JP5662123B2 - Ｅｕｖマスク修正装置および方法 - Google Patents

Ｅｕｖマスク修正装置および方法 Download PDF

Info

Publication number
JP5662123B2
JP5662123B2 JP2010269780A JP2010269780A JP5662123B2 JP 5662123 B2 JP5662123 B2 JP 5662123B2 JP 2010269780 A JP2010269780 A JP 2010269780A JP 2010269780 A JP2010269780 A JP 2010269780A JP 5662123 B2 JP5662123 B2 JP 5662123B2
Authority
JP
Japan
Prior art keywords
euv mask
ion beam
hydrogen
ion
defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010269780A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011181894A5 (enExample
JP2011181894A (ja
Inventor
小川　貴志
貴志 小川
弘 大庭
弘 大庭
文朗 荒巻
文朗 荒巻
行人 八坂
行人 八坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High-Tech Analysis Corp
Original Assignee
Hitachi High Tech Science Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Science Corp filed Critical Hitachi High Tech Science Corp
Priority to JP2010269780A priority Critical patent/JP5662123B2/ja
Priority to DE102011008924.1A priority patent/DE102011008924B4/de
Priority to US12/931,412 priority patent/US8460842B2/en
Publication of JP2011181894A publication Critical patent/JP2011181894A/ja
Publication of JP2011181894A5 publication Critical patent/JP2011181894A5/ja
Application granted granted Critical
Publication of JP5662123B2 publication Critical patent/JP5662123B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G03F1/86—Inspecting by charged particle beam [CPB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2010269780A 2010-02-02 2010-12-02 Ｅｕｖマスク修正装置および方法 Expired - Fee Related JP5662123B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010269780A JP5662123B2 (ja) 2010-02-02 2010-12-02 Ｅｕｖマスク修正装置および方法
DE102011008924.1A DE102011008924B4 (de) 2010-02-02 2011-01-19 Defekt-Reparaturvorrichtung und -verfahren für EUV-Maske
US12/931,412 US8460842B2 (en) 2010-02-02 2011-01-28 Defect repair apparatus and method for EUV mask using a hydrogen ion beam

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010021540 2010-02-02
JP2010021540 2010-02-02
JP2010269780A JP5662123B2 (ja) 2010-02-02 2010-12-02 Ｅｕｖマスク修正装置および方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014246043A Division JP5941522B2 (ja) 2010-02-02 2014-12-04 イオンビーム装置

Publications (3)

Publication Number Publication Date
JP2011181894A JP2011181894A (ja) 2011-09-15
JP2011181894A5 JP2011181894A5 (enExample) 2013-12-05
JP5662123B2 true JP5662123B2 (ja) 2015-01-28

Family

ID=44316277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010269780A Expired - Fee Related JP5662123B2 (ja) 2010-02-02 2010-12-02 Ｅｕｖマスク修正装置および方法

Country Status (3)

