|
US3775693A
(en)
|
1971-11-29 |
1973-11-27 |
Moskek Co |
Mosfet logic inverter for integrated circuits
|
|
JPS58205226A
(ja)
|
1982-05-25 |
1983-11-30 |
Fujitsu Ltd |
スタンバイ機能を内蔵したマイクロコンピユ−タ
|
|
JPS60198861A
(ja)
|
1984-03-23 |
1985-10-08 |
Fujitsu Ltd |
薄膜トランジスタ
|
|
JPH0244256B2
(ja)
|
1987-01-28 |
1990-10-03 |
Kagaku Gijutsucho Mukizaishitsu Kenkyushocho |
Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
|
|
JPH0244260B2
(ja)
|
1987-02-24 |
1990-10-03 |
Kagaku Gijutsucho Mukizaishitsu Kenkyushocho |
Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
|
|
JPH0244258B2
(ja)
|
1987-02-24 |
1990-10-03 |
Kagaku Gijutsucho Mukizaishitsu Kenkyushocho |
Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
|
|
JPS63210023A
(ja)
|
1987-02-24 |
1988-08-31 |
Natl Inst For Res In Inorg Mater |
ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
|
|
JPH0244262B2
(ja)
|
1987-02-27 |
1990-10-03 |
Kagaku Gijutsucho Mukizaishitsu Kenkyushocho |
Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
|
|
JPH0244263B2
(ja)
|
1987-04-22 |
1990-10-03 |
Kagaku Gijutsucho Mukizaishitsu Kenkyushocho |
Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
|
|
US4800303A
(en)
|
1987-05-19 |
1989-01-24 |
Gazelle Microcircuits, Inc. |
TTL compatible output buffer
|
|
US5218607A
(en)
|
1989-06-23 |
1993-06-08 |
Kabushiki Kaisha Toshiba |
Computer having a resume function and operable on an internal power source
|
|
JPH0327419A
(ja)
|
1989-06-23 |
1991-02-05 |
Toshiba Corp |
パーソナルコンピュータ
|
|
US5039883A
(en)
|
1990-02-21 |
1991-08-13 |
Nec Electronics Inc. |
Dual input universal logic structure
|
|
US5210845A
(en)
*
|
1990-11-28 |
1993-05-11 |
Intel Corporation |
Controller for two-way set associative cache
|
|
JPH05251705A
(ja)
|
1992-03-04 |
1993-09-28 |
Fuji Xerox Co Ltd |
薄膜トランジスタ
|
|
JP3298974B2
(ja)
|
1993-03-23 |
2002-07-08 |
電子科学株式会社 |
昇温脱離ガス分析装置
|
|
US5835934A
(en)
*
|
1993-10-12 |
1998-11-10 |
Texas Instruments Incorporated |
Method and apparatus of low power cache operation with a tag hit enablement
|
|
US6242289B1
(en)
|
1995-09-08 |
2001-06-05 |
Semiconductor Energy Laboratories Co., Ltd. |
Method for producing semiconductor device
|
|
JPH08241240A
(ja)
|
1995-03-03 |
1996-09-17 |
Toshiba Corp |
コンピュータシステム
|
|
JPH08263370A
(ja)
|
1995-03-27 |
1996-10-11 |
Toshiba Microelectron Corp |
キャッシュメモリシステム
|
|
JP3479375B2
(ja)
|
1995-03-27 |
2003-12-15 |
科学技術振興事業団 |
亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
|
|
JPH0926913A
(ja)
*
|
1995-07-13 |
1997-01-28 |
Toshiba Microelectron Corp |
キャッシュメモリ
|
|
WO1997006554A2
(en)
|
1995-08-03 |
1997-02-20 |
Philips Electronics N.V. |
Semiconductor device provided with transparent switching element
|
|
JPH0950401A
(ja)
|
1995-08-09 |
1997-02-18 |
Toshiba Corp |
キャッシュメモリ及びそれを備えた情報処理装置
|
|
US6078194A
(en)
|
1995-11-13 |
2000-06-20 |
Vitesse Semiconductor Corporation |
