JP2014059553A - 表示装置 - Google Patents

表示装置 Download PDF

Info

Publication number
JP2014059553A
JP2014059553A JP2013169467A JP2013169467A JP2014059553A JP 2014059553 A JP2014059553 A JP 2014059553A JP 2013169467 A JP2013169467 A JP 2013169467A JP 2013169467 A JP2013169467 A JP 2013169467A JP 2014059553 A JP2014059553 A JP 2014059553A
Authority
JP
Japan
Prior art keywords
insulating film
film
transistor
oxide semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2013169467A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014059553A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Yoshiharu Hirakata
吉晴 平形
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2013169467A priority Critical patent/JP2014059553A/ja
Publication of JP2014059553A publication Critical patent/JP2014059553A/ja
Publication of JP2014059553A5 publication Critical patent/JP2014059553A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1341—Filling or closing of cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/062—Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2013169467A 2012-08-23 2013-08-19 表示装置 Withdrawn JP2014059553A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013169467A JP2014059553A (ja) 2012-08-23 2013-08-19 表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012184336 2012-08-23
JP2012184336 2012-08-23
JP2013169467A JP2014059553A (ja) 2012-08-23 2013-08-19 表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018226731A Division JP6611898B2 (ja) 2012-08-23 2018-12-03 表示装置

Publications (2)

Publication Number Publication Date
JP2014059553A true JP2014059553A (ja) 2014-04-03
JP2014059553A5 JP2014059553A5 (enExample) 2016-10-06

Family

ID=50147200

Family Applications (8)

Application Number Title Priority Date Filing Date
JP2013169467A Withdrawn JP2014059553A (ja) 2012-08-23 2013-08-19 表示装置
JP2018226731A Active JP6611898B2 (ja) 2012-08-23 2018-12-03 表示装置
JP2019196540A Active JP6903111B2 (ja) 2012-08-23 2019-10-29 表示装置
JP2021103294A Active JP7085676B2 (ja) 2012-08-23 2021-06-22 半導体装置
JP2022091380A Active JP7268227B2 (ja) 2012-08-23 2022-06-06 表示装置
JP2023069306A Active JP7483093B2 (ja) 2012-08-23 2023-04-20 表示装置
JP2024073434A Withdrawn JP2024114691A (ja) 2012-08-23 2024-04-30 表示装置
JP2025116478A Pending JP2025137593A (ja) 2012-08-23 2025-07-10 表示装置

Family Applications After (7)

Application Number Title Priority Date Filing Date
JP2018226731A Active JP6611898B2 (ja) 2012-08-23 2018-12-03 表示装置
JP2019196540A Active JP6903111B2 (ja) 2012-08-23 2019-10-29 表示装置
JP2021103294A Active JP7085676B2 (ja) 2012-08-23 2021-06-22 半導体装置
JP2022091380A Active JP7268227B2 (ja) 2012-08-23 2022-06-06 表示装置
JP2023069306A Active JP7483093B2 (ja) 2012-08-23 2023-04-20 表示装置
JP2024073434A Withdrawn JP2024114691A (ja) 2012-08-23 2024-04-30 表示装置
JP2025116478A Pending JP2025137593A (ja) 2012-08-23 2025-07-10 表示装置

Country Status (3)

