WO2013086906A1 - Tft阵列基板及其制作方法和显示装置 - Google Patents

Tft阵列基板及其制作方法和显示装置 Download PDF

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WO2013086906A1
WO2013086906A1 PCT/CN2012/083885 CN2012083885W WO2013086906A1 WO 2013086906 A1 WO2013086906 A1 WO 2013086906A1 CN 2012083885 W CN2012083885 W CN 2012083885W WO 2013086906 A1 WO2013086906 A1 WO 2013086906A1
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electrode
slit
equal
degrees
less
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PCT/CN2012/083885
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English (en)
French (fr)
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铃木照晃
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京东方科技集团股份有限公司
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Priority to US13/703,854 priority Critical patent/US9207508B2/en
Publication of WO2013086906A1 publication Critical patent/WO2013086906A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13373—Disclination line; Reverse tilt
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned

Definitions

  • TFT array substrate manufacturing method thereof and display device
  • Embodiments of the present invention relate to a TFT array substrate, a method of fabricating the same, and a display device. Background technique
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • ADSDS ADvanced Super Dimension Switch
  • ADS is an advanced super-dimensional field conversion technology that forms a multi-dimensional electric field by the electric field generated by the edge of the slit electrode in the same plane and the electric field generated between the slit electrode layer and the plate electrode layer. All the aligned liquid crystal molecules between the slit electrodes in the liquid crystal cell and directly above the electrodes can be rotated, thereby improving the liquid crystal working efficiency and increasing the light transmission efficiency.
  • Advanced super-dimensional field switching technology can improve the picture quality of TFT-LCD products, with high resolution, high transmittance, low power consumption, wide viewing angle, high aperture ratio, low chromatic aberration, push mura, etc. advantage.
  • a general ADS mode TFT array substrate has upper and lower electrodes insulated from each other, and the upper electrode 1 has a slit, that is, a slit electrode, and the lower electrode 2 is a whole surface, that is, a plate electrode.
  • a multi-dimensional electric field is generated between the upper and lower electrodes to rotate the liquid crystal.
  • the corner region A of the slit of the upper electrode 1 which is less than or equal to 90 degrees, a part of the liquid crystal molecules of the region will reversely rotate due to the action of the electric field, that is, the domain is reversely rotated.
  • the transmittance of the liquid crystal is inferior to that in the forward rotation region, so that a disclination line is generated at the boundary between the reverse rotation region and the forward rotation region, and thus the light transmittance in this region is very low and substantially black.
  • the slit shape of the upper electrode 1 of the TFT substrate is improved, and the ends of the original slit are subjected to a sharp angle treatment, and the shape of the slit after the treatment is a crab-leg shape, as shown in FIG. Shown.
  • the effect of the improved TFT substrate on preventing the reverse rotation domain and the misalignment of the liquid crystal generated by the corners of the electrode slit is not obvious, and the light transmittance of the region cannot be significantly improved. Summary of the invention
  • the TFT array substrate provided by the embodiment of the present invention, the manufacturing method thereof and the display device prevent the liquid crystal reverse rotation domain and the disclination line generated by the corners of the electrode slit, thereby improving the light transmittance of the region.
  • Embodiments of the present invention provide a TFT array substrate including upper and lower two-layer electrodes insulated from each other, wherein the upper layer electrode has a slit including at least one pair of angles less than or equal to 90 degrees; the lower layer electrode is a full surface electrode.
  • the lower layer electrode has a defect area, and the defect area corresponds to the angle of the upper layer electrode slit which is less than or equal to 90 degrees.
  • a method for fabricating a TFT array substrate includes: forming a gate line, a gate electrode, and a lower layer electrode on a substrate, wherein a lower layer electrode is formed on the substrate by a patterning process; Forming a defect region on the lower electrode;
  • a protective layer is formed on the upper electrode.
  • the TFT array substrate provided by any embodiment of the present invention, the manufacturing method thereof and the display device include two upper and lower electrodes, wherein the upper electrode has a slit, and the slit includes at least one pair of angles less than or equal to 90 degrees; the lower electrode As a full-surface electrode, the lower electrode has a defect area corresponding to an angle of the upper electrode slit that is less than or equal to 90 degrees.
