CN105826370A - 晶体管 - Google Patents
晶体管 Download PDFInfo
- Publication number
- CN105826370A CN105826370A CN201610356218.XA CN201610356218A CN105826370A CN 105826370 A CN105826370 A CN 105826370A CN 201610356218 A CN201610356218 A CN 201610356218A CN 105826370 A CN105826370 A CN 105826370A
- Authority
- CN
- China
- Prior art keywords
- grid
- field plate
- drain region
- doped drain
- low doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 title description 2
- 230000004888 barrier function Effects 0.000 claims abstract description 74
- 229910002704 AlGaN Inorganic materials 0.000 claims description 32
- 125000001153 fluoro group Chemical group F* 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 83
- 230000015556 catabolic process Effects 0.000 abstract description 37
- 230000000694 effects Effects 0.000 abstract description 22
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 13
- 239000000463 material Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- 230000033228 biological regulation Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13064—High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610356218.XA CN105826370A (zh) | 2016-05-25 | 2016-05-25 | 晶体管 |
PCT/CN2016/101838 WO2017201947A1 (zh) | 2016-05-25 | 2016-10-12 | 具备场板和低掺杂漏区的晶体管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610356218.XA CN105826370A (zh) | 2016-05-25 | 2016-05-25 | 晶体管 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105826370A true CN105826370A (zh) | 2016-08-03 |
Family
ID=56530628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610356218.XA Pending CN105826370A (zh) | 2016-05-25 | 2016-05-25 | 晶体管 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN105826370A (zh) |
WO (1) | WO2017201947A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017201947A1 (zh) * | 2016-05-25 | 2017-11-30 | 华讯方舟科技有限公司 | 具备场板和低掺杂漏区的晶体管 |
CN109545850A (zh) * | 2017-09-22 | 2019-03-29 | 新唐科技股份有限公司 | 半导体元件及其制造方法 |
CN110663105A (zh) * | 2017-05-31 | 2020-01-07 | 三菱电机株式会社 | 半导体装置的制造方法 |
CN111129118A (zh) * | 2019-12-27 | 2020-05-08 | 英诺赛科(珠海)科技有限公司 | 半导体器件及其制造方法 |
CN113066726A (zh) * | 2021-03-19 | 2021-07-02 | 弘大芯源(深圳)半导体有限公司 | 一种新型场效应晶体管的实现方法 |
WO2022000269A1 (en) * | 2020-06-30 | 2022-01-06 | Innoscience (Zhuhai) Technology Co., Ltd. | Semiconductor device and fabrication method thereof |
WO2024131020A1 (zh) * | 2022-12-22 | 2024-06-27 | 武汉华星光电半导体显示技术有限公司 | 显示面板及显示设备 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109241623B (zh) * | 2018-09-06 | 2022-10-14 | 电子科技大学 | 一种表面势紧凑模型参数提取方法 |
CN110212028B (zh) * | 2019-05-22 | 2023-03-31 | 山东建筑大学 | 一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050051800A1 (en) * | 2003-09-09 | 2005-03-10 | Cree, Inc. | Cascode amplifier structures including wide bandgap field effect transistor with field plates |
TW200644241A (en) * | 2005-03-11 | 2006-12-16 | Cree Inc | Wide bandgap transistors with gate-source field plates |
CN101299437A (zh) * | 2007-05-01 | 2008-11-05 | 冲电气工业株式会社 | 场效应晶体管 |
CN101714574A (zh) * | 2008-10-03 | 2010-05-26 | 香港科技大学 | AlGaN/GaN高电子迁移率晶体管 |
CN103811541A (zh) * | 2012-11-08 | 2014-05-21 | Lg伊诺特有限公司 | 功率半导体器件 |
CN104037217A (zh) * | 2014-07-02 | 2014-09-10 | 西安电子科技大学 | 一种基于复合偶极层的AlGaN/GaN HEMT开关器件结构及制作方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104201202B (zh) * | 2014-09-17 | 2017-01-25 | 电子科技大学 | 一种具有复合势垒层的氮化镓基异质结场效应管 |