Logic gates for reducing power consumption of gallium arsenide integrated circuits
|
|
JP3625598B2
(ja)
|
1995-12-30 |
2005-03-02 |
三星電子株式会社 |
液晶表示装置の製造方法
|
|
JPH1078836A
(ja)
|
1996-09-05 |
1998-03-24 |
Hitachi Ltd |
データ処理装置
|
|
JP4103968B2
(ja)
|
1996-09-18 |
2008-06-18 |
株式会社半導体エネルギー研究所 |
絶縁ゲイト型半導体装置
|
|
US5870616A
(en)
|
1996-10-04 |
1999-02-09 |
International Business Machines Corporation |
System and method for reducing power consumption in an electronic circuit
|
|
US5980092A
(en)
|
1996-11-19 |
1999-11-09 |
Unisys Corporation |
Method and apparatus for optimizing a gated clock structure using a standard optimization tool
|
|
EP1049660A1
(en)
|
1997-10-10 |
2000-11-08 |
The Trustees Of The University Of Pennsylvania |
Compositions and methods for inhibiting arginase activity
|
|
US6049883A
(en)
|
1998-04-01 |
2000-04-11 |
Tjandrasuwita; Ignatius B. |
Data path clock skew management in a dynamic power management environment
|
|
JP4170454B2
(ja)
|
1998-07-24 |
2008-10-22 |
Ｈｏｙａ株式会社 |
透明導電性酸化物薄膜を有する物品及びその製造方法
|
|
JP2000150861A
(ja)
|
1998-11-16 |
2000-05-30 |
Tdk Corp |
酸化物薄膜
|
|
JP3276930B2
(ja)
|
1998-11-17 |
2002-04-22 |
科学技術振興事業団 |
トランジスタ及び半導体装置
|
|
US6204695B1
(en)
|
1999-06-18 |
2001-03-20 |
Xilinx, Inc. |
Clock-gating circuit for reducing power consumption
|
|
TW460731B
(en)
|
1999-09-03 |
2001-10-21 |
Ind Tech Res Inst |
Electrode structure and production method of wide viewing angle LCD
|
|
US6281710B1
(en)
|
1999-12-17 |
2001-08-28 |
Hewlett-Packard Company |
Selective latch for a domino logic gate
|
|
JP4089858B2
(ja)
|
2000-09-01 |
2008-05-28 |
国立大学法人東北大学 |
半導体デバイス
|
|
JP3727838B2
(ja)
|
2000-09-27 |
2005-12-21 |
株式会社東芝 |
半導体集積回路
|
|
US6983388B2
(en)
*
|
2000-10-25 |
2006-01-03 |
Agere Systems Inc. |
Method and apparatus for reducing leakage power in a cache memory by using a timer control signal that removes power to associated cache lines
|
|
US20030145241A1
(en)
*
|
2002-01-30 |
2003-07-31 |
Zhigang Hu |
Method and apparatus for reducing leakage power in a cache memory using adaptive time-based decay
|
|
US6684298B1
(en)
|
2000-11-09 |
2004-01-27 |
University Of Rochester |
Dynamic reconfigurable memory hierarchy
|
|
KR20020038482A
(ko)
|
2000-11-15 |
2002-05-23 |
모리시타 요이찌 |
박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
|
|
TW465188B
(en)
|
2001-01-02 |
2001-11-21 |
Faraday Tech Corp |
Clock gate buffer circuit
|
|
JP2002236616A
(ja)
*
|
2001-02-13 |
2002-08-23 |
Fujitsu Ltd |
キャッシュメモリシステム
|
|
JP3997731B2
(ja)
|
2001-03-19 |
2007-10-24 |
富士ゼロックス株式会社 |
基材上に結晶性半導体薄膜を形成する方法
|
|
JP2002289859A
(ja)
|
2001-03-23 |
2002-10-04 |
Minolta Co Ltd |
薄膜トランジスタ
|
|
DE10119051B4
(de)
|
2001-04-18 |
2006-12-28 |
Infineon Technologies Ag |
Schaltungsanordnung zur Freigabe eines Taktsignals in Abhängigkeit von einem Freigabesignal
|
|
US6822478B2
(en)
|
2001-07-03 |
2004-11-23 |
