PT2080228T - Dispositivo de alimentação de transístor pseudomórfico de alta mobilidade de eletrões (phemt) com tensão de alimentação única e processo para o fabrico do mesmo - Google Patents
Dispositivo de alimentação de transístor pseudomórfico de alta mobilidade de eletrões (phemt) com tensão de alimentação única e processo para o fabrico do mesmoInfo
- Publication number
- PT2080228T PT2080228T PT68217231T PT06821723T PT2080228T PT 2080228 T PT2080228 T PT 2080228T PT 68217231 T PT68217231 T PT 68217231T PT 06821723 T PT06821723 T PT 06821723T PT 2080228 T PT2080228 T PT 2080228T
- Authority
- PT
- Portugal
- Prior art keywords
- phemt
- manufacturing
- power device
- voltage supply
- same
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
- H01L29/7785—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with more than one donor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/IT2006/000705 WO2008041249A1 (en) | 2006-10-04 | 2006-10-04 | Single voltage supply pseudomorphic high electron mobility transistor (phemt) power device and process for manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PT2080228T true PT2080228T (pt) | 2020-12-23 |
Family
ID=38043017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PT68217231T PT2080228T (pt) | 2006-10-04 | 2006-10-04 | Dispositivo de alimentação de transístor pseudomórfico de alta mobilidade de eletrões (phemt) com tensão de alimentação única e processo para o fabrico do mesmo |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8120066B2 (pt) |
| EP (1) | EP2080228B1 (pt) |
| JP (1) | JP2010506397A (pt) |
| CN (1) | CN101636843B (pt) |
| ES (1) | ES2837454T3 (pt) |
| PL (1) | PL2080228T3 (pt) |
| PT (1) | PT2080228T (pt) |
| TW (1) | TWI433317B (pt) |
| WO (1) | WO2008041249A1 (pt) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7573078B2 (en) * | 2004-05-11 | 2009-08-11 | Cree, Inc. | Wide bandgap transistors with multiple field plates |
| US7550783B2 (en) * | 2004-05-11 | 2009-06-23 | Cree, Inc. | Wide bandgap HEMTs with source connected field plates |
| US9773877B2 (en) * | 2004-05-13 | 2017-09-26 | Cree, Inc. | Wide bandgap field effect transistors with source connected field plates |
| US8981876B2 (en) | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
| US7791434B2 (en) * | 2004-12-22 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
| US11791385B2 (en) * | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
| JP5105160B2 (ja) * | 2006-11-13 | 2012-12-19 | クリー インコーポレイテッド | トランジスタ |
| US7884394B2 (en) * | 2009-02-09 | 2011-02-08 | Transphorm Inc. | III-nitride devices and circuits |
| US8902023B2 (en) | 2009-06-24 | 2014-12-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
| US8248185B2 (en) | 2009-06-24 | 2012-08-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator structure comprising a bridge |
| US8384129B2 (en) * | 2009-06-25 | 2013-02-26 | The United States Of America, As Represented By The Secretary Of The Navy | Transistor with enhanced channel charge inducing material layer and threshold voltage control |
| US8324661B2 (en) * | 2009-12-23 | 2012-12-04 | Intel Corporation | Quantum well transistors with remote counter doping |
| US8796904B2 (en) | 2011-10-31 | 2014-08-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer |
| US9243316B2 (en) | 2010-01-22 | 2016-01-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of fabricating piezoelectric material with selected c-axis orientation |
| US8860120B2 (en) * | 2010-09-22 | 2014-10-14 | Nxp, B.V. | Field modulating plate and circuit |
| US8962443B2 (en) | 2011-01-31 | 2015-02-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
| JP5776217B2 (ja) * | 2011-02-24 | 2015-09-09 | 富士通株式会社 | 化合物半導体装置 |
| US9203374B2 (en) | 2011-02-28 | 2015-12-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator comprising a bridge |
