JP2014002835A5 - - Google Patents

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Publication number
JP2014002835A5
JP2014002835A5 JP2012135297A JP2012135297A JP2014002835A5 JP 2014002835 A5 JP2014002835 A5 JP 2014002835A5 JP 2012135297 A JP2012135297 A JP 2012135297A JP 2012135297 A JP2012135297 A JP 2012135297A JP 2014002835 A5 JP2014002835 A5 JP 2014002835A5
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JP
Japan
Prior art keywords
sample
voltage
primary electron
electron beam
voltage applied
Prior art date
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Application number
JP2012135297A
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English (en)
Japanese (ja)
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JP5851352B2 (ja
JP2014002835A (ja
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Publication date
Application filed filed Critical
Priority to JP2012135297A priority Critical patent/JP5851352B2/ja
Priority claimed from JP2012135297A external-priority patent/JP5851352B2/ja
Priority to US14/407,117 priority patent/US9324540B2/en
Priority to PCT/JP2013/061010 priority patent/WO2013187115A1/ja
Priority to KR1020147030888A priority patent/KR101685274B1/ko
Publication of JP2014002835A publication Critical patent/JP2014002835A/ja
Publication of JP2014002835A5 publication Critical patent/JP2014002835A5/ja
Application granted granted Critical
Publication of JP5851352B2 publication Critical patent/JP5851352B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012135297A 2012-06-15 2012-06-15 荷電粒子線装置 Active JP5851352B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012135297A JP5851352B2 (ja) 2012-06-15 2012-06-15 荷電粒子線装置
US14/407,117 US9324540B2 (en) 2012-06-15 2013-04-12 Charged particle beam device
PCT/JP2013/061010 WO2013187115A1 (ja) 2012-06-15 2013-04-12 荷電粒子線装置
KR1020147030888A KR101685274B1 (ko) 2012-06-15 2013-04-12 하전 입자선 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012135297A JP5851352B2 (ja) 2012-06-15 2012-06-15 荷電粒子線装置

Publications (3)

Publication Number Publication Date
JP2014002835A JP2014002835A (ja) 2014-01-09
JP2014002835A5 true JP2014002835A5 (enExample) 2015-03-19
JP5851352B2 JP5851352B2 (ja) 2016-02-03

Family

ID=49757953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012135297A Active JP5851352B2 (ja) 2012-06-15 2012-06-15 荷電粒子線装置

Country Status (4)

Country Link
US (1) US9324540B2 (enExample)
JP (1) JP5851352B2 (enExample)
KR (1) KR101685274B1 (enExample)
WO (1) WO2013187115A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9564291B1 (en) * 2014-01-27 2017-02-07 Mochii, Inc. Hybrid charged-particle beam and light beam microscopy
US9881764B2 (en) * 2016-01-09 2018-01-30 Kla-Tencor Corporation Heat-spreading blanking system for high throughput electron beam apparatus
WO2018096610A1 (ja) * 2016-11-24 2018-05-31 株式会社日立ハイテクノロジーズ 荷電粒子線装置
WO2018131102A1 (ja) * 2017-01-12 2018-07-19 株式会社 日立ハイテクノロジーズ 荷電粒子線装置
CN106920723A (zh) * 2017-03-06 2017-07-04 聚束科技(北京)有限公司 一种扫描聚焦系统及电子束控制方法
WO2019038883A1 (ja) * 2017-08-24 2019-02-28 株式会社日立ハイテクノロジーズ 荷電粒子線装置およびそれを用いた観察方法、元素分析方法
US11342155B2 (en) * 2018-05-22 2022-05-24 Hitachi High-Tech Corporation Charged particle beam device and method for adjusting position of detector of charged particle beam device
WO2019224895A1 (ja) * 2018-05-22 2019-11-28 株式会社日立ハイテクノロジーズ 荷電粒子線装置及びその軸調整方法
US11355304B2 (en) 2018-06-14 2022-06-07 Hitachi High-Tech Corporation Electronic microscope device
WO2020095531A1 (ja) * 2018-11-08 2020-05-14 株式会社日立ハイテク 荷電粒子線装置の調整方法及び荷電粒子線装置システム
JP7161053B2 (ja) * 2019-07-02 2022-10-25 株式会社日立ハイテク 荷電粒子線装置
US12437965B1 (en) * 2022-08-01 2025-10-07 Mochil, Inc. Charged-particle beam microscope with differential vacuum pressures

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04302316A (ja) 1991-03-29 1992-10-26 Omron Corp メモリ管理装置
US6667476B2 (en) 1998-03-09 2003-12-23 Hitachi, Ltd. Scanning electron microscope
JP4093662B2 (ja) * 1999-01-04 2008-06-04 株式会社日立製作所 走査形電子顕微鏡
JP3494208B2 (ja) * 1999-03-19 2004-02-09 株式会社日立製作所 走査電子顕微鏡
US6998611B2 (en) 2001-09-06 2006-02-14 Ebara Corporation Electron beam apparatus and device manufacturing method using same
JP2003151484A (ja) 2001-11-15 2003-05-23 Jeol Ltd 走査型荷電粒子ビーム装置
JP4469727B2 (ja) 2002-12-27 2010-05-26 株式会社アドバンテスト 試料観察装置、及び試料観察方法
JP2006216396A (ja) * 2005-02-04 2006-08-17 Hitachi High-Technologies Corp 荷電粒子線装置
JP4616180B2 (ja) 2006-01-20 2011-01-19 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP2006294627A (ja) 2006-04-27 2006-10-26 Ebara Corp 電子線装置及び該装置を用いたデバイス製造方法
JP5075431B2 (ja) * 2007-02-28 2012-11-21 株式会社日立ハイテクノロジーズ 帯電測定方法、焦点調整方法、及び走査電子顕微鏡
US7888640B2 (en) * 2007-06-18 2011-02-15 Hitachi High-Technologies Corporation Scanning electron microscope and method of imaging an object by using the scanning electron microscope
JP5227643B2 (ja) * 2008-04-14 2013-07-03 株式会社日立ハイテクノロジーズ 高分解能でかつ高コントラストな観察が可能な電子線応用装置
WO2011007517A1 (ja) * 2009-07-15 2011-01-20 株式会社 日立ハイテクノロジーズ 試料電位測定方法、及び荷電粒子線装置

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