Texas Instruments Incorporated |
Data-driven clock gating for a sequential data-capture device
|
|
JP2003045189A
(ja)
*
|
2001-07-31 |
2003-02-14 |
Fujitsu Ltd |
半導体メモリ
|
|
JP3925839B2
(ja)
|
2001-09-10 |
2007-06-06 |
シャープ株式会社 |
半導体記憶装置およびその試験方法
|
|
JP4090716B2
(ja)
|
2001-09-10 |
2008-05-28 |
雅司 川崎 |
薄膜トランジスタおよびマトリクス表示装置
|
|
JP4974202B2
(ja)
|
2001-09-19 |
2012-07-11 |
ルネサスエレクトロニクス株式会社 |
半導体集積回路
|
|
US7061014B2
(en)
|
2001-11-05 |
2006-06-13 |
Japan Science And Technology Agency |
Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
|
|
JP4164562B2
(ja)
|
2002-09-11 |
2008-10-15 |
独立行政法人科学技術振興機構 |
ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
|
|
JP4083486B2
(ja)
|
2002-02-21 |
2008-04-30 |
独立行政法人科学技術振興機構 |
ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
|
|
US7533214B2
(en)
*
|
2002-02-27 |
2009-05-12 |
Microsoft Corporation |
Open architecture flash driver
|
|
US7049190B2
(en)
|
2002-03-15 |
2006-05-23 |
Sanyo Electric Co., Ltd. |
Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
|
|
JP3933591B2
(ja)
|
2002-03-26 |
2007-06-20 |
淳二 城戸 |
有機エレクトロルミネッセント素子
|
|
US7339187B2
(en)
|
2002-05-21 |
2008-03-04 |
State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University |
Transistor structures
|
|
JP2004022625A
(ja)
|
2002-06-13 |
2004-01-22 |
Murata Mfg Co Ltd |
半導体デバイス及び該半導体デバイスの製造方法
|
|
US7398442B2
(en)
|
2002-06-21 |
2008-07-08 |
Koninklijke Philips Electronics N.V. |
Electronic circuit with asynchronously operating components
|
|
US7105868B2
(en)
|
2002-06-24 |
2006-09-12 |
Cermet, Inc. |
High-electron mobility transistor with zinc oxide
|
|
TWI272641B
(en)
|
2002-07-16 |
2007-02-01 |
Semiconductor Energy Lab |
Method of manufacturing a semiconductor device
|
|
JP3910902B2
(ja)
|
2002-10-02 |
2007-04-25 |
松下電器産業株式会社 |
集積回路装置
|
|
US7067843B2
(en)
|
2002-10-11 |
2006-06-27 |
E. I. Du Pont De Nemours And Company |
Transparent oxide semiconductor thin film transistors
|
|
US6788567B2
(en)
|
2002-12-02 |
2004-09-07 |
Rohm Co., Ltd. |
Data holding device and data holding method
|
|
JP4166105B2
(ja)
|
2003-03-06 |
2008-10-15 |
シャープ株式会社 |
半導体装置およびその製造方法
|
|
JP2004273732A
(ja)
|
2003-03-07 |
2004-09-30 |
Sharp Corp |
アクティブマトリクス基板およびその製造方法
|
|
JP3806131B2
(ja)
|
2003-05-21 |
2006-08-09 |
富士通株式会社 |
アドレス変換バッファの電力制御方法及びその装置
|
|
JP4108633B2
(ja)
|
2003-06-20 |
2008-06-25 |
シャープ株式会社 |
薄膜トランジスタおよびその製造方法ならびに電子デバイス
|
|
US7069388B1
(en)
|
2003-07-10 |
2006-06-27 |
Analog Devices, Inc. |
Cache memory data replacement strategy
|
|
US7262463B2
(en)
|
2003-07-25 |
2007-08-28 |
Hewlett-Packard Development Company, L.P. |
Transistor including a deposited channel region having a doped portion
|
|
US7076748B2
(en)
|
2003-08-01 |
2006-07-11 |
Atrenta Inc. |
Identification and implementation of clock gating in the design of integrated circuits
|
|
US7502887B2
(en)
|
2003-11-12 |
2009-03-10 |