| US9099983B2 (en) | 2011-02-28 | 2015-08-04 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator device comprising a bridge in an acoustic reflector |
| US9154112B2 (en) | 2011-02-28 | 2015-10-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge |
| US9425764B2 (en) | 2012-10-25 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having composite electrodes with integrated lateral features |
| US9148117B2 (en) | 2011-02-28 | 2015-09-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge and frame elements |
| US9136818B2 (en) | 2011-02-28 | 2015-09-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked acoustic resonator comprising a bridge |
| US9444426B2 (en) | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
| US9401692B2 (en) | 2012-10-29 | 2016-07-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator having collar structure |
| US8575820B2 (en) | 2011-03-29 | 2013-11-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator |
| US9490771B2 (en) | 2012-10-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar and frame |
| US9490418B2 (en) | 2011-03-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer |
| US9024357B2 (en) * | 2011-04-15 | 2015-05-05 | Stmicroelectronics S.R.L. | Method for manufacturing a HEMT transistor and corresponding HEMT transistor |
| US8350445B1 (en) | 2011-06-16 | 2013-01-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising non-piezoelectric layer and bridge |
| CN102299170B (zh) * | 2011-08-08 | 2013-07-24 | 中国电子科技集团公司第五十五研究所 | 一种砷化镓赝配高电子迁移率晶体管外延材料 |
| CN102280476B (zh) * | 2011-08-08 | 2012-12-19 | 中国电子科技集团公司第五十五研究所 | 一种赝配高电子迁移率晶体管及其制作方法 |
| US8772833B2 (en) * | 2011-09-21 | 2014-07-08 | Electronics And Telecommunications Research Institute | Power semiconductor device and fabrication method thereof |
| WO2013078332A1 (en) * | 2011-11-23 | 2013-05-30 | The General Hospital Corporation | Analyte detection using magnetic hall effect |
| CN103187249B (zh) * | 2011-12-30 | 2016-05-25 | 中国科学院物理研究所 | 一种半导体纳米材料器件的制作方法 |
| US9385684B2 (en) | 2012-10-23 | 2016-07-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator having guard ring |
| KR102024290B1 (ko) * | 2012-11-08 | 2019-11-04 | 엘지이노텍 주식회사 | 전력 반도체 소자 |
| CN103123933A (zh) * | 2012-12-25 | 2013-05-29 | 中国电子科技集团公司第五十五研究所 | 砷化镓赝配高电子迁移率晶体管 |
| US9018056B2 (en) * | 2013-03-15 | 2015-04-28 | The United States Of America, As Represented By The Secretary Of The Navy | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material |
| US9679981B2 (en) | 2013-06-09 | 2017-06-13 | Cree, Inc. | Cascode structures for GaN HEMTs |
| US9847411B2 (en) | 2013-06-09 | 2017-12-19 | Cree, Inc. | Recessed field plate transistor structures |
| US9041061B2 (en) * | 2013-07-25 | 2015-05-26 | International Business Machines Corporation | III-V device with overlapped extension regions using replacement gate |
| CN103943677B (zh) * | 2014-04-16 | 2016-08-17 | 中国科学院半导体研究所 | 一种芯片尺寸级氮化镓基晶体管及其制备方法 |
| JP6659871B2 (ja) * | 2017-04-14 | 2020-03-04 | ダイナックス セミコンダクター インコーポレイテッドＤｙｎａｘ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ，Ｉｎｃ． | 半導体デバイス及びその製造方法 |
| CN106960874A (zh) * | 2017-04-29 | 2017-07-18 | 复旦大学 | 一种提高AlGaN/GaN高电子迁移率场效应器件击穿电压的方法 |
| CN109103243A (zh) * | 2018-07-24 | 2018-12-28 | 厦门市三安集成电路有限公司 | 一种高值电阻的phemt器件 |
| CN113228295A (zh) * | 2018-11-16 | 2021-08-06 | 阿托梅拉公司 | 包括源极/漏极掺杂剂扩散阻挡超晶格以减小接触电阻的半导体器件和相关方法 |
| US11081485B2 (en) * | 2019-10-23 | 2021-08-03 | Win Semiconductors Corp. | Monolithic integrated circuit device having gate-sinking pHEMTs |
| JP7456449B2 (ja) | 2019-11-29 | 2024-03-27 | 日本電信電話株式会社 | 電界効果型トランジスタの製造方法 |
| JPWO2021186651A1 (pt) * | 2020-03-18 | 2021-09-23 | ||
| US20230120951A1 (en) * | 2020-03-18 | 2023-04-20 | Nippon Telegraph And Telephone Corporation | Voltage Current Conversion Device |
| WO2021186653A1 (ja) * | 2020-03-18 | 2021-09-23 | 日本電信電話株式会社 | 電流電圧変換装置 |
| CN113363254B (zh) * | 2021-06-02 | 2024-06-18 | 厦门市三安集成电路有限公司 | 一种半导体器件及其制备方法 |
