WO2020224104A1 - 阵列基板及液晶显示面板 - Google Patents

阵列基板及液晶显示面板 Download PDF

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Publication number
WO2020224104A1
WO2020224104A1 PCT/CN2019/102583 CN2019102583W WO2020224104A1 WO 2020224104 A1 WO2020224104 A1 WO 2020224104A1 CN 2019102583 W CN2019102583 W CN 2019102583W WO 2020224104 A1 WO2020224104 A1 WO 2020224104A1
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Prior art keywords
layer
electrode
pixel
pixel electrode
array substrate
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PCT/CN2019/102583
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English (en)
French (fr)
Inventor
李兰艳
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深圳市华星光电技术有限公司
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Publication of WO2020224104A1 publication Critical patent/WO2020224104A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

Definitions

  • LCD Liquid Crystal Display
  • the existing liquid crystal display panel includes a plurality of sub-pixels arranged in an array, and each sub-pixel is electrically connected to a thin film transistor (Thin Film Transistor (TFT), the gate of the TFT is connected to the horizontal gate scan line, the drain is connected to the vertical data line, and the source is connected to the pixel electrode.
  • TFT Thin Film Transistor
  • Applying enough voltage on the gate scan line will turn on all the TFTs electrically connected to the gate scan line, so that the signal voltage on the data line can be written into the pixel, control the transmittance of the liquid crystal, and realize display effect.
  • PFA Polymer Film on Array
  • the use of PFA can not only improve the parasitic capacitance, increase the penetration rate, but also flatten the topography of the substrate, improve the poor splicing (mura), and the PFA has good air permeability and can effectively improve the bubble problem.
  • PFA is an organic material. While having the above advantages, it also brings other disadvantages. Among them, the ion concentration (ion High density) is the most important drawback. Ion concentration refers to the number of ions per unit area of the display panel. The higher the ion concentration, the more likely it is to cause product residual image (Image Sticking, IS).
  • the ion concentration of the product must be well controlled.
  • a gap (Slit) is usually formed between the branch electrodes in each domain on the pixel electrode. The corresponding position, PFA will directly contact the alignment layer, resulting in the ion concentration can not be effectively controlled, affecting product quality.
  • the purpose of the present invention is to provide an array substrate, which can effectively reduce the ion concentration of the product and improve the display effect.
  • the object of the present invention is also to provide a liquid crystal display panel, which can effectively reduce the ion concentration of the product and improve the display effect.
  • each pixel structure includes: a base substrate, a TFT layer provided on the base substrate, and A PFA protective layer on the TFT layer, a pixel electrode provided on the PFA protective layer, and an alignment layer provided on the pixel electrode;
  • the pixel electrode is a continuous and uninterrupted full-surface electrode, and multiple grooves extending in different directions are formed on the pixel electrode.
  • the TFT layer includes a gate provided on the base substrate, a gate insulating layer provided on the gate and the base substrate, and an active gate provided on the gate insulating layer on the gate.
  • a first via hole is also formed on the PFA protection layer, the first via hole penetrates the PFA protection layer to expose a part of the drain, and the pixel electrode passes through the first via hole and the drain Extremely electrical connection.
  • the TFT layer further includes a common electrode provided on the same layer as the gate electrode and separated from the gate electrode, and a capacitor electrode provided on the same layer as the drain electrode and separated from the drain electrode.
  • the common electrodes are opposite.
  • a second via hole is also formed on the PFA protection layer.
  • the first via hole penetrates the PFA protection layer and exposes a part of the capacitor electrode.
  • the pixel electrode passes through the second via hole and the capacitor The electrodes are electrically connected.
  • the pixel electrode includes a cross-shaped trunk and a plurality of strip-shaped branches connected to the trunk and extending to the circumference, the plurality of strip-shaped branches are spaced apart from each other and form an angle with the trunk, and the groove Located between adjacent strip branches.
  • the array substrate further includes a color resist layer provided between the TFT layer and the PFA protective layer.
  • the material of the pixel electrode is ITO, and the material of the alignment layer is PI.
  • the pixel electrodes in each pixel structure and the grooves on each pixel electrode are simultaneously formed by a gray-scale photomask or halftone photomask.
  • the present invention also provides a liquid crystal display panel including the above-mentioned array substrate.