Panasonic Corporation |
N-way set associative cache memory and control method thereof
|
|
US7297977B2
(en)
|
2004-03-12 |
2007-11-20 |
Hewlett-Packard Development Company, L.P. |
Semiconductor device
|
|
KR101019337B1
(ko)
|
2004-03-12 |
2011-03-07 |
도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 |
아몰퍼스 산화물 및 박막 트랜지스터
|
|
US7282782B2
(en)
|
2004-03-12 |
2007-10-16 |
Hewlett-Packard Development Company, L.P. |
Combined binary oxide semiconductor device
|
|
US7145174B2
(en)
|
2004-03-12 |
2006-12-05 |
Hewlett-Packard Development Company, Lp. |
Semiconductor device
|
|
JP3834323B2
(ja)
*
|
2004-04-30 |
2006-10-18 |
日本電気株式会社 |
キャッシュメモリおよびキャッシュ制御方法
|
|
US7211825B2
(en)
|
2004-06-14 |
2007-05-01 |
Yi-Chi Shih |
Indium oxide-based thin film transistors and circuits
|
|
JP2006100760A
(ja)
|
2004-09-02 |
2006-04-13 |
Casio Comput Co Ltd |
薄膜トランジスタおよびその製造方法
|
|
US7285501B2
(en)
|
2004-09-17 |
2007-10-23 |
Hewlett-Packard Development Company, L.P. |
Method of forming a solution processed device
|
|
US7257678B2
(en)
|
2004-10-01 |
2007-08-14 |
Advanced Micro Devices, Inc. |
Dynamic reconfiguration of cache memory
|
|
US7298084B2
(en)
|
2004-11-02 |
2007-11-20 |
3M Innovative Properties Company |
Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
|
|
CN101057338B
(zh)
|
2004-11-10 |
2011-03-16 |
佳能株式会社 |
采用无定形氧化物的场效应晶体管
|
|
US7829444B2
(en)
|
2004-11-10 |
2010-11-09 |
Canon Kabushiki Kaisha |
Field effect transistor manufacturing method
|
|
CN101057333B
(zh)
|
2004-11-10 |
2011-11-16 |
佳能株式会社 |
发光器件
|
|
US7791072B2
(en)
|
2004-11-10 |
2010-09-07 |
Canon Kabushiki Kaisha |
Display
|
|
US7863611B2
(en)
|
2004-11-10 |
2011-01-04 |
Canon Kabushiki Kaisha |
Integrated circuits utilizing amorphous oxides
|
|
CA2585190A1
(en)
|
2004-11-10 |
2006-05-18 |
Canon Kabushiki Kaisha |
Amorphous oxide and field effect transistor
|
|
US7453065B2
(en)
|
2004-11-10 |
2008-11-18 |
Canon Kabushiki Kaisha |
Sensor and image pickup device
|
|
US7256622B2
(en)
|
2004-12-08 |
2007-08-14 |
Naveen Dronavalli |
AND, OR, NAND, and NOR logical gates
|
|
US7579224B2
(en)
|
2005-01-21 |
2009-08-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing a thin film semiconductor device
|
|
TWI472037B
(zh)
|
2005-01-28 |
2015-02-01 |
半導體能源研究所股份有限公司 |
半導體裝置，電子裝置，和半導體裝置的製造方法
|
|
TWI569441B
(zh)
|
2005-01-28 |
2017-02-01 |
半導體能源研究所股份有限公司 |
半導體裝置，電子裝置，和半導體裝置的製造方法
|
|
US7858451B2
(en)
|
2005-02-03 |
2010-12-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Electronic device, semiconductor device and manufacturing method thereof
|
|
US7469318B2
(en)
*
|
2005-02-10 |
2008-12-23 |
International Business Machines Corporation |
System bus structure for large L2 cache array topology with different latency domains
|
|
US7948171B2
(en)
|
2005-02-18 |
2011-05-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Light emitting device
