JP2014011350A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 149
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 150000004767 nitrides Chemical class 0.000 claims abstract description 38
- 238000007772 electroless plating Methods 0.000 claims abstract description 24
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 337
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 74
- 239000010931 gold Substances 0.000 description 56
- 239000000758 substrate Substances 0.000 description 17
- 238000001771 vacuum deposition Methods 0.000 description 16
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 238000001994 activation Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
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- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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Abstract
【解決手段】本発明は、窒化物半導体層12上に、上面および側面を有し、ニッケルを含有する金属パターン(Ni層52)を形成する工程と、金属パターン(Ni層52)の前記上面および側面を含む露出面に対して無電解めっきによってバリア層(Pd層54)を形成し、金属パターン(Ni層52)の表面をバリア層(Pd層54)で被覆する工程と、を有する半導体装置の製造方法である。
【選択図】図5
Description
12 窒化物半導体層
14 チャネル層
16 電子供給層
18 第1絶縁膜
20 ソース電極
22 ドレイン電極
24 開口
26、50 ゲート電極
28、52 Ni層
30、54 Pd層
32、56 Au層
34 第2絶縁膜
36 ソース配線
38 ドレイン配線
40、80 フィールドプレート
42 第1開口
44 第1レジスト層
46 第2開口
48 第2レジスト層
82 ソースウォール
Claims (7)
- 窒化物半導体層上に、上面および側面を有し、ニッケルを含有する金属パターンを形成する工程と、
前記金属パターンの前記上面および側面を含む露出面に対して無電解めっきによってバリア層を形成し、前記金属パターンの表面を前記バリア層で被覆する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記窒化物半導体層上に、開口を有する第1絶縁膜が設けられ、前記金属パターンは、前記第1絶縁膜および前記開口に接して形成され、前記バリア層と前記窒化物半導体層との間は、前記第1絶縁膜によって隔離されてなることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記バリア層上に、無電解めっきによって導電層を形成する工程をさらに有することを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記バリア層の形成は、前記金属パターンよりも大きい幅を有する開口が前記金属パターンに対応して形成されたマスクを設ける工程と、前記無電解めっきによって、前記マスクの開口内に前記バリア層を構成する材料を充填して成長させる工程と、によりなされることを特徴とする請求項1から3のいずれか一項記載の半導体装置の製造方法。
- 前記導電層が、前記マスクの開口内を充填して形成されることを特徴とする請求項4記載の半導体装置の製造方法。
- 前記バリア層上に第2絶縁膜を形成する工程をさらに有することを特徴とする請求項1から5のいずれか一項記載の半導体装置の製造方法。
- 前記第2絶縁膜上にフィールドプレートあるいはソースウォールを構成する金属層を形成する工程をさらに有することを特徴とする請求項6記載の半導体装置の製造方法。
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JP2012147538A JP5983999B2 (ja) | 2012-06-29 | 2012-06-29 | 半導体装置の製造方法 |
US13/930,904 US9412829B2 (en) | 2012-06-29 | 2013-06-28 | Method for fabricating semiconductor device and semiconductor device |
US15/204,199 US9653592B2 (en) | 2012-06-29 | 2016-07-07 | Method for fabricating semiconductor device and semiconductor device |
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JP2015204331A (ja) * | 2014-04-11 | 2015-11-16 | 豊田合成株式会社 | 半導体装置、半導体装置の製造方法 |
JP2015204335A (ja) * | 2014-04-11 | 2015-11-16 | 豊田合成株式会社 | 半導体装置および半導体装置の製造方法 |
JP2017107942A (ja) * | 2015-12-08 | 2017-06-15 | 株式会社東芝 | 半導体装置 |
JP2017529706A (ja) * | 2014-09-01 | 2017-10-05 | 蘇州捷芯威半導体有限公司Gpower Semiconductor,Inc. | 斜めフィールドプレートパワーデバイス及び斜めフィールドプレートパワーデバイスの製造方法 |
JP6344531B1 (ja) * | 2017-06-07 | 2018-06-20 | 三菱電機株式会社 | 半導体装置の製造方法 |
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US9178016B2 (en) * | 2013-03-01 | 2015-11-03 | Infineon Technologies Austria Ag | Charge protection for III-nitride devices |
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JP6292104B2 (ja) * | 2014-11-17 | 2018-03-14 | 三菱電機株式会社 | 窒化物半導体装置の製造方法 |
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US20140001640A1 (en) | 2014-01-02 |
US9653592B2 (en) | 2017-05-16 |
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