  • the present invention provides an array substrate, including a plurality of pixel structures arranged in an array, each pixel structure includes: a base substrate, a TFT layer provided on the base substrate, The PFA protective layer on the TFT layer, the pixel electrode provided on the PFA protective layer, and the alignment layer provided on the pixel electrode; the pixel electrode is a continuous and uninterrupted full-surface electrode, and the pixel electrode Multiple trenches extending in different directions are formed on the surface, and the contact between the PFA protective layer and the alignment layer is reduced by providing the pixel electrode covering the entire surface, which can effectively reduce the ion concentration of the product and improve the display effect.
  • the invention also provides a liquid crystal display panel, which can effectively reduce the ion concentration of the product and improve the display effect.
  • FIG. 1 is a schematic diagram of the first embodiment of the array substrate of the present invention
  • FIG. 2 is a schematic diagram of pixel electrodes of the array substrate of the present invention.
  • FIG. 3 is a schematic diagram of a second embodiment of the array substrate of the present invention.
  • each pixel structure 100 includes: a base substrate 1, a TFT layer 2 provided on the base substrate 1 , The PFA protective layer 3 provided on the TFT layer 2, the pixel electrode 4 provided on the PFA protective layer 3, and the alignment layer 5 provided on the pixel electrode 4;
  • the pixel electrode 4 is a continuous and uninterrupted full-surface electrode, and a plurality of grooves 40 extending in different directions are formed on the pixel electrode 4.
  • the pixel electrode 4 is a rice-shaped electrode with four domains.
  • the detailed structure includes a cross-shaped main stem 41 and a plurality of strip-shaped branches connected to the main stem 41 and respectively extending around. 42.
  • the trunk 41 is divided into four domains distributed in the shape of a field, and each domain is provided with a plurality of mutually spaced and parallel strip-shaped branches 42, and each strip-shaped branch 42 forms an angle with the trunk 41 ,
  • the extending directions of the strip-shaped branches 42 in different domains are different, and the groove 40 is located between adjacent strip-shaped branches 42.
  • the included angle between the strip-shaped branch 42 and the main stem 41 is 30°-60°, more preferably, the included angle is 45°.
  • the TFT layer 2 includes a gate 21 provided on the base substrate 1, a gate insulating layer 22 provided on the gate 21 and the base substrate 1, a device The active layer 23 on the gate insulating layer 22 on the gate 21 and the source 24 and the drain provided on the gate insulating layer 22 that are in contact with both ends of the active layer 23 respectively 25.
  • the active layer 23 includes a non-doped layer 231 and a layer disposed between the non-doped layer 231 and the source electrode 24 and between the non-doped layer 231 and the drain electrode 25.
  • Doped layer 232 Doped layer 232.
  • a first via 31 is formed on the PFA protective layer 3, the first via 31 penetrates the PFA protective layer 3 to expose a part of the drain 25, and the pixel electrode 4 passes through the The first via 31 is electrically connected to the drain 25.
  • the TFT layer 2 further includes a common electrode (A-com) 26 arranged on the same layer as the gate 21 and spaced apart from the gate 21, and a common electrode (A-com) 26 arranged on the same layer as the drain 25 and separated from the gate 21.
  • the capacitor electrode 27 is separated from the drain 25, and the capacitor electrode 27 is opposite to the common electrode 26.
  • a second via 32 is formed on the PFA protection layer 3, and the first via 3 penetrates the PFA protection layer 3 to expose a part of the capacitor electrode 27, and the pixel electrode 4 passes through the The second via hole 32 is electrically connected to the capacitor electrode 27.
  • the gate 21, the active layer 23, the source 24, and the drain 25 jointly form a driving TFT
  • the common electrode 26, the capacitor electrode 27 and the opposite part of the pixel electrode 4 jointly form a storage capacitor.
  • the material of the pixel electrode 4 is indium tin oxide (ITO), and the material of the alignment layer 5 is polyimide (PI).
