KR102024290B1 - 전력 반도체 소자 - Google Patents

전력 반도체 소자 Download PDF

Info

Publication number
KR102024290B1
KR102024290B1 KR1020120125842A KR20120125842A KR102024290B1 KR 102024290 B1 KR102024290 B1 KR 102024290B1 KR 1020120125842 A KR1020120125842 A KR 1020120125842A KR 20120125842 A KR20120125842 A KR 20120125842A KR 102024290 B1 KR102024290 B1 KR 102024290B1
Authority
KR
South Korea
Prior art keywords
region
layer
gate electrode
barrier layer
cap layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020120125842A
Other languages
English (en)
Korean (ko)
Other versions
KR20140059410A (ko
Inventor
오정훈
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020120125842A priority Critical patent/KR102024290B1/ko
Priority to US13/796,688 priority patent/US8723228B1/en
Priority to JP2013082669A priority patent/JP6228747B2/ja
Priority to CN201310175270.1A priority patent/CN103811541B/zh
Priority to EP13179593.2A priority patent/EP2731143A3/en
Publication of KR20140059410A publication Critical patent/KR20140059410A/ko
Application granted granted Critical
Publication of KR102024290B1 publication Critical patent/KR102024290B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/57—Physical imperfections the imperfections being on the surface of the semiconductor body, e.g. the body having a roughened surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020120125842A 2012-11-08 2012-11-08 전력 반도체 소자 Expired - Fee Related KR102024290B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020120125842A KR102024290B1 (ko) 2012-11-08 2012-11-08 전력 반도체 소자
US13/796,688 US8723228B1 (en) 2012-11-08 2013-03-12 Power semiconductor device
JP2013082669A JP6228747B2 (ja) 2012-11-08 2013-04-11 電力半導体素子
CN201310175270.1A CN103811541B (zh) 2012-11-08 2013-05-13 功率半导体器件
EP13179593.2A EP2731143A3 (en) 2012-11-08 2013-08-07 Power semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120125842A KR102024290B1 (ko) 2012-11-08 2012-11-08 전력 반도체 소자

Publications (2)

Publication Number Publication Date
KR20140059410A KR20140059410A (ko) 2014-05-16
KR102024290B1 true KR102024290B1 (ko) 2019-11-04

Family

ID=48917442

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120125842A Expired - Fee Related KR102024290B1 (ko) 2012-11-08 2012-11-08 전력 반도체 소자

Country Status (5)

Country Link
US (1) US8723228B1 (enExample)
EP (1) EP2731143A3 (enExample)
JP (1) JP6228747B2 (enExample)
KR (1) KR102024290B1 (enExample)
CN (1) CN103811541B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104282735A (zh) * 2014-09-17 2015-01-14 电子科技大学 一种具有负离子注入钝化层的场效应晶体管
ITUB20155862A1 (it) * 2015-11-24 2017-05-24 St Microelectronics Srl Transistore di tipo normalmente spento con ridotta resistenza in stato acceso e relativo metodo di fabbricazione
CN105826370A (zh) * 2016-05-25 2016-08-03 深圳市华讯方舟科技有限公司 晶体管
US11476359B2 (en) * 2019-03-18 2022-10-18 Wolfspeed, Inc. Structures for reducing electron concentration and process for reducing electron concentration
US11888051B2 (en) * 2020-05-08 2024-01-30 Globalfoundries Singapore Pte. Ltd. Structures for a high-electron-mobility transistor and related methods
CN115224124A (zh) 2021-04-20 2022-10-21 联华电子股份有限公司 半导体元件及其制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010016993A1 (de) * 2010-05-18 2011-11-24 United Monolithic Semiconductors Gmbh Halbleiter-Bauelement