  • the electric field intensity of the region is weakened, so that part of the liquid crystal molecules in the region undergo reverse rotation domains. There are fewer cases, which in turn will not produce a more pronounced disclination line, which increases the light transmittance of the area.
  • FIG. 1 is a schematic diagram of an electrode structure of an ADS mode TFT array substrate in the prior art
  • FIG. 2 is a schematic diagram of an electrode structure of an ADS mode TFT array substrate in the prior art
  • FIG. 3 is an ADS mode according to an embodiment of the present invention. Schematic diagram of the electrode structure of the TFT array substrate;
  • FIG. 4 is a schematic diagram of an electrode structure of a TFT array substrate in an ADS mode according to another embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of a TFT array substrate in an ADS mode according to an embodiment of the present invention. detailed description
  • the TFT array substrate of the ADS mode provided by the embodiment of the present invention includes: an upper layer electrode 1 having a slit 11 and a lower layer electrode 2 having a whole surface, and at least an upper layer electrode 1 and a lower layer electrode 2 are formed between Insulation.
  • the slit 11 of the upper electrode 1 is a parallelogram and includes at least one pair of angles ⁇ ⁇ less than or equal to 90 degrees, and in this embodiment, the top end of the ⁇ ⁇ may be rounded.
  • the lower electrode 2 has a defect region 21 corresponding to the angle ⁇ ⁇ of the slit 11 of the upper electrode 1.
  • the lower circle in FIG. 3 schematically shows an angle ⁇ of the slit of the upper electrode 1 which is less than or equal to 90 degrees.
  • the defect area 21 of the lower layer electrode 2 may be Is a triangle, wherein the side 211 of the triangle is away from the side 111 of the ⁇ ⁇ , the side 212 of the triangle is away from the side 112 of the ⁇ ⁇ , and the other side 213 of the triangle overlaps the sides 111 and 112 of the corner ⁇ ⁇ , such that the lower electrode 2
  • the defect area 21 corresponds to an angle ⁇ ⁇ of the slit 11 of the upper electrode 1 which is less than or equal to 90 degrees.
  • the liquid crystal molecules when positive liquid crystal is used, the liquid crystal molecules may be initially arranged in the horizontal direction (the left and right direction in FIG. 3) as indicated by the solid arrow 4 in FIG. That is, the initial alignment direction); when the negative liquid crystal is used, the liquid crystal molecules may be arranged in the vertical direction (up and down direction in FIG. 3) as indicated by the dotted arrow 5 in FIG. 3 (ie, the initial alignment direction).
  • the TFT array substrate of the ADS mode includes: an upper layer electrode 1 having a slit 12 and a lower layer electrode 3 having a whole surface, and at least between the upper layer electrode 1 and the lower layer electrode 3 An insulating layer is formed.
  • the slit 12 of the upper electrode 1 is of a crab-leg shape and includes at least one pair of angles ⁇ less than or equal to 90 degrees, and in this embodiment, the tip end of the ⁇ can be rounded.
  • the lower electrode 3 has a defect area 31 corresponding to an angle ⁇ ⁇ of the slit 12 of the upper electrode 1 which is less than or equal to 90 degrees.
  • the lower circle in FIG. 4 schematically shows a corner ⁇ of the slit of the upper electrode 1 which is less than or equal to 90 degrees, and a defect region is taken as an example, and the defect region 31 of the lower electrode 3 is a triangle, wherein the side 311 of the triangle is away from the side 121 of the ⁇ ⁇ , the side 312 of the triangle is away from the side 122 of the ⁇ ⁇ , and the other side 313 of the triangle is overlapped by the sides 121 and 122 of the angle ⁇ ⁇ , such that
  • the liquid crystal molecules when the positive liquid crystal is used, the liquid crystal molecules may be arranged in the horizontal direction (the left and right direction in FIG. 4) as indicated by the solid arrow 4 in FIG. When a negative liquid crystal is used, the liquid crystal molecules may be arranged in the vertical direction (up and down direction in FIG. 4) as indicated by a broken line arrow 5 in FIG.