  • the typical manufacturing process of the array substrate of the present invention can be as follows: first use 4Mask (photomask) or 5Mask process to form the TFT layer 2 of each pixel structure 100, and then coat the PFA protective layer 3 on the TFT layer 2, and pass Exposure and development form a first via 31 and a second via 32 on the PFA protective layer 3, then sputter on the PFA protective layer 3 to form a transparent metal film (such as an ITO film), and coat the transparent metal film Photoresist, and pass a gray-scale mask (Gray Tone mask or half tone mask (Half Tone Mask) simultaneously forms the pixel electrode 4 in each pixel structure 100 and the groove 40 on each pixel electrode 4.
  • 4Mask photomask
  • 5Mask process to form the TFT layer 2 of each pixel structure 100
  • Exposure and development form a first via 31 and a second via 32 on the PFA protective layer 3
  • sputter on the PFA protective layer 3 to form a transparent metal film (
  • the ion of the array substrate of this structure The concentration is 18; the second structure is a structure that uses a PFA protective layer, but does not use a full-surface pixel electrode structure, that is, the full-surface pixel electrode in the present invention is replaced with a traditional non-full-surface Slit structure, and the array substrate of this structure
  • the ion concentration is 540; the third structure is based on the second structure, adding a traditional passivation layer between the PFA protective layer and the pixel electrode.
  • the ion concentration of the array substrate of this structure is 12.
  • the present invention also provides a liquid crystal display panel including the above-mentioned array substrate.
  • the present invention provides an array substrate including a plurality of pixel structures arranged in an array.
  • Each pixel structure includes: a base substrate, a TFT layer provided on the base substrate, and The PFA protective layer on the TFT layer, the pixel electrode provided on the PFA protective layer, and the alignment layer provided on the pixel electrode; the pixel electrode is a continuous and uninterrupted full-surface electrode, and the pixel electrode is Multiple trenches extending in different directions are formed, and the contact between the PFA protective layer and the alignment layer is reduced by providing the pixel electrode covering the entire surface, which can effectively reduce the ion concentration of the product and improve the display effect.