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0936134A (ja) * 1995-07-25 1997-02-07 Matsushita Electron Corp 半導体装置及びその製造方法
JP3206520B2 (ja) * 1997-10-06 2001-09-10 日本電気株式会社 半導体記憶装置とその製造方法
JP3534624B2 (ja) * 1998-05-01 2004-06-07 沖電気工業株式会社 半導体装置の製造方法
JP2007194588A (ja) * 2005-12-20 2007-08-02 Sony Corp 電界効果トランジスタ及びこの電界効果トランジスタを備えた半導体装置並びに半導体装置の製造方法
JP2007311684A (ja) * 2006-05-22 2007-11-29 Mitsubishi Electric Corp 電界効果型トランジスタ
ES2837454T3 (es) * 2006-10-04 2021-06-30 Leonardo Spa Dispositivo de potencia para transistor pseudomórfico de alta movilidad de electrones (PHEMT) de suministro de voltaje único y proceso para fabricar el mismo
CN101604704B (zh) * 2008-06-13 2012-09-05 西安能讯微电子有限公司 Hemt器件及其制造方法
JP2010135640A (ja) * 2008-12-05 2010-06-17 Panasonic Corp 電界効果トランジスタ
JP5730505B2 (ja) * 2010-06-23 2015-06-10 富士通株式会社 化合物半導体装置
JP2012054471A (ja) * 2010-09-02 2012-03-15 Fujitsu Ltd 半導体装置及びその製造方法、電源装置
JP5685917B2 (ja) * 2010-12-10 2015-03-18 富士通株式会社 半導体装置及び半導体装置の製造方法
JP5866766B2 (ja) * 2011-02-10 2016-02-17 富士通株式会社 化合物半導体装置及びその製造方法
JP5776217B2 (ja) * 2011-02-24 2015-09-09 富士通株式会社 化合物半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010016993A1 (de) * 2010-05-18 2011-11-24 United Monolithic Semiconductors Gmbh Halbleiter-Bauelement

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Subramaniam ARULKUMARAN et al.,‘On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors’, Jpn. J. Appl. Phys., Vol. 45(8), L220-223 (2006.02.17.)*

Also Published As

Publication number Publication date
KR20140059410A (ko) 2014-05-16
CN103811541B (zh) 2019-01-15
CN103811541A (zh) 2014-05-21
JP2014096559A (ja) 2014-05-22
EP2731143A2 (en) 2014-05-14
US20140124836A1 (en) 2014-05-08
EP2731143A3 (en) 2017-08-23
US8723228B1 (en) 2014-05-13
JP6228747B2 (ja) 2017-11-08

Similar Documents

Publication Publication Date Title
EP3008759B1 (en) Cascode structures with gan cap layers
EP3008760B1 (en) Recessed field plate transistor structures
KR100933277B1 (ko) ＧａＮ계 캡 세그먼트 상에 게이트 콘택을 구비한ＡｌＧａＮ/ＧａＮ ＨＥＭＴ 및 그 제조방법
EP1921669B1 (en) GaN based HEMTs with buried field plates
CN110233103B (zh) 具有深载流子气接触结构的高电子迁移率晶体管
US8405125B2 (en) Semiconductor device and method for producing the same
US8193561B2 (en) Semiconductor device and method of manufacturing the same
JP5383652B2 (ja) 電界効果トランジスタ及びその製造方法
US9589951B2 (en) High-electron-mobility transistor with protective diode
US12206000B2 (en) High electron mobility transistor and method for forming the same
CN110233104B (zh) 具有双厚度势垒层的高电子迁移率晶体管
US20110006308A1 (en) Semiconductor device
KR102024290B1 (ko) 전력 반도체 소자
US20220376098A1 (en) Field effect transistor with selective modified access regions
JP7361723B2 (ja) 窒化物半導体装置
KR20150065005A (ko) 노멀리 오프 고전자이동도 트랜지스터
KR101668445B1 (ko) 반도체 소자 및 그의 제조방법
KR20140111425A (ko) 이종접합 트랜지스터 및 그 제조방법
US11869964B2 (en) Field effect transistors with modified access regions
KR20140028424A (ko) 고 전력 반도체 소자
CN113972268A (zh) 隧穿增强型垂直结构的hemt器件
KR20140054585A (ko) 전력 반도체 소자
KR102750323B1 (ko) 고전압에 강한 GaN 반도체 소자의 구조 및 그 제조방법
KR102686096B1 (ko) GaN RF HEMT 소자 및 그 제조방법
CN118302866A (zh) 半导体器件及其制造方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20230918

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20230918

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000