  • a cross-sectional view of the above array substrate includes: a base substrate 10; having a slit
  • the upper electrode 1 of 12 the lower electrode 3 having the entire surface of the defect region 31, the gate electrode 9, the gate insulating layer 4, the active layer 5, the drain electrode 6, the source electrode 7, and the passivation layer 8.
  • the slit of the upper electrode 1 may have other shapes, and the defect region of the lower electrode may have other shapes as long as the defect region of the lower electrode corresponds to the narrowness of the upper electrode.
  • the ADS mode TFT array substrate provided by any embodiment of the present invention includes upper and lower two-layer electrodes insulated from each other, wherein the upper layer electrode has a slit, and the slit includes at least one pair of angles less than or equal to 90 degrees; the lower layer electrode is A full-surface electrode, the lower electrode has a defect area corresponding to an angle of the upper electrode slit that is less than or equal to 90 degrees.
  • an upper layer electrode having a slit on the passivation layer wherein the slit includes at least one pair of angles less than or equal to 90 degrees, and in the embodiment, the top ends of the angles less than or equal to 90 degrees may be rounded
  • the defect area of the lower layer electrode corresponds to an angle of the upper layer electrode slit of less than or equal to 90 degrees.
  • the slit of the upper electrode may be a parallelogram or a crab leg shape or the like.
  • the defect area of the lower layer electrode may be a triangle or the like, wherein two sides of the triangle respectively correspond to two sides of an angle of less than or equal to 90 degrees away from the slit of the upper layer electrode, and the other side of the triangle overlaps the slit of the upper layer electrode or less The two sides of the angle equal to 90 degrees are such that the defect area of the lower layer electrode corresponds to an angle of the upper layer electrode slit of less than or equal to 90 degrees.
  • the angle of the slit of the upper electrode that is less than or equal to 90 degrees does not overlap with the lower layer electrode in the vertical direction, thereby weakening the electric field strength of the region, and thus some liquid crystal molecules in the region are reversely rotated. There are fewer domains, which in turn does not produce a more pronounced disclination line, which increases the light transmittance of the region.
  • a method for fabricating an ADS mode TFT array substrate wherein a slit is formed on an upper electrode of the substrate, the slit includes at least one pair of angles less than or equal to 90 degrees; and the lower layer electrode is a full surface electrode, A defect region is formed on the lower electrode, and the defect region corresponds to the upper electrode slit An angle less than or equal to 90 degrees.
  • a further embodiment of the present invention further provides a display device, including the foregoing
  • the structure of the array substrate of the TFT array substrate is the same as that of the above embodiment, and will not be described again.
  • the display device is a liquid crystal display device such as a liquid crystal panel, a liquid crystal television, a mobile phone, a liquid crystal display or the like, wherein the TFT array substrate and the opposite substrate face each other to form a liquid crystal cell, and the liquid crystal cell is filled with a liquid crystal material.
  • the opposite substrate is, for example, a color filter substrate.
  • the pixel electrode of each pixel unit of the TFT array substrate is used to control the degree of rotation of the liquid crystal material by an electric field to perform a display operation.
  • the liquid crystal display further includes a backlight that provides backlighting for the array substrate.
  • Another example of the display device is an organic electroluminescence display device in which a TFT array is subjected to a display operation.
  • the above display device may be other types of display devices such as an electronic reader or the like, which does not include a color filter substrate, but includes the array substrate in the above embodiment.