|
|
US20060197092A1
(en)
|
2005-03-03 |
2006-09-07 |
Randy Hoffman |
System and method for forming conductive material on a substrate
|
|
US8681077B2
(en)
|
2005-03-18 |
2014-03-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, and display device, driving method and electronic apparatus thereof
|
|
WO2006105077A2
(en)
|
2005-03-28 |
2006-10-05 |
Massachusetts Institute Of Technology |
Low voltage thin film transistor with high-k dielectric material
|
|
CN101151599B
(zh)
|
2005-03-31 |
2011-08-03 |
株式会社半导体能源研究所 |
算术处理装置和使用算术处理装置的电子设备
|
|
US7645478B2
(en)
|
2005-03-31 |
2010-01-12 |
3M Innovative Properties Company |
Methods of making displays
|
|
US8300031B2
(en)
|
2005-04-20 |
2012-10-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
|
|
JP2006344849A
(ja)
|
2005-06-10 |
2006-12-21 |
Casio Comput Co Ltd |
薄膜トランジスタ
|
|
US7402506B2
(en)
|
2005-06-16 |
2008-07-22 |
Eastman Kodak Company |
Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
|
|
US7691666B2
(en)
|
2005-06-16 |
2010-04-06 |
Eastman Kodak Company |
Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
|
|
US7507618B2
(en)
|
2005-06-27 |
2009-03-24 |
3M Innovative Properties Company |
Method for making electronic devices using metal oxide nanoparticles
|
|
US7809890B2
(en)
*
|
2005-07-06 |
2010-10-05 |
Kabushiki Kaisha Toshiba |
Systems and methods for increasing yield of devices having cache memories by inhibiting use of defective cache entries
|
|
KR100711890B1
(ko)
|
2005-07-28 |
2007-04-25 |
삼성에스디아이 주식회사 |
유기 발광표시장치 및 그의 제조방법
|
|
EP1750276B1
(en)
|
2005-07-29 |
2017-03-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US7323909B2
(en)
|
2005-07-29 |
2008-01-29 |
Sequence Design, Inc. |
Automatic extension of clock gating technique to fine-grained power gating
|
|
JP2007059128A
(ja)
|
2005-08-23 |
2007-03-08 |
Canon Inc |
有機ｅｌ表示装置およびその製造方法
|
|
JP2007073705A
(ja)
|
2005-09-06 |
2007-03-22 |
Canon Inc |
酸化物半導体チャネル薄膜トランジスタおよびその製造方法
|
|
JP4280736B2
(ja)
|
2005-09-06 |
2009-06-17 |
キヤノン株式会社 |
半導体素子
|
|
JP5116225B2
(ja)
|
2005-09-06 |
2013-01-09 |
キヤノン株式会社 |
酸化物半導体デバイスの製造方法
|
|
JP4560502B2
(ja)
|
2005-09-06 |
2010-10-13 |
キヤノン株式会社 |
電界効果型トランジスタ
|
|
JP4850457B2
(ja)
|
2005-09-06 |
2012-01-11 |
キヤノン株式会社 |
薄膜トランジスタ及び薄膜ダイオード
|
|
EP1998374A3
(en)
|
2005-09-29 |
2012-01-18 |
Semiconductor Energy Laboratory Co, Ltd. |
Semiconductor device having oxide semiconductor layer and manufacturing method thereof
|
|
JP5037808B2
(ja)
|
2005-10-20 |
2012-10-03 |
キヤノン株式会社 |
アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
|
|
US7958312B2
(en)
*
|
2005-11-15 |
2011-06-07 |
Oracle America, Inc. |
Small and power-efficient cache that can provide data for background DMA devices while the processor is in a low-power state
|
|
KR101358954B1
(ko)
|
2005-11-15 |
2014-02-06 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
다이오드 및 액티브 매트릭스 표시장치