| CN113363255B (zh) * | 2021-06-02 | 2024-02-27 | 厦门市三安集成电路有限公司 | 一种半导体器件及其制备方法 |
| US11876128B2 (en) * | 2021-09-13 | 2024-01-16 | Walter Tony WOHLMUTH | Field effect transistor |
| CN114373804A (zh) * | 2021-12-14 | 2022-04-19 | 华为技术有限公司 | 赝配高迁移率晶体管、低噪声放大器及相关装置 |
| WO2023191776A1 (en) * | 2022-03-30 | 2023-10-05 | Monde Wireless Inc. | N-polar iii-nitride device structures with a p-type layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0491441A (ja) * | 1990-08-02 | 1992-03-24 | Nikko Kyodo Co Ltd | 電界効果トランジスタの製造方法 |
| US5140386A (en) | 1991-05-09 | 1992-08-18 | Raytheon Company | High electron mobility transistor |
| JPH05152347A (ja) * | 1991-11-28 | 1993-06-18 | Sanyo Electric Co Ltd | 化合物半導体装置 |
| JP3163822B2 (ja) * | 1993-02-23 | 2001-05-08 | セイコーエプソン株式会社 | トランジスタ及びその製造方法 |
| JPH1056168A (ja) * | 1996-08-08 | 1998-02-24 | Mitsubishi Electric Corp | 電界効果トランジスタ |
| US5811844A (en) * | 1997-07-03 | 1998-09-22 | Lucent Technologies Inc. | Low noise, high power pseudomorphic HEMT |
| JP3534624B2 (ja) * | 1998-05-01 | 2004-06-07 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| AU4847799A (en) * | 1998-07-31 | 2000-02-21 | Raytheon Company | High electron mobility transistor |
| US6307221B1 (en) * | 1998-11-18 | 2001-10-23 | The Whitaker Corporation | InxGa1-xP etch stop layer for double recess pseudomorphic high electron mobility transistor structures |
| JP3353764B2 (ja) * | 1999-11-12 | 2002-12-03 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6489639B1 (en) * | 2000-05-24 | 2002-12-03 | Raytheon Company | High electron mobility transistor |
| TWI257179B (en) * | 2000-07-17 | 2006-06-21 | Fujitsu Quantum Devices Ltd | High-speed compound semiconductor device operable at large output power with minimum leakage current |
| US6703638B2 (en) * | 2001-05-21 | 2004-03-09 | Tyco Electronics Corporation | Enhancement and depletion-mode phemt device having two ingap etch-stop layers |
| KR100438895B1 (ko) | 2001-12-28 | 2004-07-02 | 한국전자통신연구원 | 고전자 이동도 트랜지스터 전력 소자 및 그 제조 방법 |
| JP2003206199A (ja) * | 2002-01-16 | 2003-07-22 | Nikko Materials Co Ltd | 化合物半導体結晶 |
| JP2004055788A (ja) * | 2002-07-19 | 2004-02-19 | Sony Corp | 半導体装置 |
| WO2004025707A2 (en) | 2002-09-13 | 2004-03-25 | Arizona Board Of Regents | Active electronic devices based on gallium nitride and its alloys grown on silicon substrates with buffer layers of sicain |
| US7078743B2 (en) * | 2003-05-15 | 2006-07-18 | Matsushita Electric Industrial Co., Ltd. | Field effect transistor semiconductor device |
| KR20070046141A (ko) * | 2004-08-31 | 2007-05-02 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 층 구조에서 다중-스테이지 리세스와 다중-리세스된게이트를 구비한 전계 효과 트랜지스터를 생산하기 위한방법 |
| US11791385B2 (en) * | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
-
2006
- 2006-10-04 CN CN2006800564991A patent/CN101636843B/zh not_active Expired - Fee Related
- 2006-10-04 WO PCT/IT2006/000705 patent/WO2008041249A1/en active Application Filing
- 2006-10-04 PT PT68217231T patent/PT2080228T/pt unknown
- 2006-10-04 EP EP06821723.1A patent/EP2080228B1/en active Active
- 2006-10-04 JP JP2009531017A patent/JP2010506397A/ja active Pending
- 2006-10-04 US US12/444,383 patent/US8120066B2/en active Active
- 2006-10-04 ES ES06821723T patent/ES2837454T3/es active Active
- 2006-10-04 PL PL06821723T patent/PL2080228T3/pl unknown
-
2007
- 2007-10-04 TW TW096137320A patent/TWI433317B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008041249A1 (en) | 2008-04-10 |
| EP2080228B1 (en) | 2020-12-02 |
| CN101636843B (zh) | 2012-06-13 |
| EP2080228A1 (en) | 2009-07-22 |
| TW200834917A (en) | 2008-08-16 |
| US8120066B2 (en) | 2012-02-21 |
| WO2008041249A8 (en) | 2008-08-14 |
| PL2080228T3 (pl) | 2021-04-19 |
| US20100102358A1 (en) | 2010-04-29 |
| ES2837454T3 (es) | 2021-06-30 |
| CN101636843A (zh) | 2010-01-27 |
| JP2010506397A (ja) | 2010-02-25 |
| TWI433317B (zh) | 2014-04-01 |
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