JP5662123B2 - Ｅｕｖマスク修正装置および方法 - Google Patents

Ｅｕｖマスク修正装置および方法 Download PDF

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Publication number
JP5662123B2
JP5662123B2 JP2010269780A JP2010269780A JP5662123B2 JP 5662123 B2 JP5662123 B2 JP 5662123B2 JP 2010269780 A JP2010269780 A JP 2010269780A JP 2010269780 A JP2010269780 A JP 2010269780A JP 5662123 B2 JP5662123 B2 JP 5662123B2
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JP
Japan
Prior art keywords
euv mask
ion beam
hydrogen
ion
defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2010269780A
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English (en)
Japanese (ja)
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JP2011181894A5 (enExample
JP2011181894A (ja
Inventor
小川　貴志
貴志 小川
弘 大庭
弘 大庭
文朗 荒巻
文朗 荒巻
行人 八坂
行人 八坂
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Hitachi High Tech Science Corp
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Hitachi High Tech Science Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Science Corp filed Critical Hitachi High Tech Science Corp
Priority to JP2010269780A priority Critical patent/JP5662123B2/ja
Priority to DE102011008924.1A priority patent/DE102011008924B4/de
Priority to US12/931,412 priority patent/US8460842B2/en
Publication of JP2011181894A publication Critical patent/JP2011181894A/ja
Publication of JP2011181894A5 publication Critical patent/JP2011181894A5/ja
Application granted granted Critical
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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G03F1/86—Inspecting by charged particle beam [CPB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2010269780A 2010-02-02 2010-12-02 Ｅｕｖマスク修正装置および方法 Expired - Fee Related JP5662123B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010269780A JP5662123B2 (ja) 2010-02-02 2010-12-02 Ｅｕｖマスク修正装置および方法
DE102011008924.1A DE102011008924B4 (de) 2010-02-02 2011-01-19 Defekt-Reparaturvorrichtung und -verfahren für EUV-Maske
US12/931,412 US8460842B2 (en) 2010-02-02 2011-01-28 Defect repair apparatus and method for EUV mask using a hydrogen ion beam

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010021540 2010-02-02
JP2010021540 2010-02-02
JP2010269780A JP5662123B2 (ja) 2010-02-02 2010-12-02 Ｅｕｖマスク修正装置および方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014246043A Division JP5941522B2 (ja) 2010-02-02 2014-12-04 イオンビーム装置

Publications (3)

Publication Number Publication Date
JP2011181894A JP2011181894A (ja) 2011-09-15
JP2011181894A5 JP2011181894A5 (enExample) 2013-12-05
JP5662123B2 true JP5662123B2 (ja) 2015-01-28

Family

ID=44316277

Family Applications (1)

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JP2010269780A Expired - Fee Related JP5662123B2 (ja) 2010-02-02 2010-12-02 Ｅｕｖマスク修正装置および方法

Country Status (3)

Country Link
US (1) US8460842B2 (enExample)
JP (1) JP5662123B2 (enExample)
DE (1) DE102011008924B4 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9249501B2 (en) * 2011-05-18 2016-02-02 Carl Zeiss Smt Gmbh Surface correction on coated mirrors
US20140102881A1 (en) * 2012-10-12 2014-04-17 Cymer Inc. Method of and apparatus for in-situ repair of reflective optic
JP6490917B2 (ja) * 2013-08-23 2019-03-27 株式会社日立ハイテクサイエンス 修正装置
JP6328023B2 (ja) * 2014-10-08 2018-05-23 株式会社日立ハイテクノロジーズ イオンビーム装置
JP6501891B2 (ja) 2015-08-20 2019-04-17 株式会社日立ハイテクノロジーズ イオンビーム装置およびガス電界電離イオン源の洗浄方法
US9791771B2 (en) * 2016-02-11 2017-10-17 Globalfoundries Inc. Photomask structure with an etch stop layer that enables repairs of detected defects therein and extreme ultraviolet(EUV) photolithograpy methods using the photomask structure
DE102018207882A1 (de) * 2018-05-18 2019-11-21 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Analyse eines Elements eines Photolithographieprozesses mit Hilfe eines Transformationsmodells
JP7479810B2 (ja) * 2019-09-24 2024-05-09 株式会社日立ハイテクサイエンス 液体金属イオン源及び集束イオンビーム装置
TW202522117A (zh) * 2019-09-26 2025-06-01 日商Ｈｏｙａ股份有限公司 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法
DE102020210175B4 (de) * 2020-08-11 2022-03-03 Carl Zeiss Smt Gmbh Verfahren, vorrichtung und computerprogramm zur analyse und/oder bearbeitung einer maske für die lithographie
DE102021203075A1 (de) * 2021-03-26 2022-09-29 Carl Zeiss Smt Gmbh Verfahren, vorrichtung und computerprogramm zur reparatur eines maskendefekts
CN119077278B (zh) * 2024-11-01 2025-02-21 河南科技学院 一种智能射流电沉积自动修复设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2765065B2 (ja) * 1989-06-30 1998-06-11 ソニー株式会社 クロム系膜のパターン形成方法
JPH1021841A (ja) * 1996-06-27 1998-01-23 Nissin Electric Co Ltd イオンビーム立上げ方法
JP3974319B2 (ja) * 2000-03-30 2007-09-12 株式会社東芝 エッチング方法
JP2002319362A (ja) * 2001-04-20 2002-10-31 Hitachi Ltd 走査電子顕微鏡用９０°変換試料台
JP2004039453A (ja) * 2002-07-03 2004-02-05 Seiko Instruments Inc 微細ステンシル構造修正装置
SG115621A1 (en) * 2003-02-24 2005-10-28 Asml Netherlands Bv Method and device for measuring contamination of a surface of a component of a lithographic apparatus
JP2005260057A (ja) * 2004-03-12 2005-09-22 Sii Nanotechnology Inc Ｅｕｖリソグラフィ用マスクの黒欠陥修正方法
JP4926383B2 (ja) * 2004-05-17 2012-05-09 大日本印刷株式会社 フォトマスクの欠陥修正方法
JP2007103108A (ja) * 2005-10-03 2007-04-19 Sii Nanotechnology Inc 集束イオンビームによる加工方法
KR100873154B1 (ko) * 2008-01-30 2008-12-10 한국표준과학연구원 포토 마스크의 수리장치 및 이를 이용한 수리방법
JP2009188047A (ja) * 2008-02-04 2009-08-20 Sii Nanotechnology Inc Ｅｕｖｌマスクの黒欠陥修正方法
JP5373298B2 (ja) * 2008-03-04 2013-12-18 株式会社日立ハイテクサイエンス Ｅｕｖｌマスクの加工方法
WO2009147894A1 (ja) * 2008-06-05 2009-12-10 株式会社日立ハイテクノロジーズ イオンビーム装置
DE102009045008A1 (de) * 2008-10-15 2010-04-29 Carl Zeiss Smt Ag EUV-Lithographievorrichtung und Verfahren zum Bearbeiten einer Maske

Also Published As

Publication number Publication date
US8460842B2 (en) 2013-06-11
DE102011008924B4 (de) 2020-10-22
US20110189593A1 (en) 2011-08-04
JP2011181894A (ja) 2011-09-15
DE102011008924A1 (de) 2011-08-04

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