  • the invention also provides a liquid crystal display panel, which can effectively reduce the ion concentration of the product and improve the display effect.

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  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

提供一种阵列基板，包括阵列排布的多个像素结构（100），每一像素结构（100）均包括：衬底基板（1）、设于衬底基板（1）上的TFT层（2）、设于TFT层（2）上的PFA保护层（3）、设于PFA保护层（3）上的像素电极（4）以及设于像素电极（4）上的配向层（5）；像素电极（4）为连续不间断的整面电极，且像素电极（4）上形成有向不同方向延伸的多道沟槽（40），通过设置整面覆盖的像素电极（4）减少PFA保护层（3）与配向层（5）的接触，能够有效降低产品离子浓度，改善显示效果。还提供一种液晶显示面板，包括阵列基板。

Description

阵列基板及液晶显示面板 技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及液晶显示面板。
 背景技术
随着显示技术的发展，液晶显示器（Liquid Crystal Display，LCD）等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有的液晶显示面板包括多个呈阵列式排布的子像素，每个子像素电性连接一个薄膜晶体管（Thin Film Transistor，TFT），该TFT的栅极（Gate）连接至水平方向的栅极扫描线，漏极（Drain）连接至竖直方向的数据线，源极（Source）则连接至像素电极。在栅极扫描线上施加足够的电压，会使得电性连接至该条栅极扫描线上的所有TFT打开，从而数据线上的信号电压能够写入像素，控制液晶的透光度，实现显示效果。
为了液晶显示面板获得更好的广视角特性，改善色偏问题，通常会采取多畴技术（Multi-domain），即将一个子像素划分成多个区域，并使每个区域中的液晶在施加电压后倒伏向不同的方向，从而使各个方向看到的效果趋于平均，一致。实现多畴的典型方法是将一侧的像素电极处理成“米字型”图案， 像素电极图案，其产生的倾斜电场可以诱导不同区域中的液晶分子倒向不同的方向。
随着显示技术的发展，阵列基板侧有机绝缘膜（Polymer Film on array，PFA）被越来越多应用在液晶显示面板上。采用PFA既能很好的改善寄生电容，提高穿透率，还能平坦化基板地形，改善拼接不良（mura），并且PFA透气性能佳，还能有效改善气泡（bubble）问题。但是PFA是有机材料，在具有以上优点的同时，还会带来其他的弊端，其中离子浓度（ion density）高就是最重要的一个弊端，离子浓度是指的是显示面板单位面积内的离子的多少，离子浓度越高越容易导致产品残像（Image Sticking，IS），为了改善产品IS问题，必须很好的控制产品的离子浓度，而在现有技术中，像素电极上各个畴内的分支电极之间通常会形成间隙（Slit），在与间隙对应的位置，PFA会直接与配向层接触，导致离子浓度无法得到有效控制，影响产品质量。
 技术问题
本发明的目的在于提供一种阵列基板，能够有效降低产品离子浓度，改善显示效果。
本发明的目的还在于提供一种液晶显示面板，能够有效降低产品离子浓度，改善显示效果。
 技术解决方案
为实现上述目的，本发明提供了一种阵列基板，包括阵列排布的多个像素结构，每一像素结构均包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的PFA保护层、设于所述PFA保护层上的像素电极以及设于所述像素电极上的配向层；
所述像素电极为连续不间断的整面电极，且所述像素电极上形成有向不同方向延伸的多道沟槽。
所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极及衬底基板上的栅极绝缘层、设于所述栅极上的栅极绝缘层上的有源层以及设于所述栅极绝缘层上的分别与所述有源层的两端接触的源极和漏极。
所述PFA保护层上还形成有第一过孔，所述第一过孔贯穿所述PFA保护层暴露出所述漏极的一部分，所述像素电极通过所述第一过孔与所述漏极电性连接。
所述TFT层还包括与所述栅极同层设置且与所述栅极间隔的公共电极以及与所述漏极同层设置且与所述漏极间隔的电容电极，所述电容电极与所述公共电极相对。
所述PFA保护层上还形成有第二过孔，所述第一过孔贯穿所述PFA保护层暴露出所述电容电极的一部分，所述像素电极通过所述第二过孔与所述电容电极电性连接。
所述像素电极包括十字形的主干以及与所述主干相连并分别向四周延伸的多个条状分支，所述多个条状分支相互间隔且与所述主干形成一夹角，所述沟槽位于相邻的条状分支之间。
