JP5259163B2 - 半透過型液晶表示装置、及びその製造方法 - Google Patents
半透過型液晶表示装置、及びその製造方法 Download PDFInfo
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- JP5259163B2 JP5259163B2 JP2007312224A JP2007312224A JP5259163B2 JP 5259163 B2 JP5259163 B2 JP 5259163B2 JP 2007312224 A JP2007312224 A JP 2007312224A JP 2007312224 A JP2007312224 A JP 2007312224A JP 5259163 B2 JP5259163 B2 JP 5259163B2
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133371—Cells with varying thickness of the liquid crystal layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
- G02F1/133555—Transflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Description
チャネル4の形成領域に複数階調露光を行う。
6 ゲート配線、7 ゲート電極、8 ソース電極、9 ドレイン電極、
10 画素電極、10a 透過電極、10b 反射電極、12 共通配線、
13 コンタクトホール、14 半導体層、15 ゲート絶縁膜、
16 オーミックコンタクト層、17 パッシベーション膜、
18 有機膜、18a 厚膜部、18b、18c 薄膜部、18d 開口部、
19 配向膜、21 基板、22 ブラックマトリクス、23 色材、
24 オーバーコート、25 対向電極、29 配向膜、30 液晶、
31 シール材、32 シール部周辺領域、35 レジストパターン、
35a 厚膜部、35b 薄膜部、35c レジストパターン、
41 表示領域、42 額縁領域、43 ソース配線端子、44 ゲート配線端子、
45、46 制御回路、47、48 フレキシブル基板、49 画素、
50 TFT、100 液晶表示パネル
Claims (3)
- 第1の基板上に薄膜トランジスタを形成する工程と、
前記薄膜トランジスタを覆う無機絶縁膜を形成する工程と、
前記無機絶縁膜上に、膜厚差を有する有機膜を形成する工程と、
前記有機膜から露出した前記無機絶縁膜をエッチングして、コンタクトホールを形成する工程と、
前記有機膜の上に、透過電極と反射電極とを順次成膜する工程と、
前記反射電極の上に、膜厚差を有するレジストパターンを形成し、前記反射電極及び前記透過電極をエッチングする工程と、
アッシングにより、前記レジストパターンの薄膜部を除去するとともに、前記透過電極から露出した前記有機膜の薄膜部を除去して開口部を形成する工程と、
前記薄膜部が除去されたレジストパターンを用いて、前記反射電極をエッチングして、前記コンタクトホールを介して前記薄膜トランジスタと接続する画素電極を形成する工程と、
前記第1の基板と、前記第1の基板と対向配置された第2の基板とを、表示領域を囲む枠状のシール材が前記有機膜の前記開口部内に配置されるように貼り合わせる工程と、を備える半透過型液晶表示装置の製造方法。 - 前記第1の基板側では、前記開口部内の前記無機絶縁膜に前記シール材を接着する請求項1に記載の半透過型液晶表示装置の製造方法。
- 前記膜厚差を有する有機膜の形成工程、及び前記膜厚差を有するレジストパターンの形成工程では、複数階調露光を用いる請求項1又は2に記載の半透過型液晶表示装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007312224A JP5259163B2 (ja) | 2007-12-03 | 2007-12-03 | 半透過型液晶表示装置、及びその製造方法 |
US12/277,798 US8040487B2 (en) | 2007-12-03 | 2008-11-25 | Transflective type liquid crystal display device and manufacturing method thereof |
US13/232,202 US8208107B2 (en) | 2007-12-03 | 2011-09-14 | Transflective type liquid crystal display device |
Applications Claiming Priority (1)
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JP2007312224A JP5259163B2 (ja) | 2007-12-03 | 2007-12-03 | 半透過型液晶表示装置、及びその製造方法 |
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JP2009139394A JP2009139394A (ja) | 2009-06-25 |
JP5259163B2 true JP5259163B2 (ja) | 2013-08-07 |
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US (2) | US8040487B2 (ja) |
JP (1) | JP5259163B2 (ja) |
Families Citing this family (18)
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DE102009035436B4 (de) * | 2009-07-31 | 2013-09-05 | Globalfoundries Dresden Module One Llc & Co. Kg | Verfahren zur Herstellung eines dreidimensionalen Halbleiterbauelements mit einer Zwischenchipverbindung auf der Grundlage funktionaler Moleküle |