CN105826370A (zh) * | 2016-05-25 | 2016-08-03 | 深圳市华讯方舟科技有限公司 | 晶体管 |
-
2016
- 2016-05-25 CN CN201610356218.XA patent/CN105826370A/zh active Pending
- 2016-10-12 WO PCT/CN2016/101838 patent/WO2017201947A1/zh active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050051800A1 (en) * | 2003-09-09 | 2005-03-10 | Cree, Inc. | Cascode amplifier structures including wide bandgap field effect transistor with field plates |
TW200644241A (en) * | 2005-03-11 | 2006-12-16 | Cree Inc | Wide bandgap transistors with gate-source field plates |
CN101299437A (zh) * | 2007-05-01 | 2008-11-05 | 冲电气工业株式会社 | 场效应晶体管 |
CN101714574A (zh) * | 2008-10-03 | 2010-05-26 | 香港科技大学 | AlGaN/GaN高电子迁移率晶体管 |
CN103811541A (zh) * | 2012-11-08 | 2014-05-21 | Lg伊诺特有限公司 | 功率半导体器件 |
CN104037217A (zh) * | 2014-07-02 | 2014-09-10 | 西安电子科技大学 | 一种基于复合偶极层的AlGaN/GaN HEMT开关器件结构及制作方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017201947A1 (zh) * | 2016-05-25 | 2017-11-30 | 华讯方舟科技有限公司 | 具备场板和低掺杂漏区的晶体管 |
CN110663105A (zh) * | 2017-05-31 | 2020-01-07 | 三菱电机株式会社 | 半导体装置的制造方法 |
CN110663105B (zh) * | 2017-05-31 | 2023-06-06 | 三菱电机株式会社 | 半导体装置的制造方法 |
CN109545850A (zh) * | 2017-09-22 | 2019-03-29 | 新唐科技股份有限公司 | 半导体元件及其制造方法 |
CN109545850B (zh) * | 2017-09-22 | 2021-12-31 | 新唐科技股份有限公司 | 半导体元件及其制造方法 |
CN111129118A (zh) * | 2019-12-27 | 2020-05-08 | 英诺赛科(珠海)科技有限公司 | 半导体器件及其制造方法 |
US11784221B2 (en) | 2019-12-27 | 2023-10-10 | Innoscienc (Zhuhai) Technology Co., Ltd. | Semiconductor device and manufacturing method therefor |
US11837633B2 (en) | 2019-12-27 | 2023-12-05 | Innoscience (Zhuhai) Technology Co., Ltd. | Semiconductor device and manufacturing method therefor |
WO2022000269A1 (en) * | 2020-06-30 | 2022-01-06 | Innoscience (Zhuhai) Technology Co., Ltd. | Semiconductor device and fabrication method thereof |
CN113066726A (zh) * | 2021-03-19 | 2021-07-02 | 弘大芯源(深圳)半导体有限公司 | 一种新型场效应晶体管的实现方法 |
CN113066726B (zh) * | 2021-03-19 | 2021-11-16 | 弘大芯源(深圳)半导体有限公司 | 一种场效应晶体管的实现方法 |
WO2024131020A1 (zh) * | 2022-12-22 | 2024-06-27 | 武汉华星光电半导体显示技术有限公司 | 显示面板及显示设备 |
Also Published As
Publication number | Publication date |
---|---|
WO2017201947A1 (zh) | 2017-11-30 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
CB02 | Change of applicant information |
Address after: 518102 Guangdong city of Shenzhen province Baoan District Xixiang Bao Tian Yi Lu Chen Tian Industrial District thirty-seventh Building 1 floor and 2 floor on the West Applicant after: Shenzhen Huaxunark Technology Co., Ltd. Applicant after: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY CO., LTD. Address before: 518102 Guangdong city of Shenzhen province Baoan District Xixiang Bao Tian Yi Lu Chen Tian Industrial District thirty-seventh Building 1 floor and 2 floor on the West Applicant before: Shenzhen City Huaxun Fangzhou Technology Co., Ltd. Applicant before: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY CO., LTD. |
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COR | Change of bibliographic data | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Ding Qing Inventor after: Wu Guangsheng Inventor after: Li Xiaocong Inventor after: Wang Jiajia Inventor before: Wang Jiajia Inventor before: Ding Qing |
|
AD01 | Patent right deemed abandoned | ||
AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20200911 |