|
|
TWI292281B
(en)
|
2005-12-29 |
2008-01-01 |
Ind Tech Res Inst |
Pixel structure of active organic light emitting diode and method of fabricating the same
|
|
US7867636B2
(en)
|
2006-01-11 |
2011-01-11 |
Murata Manufacturing Co., Ltd. |
Transparent conductive film and method for manufacturing the same
|
|
US20070161165A1
(en)
|
2006-01-12 |
2007-07-12 |
Toppoly Optoelectronics Corp. |
Systems and methods involving thin film transistors
|
|
JP4977478B2
(ja)
|
2006-01-21 |
2012-07-18 |
三星電子株式会社 |
ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
|
|
US7576394B2
(en)
|
2006-02-02 |
2009-08-18 |
Kochi Industrial Promotion Center |
Thin film transistor including low resistance conductive thin films and manufacturing method thereof
|
|
US7977169B2
(en)
|
2006-02-15 |
2011-07-12 |
Kochi Industrial Promotion Center |
Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
|
|
JP3895760B2
(ja)
*
|
2006-04-03 |
2007-03-22 |
富士通株式会社 |
アドレス変換バッファの電力制御方法及びその装置
|
|
KR20070101595A
(ko)
|
2006-04-11 |
2007-10-17 |
삼성전자주식회사 |
ＺｎＯ ＴＦＴ
|
|
US20070252928A1
(en)
|
2006-04-28 |
2007-11-01 |
Toppan Printing Co., Ltd. |
Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
|
|
US7443202B2
(en)
|
2006-06-02 |
2008-10-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic apparatus having the same
|
|
JP5028033B2
(ja)
|
2006-06-13 |
2012-09-19 |
キヤノン株式会社 |
酸化物半導体膜のドライエッチング方法
|
|
JP4999400B2
(ja)
|
2006-08-09 |
2012-08-15 |
キヤノン株式会社 |
酸化物半導体膜のドライエッチング方法
|
|
JP4609797B2
(ja)
|
2006-08-09 |
2011-01-12 |
Ｎｅｃ液晶テクノロジー株式会社 |
薄膜デバイス及びその製造方法
|
|
JP4332545B2
(ja)
|
2006-09-15 |
2009-09-16 |
キヤノン株式会社 |
電界効果型トランジスタ及びその製造方法
|
|
US7882379B2
(en)
|
2006-09-22 |
2011-02-01 |
Sony Computer Entertainment Inc. |
Power consumption reduction in a multiprocessor system
|
|
JP4274219B2
(ja)
|
2006-09-27 |
2009-06-03 |
セイコーエプソン株式会社 |
電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
|
|
JP5164357B2
(ja)
|
2006-09-27 |
2013-03-21 |
キヤノン株式会社 |
半導体装置及び半導体装置の製造方法
|
|
US7622371B2
(en)
|
2006-10-10 |
2009-11-24 |
Hewlett-Packard Development Company, L.P. |
Fused nanocrystal thin film semiconductor and method
|
|
US7606976B2
(en)
*
|
2006-10-27 |
2009-10-20 |
Advanced Micro Devices, Inc. |
Dynamically scalable cache architecture
|
|
US7772021B2
(en)
|
2006-11-29 |
2010-08-10 |
Samsung Electronics Co., Ltd. |
Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
|
|
JP2008140684A
(ja)
|
2006-12-04 |
2008-06-19 |
Toppan Printing Co Ltd |
カラーｅｌディスプレイおよびその製造方法
|
|
US7576582B2
(en)
|
2006-12-05 |
2009-08-18 |
Electronics And Telecommunications Research Institute |
Low-power clock gating circuit
|
|
KR101303578B1
(ko)
|
2007-01-05 |
2013-09-09 |
삼성전자주식회사 |
박막 식각 방법
|
|
US8207063B2
(en)
|
2007-01-26 |
2012-06-26 |
Eastman Kodak Company |
Process for atomic layer deposition
|
|
KR100851215B1
(ko)
|
2007-03-14 |
2008-08-07 |
삼성에스디아이 주식회사 |
