JP2011181894A5 - - Google Patents

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Publication number
JP2011181894A5
JP2011181894A5 JP2010269780A JP2010269780A JP2011181894A5 JP 2011181894 A5 JP2011181894 A5 JP 2011181894A5 JP 2010269780 A JP2010269780 A JP 2010269780A JP 2010269780 A JP2010269780 A JP 2010269780A JP 2011181894 A5 JP2011181894 A5 JP 2011181894A5
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JP
Japan
Prior art keywords
euv mask
ion beam
correction
hydrogen
defect
Prior art date
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Application number
JP2010269780A
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English (en)
Japanese (ja)
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JP5662123B2 (ja
JP2011181894A (ja
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Priority to JP2010269780A priority Critical patent/JP5662123B2/ja
Priority claimed from JP2010269780A external-priority patent/JP5662123B2/ja
Priority to DE102011008924.1A priority patent/DE102011008924B4/de
Priority to US12/931,412 priority patent/US8460842B2/en
Publication of JP2011181894A publication Critical patent/JP2011181894A/ja
Publication of JP2011181894A5 publication Critical patent/JP2011181894A5/ja
Application granted granted Critical
Publication of JP5662123B2 publication Critical patent/JP5662123B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010269780A 2010-02-02 2010-12-02 Ｅｕｖマスク修正装置および方法 Expired - Fee Related JP5662123B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010269780A JP5662123B2 (ja) 2010-02-02 2010-12-02 Ｅｕｖマスク修正装置および方法
DE102011008924.1A DE102011008924B4 (de) 2010-02-02 2011-01-19 Defekt-Reparaturvorrichtung und -verfahren für EUV-Maske
US12/931,412 US8460842B2 (en) 2010-02-02 2011-01-28 Defect repair apparatus and method for EUV mask using a hydrogen ion beam

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010021540 2010-02-02
JP2010021540 2010-02-02
JP2010269780A JP5662123B2 (ja) 2010-02-02 2010-12-02 Ｅｕｖマスク修正装置および方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014246043A Division JP5941522B2 (ja) 2010-02-02 2014-12-04 イオンビーム装置

Publications (3)

Publication Number Publication Date
JP2011181894A JP2011181894A (ja) 2011-09-15
JP2011181894A5 true JP2011181894A5 (enExample) 2013-12-05
JP5662123B2 JP5662123B2 (ja) 2015-01-28

Family

ID=44316277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010269780A Expired - Fee Related JP5662123B2 (ja) 2010-02-02 2010-12-02 Ｅｕｖマスク修正装置および方法

Country Status (3)

Country Link
US (1) US8460842B2 (enExample)
JP (1) JP5662123B2 (enExample)
DE (1) DE102011008924B4 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9249501B2 (en) * 2011-05-18 2016-02-02 Carl Zeiss Smt Gmbh Surface correction on coated mirrors
US20140102881A1 (en) * 2012-10-12 2014-04-17 Cymer Inc. Method of and apparatus for in-situ repair of reflective optic
JP6490917B2 (ja) * 2013-08-23 2019-03-27 株式会社日立ハイテクサイエンス 修正装置
JP6328023B2 (ja) * 2014-10-08 2018-05-23 株式会社日立ハイテクノロジーズ イオンビーム装置
JP6501891B2 (ja) 2015-08-20 2019-04-17 株式会社日立ハイテクノロジーズ イオンビーム装置およびガス電界電離イオン源の洗浄方法
US9791771B2 (en) * 2016-02-11 2017-10-17 Globalfoundries Inc. Photomask structure with an etch stop layer that enables repairs of detected defects therein and extreme ultraviolet(EUV) photolithograpy methods using the photomask structure
DE102018207882A1 (de) * 2018-05-18 2019-11-21 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Analyse eines Elements eines Photolithographieprozesses mit Hilfe eines Transformationsmodells
JP7479810B2 (ja) * 2019-09-24 2024-05-09 株式会社日立ハイテクサイエンス 液体金属イオン源及び集束イオンビーム装置
TW202522117A (zh) * 2019-09-26 2025-06-01 日商Ｈｏｙａ股份有限公司 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法
DE102020210175B4 (de) * 2020-08-11 2022-03-03 Carl Zeiss Smt Gmbh Verfahren, vorrichtung und computerprogramm zur analyse und/oder bearbeitung einer maske für die lithographie
DE102021203075A1 (de) * 2021-03-26 2022-09-29 Carl Zeiss Smt Gmbh Verfahren, vorrichtung und computerprogramm zur reparatur eines maskendefekts
CN119077278B (zh) * 2024-11-01 2025-02-21 河南科技学院 一种智能射流电沉积自动修复设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2765065B2 (ja) * 1989-06-30 1998-06-11 ソニー株式会社 クロム系膜のパターン形成方法
JPH1021841A (ja) * 1996-06-27 1998-01-23 Nissin Electric Co Ltd イオンビーム立上げ方法
JP3974319B2 (ja) * 2000-03-30 2007-09-12 株式会社東芝 エッチング方法
JP2002319362A (ja) * 2001-04-20 2002-10-31 Hitachi Ltd 走査電子顕微鏡用９０°変換試料台
JP2004039453A (ja) * 2002-07-03 2004-02-05 Seiko Instruments Inc 微細ステンシル構造修正装置
SG115621A1 (en) * 2003-02-24 2005-10-28 Asml Netherlands Bv Method and device for measuring contamination of a surface of a component of a lithographic apparatus
JP2005260057A (ja) * 2004-03-12 2005-09-22 Sii Nanotechnology Inc Ｅｕｖリソグラフィ用マスクの黒欠陥修正方法
JP4926383B2 (ja) * 2004-05-17 2012-05-09 大日本印刷株式会社 フォトマスクの欠陥修正方法
JP2007103108A (ja) * 2005-10-03 2007-04-19 Sii Nanotechnology Inc 集束イオンビームによる加工方法
KR100873154B1 (ko) * 2008-01-30 2008-12-10 한국표준과학연구원 포토 마스크의 수리장치 및 이를 이용한 수리방법
JP2009188047A (ja) * 2008-02-04 2009-08-20 Sii Nanotechnology Inc Ｅｕｖｌマスクの黒欠陥修正方法
JP5373298B2 (ja) * 2008-03-04 2013-12-18 株式会社日立ハイテクサイエンス Ｅｕｖｌマスクの加工方法
WO2009147894A1 (ja) * 2008-06-05 2009-12-10 株式会社日立ハイテクノロジーズ イオンビーム装置
DE102009045008A1 (de) * 2008-10-15 2010-04-29 Carl Zeiss Smt Ag EUV-Lithographievorrichtung und Verfahren zum Bearbeiten einer Maske

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