JP2014096559A - 電力半導体素子 - Google Patents
電力半導体素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 295
- 238000002955 isolation Methods 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 150000002500 ions Chemical class 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 7
- 229910052788 barium Inorganic materials 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 226
- 238000000034 method Methods 0.000 description 25
- 230000008569 process Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000005533 two-dimensional electron gas Effects 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- -1 InN Chemical compound 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
【解決手段】電力半導体素子100Aは、基板110と、該基板110上に設けられた第1の半導体層120と、該第1の半導体層120上に設けられた第2の半導体層130と、第2の半導体層130上に設けられ、第2の半導体層130の一部を露出させる第3の半導体層150と、該第3の半導体層150を通して露出された第2の半導体層130上に設けられたゲート電極163と、第3の半導体層150上においてゲート電極163を挟んで互いに離れて設けられたソース電極161及びドレイン電極162と、を備え、ゲート電極163とドレイン電極162との間の第3の半導体層150に電気的分離領域150aが設けられている。
【選択図】図3
Description
110 基板
115 遷移層
120 第1の半導体層
130 第2の半導体層
140 異種接合構造
150 第3の半導体層
150a 電気的分離領域
161 ソース電極
162 ドレイン電極
163 ゲート電極
170 パシベーション層
Claims (20)
- 基板と、
前記基板上の第1の半導体層と、
前記第1の半導体層上の第2の半導体層と、
前記第2の半導体層上に設けられ、前記第2の半導体層の一部を露出させる第3の半導体層と、
前記第3の半導体層を通して露出された前記第2の半導体層上のゲート電極と、
前記第3の半導体層上において前記ゲート電極を挟んで互いに離れて設けられたソース電極及びドレイン電極と、
を備え、
前記ゲート電極と前記ドレイン電極との間の第3の半導体層に電気的分離領域が設けられている、電力半導体素子。 - 前記電気的分離領域が前記ドレイン電極に隣接している、請求項1に記載の電力半導体素子。
- 前記電気的分離領域は、前記第3の半導体層から前記第2の半導体層の一部まで延びている、請求項1又は2に記載の電力半導体素子。
- 前記電気的分離領域に注入されるイオンは、前記第3の半導体層の導電型と異なるタイプの導電型を有する、請求項1乃至3に記載の電力半導体素子。
- 前記第2の半導体層と接する前記第1の半導体層の界面にチャンネル層が設けられており、前記電気的分離領域は前記チャンネル層と離れている、請求項1乃至4のいずれかに記載の電力半導体素子。
- 前記電気的分離領域は、Mg、Zn、Ca、Sr、Ba、Fe又はArのいずれか1種を含む、請求項1乃至5のいずれかに記載の電力半導体素子。
- 前記ゲート電極は前記第2の半導体層に接する、請求項1乃至6のいずれかに記載の電力半導体素子。
- 前記ゲート電極は、前記第2の半導体層に連結された部分の幅が、前記第2の半導体層に連結された部分と反対側の部分の幅よりも狭い、請求項1乃至7のいずれかに記載の電力半導体素子。
- 前記第3の半導体層により露出された前記第2の半導体層の幅は、前記ゲート電極の長さに対応する、請求項1乃至8のいずれかに記載の電力半導体素子。
- 前記第2の半導体層はリセス部を有し、前記ゲート電極は、前記リセス部に設けられている、請求項1乃至9のいずれかに記載の電力半導体素子。
- 前記第2の半導体層に設けられた電気的分離領域の厚さは、前記第2の半導体層全体の膜厚よりも小さい、請求項3又は5に記載の電力半導体素子。
- 前記リセス部は、前記第3の半導体層により露出された第2の半導体層の領域に対応する、請求項10に記載の電力半導体素子。
- 前記第3の半導体層の上部にパシベーション層が設けられている、請求項1乃至12のいずれかに記載の電力半導体素子。
- ソース電極、ドレイン電極、及び前記ソース電極と前記ドレイン電極との間のゲート電極と、
前記ソース電極及び前記ドレイン電極の下部に設けられており、且つ前記ゲート電極の長さに対応する幅を有するオープン領域を有している第3の半導体層と、
前記第3の半導体層の下部に設けられており、前記オープン領域を通して前記ゲート電極と連結された第2の半導体層と、
前記第2の半導体層の下部に設けられた第1の半導体層と、
を備え、
前記第3の半導体層は、前記ゲート電極に隣接した第1の領域、前記ドレイン電極に隣接した第2の領域、及び前記第1の領域と前記第2の領域との間の第3の領域を有し、前記第3の領域は、前記第1の領域と前記第2の領域とを電気的に分離させる、電力半導体素子。 - 前記第3の領域は、前記第3の半導体層の導電型と異なるタイプの導電型を有するイオンが注入された電気的分離領域である、請求項14に記載の電力半導体素子。
- 前記第3の領域が前記ドレイン電極に隣接して設けられている、請求項14又は15に記載の電力半導体素子。
- 前記第3の領域は、Mg、Zn、Ca、Sr、Ba、Fe又はArのいずれか1種を含む、請求項14乃至16のいずれかに記載の電力半導体素子。
- 前記第1の半導体層の下部に基板をさらに備え、該基板と前記第1の半導体層との間に遷移層が配置されている、請求項14乃至17のいずれかに記載の電力半導体素子。
- 前記第2の半導体層はリセス部を有し、前記ゲート電極は、前記リセス部に設けられている、請求項14乃至18のいずれかに記載の電力半導体素子。
- 基板と、
前記基板上に設けられた第1の半導体層と、
前記第1の半導体層上に設けられた第2の半導体層と、
前記第2の半導体層上に設けられ、前記第2の半導体層の一部を露出させる第3の半導体層と、
前記第3の半導体層を通して露出された前記第2の半導体層上に設けられたゲート電極と、
前記第3の半導体層上において前記ゲート電極を挟んで互いに離れて設けられたソース電極及びドレイン電極と、
を備え、
前記第3の半導体層は、前記ゲート電極と前記ドレイン電極との間において、前記ゲート電極に隣接した部分と前記ドレイン電極に隣接した部分とが電気的に分離されている、電力半導体素子。
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CN104282735A (zh) * | 2014-09-17 | 2015-01-14 | 电子科技大学 | 一种具有负离子注入钝化层的场效应晶体管 |
ITUB20155862A1 (it) | 2015-11-24 | 2017-05-24 | St Microelectronics Srl | Transistore di tipo normalmente spento con ridotta resistenza in stato acceso e relativo metodo di fabbricazione |
CN105826370A (zh) * | 2016-05-25 | 2016-08-03 | 深圳市华讯方舟科技有限公司 | 晶体管 |
US11888051B2 (en) * | 2020-05-08 | 2024-01-30 | Globalfoundries Singapore Pte. Ltd. | Structures for a high-electron-mobility transistor and related methods |
CN115224124A (zh) | 2021-04-20 | 2022-10-21 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
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CN103811541B (zh) | 2019-01-15 |
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