JP2017199606A5 - - Google Patents

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Publication number
JP2017199606A5
JP2017199606A5 JP2016090682A JP2016090682A JP2017199606A5 JP 2017199606 A5 JP2017199606 A5 JP 2017199606A5 JP 2016090682 A JP2016090682 A JP 2016090682A JP 2016090682 A JP2016090682 A JP 2016090682A JP 2017199606 A5 JP2017199606 A5 JP 2017199606A5
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JP
Japan
Prior art keywords
charged particle
particle beam
beam apparatus
detectors
sample
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Application number
JP2016090682A
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English (en)
Japanese (ja)
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JP2017199606A (ja
JP6727024B2 (ja
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Priority to JP2016090682A priority Critical patent/JP6727024B2/ja
Priority claimed from JP2016090682A external-priority patent/JP6727024B2/ja
Priority to US15/487,561 priority patent/US10121632B2/en
Publication of JP2017199606A publication Critical patent/JP2017199606A/ja
Publication of JP2017199606A5 publication Critical patent/JP2017199606A5/ja
Application granted granted Critical
Publication of JP6727024B2 publication Critical patent/JP6727024B2/ja
Active legal-status Critical Current
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JP2016090682A 2016-04-28 2016-04-28 荷電粒子線装置 Active JP6727024B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016090682A JP6727024B2 (ja) 2016-04-28 2016-04-28 荷電粒子線装置
US15/487,561 US10121632B2 (en) 2016-04-28 2017-04-14 Charged particle beam apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016090682A JP6727024B2 (ja) 2016-04-28 2016-04-28 荷電粒子線装置

Publications (3)

Publication Number Publication Date
JP2017199606A JP2017199606A (ja) 2017-11-02
JP2017199606A5 true JP2017199606A5 (enExample) 2019-02-07
JP6727024B2 JP6727024B2 (ja) 2020-07-22

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ID=60156937

Family Applications (1)

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JP2016090682A Active JP6727024B2 (ja) 2016-04-28 2016-04-28 荷電粒子線装置

Country Status (2)

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US (1) US10121632B2 (enExample)
JP (1) JP6727024B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112016006875B4 (de) * 2016-06-17 2022-05-12 Hitachi High-Tech Corporation Ladungsteilchenstrahlvorrichtung sowie verfahren zum betrachten einer probe
WO2019100600A1 (en) * 2017-11-21 2019-05-31 Focus-Ebeam Technology (Beijing) Co., Ltd. Low voltage scanning electron microscope and method for specimen observation
DE112018007343B4 (de) 2018-04-26 2023-11-23 Hitachi High-Tech Corporation Mit einem strahl geladener teilchen arbeitende vorrichtung
US11481964B2 (en) * 2018-04-27 2022-10-25 Hewlett-Packard Development Company, L.P. Three dimensional volume imaging
JP7105321B2 (ja) * 2018-12-25 2022-07-22 株式会社日立ハイテク 荷電粒子線装置
JP7197698B2 (ja) * 2019-07-02 2022-12-27 株式会社日立ハイテク 荷電粒子線装置
IL295719A (en) * 2020-03-11 2022-10-01 Asml Netherlands Bv Systems and methods for signal electron detection
JP7364540B2 (ja) * 2020-08-05 2023-10-18 株式会社日立ハイテク 画像処理システム
CN114220725B (zh) 2020-12-02 2024-05-07 聚束科技（北京）有限公司 一种电子显微镜
CN114256043B (zh) 2020-12-02 2024-04-05 聚束科技（北京）有限公司 一种电子束系统
US12339241B2 (en) * 2021-05-11 2025-06-24 Nuflare Technology, Inc. Multiple secondary electron beam alignment method, multiple secondary electron beam alignment apparatus, and electron beam inspection apparatus
JP7307768B2 (ja) * 2021-07-08 2023-07-12 日本電子株式会社 走査電子顕微鏡および対物レンズ
US20250087442A1 (en) * 2023-09-07 2025-03-13 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Electron beam apparatus, foil or grid lens, and method of operating an electron beam apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644132A (en) 1994-06-20 1997-07-01 Opan Technologies Ltd. System for high resolution imaging and measurement of topographic and material features on a specimen
DE69504294T2 (de) 1994-12-19 1999-04-08 Opal Technologies Ltd., Nes Ziona System zur Hochauflösungsbildgebung und Messung von topographischen Characteristiken und Materialcharakteristiken einer Probe
JP2001110351A (ja) * 1999-10-05 2001-04-20 Hitachi Ltd 走査電子顕微鏡
JP2001124713A (ja) * 1999-10-27 2001-05-11 Hitachi Ltd 回路パターン検査装置、および回路パターン検査方法
JP5033310B2 (ja) * 2005-02-18 2012-09-26 株式会社日立ハイテクノロジーズ 検査装置
US7947953B2 (en) * 2008-10-08 2011-05-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle detection apparatus and detection method
JP4913854B2 (ja) * 2008-10-08 2012-04-11 アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー 荷電粒子検出装置及び検出方法
WO2011089955A1 (ja) * 2010-01-20 2011-07-28 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5530980B2 (ja) 2011-06-14 2014-06-25 株式会社アドバンテスト パターン測定装置及びパターン測定方法
KR101724221B1 (ko) * 2013-02-26 2017-04-06 가부시키가이샤 히다치 하이테크놀로지즈 하전 입자 선 장치
US20160336143A1 (en) * 2015-05-15 2016-11-17 Kabushiki Kaisha Toshiba Charged particle beam apparatus and method of calibrating sample position

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