所述阵列基板还包括设于所述TFT层与PFA保护层之间的色阻层。
所述像素电极的材料为ITO，所述配向层的材料为PI。
通过一道灰阶光罩或半色调光罩同时形成各个像素结构中的像素电极及各个像素电极上的沟槽。
本发明还提供一种液晶显示面板，包括上述的阵列基板。
 有益效果
本发明的有益效果：本发明提供一种阵列基板，包括阵列排布的多个像素结构，每一像素结构均包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的PFA保护层、设于所述PFA保护层上的像素电极以及设于所述像素电极上的配向层；所述像素电极为连续不间断的整面电极，且所述像素电极上形成有向不同方向延伸的多道沟槽，通过设置整面覆盖的像素电极减少PFA保护层与配向层的接触，能够有效降低产品离子浓度，改善显示效果。本发明还提供一种液晶显示面板，能够有效降低产品离子浓度，改善显示效果。
 附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的阵列基板的第一实施例的示意图；
图2为本发明的阵列基板的像素电极的示意图；
图3为本发明的阵列基板的第二实施例的示意图。
 本发明的实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种阵列基板，包括阵列排布的多个像素结构100，每一像素结构100均包括：衬底基板1、设于所述衬底基板1上的TFT层2、设于所述TFT层2上的PFA保护层3、设于所述PFA保护层3上的像素电极4以及设于所述像素电极4上的配向层5；
结合图2，所述像素电极4为连续不间断的整面电极，且所述像素电极4上形成有向不同方向延伸的多道沟槽40。
具体地，如图2所示，所述像素电极4为米字形电极，具有四个畴，详细结构包括十字形的主干41以及与所述主干41相连并分别向四周延伸的多个条状分支42，所述主干41划分出田字形分布的四个畴，每一个畴内均设有多条相互间隔且平行的条状分支42，每一条状分支42均与所述主干41形成一夹角，不同畴内的条状分支42的延伸方向不同，所述沟槽40位于相邻的条状分支42之间。
所述像素电极4为连续不间断的整面电极，其中所述像素电极4在条状分支42和主干41所在位置的厚度为第一厚度，在沟槽40所在的位置为小于第一厚度的第二厚度，也即所述沟槽40是通过减薄所述像素电极4的厚度形成的。
优选地，所述条状分支42与所述主干41之间的夹角为30°~60°，更优选地，所述夹角为45°。
具体地，如图1所示，所述TFT层2包括设于所述衬底基板1上的栅极21、设于所述栅极21及衬底基板1上的栅极绝缘层22、设于所述栅极21上的栅极绝缘层22上的有源层23以及设于所述栅极绝缘层22上的分别与所述有源层23的两端接触的源极24和漏极25。
具体地，如图1所示，所述有源层23包括非掺杂层231以及设于所述非掺杂层231与源极24之间以及非掺杂层231与漏极25之间的掺杂层232。
进一步地，所述PFA保护层3上还形成有第一过孔31，所述第一过孔31贯穿所述PFA保护层3暴露出所述漏极25的一部分，所述像素电极4通过所述第一过孔31与所述漏极25电性连接。
具体地，所述TFT层2还包括与所述栅极21同层设置且与所述栅极21间隔的公共电极（A-com）26以及与所述漏极25同层设置且与所述漏极25间隔的电容电极27，所述电容电极27与所述公共电极26相对。
进一步地，所述PFA保护层3上还形成有第二过孔32，所述第一过孔3贯穿所述PFA保护层3暴露出所述电容电极27的一部分，所述像素电极4通过所述第二过孔32与所述电容电极27电性连接。
具体地，所述栅极21、有源层23、源极24和漏极25共同形成一驱动TFT，所述公共电极26、电容电极27及像素电极4相对的部分共同形成一存储电容。
具体地，如图3所示，根据需要本发明的阵列基板还可以为阵列彩膜集成（Color-filter on Array，COA）型阵列基板，此时，所述阵列基板还包括设于所述TFT层2与PFA保护层3之间的色阻层7。
具体地，所述像素电极4的材料为氧化铟锡（Indium tin oxide，ITO），所述配向层5的材料为聚酰亚胺（Polyimide，PI）。
进一步地，本发明的阵列基板的典型制作过程可以为：首先采用4Mask（光罩）或5Mask工艺形成各个像素结构100的TFT层2，随后在TFT层2上涂布PFA保护层3，并通过曝光及显影在PFA保护层3上形成第一过孔31和第二过孔32，接着在所述PFA保护层3上溅射形成透明金属薄膜（例如ITO薄膜），并在透明金属薄膜涂布光阻，并通过一道灰阶光罩（Gray Tone Mask）或半色调光罩（Half Tone Mask）同时形成各个像素结构100中的像素电极4及各个像素电极4上的沟槽40。
具体地，所述PFA保护层3的材料为有机光阻材料，该有机光阻材料可以为正型光阻，也可以为负型光阻。
需要说明的是，经过实验观察比较本发明的阵列基板与现有技术的阵列基板的离子浓度，其中本发明的阵列基板的离子浓度为76；现有的阵列基板包括三种结构，第一种结构为未采用PFA保护层的结构，即将本发明中PFA保护层替换为传统的钝化（Passivation，PV）层，且像素电极采用传统的非整面的Slit结构，该结构的阵列基板的离子浓度为18；第二种结构为采用PFA保护层的结构，但未采用整面像素电极结构，即将本发明中整面的像素电极替换为传统的非整面的Slit结构，该结构的阵列基板的离子浓度为540；第三种结构是在第二种结构的基础上，在PFA保护层与像素电极之间增加一个传统的钝化层，该结构的阵列基板的离子浓度为12。