Country Link
US (1) US10008630B2 (enExample)
JP (8) JP2014059553A (enExample)
KR (1) KR20140026257A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160073620A (ko) * 2014-12-17 2016-06-27 엘지디스플레이 주식회사 유기 발광 표시 장치
WO2018128158A1 (ja) * 2017-01-04 2018-07-12 積水化学工業株式会社 液晶表示素子用シール剤、上下導通材料、及び、液晶表示素子
JP2020013131A (ja) * 2014-04-25 2020-01-23 株式会社半導体エネルギー研究所 表示装置
WO2020224104A1 (zh) * 2019-05-09 2020-11-12 深圳市华星光电技术有限公司 阵列基板及液晶显示面板
JP2022171682A (ja) * 2014-10-28 2022-11-11 株式会社半導体エネルギー研究所 表示装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015052991A1 (ja) * 2013-10-09 2015-04-16 シャープ株式会社 半導体装置およびその製造方法
KR102107008B1 (ko) * 2013-12-16 2020-05-29 삼성디스플레이 주식회사 유기 발광 표시장치 및 그의 제조방법
JP2015200753A (ja) * 2014-04-07 2015-11-12 株式会社ジャパンディスプレイ 表示装置
CN104600222B (zh) * 2015-02-04 2016-10-19 京东方科技集团股份有限公司 封装方法、显示面板及显示装置
US9964799B2 (en) * 2015-03-17 2018-05-08 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
CN115954389A (zh) 2016-03-04 2023-04-11 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
CN108781491B (zh) * 2016-09-16 2021-12-14 积水化学工业株式会社 有机电致发光显示元件用密封剂
CN110808270A (zh) * 2019-11-12 2020-02-18 杭州追猎科技有限公司 一种有机发光面板封装结构
KR20220082982A (ko) * 2020-12-10 2022-06-20 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0990373A (ja) * 1995-09-27 1997-04-04 Sharp Corp 液晶表示装置とその製造方法
JP2004063126A (ja) * 2002-07-25 2004-02-26 Sanyo Electric Co Ltd 有機ｅｌパネル
JP2005209631A (ja) * 2003-12-26 2005-08-04 Semiconductor Energy Lab Co Ltd 発光装置、電子機器、および発光装置の作製方法
JP2007128741A (ja) * 2005-11-04 2007-05-24 Seiko Epson Corp 有機ｅｌ発光装置および電子機器、有機ｅｌ発光装置の製造方法
JP2007248743A (ja) * 2006-03-15 2007-09-27 Seiko Epson Corp 液晶装置及びその製造方法、並びに電子機器
JP2008281988A (ja) * 2007-04-09 2008-11-20 Canon Inc 発光装置とその作製方法
JP2008288376A (ja) * 2007-05-17 2008-11-27 Toshiba Matsushita Display Technology Co Ltd 表示装置および表示装置の製造方法
WO2009054159A1 (ja) * 2007-10-23 2009-04-30 Sharp Kabushiki Kaisha 表示装置及び表示装置の製造方法
JP2009139394A (ja) * 2007-12-03 2009-06-25 Mitsubishi Electric Corp 半透過型液晶表示装置、及びその製造方法
JP2011070797A (ja) * 2009-09-24 2011-04-07 Toshiba Corp 封止体の製造方法および有機ｅｌ装置
JP2011118377A (ja) * 2009-10-30 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2012011268A1 (ja) * 2010-07-23 2012-01-26 パナソニック株式会社 表示パネル及びその製造方法
JP2012134475A (ja) * 2010-12-03 2012-07-12 Semiconductor Energy Lab Co Ltd 酸化物半導体膜および半導体装置
WO2012105189A1 (ja) * 2011-02-01 2012-08-09 シャープ株式会社 表示装置及びその製造方法