박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
|
|
US7795613B2
(en)
|
2007-04-17 |
2010-09-14 |
Toppan Printing Co., Ltd. |
Structure with transistor
|
|
KR101325053B1
(ko)
|
2007-04-18 |
2013-11-05 |
삼성디스플레이 주식회사 |
박막 트랜지스터 기판 및 이의 제조 방법
|
|
KR20080094300A
(ko)
|
2007-04-19 |
2008-10-23 |
삼성전자주식회사 |
박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
|
|
KR101334181B1
(ko)
|
2007-04-20 |
2013-11-28 |
삼성전자주식회사 |
선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
|
|
WO2008133345A1
(en)
|
2007-04-25 |
2008-11-06 |
Canon Kabushiki Kaisha |
Oxynitride semiconductor
|
|
JP2008276646A
(ja)
|
2007-05-02 |
2008-11-13 |
Hitachi Ltd |
ストレージ装置及びストレージ装置におけるデータの管理方法
|
|
KR101345376B1
(ko)
|
2007-05-29 |
2013-12-24 |
삼성전자주식회사 |
ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
|
|
KR101520284B1
(ko)
|
2007-06-25 |
2015-05-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치
|
|
EP2020658B1
(en)
*
|
2007-06-29 |
2014-06-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device and semiconductor device
|
|
US8202365B2
(en)
|
2007-12-17 |
2012-06-19 |
Fujifilm Corporation |
Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
|
|
JP5140459B2
(ja)
|
2008-02-28 |
2013-02-06 |
ローム株式会社 |
不揮発性記憶ゲートおよびその動作方法、および不揮発性記憶ゲート組込み型論理回路およびその動作方法
|
|
KR100941843B1
(ko)
|
2008-04-14 |
2010-02-11 |
삼성모바일디스플레이주식회사 |
인버터 및 이를 구비한 표시장치
|
|
US8314765B2
(en)
|
2008-06-17 |
2012-11-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Driver circuit, display device, and electronic device
|
|
US8392651B2
(en)
*
|
2008-08-20 |
2013-03-05 |
Mips Technologies, Inc. |
Data cache way prediction
|
|
JP4623179B2
(ja)
|
2008-09-18 |
2011-02-02 |
ソニー株式会社 |
薄膜トランジスタおよびその製造方法
|
|
JP5451280B2
(ja)
|
2008-10-09 |
2014-03-26 |
キヤノン株式会社 |
ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
|
|
JP5781720B2
(ja)
|
2008-12-15 |
2015-09-24 |
ルネサスエレクトロニクス株式会社 |
半導体装置及び半導体装置の製造方法
|
|
US8856448B2
(en)
*
|
2009-02-19 |
2014-10-07 |
Qualcomm Incorporated |
Methods and apparatus for low intrusion snoop invalidation
|
|
US8171220B2
(en)
*
|
2009-04-24 |
2012-05-01 |
International Business Machines Corporation |
Cache architecture with distributed state bits
|
|
JP4945611B2
(ja)
*
|
2009-09-04 |
2012-06-06 |
株式会社東芝 |
マルチプロセッサ
|
|
WO2011034012A1
(en)
|
2009-09-16 |
2011-03-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Logic circuit, light emitting device, semiconductor device, and electronic device
|
|
WO2011036987A1
(en)
|
2009-09-24 |
2011-03-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
WO2011043175A1
(en)
|
2009-10-09 |
2011-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Logic circuit and display device having the same
|
|
EP2489075A4
(en)
|
2009-10-16 |
2014-06-11 |
Semiconductor Energy Lab |
LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE
|
|
KR102577885B1
(ko)
|
2009-10-16 |