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  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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Abstract

一种TFT阵列基板及其制作方法和显示装置，防止了电极狭缝（11）边角产生的液晶反向旋转畴和向错线。TFT阵列基板包括彼此绝缘的上层电极（1）和下层电极（2），其中，上层电极（1）具有狭缝（11），狭缝（11）包括至少一对小于或等于90度的角（α）；下层电极（2）为一整面电极，下层电极（2）具有缺损区域（21），缺损区域（21）对应上层电极（1）狭缝（11）的小于或等于90度的角（α）。

Description

TFT阵列基板及其制作方法和显示装置 技术领域
本发明的实施例涉及一种 TFT阵列基板及其制作方法和显示装置。 背景技术
薄膜场效应晶体管液晶显示器 （Thin Film Transistor Liquid Crystal Display, 简称 TFT-LCD )具有体积小、 功耗低、 无辐射等特点， 在当前的平 板显示器市场占据了主导地位。
ADSDS ( ADvanced Super Dimension Switch ) , 简称 ADS,即高级超维场 转换技术， 通过同一平面内狭缝电极边缘所产生的电场以及狭缝电极层与板 状电极层间产生的电场形成多维电场， 使液晶盒内狭缝电极间、 电极正上方 所有取向液晶分子都能够产生旋转， 从而提高了液晶工作效率并增大了透光 效率。 高级超维场开关技术可以提高 TFT-LCD产品的画面品质， 具有高分 辨率、 高透过率、 低功耗、 宽视角、 高开口率、低色差、 无挤压水波紋（push Mura )等优点。
如图 1所示， 一般的 ADS模式的 TFT阵列基板上， 具有彼此绝缘的上 下两层电极， 上层电极 1具有狭缝， 即狭缝电极， 下层电极 2为一整面， 即 为板状电极， 上下电极之间产生多维电场， 使液晶旋转。 但在上层电极 1的 狭缝的小于或等于 90度的边角区域 A, 由于电场的作用，该区域的一部分液 晶分子将发生反向旋转， 即反向旋转畴。 在此区域液晶的透光率比正向旋转 区域要差， 因而在反向旋转区域和正向旋转区域的边界产生向错线， 因此在 此区域透光率非常低， 基本为黑色。 为了消除上述不良影响， 对 TFT基板的 上层电极 1的狭缝形状做出了改进， 将原有的狭缝两端进行了尖角处理， 处 理后的狭缝形状为蟹腿形， 如图 2所示。但是改进后的 TFT基板对于防止电 极狭缝边角产生的液晶反向旋转畴和向错线的效果并不明显， 无法明显提高 该区域的透光率。 发明内容
本发明的实施例提供的 TFT阵列基板及其制作方法和显示装置，防止了 电极狭缝边角产生的液晶反向旋转畴和向错线， 提高了该区域的透光率。
本发明的实施例提供一种 TFT 阵列基板， 包括彼此绝缘的上下两层电 极， 其中， 上层电极具有狭缝， 该狭缝包括至少一对小于或等于 90度的角； 下层电极为一整面电极。
所述下层电极具有缺损区域， 所述缺损区域对应所述上层电极狭缝的所 述小于或等于 90度的角。
本发明的另一实施例， 提供一种显示装置， 包括上述的 TFT阵列基板。 本发明的再一实施例， 提供一种 TFT阵列基板的制造方法， 包括： 在基板上形成栅线、 栅极和下层电极， 其中， 在所述基板上通过构图工 艺处理形成下层电极的同时， 在所述下层电极上形成缺损区域；
在所述栅线、 栅极、 下层电极及基板上形成栅绝缘层；
在所述栅绝缘层上形成半导体有源层；
在所述基板上形成数据线、 源极、 漏极；
在所述数据线、 源极、 漏极、 下层电极上形成钝化层；
在所述钝化层上形成具有狭缝的上层电极； 其中， 所述狭缝包括至少一 缝的所述小于或等于 90度的角；
在所述上层电极上形成保护层。