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2728880B2 (ja) * 1988-01-28 1998-03-18 シャープ株式会社 薄膜半導体装置およびその製造方法
JPH0727900B2 (ja) * 1988-06-28 1995-03-29 松下電器産業株式会社 半導体装置の製造方法
JP2978176B2 (ja) * 1989-03-23 1999-11-15 松下電器産業株式会社 アクティブマトリクス基板の製造方法及び表示装置の製造方法
JPH03116778A (ja) * 1989-09-28 1991-05-17 Matsushita Electric Ind Co Ltd アクティブマトリクス基板の製造方法と表示装置の製造方法
JPH06104434A (ja) * 1992-09-18 1994-04-15 Sharp Corp 薄膜トランジスタ素子，アクティブマトリクス表示装置及びイメージセンサ
WO1997046052A1 (en) 1996-05-28 1997-12-04 Philips Electronics N.V. Organic electroluminescent device
US6288764B1 (en) 1996-06-25 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Display device or electronic device having liquid crystal display panel
JP4068219B2 (ja) * 1997-10-21 2008-03-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100586240B1 (ko) 2000-05-18 2006-06-02 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
US6605826B2 (en) 2000-08-18 2003-08-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
US6924594B2 (en) 2000-10-03 2005-08-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
KR100763408B1 (ko) * 2001-08-21 2007-10-04 엘지.필립스 엘시디 주식회사 액정 표시 장치
US7042024B2 (en) * 2001-11-09 2006-05-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus and method for manufacturing the same
JP3939140B2 (ja) * 2001-12-03 2007-07-04 株式会社日立製作所 液晶表示装置
JP4741177B2 (ja) * 2003-08-29 2011-08-03 株式会社半導体エネルギー研究所 表示装置の作製方法
WO2005041311A1 (en) * 2003-10-28 2005-05-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same, and liquid crystal television reciever
JP4588312B2 (ja) 2003-12-02 2010-12-01 株式会社半導体エネルギー研究所 発光装置の作製方法
US7792489B2 (en) 2003-12-26 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, electronic appliance, and method for manufacturing light emitting device
KR100581903B1 (ko) * 2004-03-09 2006-05-22 삼성에스디아이 주식회사 전계 발광 디스플레이 장치
KR101167304B1 (ko) 2004-12-31 2012-07-19 엘지디스플레이 주식회사 프린지 필드 스위칭 타입의 박막 트랜지스터 기판 및 그제조 방법
KR101146523B1 (ko) * 2005-03-25 2012-06-01 엘지디스플레이 주식회사 횡전계형 액정표시장치용 기판 및 그의 제조방법
KR20060121370A (ko) * 2005-05-24 2006-11-29 삼성전자주식회사 액정표시장치의 제조방법과 이에 의한 액정표시장치
EP1998373A3 (en) * 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
KR101275941B1 (ko) * 2005-12-30 2013-06-25 엘지디스플레이 주식회사 액정표시장치 및 그 제조 방법
KR100685854B1 (ko) * 2006-01-25 2007-02-22 삼성에스디아이 주식회사 유기전계발광표시장치 및 그 제조방법
KR100688791B1 (ko) * 2006-01-27 2007-03-02 삼성에스디아이 주식회사 유기 전계 발광 표시장치 및 그 제조 방법.
US7731377B2 (en) * 2006-03-21 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Backlight device and display device
JP2007335780A (ja) * 2006-06-19 2007-12-27 Mitsubishi Electric Corp Ｔｆｔ基板及びその製造方法、これを用いた表示装置、並びに層間絶縁膜の評価方法
JP4564472B2 (ja) * 2006-07-11 2010-10-20 エルジー ディスプレイ カンパニー リミテッド 液晶表示装置及びその製造方法
KR20080060397A (ko) * 2006-12-27 2008-07-02 엘지디스플레이 주식회사 액정표시장치
WO2008126879A1 (en) 2007-04-09 2008-10-23 Canon Kabushiki Kaisha Light-emitting apparatus and production method thereof
JP2009116064A (ja) * 2007-11-07 2009-05-28 Toshiba Matsushita Display Technology Co Ltd 液晶表示装置
JP5213422B2 (ja) * 2007-12-04 2013-06-19 キヤノン株式会社 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置
EP2146379B1 (en) 2008-07-14 2015-01-28 Samsung Electronics Co., Ltd. Transistor comprising ZnO based channel layer
TWI642113B (zh) 2008-08-08 2018-11-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP4650703B2 (ja) 2008-12-25 2011-03-16 ソニー株式会社 表示パネルおよびモジュール並びに電子機器
KR101929726B1 (ko) 2009-07-18 2018-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
CN102473734B (zh) 2009-07-31 2015-08-12 株式会社半导体能源研究所 半导体装置及其制造方法
KR101293261B1 (ko) 2009-10-21 2013-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치를 갖는 전자 기기
KR20120093952A (ko) * 2009-11-06 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자 및 반도체 장치 제조 방법과, 성막 장치
WO2011062043A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20110119420A (ko) * 2010-04-27 2011-11-02 엘지디스플레이 주식회사 평판 표시 장치 및 액정 표시 장치
US9490368B2 (en) * 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8552425B2 (en) * 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012043338A1 (ja) * 2010-09-28 2012-04-05 凸版印刷株式会社 薄膜トランジスタ及びその製造方法、薄膜トランジスタを備える画像表示装置
KR20120044020A (ko) * 2010-10-27 2012-05-07 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
KR20120063809A (ko) 2010-12-08 2012-06-18 삼성전자주식회사 박막 트랜지스터 표시판
JP6035007B2 (ja) * 2010-12-10 2016-11-30 富士通株式会社 Ｍｉｓ型の窒化物半導体ｈｅｍｔ及びその製造方法
KR20120085057A (ko) 2011-01-21 2012-07-31 삼성디스플레이 주식회사 액정표시장치 및 그 제조방법
JP2012255840A (ja) * 2011-06-07 2012-12-27 Japan Display West Co Ltd 表示装置および電子機器
JP6059566B2 (ja) 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102295737B1 (ko) 2012-05-10 2021-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스
KR20200019269A (ko) * 2012-06-29 2020-02-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0990373A (ja) * 1995-09-27 1997-04-04 Sharp Corp 液晶表示装置とその製造方法
US6204907B1 (en) * 1995-09-27 2001-03-20 Sharp Kabushiki Kaisha Liquid crystal display device and manufacturing method thereof
JP2004063126A (ja) * 2002-07-25 2004-02-26 Sanyo Electric Co Ltd 有機ｅｌパネル
JP2005209631A (ja) * 2003-12-26 2005-08-04 Semiconductor Energy Lab Co Ltd 発光装置、電子機器、および発光装置の作製方法
JP2007128741A (ja) * 2005-11-04 2007-05-24 Seiko Epson Corp 有機ｅｌ発光装置および電子機器、有機ｅｌ発光装置の製造方法
JP2007248743A (ja) * 2006-03-15 2007-09-27 Seiko Epson Corp 液晶装置及びその製造方法、並びに電子機器
JP2008281988A (ja) * 2007-04-09 2008-11-20 Canon Inc 発光装置とその作製方法
JP2008288376A (ja) * 2007-05-17 2008-11-27 Toshiba Matsushita Display Technology Co Ltd 表示装置および表示装置の製造方法
WO2009054159A1 (ja) * 2007-10-23 2009-04-30 Sharp Kabushiki Kaisha 表示装置及び表示装置の製造方法
JP2009139394A (ja) * 2007-12-03 2009-06-25 Mitsubishi Electric Corp 半透過型液晶表示装置、及びその製造方法
JP2011070797A (ja) * 2009-09-24 2011-04-07 Toshiba Corp 封止体の製造方法および有機ｅｌ装置
JP2011118377A (ja) * 2009-10-30 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2012011268A1 (ja) * 2010-07-23 2012-01-26 パナソニック株式会社 表示パネル及びその製造方法
JP2012134475A (ja) * 2010-12-03 2012-07-12 Semiconductor Energy Lab Co Ltd 酸化物半導体膜および半導体装置
WO2012105189A1 (ja) * 2011-02-01 2012-08-09 シャープ株式会社 表示装置及びその製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020013131A (ja) * 2014-04-25 2020-01-23 株式会社半導体エネルギー研究所 表示装置
US11199920B2 (en) 2014-04-25 2021-12-14 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US11669181B2 (en) 2014-04-25 2023-06-06 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP2022171682A (ja) * 2014-10-28 2022-11-11 株式会社半導体エネルギー研究所 表示装置
JP7495964B2 (ja) 2014-10-28 2024-06-05 株式会社半導体エネルギー研究所 表示装置
JP2024110977A (ja) * 2014-10-28 2024-08-16 株式会社半導体エネルギー研究所 表示装置
US12230647B2 (en) 2014-10-28 2025-02-18 Semiconductor Energy Laboratory Co., Ltd. Display device, manufacturing method of display device, and electronic device
KR20160073620A (ko) * 2014-12-17 2016-06-27 엘지디스플레이 주식회사 유기 발광 표시 장치
KR102391904B1 (ko) 2014-12-17 2022-04-27 엘지디스플레이 주식회사 유기 발광 표시 장치
WO2018128158A1 (ja) * 2017-01-04 2018-07-12 積水化学工業株式会社 液晶表示素子用シール剤、上下導通材料、及び、液晶表示素子
CN109219772A (zh) * 2017-01-04 2019-01-15 积水化学工业株式会社 液晶显示元件用密封剂、上下导通材料和液晶显示元件
WO2020224104A1 (zh) * 2019-05-09 2020-11-12 深圳市华星光电技术有限公司 阵列基板及液晶显示面板