JP2011187506A (ja) * | 2010-03-04 | 2011-09-22 | Sony Corp | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
KR101719800B1 (ko) * | 2010-10-25 | 2017-03-27 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
JP5437971B2 (ja) * | 2010-10-29 | 2014-03-12 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
CN103314403B (zh) * | 2011-02-01 | 2014-10-29 | 夏普株式会社 | 显示装置及其制造方法 |
KR101830301B1 (ko) * | 2011-10-24 | 2018-02-21 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
CN104303221B (zh) * | 2012-06-22 | 2016-09-07 | 夏普株式会社 | 有源矩阵基板的制造方法和显示装置的制造方法 |
KR20140026257A (ko) * | 2012-08-23 | 2014-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
CN104112758B (zh) * | 2014-07-01 | 2017-02-22 | 京东方科技集团股份有限公司 | 发光二极管显示面板及其制作方法、显示装置 |
KR102418432B1 (ko) * | 2015-01-23 | 2022-07-08 | 삼성디스플레이 주식회사 | 액정표시패널 및 이의 제조방법 |
CN104932166B (zh) * | 2015-04-23 | 2018-04-17 | 合肥鑫晟光电科技有限公司 | 一种阵列基板及其制作方法、显示面板、显示装置 |
CN104952884B (zh) * | 2015-05-13 | 2019-11-26 | 深圳市华星光电技术有限公司 | Amoled背板结构及其制作方法 |
KR102381082B1 (ko) * | 2015-07-31 | 2022-03-30 | 엘지디스플레이 주식회사 | 액정 표시 장치 |
KR102396295B1 (ko) * | 2015-08-04 | 2022-05-11 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 및 그 제조방법 |
CN111048689B (zh) * | 2016-06-30 | 2022-10-28 | 乐金显示有限公司 | 有机发光显示装置 |
JP7158899B2 (ja) * | 2018-06-06 | 2022-10-24 | 株式会社ジャパンディスプレイ | 電気光学装置 |
CN110018595B (zh) * | 2019-04-25 | 2021-11-12 | 厦门天马微电子有限公司 | 一种显示面板及显示装置 |
CN111176011B (zh) * | 2020-02-19 | 2022-11-04 | 合肥鑫晟光电科技有限公司 | 阵列基板制作方法、阵列基板及液晶显示装置 |
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JP4054102B2 (ja) * | 1997-03-27 | 2008-02-27 | 東芝電子エンジニアリング株式会社 | 液晶表示装置及びその製造方法 |
US7358104B2 (en) * | 2002-10-08 | 2008-04-15 | Samsung Electornics Co., Ltd. | Contact portion of semiconductor device, and thin film transistor array panel for display device including the contact portion |
JP3939140B2 (ja) | 2001-12-03 | 2007-07-04 | 株式会社日立製作所 | 液晶表示装置 |
JP5011479B2 (ja) * | 2006-02-14 | 2012-08-29 | 株式会社ジャパンディスプレイイースト | 表示装置の製造方法 |
US20080049176A1 (en) * | 2006-08-25 | 2008-02-28 | Samsung Electronics Co., Ltd. | Thin film transistor-array substrate, transflective liquid crystal display device with the same, and method for manufacturing the same |
JP5536986B2 (ja) | 2008-04-30 | 2014-07-02 | 三菱電機株式会社 | 液晶表示装置 |
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2007
- 2007-12-03 JP JP2007312224A patent/JP5259163B2/ja active Active
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2008
- 2008-11-25 US US12/277,798 patent/US8040487B2/en active Active
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2011
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US8208107B2 (en) | 2012-06-26 |
US20090141223A1 (en) | 2009-06-04 |
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