本发明的任意实施例提供的 TFT阵列基板及其制作方法和显示装置， 包 括上下两层电极， 其中， 上层电极具有狭缝， 该狭缝包括至少一对小于或等 于 90度的角； 下层电极为一整面电极， 下层电极具有缺损区域， 该缺损区域 对应上层电极狭缝的小于或等于 90度的角。这样，在上层电极的狭缝的小于 或等于 90度的角的区域处， 由于其下方没有对应的下层电极， 因而削弱了此 区域的电场强度， 因此该区域的部分液晶分子发生反向旋转畴的情况较少， 进而不会产生较明显的向错线， 提高了该区域的透光率。 附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案， 下面将对实 施例或现有技术描述中所需要使用的附图作简单地介绍， 显而易见地， 下面 描述中的附图仅仅是本发明的一些实施例， 对于本领域普通技术人员来讲， 在不付出创造性劳动的前提下， 还可以根据这些附图获得其他的附图。
图 1为现有技术中 ADS模式的 TFT阵列基板的电极结构示意图一； 图 2为现有技术中 ADS模式的 TFT阵列基板的电极结构示意图二； 图 3为本发明实施例提供的 ADS模式的 TFT阵列基板的电极结构示意 图；
图 4为本发明另一实施例提供的 ADS模式的 TFT阵列基板的电极结构 示意图；
图 5为本发明实施例提供的 ADS模式的 TFT阵列基板的剖面示意图。 具体实施方式
下面将结合本发明实施例中的附图， 对本发明实施例中的技术方案进行 清楚、 完整地描述， 显然， 所描述的实施例仅仅是本发明一部分实施例， 而 不是全部的实施例。 基于本发明中的实施例， 本领域普通技术人员在没有做 出创造性劳动前提下所获得的所有其他实施例， 都属于本发明保护的范围。
本发明实施例提供的 ADS模式的 TFT阵列基板， 如图 3所示， 包括： 具有狭缝 11的上层电极 1和整面的下层电极 2,而且上层电极 1和下层电极 2之间至少形成有绝缘层。 其中， 上层电极 1的狭缝 11为平行四边形， 且包 括至少一对小于或等于 90度的角 Ζ α , 在本实施例中 Ζ α的顶端可以被修 圓。 下层电极 2具有缺损区域 21 , 缺损区域 21对应上层电极 1的狭缝 11的 角 Ζ α。
参考图 3 , 图 3中下方的圓示意性地放大示出了上层电极 1的狭缝的一 个小于或等于 90度的角 Ζ α ,以一个缺损区域为例，下层电极 2的缺损区域 21可以为三角形，其中，三角形的边 211远离 Ζ α的边 111 ,三角形的边 212 远离 Ζ α的边 112,三角形的另一条边 213交叠于角 Ζ α的边 111和 112,这 样， 下层电极 2的缺损区域 21对应上层电极 1的狭缝 11的小于或等于 90 度的角 Ζ α。从而， 在上层电极的狭缝的小于或等于 90度的角的区域处， 由 于其下方没有对应的下层电极， 因此该区域的部分液晶分子发生反向旋转畴 的情况较少， 进而不会产生较明显的向错线， 提高了该区域的透光率。 在本实施例提供的 ADS模式的 TFT阵列基板上， 当釆用正性液晶时， 液晶分子可以如图 3实线箭头 4所示，初始在水平方向（图 3中的左右方向） 上排列 （即， 初始配向方向） ； 当釆用负性液晶时， 液晶分子可以如图 3虚 线箭头 5所示， 在竖直方向 （图 3中的上下方向）上排列 （即， 初始配向方 向） 。
本发明另一实施例提供的 ADS模式的 TFT阵列基板， 如图 4所示， 包 括： 具有狭缝 12的上层电极 1和整面的下层电极 3 , 而且上层电极 1和下层 电极 3之间至少形成有绝缘层。 其中， 上层电极 1的狭缝 12为蟹腿形，且包 括至少一对小于或等于 90度的角 Δ β , 在本实施例中 Ζ β的顶端可以被修 圓。 下层电极 3具有缺损区域 31,缺损区域 31对应上层电极 1的狭缝 12的 小于或等于 90度的角 Ζ β 。
参考图 4, 图 4中下方的圓示意性地放大示出了上层电极 1的狭缝的一 个小于或等于 90度的角 Ζ β , 以一个缺损区域为例，下层电极 3的缺损区域 31为三角形， 其中， 三角形的边 311远离 Ζ β的边 121 , 三角形的边 312远 离 Ζ β的边 122,三角形的另一条边 313交叠于角 Δ β的边 121和 122,这样，
Ζ β 。
这样，在上层电极的狭缝的小于或等于 90度的角的区域处， 由于其下方 没有对应的下层电极， 因此该区域的部分液晶分子发生反向旋转畴的情况较 少， 进而不会产生较明显的向错线， 提高了该区域的透光率。
同样， 在本实施例提供的 ADS模式的 TFT阵列基板上， 当釆用正性液 晶时， 液晶分子可以如图 4实线箭头 4所示， 在水平方向 （图 4中的左右方 向）上排列； 当釆用负性液晶时， 液晶分子可以如图 4虚线箭头 5所示， 在 竖直方向 （图 4中的上下方向）上排列。
如图 5所示， 为上述阵列基板的剖面图， 包括： 基底基板 10; 具有狭缝
12的上层电极 1、 具有缺损区域 31的整面的下层电极 3、 栅极 9、 栅绝缘层 4、 有源层 5、 漏极 6、 源极 7以及钝化层 8。
在备选实施例中， 上层电极 1的狭缝可以具有其他形状， 下层电极的缺 损区域也可以具有其他形状， 只要下层电极的缺损区域对应于上层电极的狭 本发明的任意实施例提供的 ADS模式的 TFT阵列基板， 包括彼此绝缘 的上下两层电极， 其中， 上层电极具有狭缝， 该狭缝包括至少一对小于或等 于 90度的角； 下层电极为一整面电极， 下层电极具有缺损区域， 该缺损区域 对应上层电极狭缝的小于或等于 90度的角。这样，在上层电极的狭缝的小于 或等于 90度的角的区域处， 由于其下方没有对应的下层电极， 因而削弱了此 区域的电场强度， 因此该区域的部分液晶分子发生反向旋转畴的情况较少， 进而不会产生较明显的向错线， 提高了该区域的透光率。
本发明的再一实施例提供的 ADS模式的 TFT阵列基板的制造方法， 包 括：
S601、 在基底基板上形成栅线、 栅极和下层电极， 其中， 在基底基板上 通过构图工艺处理形成下层电极的同时， 在下层电极中形成缺损区域。
5602、 在栅线、 栅极、 下层电极及基底基板上形成栅绝缘层。
5603、 在栅绝缘层上形成半导体有源层。
5604、 在基底基板上形成数据线、 源极、 漏极。
S605、 在数据线、 源极、 漏极上形成钝化层。
5606、 在钝化层上形成具有狭缝的上层电极； 其中， 狭缝包括至少一对 小于或等于 90度的角， 在本实施例中这些小于或等于 90度的角的顶端可以 被修圓， 下层电极的缺损区域对应上层电极狭缝的小于或等于 90度的角。
5607、 在上层电极上形成保护层。
示例性的， 上层电极的狭缝可以为平行四边形或蟹腿形等。 下层电极的 缺损区域可以为三角形等， 其中， 三角形的两条边分别对应远离上层电极狭 缝的小于或等于 90度的角的两边,三角形的另一条边交叠于上层电极狭缝的 小于或等于 90度的角的两边，以使下层电极的缺损区域对应上层电极狭缝的 小于或等于 90度的角。 这样， 上层电极的狭缝的小于或等于 90度的角与下 层电极在竖直方向上不存在对应交叠， 因而削弱了此区域的电场强度， 因此 该区域的部分液晶分子发生反向旋转畴的情况较少， 进而不会产生较明显的 向错线， 提高了该区域的透光率。
本发明的实施例提供的 ADS模式的 TFT阵列基板的制作方法， 在基板 的上层电极形成狭缝，该狭缝包括至少一对小于或等于 90度的角； 下层电极 为一整面电极， 在下层电极上形成缺损区域， 该缺损区域对应上层电极狭缝 的小于或等于 90度的角。 这样， 在上层电极的狭缝的小于或等于 90度的角 的区域处， 由于其下方没有对应的下层电极， 因而削弱了此区域的电场强度， 因此该区域的部分液晶分子发生反向旋转畴的情况较少， 进而不会产生较明 显的向错线， 提高了该区域的透光率。
本发明的再一实施例还提供一种显示装置， 包括上述任一实施例提供的
TFT阵列基板， 其阵列基板的结构与上述实施例相同， 不再赘述。
该显示装置的一个示例为液晶显示装置， 例如液晶面板、 液晶电视、 手 机、液晶显示器等， 其中， TFT阵列基板与对置基板彼此对置以形成液晶盒， 在液晶盒中填充有液晶材料。 该对置基板例如为彩膜基板。 TFT阵列基板的 每个像素单元的像素电极用于施加电场对液晶材料的旋转的程度进行控制从 而进行显示操作。 在一些示例例中， 该液晶显示器还包括为阵列基板提供背 光的背光源。
该显示装置的另一个示例为有机电致发光显示装置， 其中， TFT阵列基 进行显示操作。
除了液晶显示装置和有机电致发光显示装置， 上述显示装置还可以是其 他类型的显示装置， 比如电子阅读器等， 其不包括彩膜基板， 但是包括上述 实施例中的阵列基板。
以上所述， 仅为本发明的具体实施方式， 但本发明的保护范围并不局限 于此， 任何熟悉本技术领域的技术人员在本发明揭露的技术范围内， 可轻易 想到变化或替换， 都应涵盖在本发明的保护范围之内。 因此， 本发明的保护 范围应以所述权利要求的保护范围为准。

Claims

权利要求书
1、 一种 TFT阵列基板， 包括彼此绝缘的上下两层电极， 其中， 上层电 极具有狭缝，该狭缝包括至少一对小于或等于 90度的角； 下层电极为一整面 电极， 其中，
所述下层电极具有缺损区域， 所述缺损区域对应所述上层电极狭缝的所 述小于或等于 90度的角。
2、 根据权利要求 1所述的 TFT阵列基板， 其中所述上层电极的狭缝为 平行四边形或蟹腿形。
3、 根据权利要求 1所述的 TFT阵列基板， 其中
所述下层电极的缺损区域为三角形， 其中， 所述三角形的两边分别对应 远离所述上层电极狭缝的小于或等于 90度的角的两边，所述三角形的另一条 边交叠于所述上层电极狭缝的小于或等于 90度的角的所述两边，以使所述下 层电极的缺损区域对应所述上层电极狭缝的所述小于或等于 90度的角。
4、根据权利要求 1所述的 TFT阵列基板， 其中所述小于或等于 90度的 角的顶端被爹圓。
5、 一种显示装置， 包括：
TFT阵列基板， 包括彼此绝缘的上下两层电极， 其中， 上层电极具有狭 缝， 该狭缝包括至少一对小于或等于 90度的角； 下层电极为一整面电极， 其 中，
所述下层电极具有缺损区域， 所述缺损区域对应所述上层电极狭缝的所 述小于或等于 90度的角。
6、根据权利要求 5所述的显示装置，其中所述上层电极的狭缝为平行四 边形或蟹腿形。 。
7、根据权利要求 5所述的显示装置，其中所述下层电极的缺损区域为三 角形， 其中， 所述三角形的两边分别对应远离所述上层电极狭缝的小于或等 于 90度的角的两边，所述三角形的另一条边交叠于所述上层电极狭缝的小于 或等于 90度的角的所述两边，以使所述下层电极的缺损区域对应所述上层电 极狭缝的所述小于或等于 90度的角。
8、 根据权利要求 5所述的显示装置， 其中所述小于或等于 90度的角的 顶端被爹圓。
9、 根据权利要求 5所述的显示装置， 还包括：
对置基板， 与所述阵列基板相对置以形成液晶盒； 以及
液晶材料， 填充在所述液晶盒中。
10、 一种 TFT阵列基板的制造方法， 包括：
在基底基板上形成栅线、 栅极和下层电极， 其中， 在所述基底基板上通 过构图工艺处理形成下层电极的同时， 在所述下层电极上形成缺损区域； 在所述栅线、 栅极、 下层电极及基底基板上形成栅绝缘层；
在所述栅绝缘层上形成半导体有源层；
在所述基底基板上形成数据线、 源极、 漏极；
在所述数据线、 源极、 漏极、 下层电极上形成钝化层；
在所述钝化层上形成具有狭缝的上层电极； 其中， 所述狭缝包括至少一 缝的所述小于或等于 90度的角；
在所述上层电极上形成保护层。
11、根据权利要求 10所述的方法，其中所述上层电极的狭缝为平行四边 形或蟹腿形。
12、根据权利要求 11所述的方法，其中所述下层电极的缺损区域为三角 形， 其中， 所述三角形的两边分别对应远离所述上层电极狭缝的小于或等于 90度的角的两边，所述三角形的另一条边交叠于所述上层电极狭缝的小于或 小于或等于 90度的角。
13、根据权利要求 1所述的 TFT阵列基板的制造方法， 其中所述小于或 等于 90度的角的顶端被修圓。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014108297B4 (de) * 2013-12-23 2021-04-29 Tianma Microelectronics Co., Ltd. TFT-Arraysubstrat, Anzeigefeld und Anzeigevorrichtung

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102629038B (zh) 2011-12-15 2014-12-24 京东方科技集团股份有限公司 Tft阵列基板及其制作方法和显示装置
CN103838041B (zh) * 2012-11-23 2016-12-21 上海天马微电子有限公司 边缘场开关模式液晶显示装置像素单元和阵列基板
CN103364987B (zh) * 2013-07-19 2015-11-25 深圳市华星光电技术有限公司 一种阵列基板及显示面板
JP6279248B2 (ja) * 2013-08-20 2018-02-14 株式会社ジャパンディスプレイ 液晶表示装置
CN103913908A (zh) * 2013-12-25 2014-07-09 厦门天马微电子有限公司 电极结构、显示面板和显示装置
CN103915452B (zh) 2014-03-28 2016-04-06 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示装置
CN104503163B (zh) 2014-12-24 2018-05-11 上海中航光电子有限公司 一种像素结构、显示面板和显示装置
CN104698696A (zh) 2015-03-26 2015-06-10 京东方科技集团股份有限公司 一种阵列基板、液晶面板及显示装置
CN105700254B (zh) * 2016-03-07 2020-03-27 京东方科技集团股份有限公司 电极、阵列基板及显示面板
JP6409920B2 (ja) * 2016-10-28 2018-10-24 Jnc株式会社 液晶表示素子、表示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100658073B1 (ko) * 2001-05-07 2006-12-15 비오이 하이디스 테크놀로지 주식회사 액정표시장치
CN101162315A (zh) * 2006-10-13 2008-04-16 爱普生映像元器件有限公司 液晶显示装置
CN101441369A (zh) * 2007-11-21 2009-05-27 爱普生映像元器件有限公司 液晶显示装置
KR20110066491A (ko) * 2009-12-11 2011-06-17 엘지디스플레이 주식회사 박막 트랜지스터 액정표시장치
CN102629038A (zh) * 2011-12-15 2012-08-08 京东方科技集团股份有限公司 Tft阵列基板及其制作方法和显示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100580536C (zh) 2007-07-06 2010-01-13 昆山龙腾光电有限公司 液晶显示装置的阵列基板及其制造方法
US8212954B2 (en) 2007-11-21 2012-07-03 Sony Corporation Liquid crystal display device
JP5143583B2 (ja) * 2008-02-08 2013-02-13 株式会社ジャパンディスプレイウェスト 液晶表示パネル
KR101066029B1 (ko) * 2008-06-25 2011-09-20 엘지디스플레이 주식회사 액정표시장치용 어레이 기판
JP2010156960A (ja) * 2008-12-03 2010-07-15 Semiconductor Energy Lab Co Ltd 液晶表示装置
US8953134B2 (en) * 2011-01-20 2015-02-10 Japan Display West Inc. Liquid crystal display panel
US8189158B1 (en) * 2011-09-29 2012-05-29 Hannstar Display Corp. Fringe field switching liquid crystal display apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100658073B1 (ko) * 2001-05-07 2006-12-15 비오이 하이디스 테크놀로지 주식회사 액정표시장치
CN101162315A (zh) * 2006-10-13 2008-04-16 爱普生映像元器件有限公司 液晶显示装置
CN101441369A (zh) * 2007-11-21 2009-05-27 爱普生映像元器件有限公司 液晶显示装置
KR20110066491A (ko) * 2009-12-11 2011-06-17 엘지디스플레이 주식회사 박막 트랜지스터 액정표시장치
CN102629038A (zh) * 2011-12-15 2012-08-08 京东方科技集团股份有限公司 Tft阵列基板及其制作方法和显示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014108297B4 (de) * 2013-12-23 2021-04-29 Tianma Microelectronics Co., Ltd. TFT-Arraysubstrat, Anzeigefeld und Anzeigevorrichtung

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