2023-09-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR102748818B1
(ko)
|
2009-10-29 |
2024-12-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR101930682B1
(ko)
|
2009-10-29 |
2018-12-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR101629194B1
(ko)
|
2009-10-30 |
2016-06-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
논리 회로 및 반도체 장치
|
|
KR101861980B1
(ko)
|
2009-11-06 |
2018-05-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR101928723B1
(ko)
|
2009-11-20 |
2018-12-13 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
CN104332177B
(zh)
|
2009-11-20 |
2018-05-08 |
株式会社半导体能源研究所 |
非易失性锁存电路和逻辑电路，以及使用其的半导体器件
|
|
WO2011065258A1
(en)
|
2009-11-27 |
2011-06-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR101720072B1
(ko)
|
2009-12-11 |
2017-03-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
|
|
CN102668377B
(zh)
|
2009-12-18 |
2015-04-08 |
株式会社半导体能源研究所 |
非易失性锁存电路和逻辑电路以及使用它们的半导体器件
|
|
KR101473684B1
(ko)
|
2009-12-25 |
2014-12-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR102356530B1
(ko)
|
2009-12-28 |
2022-02-08 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
기억 장치와 반도체 장치
|
|
US9110808B2
(en)
*
|
2009-12-30 |
2015-08-18 |
International Business Machines Corporation |
Formation of an exclusive ownership coherence state in a lower level cache upon replacement from an upper level cache of a cache line in a private shared owner state
|
|
EP2526619B1
(en)
|
2010-01-20 |
2016-03-23 |
Semiconductor Energy Laboratory Co. Ltd. |
Signal processing circuit and method for driving the same
|
|
WO2011114866A1
(en)
*
|
2010-03-17 |
2011-09-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and semiconductor device
|
|
KR101872188B1
(ko)
|
2010-05-21 |
2018-06-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 표시 장치
|
|
WO2011145468A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and semiconductor device
|
|
WO2011145707A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device
|
|
JP5714973B2
(ja)
|
2010-05-21 |
2015-05-07 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US8928466B2
(en)
*
|
2010-08-04 |
2015-01-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR101979758B1
(ko)
|
2010-08-27 |
2019-05-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
기억 장치, 반도체 장치
|
|
WO2012029638A1
(en)
|
2010-09-03 |
2012-03-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6030298B2
(ja)
*
|
2010-12-28 |
2016-11-24 |
株式会社半導体エネルギー研究所 |
緩衝記憶装置及び信号処理回路
|
|
TWI536502B
(zh)
*
|
2011-05-13 |
2016-06-01 |
半導體能源研究所股份有限公司 |
記憶體電路及電子裝置
|
|
KR101933741B1
(ko)
|
2011-06-09 |
2018-12-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
캐시 메모리 및 캐시 메모리의 구동 방법
|
|
US9753858B2
(en)
*
|
2011-11-30 |
2017-09-05 |
Advanced Micro Devices, Inc. |
DRAM cache with tags and data jointly stored in physical rows
|
|
JP6190150B2
(ja)
*
|
2012-05-02 |
2017-08-30 |
株式会社半導体エネルギー研究所 |
記憶装置
|