Also Published As

Publication number Publication date
JP7085676B2 (ja) 2022-06-16
JP2025137593A (ja) 2025-09-19
JP7483093B2 (ja) 2024-05-14
JP2022126691A (ja) 2022-08-30
KR20140026257A (ko) 2014-03-05
US10008630B2 (en) 2018-06-26
JP2019070816A (ja) 2019-05-09
JP2023103262A (ja) 2023-07-26
JP6903111B2 (ja) 2021-07-14
JP2024114691A (ja) 2024-08-23
JP7268227B2 (ja) 2023-05-02
JP2021167957A (ja) 2021-10-21
US20140054582A1 (en) 2014-02-27
JP6611898B2 (ja) 2019-11-27
JP2020030419A (ja) 2020-02-27

Similar Documents

Publication Publication Date Title
JP7268227B2 (ja) 表示装置
JP6871328B2 (ja) 半導体装置
JP6457573B2 (ja) 半導体装置
JP6077806B2 (ja) 半導体装置の作製方法
JP6305580B2 (ja) 半導体装置およびその作製方法
JP6231743B2 (ja) 半導体装置の作製方法
JP5524370B2 (ja) 半導体装置
JP6126484B2 (ja) 表示装置
JP6045285B2 (ja) 半導体装置の作製方法
JP6054474B2 (ja) 半導体装置
TW201140844A (en) Semiconductor device and manufacturing method thereof
JP2013102134A (ja) 半導体装置の作製方法及び半導体装置
TWI651856B (zh) 半導體裝置
JP7664457B2 (ja) 表示装置
JP5873324B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160818

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160818

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170602

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170613

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170719

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180109

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180306

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20180904

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20181204