096559A (ja
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Publication date
Priority claimed from KR1020120125842A external-priority patent/KR102024290B1/ko
Application filed filed Critical
Publication of JP2014096559A publication Critical patent/JP2014096559A/ja
Publication of JP2014096559A5 publication Critical patent/JP2014096559A5/ja
Application granted granted Critical
Publication of JP6228747B2 publication Critical patent/JP6228747B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013082669A 2012-11-08 2013-04-11 電力半導体素子 Expired - Fee Related JP6228747B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2012-0125842 2012-11-08
KR1020120125842A KR102024290B1 (ko) 2012-11-08 2012-11-08 전력 반도체 소자

Publications (3)

Publication Number Publication Date
JP2014096559A JP2014096559A (ja) 2014-05-22
JP2014096559A5 true JP2014096559A5 (enExample) 2016-06-02
JP6228747B2 JP6228747B2 (ja) 2017-11-08

Family

ID=48917442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013082669A Expired - Fee Related JP6228747B2 (ja) 2012-11-08 2013-04-11 電力半導体素子

Country Status (5)

Country Link
US (1) US8723228B1 (enExample)
EP (1) EP2731143A3 (enExample)
JP (1) JP6228747B2 (enExample)
KR (1) KR102024290B1 (enExample)
CN (1) CN103811541B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104282735A (zh) * 2014-09-17 2015-01-14 电子科技大学 一种具有负离子注入钝化层的场效应晶体管
ITUB20155862A1 (it) 2015-11-24 2017-05-24 St Microelectronics Srl Transistore di tipo normalmente spento con ridotta resistenza in stato acceso e relativo metodo di fabbricazione
CN105826370A (zh) * 2016-05-25 2016-08-03 深圳市华讯方舟科技有限公司 晶体管
US11476359B2 (en) * 2019-03-18 2022-10-18 Wolfspeed, Inc. Structures for reducing electron concentration and process for reducing electron concentration
US11888051B2 (en) * 2020-05-08 2024-01-30 Globalfoundries Singapore Pte. Ltd. Structures for a high-electron-mobility transistor and related methods
CN115224124A (zh) 2021-04-20 2022-10-21 联华电子股份有限公司 半导体元件及其制作方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0936134A (ja) * 1995-07-25 1997-02-07 Matsushita Electron Corp 半導体装置及びその製造方法
JP3206520B2 (ja) * 1997-10-06 2001-09-10 日本電気株式会社 半導体記憶装置とその製造方法
JP3534624B2 (ja) * 1998-05-01 2004-06-07 沖電気工業株式会社 半導体装置の製造方法
JP2007194588A (ja) * 2005-12-20 2007-08-02 Sony Corp 電界効果トランジスタ及びこの電界効果トランジスタを備えた半導体装置並びに半導体装置の製造方法
JP2007311684A (ja) * 2006-05-22 2007-11-29 Mitsubishi Electric Corp 電界効果型トランジスタ
PL2080228T3 (pl) * 2006-10-04 2021-04-19 Leonardo S.P.A. Urządzenie mocy pseudomorficznego tranzystora o wysokiej ruchliwości elektronów (phemt) z zasilaniem jednonapięciowym i sposób jego wytwarzania
CN101604704B (zh) * 2008-06-13 2012-09-05 西安能讯微电子有限公司 Hemt器件及其制造方法
JP2010135640A (ja) * 2008-12-05 2010-06-17 Panasonic Corp 電界効果トランジスタ
DE102010016993A1 (de) * 2010-05-18 2011-11-24 United Monolithic Semiconductors Gmbh Halbleiter-Bauelement
JP5730505B2 (ja) * 2010-06-23 2015-06-10 富士通株式会社 化合物半導体装置
JP2012054471A (ja) * 2010-09-02 2012-03-15 Fujitsu Ltd 半導体装置及びその製造方法、電源装置
JP5685917B2 (ja) * 2010-12-10 2015-03-18 富士通株式会社 半導体装置及び半導体装置の製造方法
JP5866766B2 (ja) * 2011-02-10 2016-02-17 富士通株式会社 化合物半導体装置及びその製造方法
JP5776217B2 (ja) * 2011-02-24 2015-09-09 富士通株式会社 化合物半導体装置

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