Country Link
US (1) US8460842B2 (enExample)
JP (1) JP5662123B2 (enExample)
DE (1) DE102011008924B4 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9249501B2 (en) * 2011-05-18 2016-02-02 Carl Zeiss Smt Gmbh Surface correction on coated mirrors
US20140102881A1 (en) 2012-10-12 2014-04-17 Cymer Inc. Method of and apparatus for in-situ repair of reflective optic
JP6490917B2 (ja) * 2013-08-23 2019-03-27 株式会社日立ハイテクサイエンス 修正装置
JP6328023B2 (ja) * 2014-10-08 2018-05-23 株式会社日立ハイテクノロジーズ イオンビーム装置
WO2017029742A1 (ja) 2015-08-20 2017-02-23 株式会社日立ハイテクノロジーズ イオンビーム装置およびガス電界電離イオン源の洗浄方法
US9791771B2 (en) * 2016-02-11 2017-10-17 Globalfoundries Inc. Photomask structure with an etch stop layer that enables repairs of detected defects therein and extreme ultraviolet(EUV) photolithograpy methods using the photomask structure
DE102018207882A1 (de) * 2018-05-18 2019-11-21 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Analyse eines Elements eines Photolithographieprozesses mit Hilfe eines Transformationsmodells
JP7479810B2 (ja) * 2019-09-24 2024-05-09 株式会社日立ハイテクサイエンス 液体金属イオン源及び集束イオンビーム装置
US12346017B2 (en) * 2019-09-26 2025-07-01 Hoya Corporation Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device
DE102020210175B4 (de) * 2020-08-11 2022-03-03 Carl Zeiss Smt Gmbh Verfahren, vorrichtung und computerprogramm zur analyse und/oder bearbeitung einer maske für die lithographie
DE102021203075B4 (de) * 2021-03-26 2026-07-09 Carl Zeiss Smt Gmbh Verfahren, Vorrichtung und Computerprogramm zur Reparatur eines Maskendefekts
DE102022118874B3 (de) * 2022-07-27 2023-11-23 Carl Zeiss Smt Gmbh Verfahren zum Elektronenstrahl-induzierten Bearbeiten eines Defekts einer Photomaske für die Mikrolithographie
CN119077278B (zh) * 2024-11-01 2025-02-21 河南科技学院 一种智能射流电沉积自动修复设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2765065B2 (ja) * 1989-06-30 1998-06-11 ソニー株式会社 クロム系膜のパターン形成方法
JPH1021841A (ja) * 1996-06-27 1998-01-23 Nissin Electric Co Ltd イオンビーム立上げ方法
JP3974319B2 (ja) * 2000-03-30 2007-09-12 株式会社東芝 エッチング方法
JP2002319362A (ja) * 2001-04-20 2002-10-31 Hitachi Ltd 走査電子顕微鏡用９０°変換試料台
JP2004039453A (ja) * 2002-07-03 2004-02-05 Seiko Instruments Inc 微細ステンシル構造修正装置
SG115621A1 (en) * 2003-02-24 2005-10-28 Asml Netherlands Bv Method and device for measuring contamination of a surface of a component of a lithographic apparatus
JP2005260057A (ja) * 2004-03-12 2005-09-22 Sii Nanotechnology Inc Ｅｕｖリソグラフィ用マスクの黒欠陥修正方法
JP4926383B2 (ja) * 2004-05-17 2012-05-09 大日本印刷株式会社 フォトマスクの欠陥修正方法
JP2007103108A (ja) * 2005-10-03 2007-04-19 Sii Nanotechnology Inc 集束イオンビームによる加工方法
KR100873154B1 (ko) * 2008-01-30 2008-12-10 한국표준과학연구원 포토 마스크의 수리장치 및 이를 이용한 수리방법
JP2009188047A (ja) * 2008-02-04 2009-08-20 Sii Nanotechnology Inc Ｅｕｖｌマスクの黒欠陥修正方法
JP5373298B2 (ja) * 2008-03-04 2013-12-18 株式会社日立ハイテクサイエンス Ｅｕｖｌマスクの加工方法
US8779380B2 (en) * 2008-06-05 2014-07-15 Hitachi High-Technologies Corporation Ion beam device
DE102009045008A1 (de) * 2008-10-15 2010-04-29 Carl Zeiss Smt Ag EUV-Lithographievorrichtung und Verfahren zum Bearbeiten einer Maske

Also Published As

Publication number Publication date
DE102011008924A1 (de) 2011-08-04
DE102011008924B4 (de) 2020-10-22
US8460842B2 (en) 2013-06-11
JP2011181894A (ja) 2011-09-15
US20110189593A1 (en) 2011-08-04

Similar Documents

Publication Publication Date Title
JP2011181894A (ja) Ｅｕｖマスク修正装置および方法
JP6490917B2 (ja) 修正装置
JP6266458B2 (ja) イリジウムティップ、ガス電界電離イオン源、集束イオンビーム装置、電子源、電子顕微鏡、電子ビーム応用分析装置、イオン電子複合ビーム装置、走査プローブ顕微鏡、およびマスク修正装置
EP1710327A2 (en) Method of selective etching by using a focused ion beam, an electron beam or a laser beam
US8013300B2 (en) Sample decontamination
US8822945B2 (en) Focused ion beam apparatus
US9336979B2 (en) Focused ion beam apparatus with precious metal emitter surface
JP2011181894A5 (enExample)
TW202036151A (zh) 遮罩修正裝置及遮罩修正方法
JP2009301920A (ja) ナノチップエミッタ作製方法
JP5989959B2 (ja) 集束イオンビーム装置
JP5941522B2 (ja) イオンビーム装置
JP2011171009A (ja) 集束イオンビーム装置
US10658143B2 (en) Method of manufacturing emitter
US8314403B2 (en) Gas field ion source with coated tip
JP2007149449A (ja) 帯電汚染防止装置および帯電汚染防止方法
JP5432028B2 (ja) 集束イオンビーム装置、チップ先端構造検査方法及びチップ先端構造再生方法
JP5592136B2 (ja) チップ先端構造検査方法
JP2011233509A (ja) 電界電離型イオン源のエミッター、集束イオンビーム装置及び集束イオンビーム照射方法
JP2006080029A (ja) 微小イオンビーム発生方法及び装置

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20121122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131022

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131022

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140514

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140603

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140804

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141104

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141204

R150 Certificate of patent or registration of utility model

Ref document number: 5662123

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees