JP2009139394A - 半透過型液晶表示装置、及びその製造方法 - Google Patents
半透過型液晶表示装置、及びその製造方法 Download PDFInfo
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133371—Cells with varying thickness of the liquid crystal layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
- G02F1/133555—Transflectors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Abstract
【解決手段】本発明に係る半透過型液晶表示装置の製造方法は、TFT50を覆うパッシベーション膜17上に膜厚差を有する有機膜18を形成し、パッシベーション膜17をエッチングしてコンタクトホール13を形成する。膜厚差を有するレジストパターン35を用いて有機膜18上の反射電極10b及び透過電極10aをエッチングする。アッシングにより、レジストパターン35の薄膜部35bを除去するとともに、露出した有機膜18の薄膜部18bを除去して開口部18dを形成する。薄膜部が除去されたレジストパターン35cを用いて反射電極10bをエッチングする。この基板3と、基板21とを、枠状のシール材31が有機膜18の開口部18d内に配置されるように貼り合わせる。
【選択図】 図5
Description
チャネル4の形成領域に複数階調露光を行う。
6 ゲート配線、7 ゲート電極、8 ソース電極、9 ドレイン電極、
10 画素電極、10a 透過電極、10b 反射電極、12 共通配線、
13 コンタクトホール、14 半導体層、15 ゲート絶縁膜、
16 オーミックコンタクト層、17 パッシベーション膜、
18 有機膜、18a 厚膜部、18b、18c 薄膜部、18d 開口部、
19 配向膜、21 基板、22 ブラックマトリクス、23 色材、
24 オーバーコート、25 対向電極、29 配向膜、30 液晶、
31 シール材、32 シール部周辺領域、35 レジストパターン、
35a 厚膜部、35b 薄膜部、35c レジストパターン、
41 表示領域、42 額縁領域、43 ソース配線端子、44 ゲート配線端子、
45、46 制御回路、47、48 フレキシブル基板、49 画素、
50 TFT、100 液晶表示パネル
Claims (5)
- 第1の基板上に薄膜トランジスタを形成する工程と、
前記薄膜トランジスタを覆う無機絶縁膜を形成する工程と、
前記無機絶縁膜上に、膜厚差を有する有機膜を形成する工程と、
前記有機膜から露出した前記無機絶縁膜をエッチングして、コンタクトホールを形成する工程と、
前記有機膜の上に、透過電極と反射電極とを順次成膜する工程と、
前記反射電極の上に、膜厚差を有するレジストパターンを形成し、前記反射電極及び前記透過電極をエッチングする工程と、
アッシングにより、前記レジストパターンの薄膜部を除去するとともに、前記透過電極から露出した前記有機膜の薄膜部を除去して開口部を形成する工程と、
前記薄膜部が除去されたレジストパターンを用いて、前記反射電極をエッチングして、前記コンタクトホールを介して前記薄膜トランジスタと接続する画素電極を形成する工程と、
前記第1の基板と、前記第1の基板と対向配置された第2の基板とを、表示領域を囲む枠状のシール材が前記有機膜の前記開口部内に配置されるように貼り合わせる工程と、を備える半透過型液晶表示装置の製造方法。 - 前記第1の基板側では、前記開口部内の前記無機絶縁膜に前記シール材を接着する請求項1に記載の半透過型液晶表示装置の製造方法。
- 前記膜厚差を有する有機膜の形成工程、及び前記膜厚差を有するレジストパターンの形成工程では、複数階調露光を用いる請求項1又は2に記載の半透過型液晶表示装置の製造方法。
- 薄膜トランジスタが形成された第1の基板と、
前記第1の基板と対向配置された第2の基板と、
表示領域を囲むよう枠状に形成され、前記第1の基板と前記第2の基板とを貼り合わせるシール材と、
前記第1の基板上において、前記薄膜トランジスタを覆う無機絶縁膜と、
前記無機絶縁膜の上に形成された有機膜と、
前記有機膜上に設けられた透過電極と、前記透過電極上の一部に設けられた反射電極とを含み、前記有機膜及び前記無機絶縁膜を貫通するコンタクトホールを介して前記薄膜トランジスタに接続する画素電極と、を備え、
前記有機膜は、前記反射電極の下に設けられた厚膜部と、前記透過電極の外側に形成された、前記厚膜部より膜厚の薄い薄膜部と、前記有機膜が除去された開口部とを有し、
前記開口部内に前記シール材が配置されている半透過型液晶表示装置。 - 前記薄膜トランジスタのゲート電極と同じ層によって形成されたゲート配線と、
前記薄膜トランジスタのソース電極と同じ層によって形成されたソース配線と、を更に備え、
前記ゲート配線及び前記ソース配線は、前記シール材の下において、少なくとも前記無機絶縁膜に覆われている請求項4に記載の半透過型液晶表示装置。
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JP2007312224A JP5259163B2 (ja) | 2007-12-03 | 2007-12-03 | 半透過型液晶表示装置、及びその製造方法 |
US12/277,798 US8040487B2 (en) | 2007-12-03 | 2008-11-25 | Transflective type liquid crystal display device and manufacturing method thereof |
US13/232,202 US8208107B2 (en) | 2007-12-03 | 2011-09-14 | Transflective type liquid crystal display device |
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Cited By (6)
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KR20120042474A (ko) * | 2010-10-25 | 2012-05-03 | 삼성모바일디스플레이주식회사 | 액정 표시 장치 |
JP2012093665A (ja) * | 2010-10-29 | 2012-05-17 | Hitachi Displays Ltd | 液晶表示装置 |
WO2012105189A1 (ja) * | 2011-02-01 | 2012-08-09 | シャープ株式会社 | 表示装置及びその製造方法 |
WO2013190815A1 (ja) * | 2012-06-22 | 2013-12-27 | シャープ株式会社 | アクティブマトリクス基板の製造方法及び表示装置の製造方法 |
JP2014059553A (ja) * | 2012-08-23 | 2014-04-03 | Semiconductor Energy Lab Co Ltd | 表示装置 |
CN106449694A (zh) * | 2015-08-04 | 2017-02-22 | 三星显示有限公司 | 柔性显示器及其制造方法 |
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DE102009035436B4 (de) * | 2009-07-31 | 2013-09-05 | Globalfoundries Dresden Module One Llc & Co. Kg | Verfahren zur Herstellung eines dreidimensionalen Halbleiterbauelements mit einer Zwischenchipverbindung auf der Grundlage funktionaler Moleküle |
JP2011187506A (ja) * | 2010-03-04 | 2011-09-22 | Sony Corp | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
KR101830301B1 (ko) * | 2011-10-24 | 2018-02-21 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
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CN111176011B (zh) * | 2020-02-19 | 2022-11-04 | 合肥鑫晟光电科技有限公司 | 阵列基板制作方法、阵列基板及液晶显示装置 |
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JP2012093665A (ja) * | 2010-10-29 | 2012-05-17 | Hitachi Displays Ltd | 液晶表示装置 |
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JP2014059553A (ja) * | 2012-08-23 | 2014-04-03 | Semiconductor Energy Lab Co Ltd | 表示装置 |
US10008630B2 (en) | 2012-08-23 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP2019070816A (ja) * | 2012-08-23 | 2019-05-09 | 株式会社半導体エネルギー研究所 | 表示装置 |
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CN106449694B (zh) * | 2015-08-04 | 2022-08-16 | 三星显示有限公司 | 柔性显示器及其制造方法 |
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US20090141223A1 (en) | 2009-06-04 |
JP5259163B2 (ja) | 2013-08-07 |
US8208107B2 (en) | 2012-06-26 |
US8040487B2 (en) | 2011-10-18 |
US20120001188A1 (en) | 2012-01-05 |
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