比较上述各结构的离子浓度，可以发现通过本发明的改进能够有效降低产品的离子浓度，并且充分发挥PFA保护层的优势，且无需增加额外的膜层，并且不影响产品的视角。
此外，本发明还提供一种液晶显示面板，包括上述的阵列基板。
综上所述，本发明提供一种阵列基板，包括阵列排布的多个像素结构，每一像素结构均包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的PFA保护层、设于所述PFA保护层上的像素电极以及设于所述像素电极上的配向层；所述像素电极为连续不间断的整面电极，且所述像素电极上形成有向不同方向延伸的多道沟槽，通过设置整面覆盖的像素电极减少PFA保护层与配向层的接触，能够有效降低产品离子浓度，改善显示效果。本发明还提供一种液晶显示面板，能够有效降低产品离子浓度，改善显示效果。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (18)

  1. 一种阵列基板，包括阵列排布的多个像素结构，每一像素结构均包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的PFA保护层、设于所述PFA保护层上的像素电极以及设于所述像素电极上的配向层；
    所述像素电极为连续不间断的整面电极，且所述像素电极上形成有向不同方向延伸的多道沟槽。
  2. 如权利要求1所述的阵列基板，其中，所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极及衬底基板上的栅极绝缘层、设于所述栅极上的栅极绝缘层上的有源层以及设于所述栅极绝缘层上的分别与所述有源层的两端接触的源极和漏极。
  3. 如权利要求2所述的阵列基板，其中，所述PFA保护层上还形成有第一过孔，所述第一过孔贯穿所述PFA保护层暴露出所述漏极的一部分，所述像素电极通过所述第一过孔与所述漏极电性连接。
  4. 如权利要求2所述的阵列基板，其中，所述TFT层还包括与所述栅极同层设置且与所述栅极间隔的公共电极以及与所述漏极同层设置且与所述漏极间隔的电容电极，所述电容电极与所述公共电极相对。
  5. 如权利要求4所述的阵列基板，其中，所述PFA保护层上还形成有第二过孔，所述第二过孔贯穿所述PFA保护层暴露出所述电容电极的一部分，所述像素电极通过所述第二过孔与所述电容电极电性连接。
  6. 如权利要求1所述的阵列基板，其中，所述像素电极包括十字形的主干以及与所述主干相连并分别向四周延伸的多个条状分支，所述多个条状分支相互间隔且与所述主干形成一夹角，所述沟槽位于相邻的条状分支之间。
  7. 如权利要求1所述的阵列基板，还包括设于所述TFT层与PFA保护层之间的色阻层。
  8. 如权利要求1所述的阵列基板，其中，所述像素电极的材料为ITO，所述配向层的材料为PI。
  9. 如权利要求1所述的阵列基板，其中，通过一道灰阶光罩或半色调光罩同时形成各个像素结构中的像素电极及各个像素电极上的沟槽。
  10. 一种液晶显示面板，包括阵列基板；
    所述阵列基板包括阵列排布的多个像素结构，每一像素结构均包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的PFA保护层、设于所述PFA保护层上的像素电极以及设于所述像素电极上的配向层；
    所述像素电极为连续不间断的整面电极，且所述像素电极上形成有向不同方向延伸的多道沟槽。
  11. 如权利要求10所述的液晶显示面板，其中，所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极及衬底基板上的栅极绝缘层、设于所述栅极上的栅极绝缘层上的有源层以及设于所述栅极绝缘层上的分别与所述有源层的两端接触的源极和漏极。
  12. 如权利要求11所述的液晶显示面板，其中，所述PFA保护层上还形成有第一过孔，所述第一过孔贯穿所述PFA保护层暴露出所述漏极的一部分，所述像素电极通过所述第一过孔与所述漏极电性连接。
  13. 如权利要求11所述的液晶显示面板，其中，所述TFT层还包括与所述栅极同层设置且与所述栅极间隔的公共电极以及与所述漏极同层设置且与所述漏极间隔的电容电极，所述电容电极与所述公共电极相对。
  14. 如权利要求13所述的液晶显示面板，其中，所述PFA保护层上还形成有第二过孔，所述第二过孔贯穿所述PFA保护层暴露出所述电容电极的一部分，所述像素电极通过所述第二过孔与所述电容电极电性连接。
  15. 如权利要求10所述的液晶显示面板，其中，所述像素电极包括十字形的主干以及与所述主干相连并分别向四周延伸的多个条状分支，所述多个条状分支相互间隔且与所述主干形成一夹角，所述沟槽位于相邻的条状分支之间。
  16. 如权利要求10所述的液晶显示面板，其中，所述阵列基板还包括设于所述TFT层与PFA保护层之间的色阻层。
  17. 如权利要求10所述的液晶显示面板，其中，所述像素电极的材料为ITO，所述配向层的材料为PI。
  18. 如权利要求10所述的液晶显示面板，其中，通过一道灰阶光罩或半色调光罩同时形成各个像素结构中的像素电极及各个像素电极上的沟槽。
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