CN103811541B - 功率半导体器件 - Google Patents

功率半导体器件 Download PDF

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Publication number
CN103811541B
CN103811541B CN201310175270.1A CN201310175270A CN103811541B CN 103811541 B CN103811541 B CN 103811541B CN 201310175270 A CN201310175270 A CN 201310175270A CN 103811541 B CN103811541 B CN 103811541B
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CN
China
Prior art keywords
semiconductor layer
gate electrode
region
drain electrode
semiconductor device
Prior art date
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CN201310175270.1A
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English (en)
Chinese (zh)
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CN103811541A (zh
Inventor
吴政勳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
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Publication of CN103811541A publication Critical patent/CN103811541A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/57—Physical imperfections the imperfections being on the surface of the semiconductor body, e.g. the body having a roughened surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201310175270.1A 2012-11-08 2013-05-13 功率半导体器件 Active CN103811541B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2012-0125842 2012-11-08
KR1020120125842A KR102024290B1 (ko) 2012-11-08 2012-11-08 전력 반도체 소자

Publications (2)

Publication Number Publication Date
CN103811541A CN103811541A (zh) 2014-05-21
CN103811541B true CN103811541B (zh) 2019-01-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310175270.1A Active CN103811541B (zh) 2012-11-08 2013-05-13 功率半导体器件

Country Status (5)

Country Link
US (1) US8723228B1 (enExample)
EP (1) EP2731143A3 (enExample)
JP (1) JP6228747B2 (enExample)
KR (1) KR102024290B1 (enExample)
CN (1) CN103811541B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104282735A (zh) * 2014-09-17 2015-01-14 电子科技大学 一种具有负离子注入钝化层的场效应晶体管
ITUB20155862A1 (it) * 2015-11-24 2017-05-24 St Microelectronics Srl Transistore di tipo normalmente spento con ridotta resistenza in stato acceso e relativo metodo di fabbricazione
CN105826370A (zh) * 2016-05-25 2016-08-03 深圳市华讯方舟科技有限公司 晶体管
US11476359B2 (en) * 2019-03-18 2022-10-18 Wolfspeed, Inc. Structures for reducing electron concentration and process for reducing electron concentration
US11888051B2 (en) * 2020-05-08 2024-01-30 Globalfoundries Singapore Pte. Ltd. Structures for a high-electron-mobility transistor and related methods
CN115224124A (zh) 2021-04-20 2022-10-21 联华电子股份有限公司 半导体元件及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101079442A (zh) * 2006-05-22 2007-11-28 三菱电机株式会社 场效应晶体管
CN101636843A (zh) * 2006-10-04 2010-01-27 塞莱斯系统集成公司 单电压源假晶高电子迁移率晶体管(phemt)功率器件及制造方法
CN102239550A (zh) * 2008-12-05 2011-11-09 松下电器产业株式会社 场效应晶体管
CN102637721A (zh) * 2011-02-10 2012-08-15 富士通株式会社 化合物半导体器件、制造器件的方法和电气器件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0936134A (ja) * 1995-07-25 1997-02-07 Matsushita Electron Corp 半導体装置及びその製造方法
JP3206520B2 (ja) * 1997-10-06 2001-09-10 日本電気株式会社 半導体記憶装置とその製造方法
JP3534624B2 (ja) * 1998-05-01 2004-06-07 沖電気工業株式会社 半導体装置の製造方法
JP2007194588A (ja) * 2005-12-20 2007-08-02 Sony Corp 電界効果トランジスタ及びこの電界効果トランジスタを備えた半導体装置並びに半導体装置の製造方法
CN101604704B (zh) * 2008-06-13 2012-09-05 西安能讯微电子有限公司 Hemt器件及其制造方法
DE102010016993A1 (de) * 2010-05-18 2011-11-24 United Monolithic Semiconductors Gmbh Halbleiter-Bauelement
JP5730505B2 (ja) * 2010-06-23 2015-06-10 富士通株式会社 化合物半導体装置
JP2012054471A (ja) * 2010-09-02 2012-03-15 Fujitsu Ltd 半導体装置及びその製造方法、電源装置
JP5685917B2 (ja) * 2010-12-10 2015-03-18 富士通株式会社 半導体装置及び半導体装置の製造方法
JP5776217B2 (ja) * 2011-02-24 2015-09-09 富士通株式会社 化合物半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101079442A (zh) * 2006-05-22 2007-11-28 三菱电机株式会社 场效应晶体管
CN101636843A (zh) * 2006-10-04 2010-01-27 塞莱斯系统集成公司 单电压源假晶高电子迁移率晶体管(phemt)功率器件及制造方法
CN102239550A (zh) * 2008-12-05 2011-11-09 松下电器产业株式会社 场效应晶体管
CN102637721A (zh) * 2011-02-10 2012-08-15 富士通株式会社 化合物半导体器件、制造器件的方法和电气器件

Also Published As

Publication number Publication date
KR20140059410A (ko) 2014-05-16
KR102024290B1 (ko) 2019-11-04
CN103811541A (zh) 2014-05-21
JP2014096559A (ja) 2014-05-22
EP2731143A2 (en) 2014-05-14
US20140124836A1 (en) 2014-05-08
EP2731143A3 (en) 2017-08-23
US8723228B1 (en) 2014-05-13
JP6228747B2 (ja) 2017-11-08

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Effective date of registration: 20210819

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

TR01 Transfer of patent right
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address