EP2731143A3 - Power semiconductor device - Google Patents
Power semiconductor device Download PDFInfo
- Publication number
- EP2731143A3 EP2731143A3 EP13179593.2A EP13179593A EP2731143A3 EP 2731143 A3 EP2731143 A3 EP 2731143A3 EP 13179593 A EP13179593 A EP 13179593A EP 2731143 A3 EP2731143 A3 EP 2731143A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- region
- semiconductor layer
- electrode
- semiconductor device
- power semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title abstract 9
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0646—PN junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120125842A KR102024290B1 (ko) | 2012-11-08 | 2012-11-08 | 전력 반도체 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2731143A2 EP2731143A2 (en) | 2014-05-14 |
EP2731143A3 true EP2731143A3 (en) | 2017-08-23 |
Family
ID=48917442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP13179593.2A Withdrawn EP2731143A3 (en) | 2012-11-08 | 2013-08-07 | Power semiconductor device |
Country Status (5)
Country | Link |
---|---|
US (1) | US8723228B1 (ja) |
EP (1) | EP2731143A3 (ja) |
JP (1) | JP6228747B2 (ja) |
KR (1) | KR102024290B1 (ja) |
CN (1) | CN103811541B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104282735A (zh) * | 2014-09-17 | 2015-01-14 | 电子科技大学 | 一种具有负离子注入钝化层的场效应晶体管 |
ITUB20155862A1 (it) * | 2015-11-24 | 2017-05-24 | St Microelectronics Srl | Transistore di tipo normalmente spento con ridotta resistenza in stato acceso e relativo metodo di fabbricazione |
CN105826370A (zh) * | 2016-05-25 | 2016-08-03 | 深圳市华讯方舟科技有限公司 | 晶体管 |
US11476359B2 (en) * | 2019-03-18 | 2022-10-18 | Wolfspeed, Inc. | Structures for reducing electron concentration and process for reducing electron concentration |
US11888051B2 (en) * | 2020-05-08 | 2024-01-30 | Globalfoundries Singapore Pte. Ltd. | Structures for a high-electron-mobility transistor and related methods |
CN115224124A (zh) | 2021-04-20 | 2022-10-21 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6294801B1 (en) * | 1998-05-01 | 2001-09-25 | Oki Electric Industry Co., Ltd. | Semiconductor device with Schottky layer |
DE102010016993A1 (de) * | 2010-05-18 | 2011-11-24 | United Monolithic Semiconductors Gmbh | Halbleiter-Bauelement |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0936134A (ja) * | 1995-07-25 | 1997-02-07 | Matsushita Electron Corp | 半導体装置及びその製造方法 |
JP3206520B2 (ja) * | 1997-10-06 | 2001-09-10 | 日本電気株式会社 | 半導体記憶装置とその製造方法 |
JP2007194588A (ja) * | 2005-12-20 | 2007-08-02 | Sony Corp | 電界効果トランジスタ及びこの電界効果トランジスタを備えた半導体装置並びに半導体装置の製造方法 |
JP2007311684A (ja) * | 2006-05-22 | 2007-11-29 | Mitsubishi Electric Corp | 電界効果型トランジスタ |
PT2080228T (pt) * | 2006-10-04 | 2020-12-23 | Leonardo Spa | Dispositivo de alimentação de transístor pseudomórfico de alta mobilidade de eletrões (phemt) com tensão de alimentação única e processo para o fabrico do mesmo |
CN101604704B (zh) * | 2008-06-13 | 2012-09-05 | 西安能讯微电子有限公司 | Hemt器件及其制造方法 |
JP2010135640A (ja) * | 2008-12-05 | 2010-06-17 | Panasonic Corp | 電界効果トランジスタ |
JP5730505B2 (ja) * | 2010-06-23 | 2015-06-10 | 富士通株式会社 | 化合物半導体装置 |
JP2012054471A (ja) * | 2010-09-02 | 2012-03-15 | Fujitsu Ltd | 半導体装置及びその製造方法、電源装置 |
JP5685917B2 (ja) * | 2010-12-10 | 2015-03-18 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
JP5866766B2 (ja) * | 2011-02-10 | 2016-02-17 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
-
2012
- 2012-11-08 KR KR1020120125842A patent/KR102024290B1/ko active IP Right Grant
-
2013
- 2013-03-12 US US13/796,688 patent/US8723228B1/en active Active
- 2013-04-11 JP JP2013082669A patent/JP6228747B2/ja active Active
- 2013-05-13 CN CN201310175270.1A patent/CN103811541B/zh active Active
- 2013-08-07 EP EP13179593.2A patent/EP2731143A3/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6294801B1 (en) * | 1998-05-01 | 2001-09-25 | Oki Electric Industry Co., Ltd. | Semiconductor device with Schottky layer |
DE102010016993A1 (de) * | 2010-05-18 | 2011-11-24 | United Monolithic Semiconductors Gmbh | Halbleiter-Bauelement |
Non-Patent Citations (1)
Title |
---|
ARULKUMARAN S ET AL: "ON THE EFFECTS OF GATE-RECESS ETCHING IN CURRENT-COLLAPSE OF DIFFERENT CAP LAYERS GROWN ALGAN/GAN HIGH-ELECTRON-MOBILITY TRANSISTORS", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 45, no. 8, March 2006 (2006-03-01), pages L220 - L223, XP001245503, ISSN: 0021-4922, DOI: 10.1143/JJAP.45.L220 * |
Also Published As
Publication number | Publication date |
---|---|
EP2731143A2 (en) | 2014-05-14 |
CN103811541B (zh) | 2019-01-15 |
US20140124836A1 (en) | 2014-05-08 |
JP2014096559A (ja) | 2014-05-22 |
US8723228B1 (en) | 2014-05-13 |
CN103811541A (zh) | 2014-05-21 |
JP6228747B2 (ja) | 2017-11-08 |
KR102024290B1 (ko) | 2019-11-04 |
KR20140059410A (ko) | 2014-05-16 |
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RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 29/423 20060101ALN20170720BHEP Ipc: H01L 29/20 20060101ALN20170720BHEP Ipc: H01L 29/06 20060101ALI20170720BHEP Ipc: H01L 29/34 20060101ALI20170720BHEP Ipc: H01L 21/338 20060101ALI20170720BHEP Ipc: H01L 29/778 20060101AFI20170720BHEP |
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